2024年3月21日发(作者：太史茜茜)
7
K2832837
i
conN-Ch
a
nnelMOS
F
ETSililiChaOSF
Features
■
24A,500V,R
DS(on)
(Max0.19Ω)@V
GS
=10V
■
Ultra-lowGatecharge(Typical90nC)
■
FastSwitchingCapability
■
100%AvalancheTested
■
MaximumJunctionTemperatureRange(150℃)
GeneralDescription
ThisN-Channelenhancementmodepowerfieldeffecttransistors
areproducedusingWinsemi'sproprietary,planarstripe,DMOS
vancedtechnologyhasbeenespeciallytailored
tominimizeon-stateresistance,providesuperiorswitching
performance,andwithstandhighenergypulseintheavalancheand
evicesarewellsuitedforhigh
efficiencyswitchmodepowersupplies.
AbsoluteMaximumRatings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
J
,T
stg
T
L
DrainSourceVoltage
ContinuousDrainCurrent(@Tc=25
℃
)
ContinuousDrainCurrent(@Tc=100
℃
)
DrainCurrentPulsed
GatetoSourceVoltage
SinglePulsedAvalancheEnergy
RepetitiveAvalancheEnergy
PeakDiodeRecoverydv/dt
TotalPowerDissipation(@Tc=25℃)
DeratingFactorabove25
℃
JunctionandStorageTemperature
ChannelTemperature
(Note2)
(Note1)
(Note3)
(Note1)
ParameterValue
500
24
15.2
96
±30
1100
29
4.5
271
2.22
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
℃
℃
℃
ThermalCharacteristics
Symbol
R
QJC
R
QJA
Parameter
ThermalResistance,Junction-to-Case
ThermalResistance,Junction-to-Ambient
Value
Min
-
-
Typ
-
-
Max
0.46
40
Units
℃
/W
℃/W
.2010
Copyright@WinsemiMicroelectronicsCo.,Ltd.,Allrightreserved.
7
K2832837
ElectricalCharacteristics(Tc=25℃)
Characteristics
Gateleakagecurrent
Gate-sourcebreakdownvoltage
Draincut-offcurrent
Drain-sourcebreakdownvoltage
BreakdownvoltageTemperature
coefficient
Gatethresholdvoltage
Drain-sourceONresistance
ForwardTransconductance
Inputcapacitance
Reversetransfercapacitance
Outputcapacitance
Risetime
Switchingtime
Turn-ontime
Falltime
Turn-offtime
Totalgatecharge(gate-source
plusgate-drain)
Gate-sourcecharge
Gate-drain("miller")Charge
Symbol
I
GSS
V
(BR)GSS
I
DSS
V
(BR)DSS
△BV
DSS
/
△
T
J
V
GS(th)
R
DS(ON)
gfs
C
iss
C
rss
C
oss
tr
ton
tf
toff
Qg
Qgs
Qgd
TestCondition
V
GS
=±25V,V
DS
=0V
I
G
=±10µA,V
DS
=0V
V
DS
=500V,V
GS
=0V
V
DS
=400V,Tc=125℃
I
D
=10mA,V
GS
=0V
I
D
=250µA,Referenced
to25℃
V
DS
=10V,I
D
=1mA
V
GS
=10V,I
D
=9A
V
DS
=40V,I
D
=9A
V
DS
=25V,
V
GS
=0V,
f=1MHz
V
DD
=250V,
I
D
=18A
R
G
=25Ω
(Note4,5)
V
DD
=400V,
V
GS
=10V,
I
D
=18A
(Note4,5)
Min
-
±30
-
Type
-
-
-
Max
±100
-
1
10
Unit
nA
V
µA
500
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
0.53
-
0.16
22
3500
55
520
250
80
155
200
90
23
44
-
-
5.0
0.19
-
4500
70
670
500
170
320
400
120
-
-
V
V/℃
V
Ω
S
pF
ns
nC
Source-DrainRatingsandCharacteristics(Ta=25℃)
Characteristics
Continuousdrainreversecurrent
Pulsedrainreversecurrent
Forwardvoltage(diode)
Reverserecoverytime
Reverserecoverycharge
Symbol
I
DR
I
DRP
V
DSF
trr
Qrr
TestCondition
-
-
I
DR
=24A,V
GS
=0V
I
DR
=24A,V
GS
=0V,
dI
DR
/dt=100A/µs
Min
-
-
-
-
-
Type
-
-
-
400
4.3
Max
24
96
1.4
-
-
Unit
A
A
V
ns
µC
ivityrating:pulsewidthlimitedbyjunctiontemperature
2.L=3.4mHI
AS
=24A,V
DD
=50V,R
G
=25Ω,StartingT
J
=25
℃
3.I
SD
≤24A,di/dt≤200A/us,V
DD
DSS ,STARTINGT J =25 ℃ est:PulseWidth≤300us,DutyCycle≤2% iallyindependentofoperatingtemperature. Thistransistorisanelectrostaticsensitivedevice Pleasehandlewithcaution 2/7 Steady,keepyouadvance 7 K2832837 a teCh a rac t eristi c sFig.1OnStStaChaacttic e ntCh a rac t eristi c sFig.2TransferCurrCurreChaacttic esi stanceVariationvsFig.3On-Rn-Resesi a inCurr e ntandgatevolt a geDrDraCurreolta w ardVol t ageFig.4BodyDiodeForForwolt c eCurr e ntandVariationwithSourSourcCurre p eratureTememp i tanceCh a rac t eri s ticsFig.5CapacaciChaactris Fig.6GateChargeCharacteristics ChaChaacttic 3/7 Steady,keepyouadvance 7 K2832837 eakd ownVol t ageVariationFig.7BrBreakeakdolt esi stanceVariationFig.8On-Rn-Resesi p i mumSafeOperationAreaFig.9MaxMaxi 1 0Max i mumDr a inCurr e .1MaxiDraCurre e Tem p eratureCasaseemp . 11TransientTh e rma l Res p on s eCur v esponsCurv 4/7 Steady,keepyouadvance 7 K2832837 1 2GateTes t Cir c uit&.1estCirc 1 3Res i sti v eSwitchingTes t Cir c uit&.1esitivestCirc 1 .1 c lam p edUnUncamp c ti v eInduInductivSwitching t Tesest c uitCirCirc& 5/7 Steady,keepyouadvance 7 K2832837 1 5Pea k DiodeRec o verydv/dtTes t Cir c uit&.1eakecoestCirc 6/7 Steady,keepyouadvance 7 K2832837 4 7Packa g eDim e nsionTO-2-24ckagDime Unit:mm 7/7 Steady,keepyouadvance
2024年3月21日发(作者：太史茜茜)
7
K2832837
i
conN-Ch
a
nnelMOS
F
ETSililiChaOSF
Features
■
24A,500V,R
DS(on)
(Max0.19Ω)@V
GS
=10V
■
Ultra-lowGatecharge(Typical90nC)
■
FastSwitchingCapability
■
100%AvalancheTested
■
MaximumJunctionTemperatureRange(150℃)
GeneralDescription
ThisN-Channelenhancementmodepowerfieldeffecttransistors
areproducedusingWinsemi'sproprietary,planarstripe,DMOS
vancedtechnologyhasbeenespeciallytailored
tominimizeon-stateresistance,providesuperiorswitching
performance,andwithstandhighenergypulseintheavalancheand
evicesarewellsuitedforhigh
efficiencyswitchmodepowersupplies.
AbsoluteMaximumRatings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
J
,T
stg
T
L
DrainSourceVoltage
ContinuousDrainCurrent(@Tc=25
℃
)
ContinuousDrainCurrent(@Tc=100
℃
)
DrainCurrentPulsed
GatetoSourceVoltage
SinglePulsedAvalancheEnergy
RepetitiveAvalancheEnergy
PeakDiodeRecoverydv/dt
TotalPowerDissipation(@Tc=25℃)
DeratingFactorabove25
℃
JunctionandStorageTemperature
ChannelTemperature
(Note2)
(Note1)
(Note3)
(Note1)
ParameterValue
500
24
15.2
96
±30
1100
29
4.5
271
2.22
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
℃
℃
℃
ThermalCharacteristics
Symbol
R
QJC
R
QJA
Parameter
ThermalResistance,Junction-to-Case
ThermalResistance,Junction-to-Ambient
Value
Min
-
-
Typ
-
-
Max
0.46
40
Units
℃
/W
℃/W
.2010
Copyright@WinsemiMicroelectronicsCo.,Ltd.,Allrightreserved.
7
K2832837
ElectricalCharacteristics(Tc=25℃)
Characteristics
Gateleakagecurrent
Gate-sourcebreakdownvoltage
Draincut-offcurrent
Drain-sourcebreakdownvoltage
BreakdownvoltageTemperature
coefficient
Gatethresholdvoltage
Drain-sourceONresistance
ForwardTransconductance
Inputcapacitance
Reversetransfercapacitance
Outputcapacitance
Risetime
Switchingtime
Turn-ontime
Falltime
Turn-offtime
Totalgatecharge(gate-source
plusgate-drain)
Gate-sourcecharge
Gate-drain("miller")Charge
Symbol
I
GSS
V
(BR)GSS
I
DSS
V
(BR)DSS
△BV
DSS
/
△
T
J
V
GS(th)
R
DS(ON)
gfs
C
iss
C
rss
C
oss
tr
ton
tf
toff
Qg
Qgs
Qgd
TestCondition
V
GS
=±25V,V
DS
=0V
I
G
=±10µA,V
DS
=0V
V
DS
=500V,V
GS
=0V
V
DS
=400V,Tc=125℃
I
D
=10mA,V
GS
=0V
I
D
=250µA,Referenced
to25℃
V
DS
=10V,I
D
=1mA
V
GS
=10V,I
D
=9A
V
DS
=40V,I
D
=9A
V
DS
=25V,
V
GS
=0V,
f=1MHz
V
DD
=250V,
I
D
=18A
R
G
=25Ω
(Note4,5)
V
DD
=400V,
V
GS
=10V,
I
D
=18A
(Note4,5)
Min
-
±30
-
Type
-
-
-
Max
±100
-
1
10
Unit
nA
V
µA
500
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
0.53
-
0.16
22
3500
55
520
250
80
155
200
90
23
44
-
-
5.0
0.19
-
4500
70
670
500
170
320
400
120
-
-
V
V/℃
V
Ω
S
pF
ns
nC
Source-DrainRatingsandCharacteristics(Ta=25℃)
Characteristics
Continuousdrainreversecurrent
Pulsedrainreversecurrent
Forwardvoltage(diode)
Reverserecoverytime
Reverserecoverycharge
Symbol
I
DR
I
DRP
V
DSF
trr
Qrr
TestCondition
-
-
I
DR
=24A,V
GS
=0V
I
DR
=24A,V
GS
=0V,
dI
DR
/dt=100A/µs
Min
-
-
-
-
-
Type
-
-
-
400
4.3
Max
24
96
1.4
-
-
Unit
A
A
V
ns
µC
ivityrating:pulsewidthlimitedbyjunctiontemperature
2.L=3.4mHI
AS
=24A,V
DD
=50V,R
G
=25Ω,StartingT
J
=25
℃
3.I
SD
≤24A,di/dt≤200A/us,V
DD
DSS ,STARTINGT J =25 ℃ est:PulseWidth≤300us,DutyCycle≤2% iallyindependentofoperatingtemperature. Thistransistorisanelectrostaticsensitivedevice Pleasehandlewithcaution 2/7 Steady,keepyouadvance 7 K2832837 a teCh a rac t eristi c sFig.1OnStStaChaacttic e ntCh a rac t eristi c sFig.2TransferCurrCurreChaacttic esi stanceVariationvsFig.3On-Rn-Resesi a inCurr e ntandgatevolt a geDrDraCurreolta w ardVol t ageFig.4BodyDiodeForForwolt c eCurr e ntandVariationwithSourSourcCurre p eratureTememp i tanceCh a rac t eri s ticsFig.5CapacaciChaactris Fig.6GateChargeCharacteristics ChaChaacttic 3/7 Steady,keepyouadvance 7 K2832837 eakd ownVol t ageVariationFig.7BrBreakeakdolt esi stanceVariationFig.8On-Rn-Resesi p i mumSafeOperationAreaFig.9MaxMaxi 1 0Max i mumDr a inCurr e .1MaxiDraCurre e Tem p eratureCasaseemp . 11TransientTh e rma l Res p on s eCur v esponsCurv 4/7 Steady,keepyouadvance 7 K2832837 1 2GateTes t Cir c uit&.1estCirc 1 3Res i sti v eSwitchingTes t Cir c uit&.1esitivestCirc 1 .1 c lam p edUnUncamp c ti v eInduInductivSwitching t Tesest c uitCirCirc& 5/7 Steady,keepyouadvance 7 K2832837 1 5Pea k DiodeRec o verydv/dtTes t Cir c uit&.1eakecoestCirc 6/7 Steady,keepyouadvance 7 K2832837 4 7Packa g eDim e nsionTO-2-24ckagDime Unit:mm 7/7 Steady,keepyouadvance