2024年3月15日发(作者：沃诗柳)
FFAF30U60DN
FFAF30U60DN
Features
•High voltage and high reliability
•High speed switching
•Low forward voltage
Applications
•
•
•
•
General purpose
Switching mode power supply
Free-wheeling diode for motor application
Power switching circuits
TO-3PF
1 2 3
1. Anode e 3. Anode
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
(per diode) T
C
=25°C unless otherwise noted
Symbol
V
RRM
I
F(AV)
I
FSM
T
J,
T
STG
Parameter
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ T
C
= 100°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Value
600
30
180
- 65 to +150
Units
V
A
A
°C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Value
0.8
Units
°C/W
Electrical Characteristics
(per diode) T
C
=25 °C unless otherwise noted
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 30A
I
F
= 30A
Maximum Instantaneous Reverse Current
@ rated V
R
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
F
=30A, di/dt = 200A/µs)
Avalanche Energy
Min.
T
C
= 25 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 100 °C
-
-
-
-
-
-
-
1.0
Typ.
-
-
-
-
-
-
-
-
Max.
2.3
2.1
µA
15
150
90
8
360
-
ns
A
nC
mJ
Units
V
I
RM
*
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2000 Fairchild Semiconductor InternationalRev. F, September 2000
FFAF30U60DN
Typical Characteristics
60
1000
10
T
C
= 100C
o
R
e
v
e
r
s
e
C
u
r
r
e
n
t
,
I
R
[
µ
A
]
100
F
o
r
w
a
r
d
C
u
r
r
e
n
t
,
I
F
[
A
]
T
C
= 100C
o
10
T
C
= 25C
1
o
1
T
C
= 25C
0.1
o
0.01
0.1
0.00.51.01.52.02.53.0
1E-3
100600
Forward Voltage , V
F
[V]Reverse Voltage , V
R
[V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
300
100
Figure 2. Typical Reverse Current
vs. Reverse Voltage
R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
T
i
m
e
,
t
r
r
[
n
s
]
Typical Capacitance
at 0V = 278 pF
I
F
= 30A
90
T
C
= 25C
o
C
a
p
a
c
i
t
a
n
c
e
,
C
j
[
p
F
]
200
80
70
100
60
50
0.1110100
40
100500
Reverse Voltage , V
R
[V]
di/dt [A/
µ
s]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
50
R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
C
u
r
r
e
n
t
,
I
r
r
[
A
]
14
12
10
8
6
4
2
0
100
I
F
= 30A
o
T
C
= 25C
F
(
A
V
)
[
A
]
A
v
e
r
a
g
e
F
o
r
w
a
r
d
C
u
r
r
e
n
t
,
I
16
40
30
20
10
500
0
6080100120
o
140160
di/dt [A/
µ
s]
Case Temperature , T
C
[C]
Figure 5. Typical Reverse Recovery Current
vs. di/dt
©2000 Fairchild Semiconductor International
Figure 6. Forward Current Derating Curve
Rev. F, September 2000
C
D
2024年3月15日发(作者：沃诗柳)
FFAF30U60DN
FFAF30U60DN
Features
•High voltage and high reliability
•High speed switching
•Low forward voltage
Applications
•
•
•
•
General purpose
Switching mode power supply
Free-wheeling diode for motor application
Power switching circuits
TO-3PF
1 2 3
1. Anode e 3. Anode
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
(per diode) T
C
=25°C unless otherwise noted
Symbol
V
RRM
I
F(AV)
I
FSM
T
J,
T
STG
Parameter
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ T
C
= 100°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Value
600
30
180
- 65 to +150
Units
V
A
A
°C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Value
0.8
Units
°C/W
Electrical Characteristics
(per diode) T
C
=25 °C unless otherwise noted
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 30A
I
F
= 30A
Maximum Instantaneous Reverse Current
@ rated V
R
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
F
=30A, di/dt = 200A/µs)
Avalanche Energy
Min.
T
C
= 25 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 100 °C
-
-
-
-
-
-
-
1.0
Typ.
-
-
-
-
-
-
-
-
Max.
2.3
2.1
µA
15
150
90
8
360
-
ns
A
nC
mJ
Units
V
I
RM
*
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2000 Fairchild Semiconductor InternationalRev. F, September 2000
FFAF30U60DN
Typical Characteristics
60
1000
10
T
C
= 100C
o
R
e
v
e
r
s
e
C
u
r
r
e
n
t
,
I
R
[
µ
A
]
100
F
o
r
w
a
r
d
C
u
r
r
e
n
t
,
I
F
[
A
]
T
C
= 100C
o
10
T
C
= 25C
1
o
1
T
C
= 25C
0.1
o
0.01
0.1
0.00.51.01.52.02.53.0
1E-3
100600
Forward Voltage , V
F
[V]Reverse Voltage , V
R
[V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
300
100
Figure 2. Typical Reverse Current
vs. Reverse Voltage
R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
T
i
m
e
,
t
r
r
[
n
s
]
Typical Capacitance
at 0V = 278 pF
I
F
= 30A
90
T
C
= 25C
o
C
a
p
a
c
i
t
a
n
c
e
,
C
j
[
p
F
]
200
80
70
100
60
50
0.1110100
40
100500
Reverse Voltage , V
R
[V]
di/dt [A/
µ
s]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
50
R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
C
u
r
r
e
n
t
,
I
r
r
[
A
]
14
12
10
8
6
4
2
0
100
I
F
= 30A
o
T
C
= 25C
F
(
A
V
)
[
A
]
A
v
e
r
a
g
e
F
o
r
w
a
r
d
C
u
r
r
e
n
t
,
I
16
40
30
20
10
500
0
6080100120
o
140160
di/dt [A/
µ
s]
Case Temperature , T
C
[C]
Figure 5. Typical Reverse Recovery Current
vs. di/dt
©2000 Fairchild Semiconductor International
Figure 6. Forward Current Derating Curve
Rev. F, September 2000
C
D