HAL251低电压功耗霍尔传感器-USB迷|专注于互联网分享

2024年2月23日发(作者：果芷荷)

HAL251HAL251 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity

micro-power switch. Superior high-temperature performance is made possible through a dynamic

offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage

normally caused by device over molding, temperature dependencies, and thermal stress.

HAL251 is special made for low operation voltage, 1.65V, to active the chip which is includes

the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal

amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer

fabrication processing is used to take advantage of low-voltage requirements, component matching,

very low input-offset errors, and small component geometries. This device requires the presence of

omni-polar magnetic fields for operation.

The package type is in a

Halogen Free version has been verified by third party Lab.

Features and Benefits



CMOS Hall IC Technology

Strong RF noise protection

1.65 to 3.5V for battery-powered applications

Omni polar, output switches with absolute value of North or South pole from magnet

Operation down to 1.65V, Micro power consumption

High Sensitivity for reed switch replacement applications

Multi Small Size option

Low sensitivity drift in crossing of Temp. range

Ultra Low power consumption at 5uA (Avg)

 High ESD Protection, HBM > ±4KV( min )

 Totem-pole output

Applications

 Solid state switch

 Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video

Set)

 Lid close sensor for battery powered devices

 Magnet proximity sensor for reed switch replacement in low duty cycle applications

 Water Meter

 Floating Meter

 PDVD

 NB

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HALLWEE Electronics CO, . LTD

Absolute Maximum Ratings At(Ta=25℃)

Characteristics

Supply voltage,(VDD)

Output Voltage,(Vout)

Reverse Voltage , (VDD) (VOUT)

Magnetic flux density

Output current,(IOUT)

Operating temperature range, (Ta)

Storage temperature range, (Ts)

Maximum Junction Temp,(Tj)

Thermal Resistance

(θJA)

ST / UA

HAL251Unit

Gauss

℃

Values

4.5

-0.3

Unlimited

-40 to +85

-65 to +150

150

310 / 540 / 206 / 543

223 / 390 / 148 / 410

400 / 230 / 606 / 230

℃/W

(θJC)

ST / UA

Package Power Dissipation, (PD)

/ UA

Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-

rated conditions for extended periods may affect device reliability.

Electrical Specifications

DC Operating Parameters：Ta=25℃, VDD=1.8V

Parameters

Supply Voltage,(VDD)

Supply Current,(IDD)

Output Leakage Current,(Ioff)

Output High Voltage,(VOH)

Output Low Voltage,(VOL)

Awake mode time,(Taw)

Sleep mode time,(TSL)

Duty Cycle,(D,C)

Electro-Static Discharge

Test Conditions

Operating

Awake State

Sleep State

Average

Output off

IOUT=0.5mA(Source)

IOUT=0.5mA(Sink)

Operating

HBM

Min

1.65

VDD-0.2

Typ

1.4

3.6

Max

3.5

Units

μA

0.1

0.2

Typical Application circuit

VccC1：10nF

C2：100pF

VDDOutC1251GNDOutC2

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HALLWEE Electronics CO, . LTD

Parameter Symbol

Operating

Point

Release

Point

Hysteresis

BOPS

BOPN

BRPS

BRPN

BHYS

HAL251251EUAMagnetic Specifications

Min. Typ. Max. Units

-55

-30

-20

-10

Gauss

DC Operating Parameters：Ta=25℃, VDD=1.8V

Test Conditions

S pole to branded side, B > BOP, Vout On

N pole to branded side, B > BOP, Vout On

S pole to branded side, B < BRP, Vout Off

N pole to branded side, B < BRP, Vout Off

|BOPx - BRPx|

251ESTMagnetic Specifications

Parameter Symbol

Operating

Point

Release

Point

Hysteresis

Min. Typ. Max. Units

-55

-30

-20

-10

Gauss

DC Operating Parameters：Ta=25℃, VDD=1.8V

Test Conditions

N pole to branded side, B > BOP, Vout On

S pole to branded side, B > BOP, Vout On

N pole to branded side, B < BRP, Vout Off

S pole to branded side, B < BRP, Vout Off

|BOPx - BRPx|

BOPS

BOPN

BRPS

BRPN

BHYS

251E ST/UAOutput Behavior versus Magnetic Polar

DC Operating Parameters：Ta = -40 to 85℃, Vdd =1.8V to 3.5V

Parameter

South pole

Null or weak magnetic field

North pole

South Pole

OUT(SN)

Low

High

Low

Test condition

B=0 or B < BRP

B>Bop(55~10)

North PoleOUT(ST)

Low

High

Low

Test condition

B=0 or B < BRP

B>Bop(55~10)

North PoleSouth Pole

UAPackage

ST Package

High StateHigh State

Low StateOutput

Voltage

VoltsLow StateVsatBOPNBRPN0BRPSBOPSMagnetic Flux Density in Gauss

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HALLWEE Electronics CO, . LTD

HAL251Performance Graph

Typical Supply Voltage(VDD) Versus Flux Density

45.035.025.0

)ssua15.0G(yt5.0BOPSiBOPNsneD-5.0BRPS

xuBRPNl-15.0F-25.0-35.0-45.01.651.822.52.73.03.33.5Supply Voltage(V)

Typical Temperature(TA) Versus Supply Current(IDD)

15.013.0Sleep Current(uA)

n11.0Awarke Current(mA)Average Current(uA)oitpm9.0usno7.0C

tn5.0erruC3.0

1.0-1.0-40-2Temperature(℃)

Typical Supply Voltage(VDD) Versus Output Voltage(VDSON)250.0

)V200.0m(e

gatlo150.0V

noitaru100.0taS

tupt50.0uO0.01.651.822.52.73.03.33.5Supply Voltage(V)

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Typical Temperature(TA) Versus Flux Density

45.035.025.0

)ssua15.0GBOPS(yt5.0iBOPNsneD-5.0BRPS

xul-15.0BRPNF-25.0-35.0-45.0-40-2Temperature(℃)

Typical Supply Voltage(VDD) Versus Supply Current(IDD)

15.013.0Sleep Current(uA)Awarke Current(mA)

no11.0Average Current(uA)itpm9.0usnoC7.0

tner5.0ruC3.01.0-1.01.651.822.52.73.03.33.5Supply Voltage(V)

Typical Temperature(TA) Versus Output Voltage(VDSON)

250.0

)Vm200.0(e

gatloV150.0

noitaru100.0taS

tuptu50.0O0.0-40-2Temperature(℃)

HALLWEE Electronics CO, . LTD

0.050

HAL251

Typical Supply Voltage(VDD) Versus Leakage Current(IOFF) Power Dissipation versus Temperature(TA)

700UA Package

Package

power

Dissipation(mW)

Output

Leakage

Current(uA)

6001000SN Package

RRRθja

= 206℃/w

0.040ST Package

θja

= 310℃/w

0.030SQ Package

θja

= 543℃/w

0.0200.010Rθja

= 540℃/w

-4004080120Temperature(℃)

1600.0001.651.822.52.73.03.33.5Supply Voltage(V)

Package Power Dissipation

The power dissipation of the Package is a function of the pad size. This can vary from the

minimum pad size for soldering to a pad size given for maximum power dissipation. Power

dissipation for a surface mount device is determined by TJ(max), the maximum rated junction

temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the

operating temperature, Ta. Using the values provided on the data sheet for the package, PD can be

calculated as follows:

PD=TJ(max)-TaRθ j a

The values for the equation are found in the maximum ratings table on the data sheet.

Substituting these values into the equation for an ambient temperature Ta of 25°C, one can calculate

the power dissipation of the device which in this case is 400 milliwatts.

150°C-25°C=400mW

PD(ST)=310°C/W

The 310℃/W for the ST package assumes the use of the recommended footprint on a glass

epoxy printed circuit board to achieve a power dissipation of 400 milliwatts. There are other

alternatives to achieving higher power dissipation from the Package. Another alternative would be to

use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material

such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the

same footprint.

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HALLWEE Electronics CO, . LTD

HAL251Sensor Location, package dimension and marking

Package(TSOT-23) Hall Plate Chip Location

(Top View)

(Bottom view)

NOTES:

1. PINOUT (See Top View at left:)

Pin 1 VDD

Pin 2 Output

Pin 3 GND

2. Controlling dimension: mm;

30.803251XX12Hall SensorLocation211.45

UAPackage

HallChip location

2.00

1.00251XXXNOTES:1).Controlling dimension:mm 2).Leads must be free

of flash

and plating voids

3).Do not bendleads within

1 mm of lead to package

interface.4).PINOUT: Pin 1 VDDPin 2 GNDPin 3 Output

Hall SensorLocationMarkOutput Pin Assignment(Topview)

251XXX123VDDGNDOut

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