2024年3月21日发(作者：太史茜茜)

7

K2832837

i

conN-Ch

a

nnelMOS

F

ETSililiChaOSF

Features

■

24A,500V,R

DS(on)

(Max0.19Ω)@V

GS

=10V

■

Ultra-lowGatecharge(Typical90nC)

■

FastSwitchingCapability

■

100%AvalancheTested

■

MaximumJunctionTemperatureRange(150℃)

GeneralDescription

ThisN-Channelenhancementmodepowerfieldeffecttransistors

areproducedusingWinsemi'sproprietary,planarstripe,DMOS

vancedtechnologyhasbeenespeciallytailored

tominimizeon-stateresistance,providesuperiorswitching

performance,andwithstandhighenergypulseintheavalancheand

evicesarewellsuitedforhigh

efficiencyswitchmodepowersupplies.

AbsoluteMaximumRatings

Symbol

V

DSS

I

D

I

DM

V

GS

E

AS

E

AR

dv/dt

P

D

T

J

,T

stg

T

L

DrainSourceVoltage

ContinuousDrainCurrent(@Tc=25

℃

)

ContinuousDrainCurrent(@Tc=100

℃

)

DrainCurrentPulsed

GatetoSourceVoltage

SinglePulsedAvalancheEnergy

RepetitiveAvalancheEnergy

PeakDiodeRecoverydv/dt

TotalPowerDissipation(@Tc=25℃)

DeratingFactorabove25

℃

JunctionandStorageTemperature

ChannelTemperature

(Note2)

(Note1)

(Note3)

(Note1)

ParameterValue

500

24

15.2

96

±30

1100

29

4.5

271

2.22

-55~150

300

Units

V

A

A

A

V

mJ

mJ

V/ns

W

W/

℃

℃

℃

ThermalCharacteristics

Symbol

R

QJC

R

QJA

Parameter

ThermalResistance,Junction-to-Case

ThermalResistance,Junction-to-Ambient

Value

Min

-

-

Typ

-

-

Max

0.46

40

Units

℃

/W

℃/W

.2010

Copyright@WinsemiMicroelectronicsCo.,Ltd.,Allrightreserved.

7

K2832837

ElectricalCharacteristics(Tc=25℃)

Characteristics

Gateleakagecurrent

Gate-sourcebreakdownvoltage

Draincut-offcurrent

Drain-sourcebreakdownvoltage

BreakdownvoltageTemperature

coefficient

Gatethresholdvoltage

Drain-sourceONresistance

ForwardTransconductance

Inputcapacitance

Reversetransfercapacitance

Outputcapacitance

Risetime

Switchingtime

Turn-ontime

Falltime

Turn-offtime

Totalgatecharge(gate-source

plusgate-drain)

Gate-sourcecharge

Gate-drain("miller")Charge

Symbol

I

GSS

V

(BR)GSS

I

DSS

V

(BR)DSS

△BV

DSS

/

△

T

J

V

GS(th)

R

DS(ON)

gfs

C

iss

C

rss

C

oss

tr

ton

tf

toff

Qg

Qgs

Qgd

TestCondition

V

GS

=±25V,V

DS

=0V

I

G

=±10µA,V

DS

=0V

V

DS

=500V,V

GS

=0V

V

DS

=400V,Tc=125℃

I

D

=10mA,V

GS

=0V

I

D

=250µA,Referenced

to25℃

V

DS

=10V,I

D

=1mA

V

GS

=10V,I

D

=9A

V

DS

=40V,I

D

=9A

V

DS

=25V,

V

GS

=0V,

f=1MHz

V

DD

=250V,

I

D

=18A

R

G

=25Ω

(Note4,5)

V

DD

=400V,

V

GS

=10V,

I

D

=18A

(Note4,5)

Min

-

±30

-

Type

-

-

-

Max

±100

-

1

10

Unit

nA

V

µA

500

-

3.0

-

-

-

-

-

-

-

-

-

-

-

-

-

0.53

-

0.16

22

3500

55

520

250

80

155

200

90

23

44

-

-

5.0

0.19

-

4500

70

670

500

170

320

400

120

-

-

V

V/℃

V

Ω

S

pF

ns

nC

Source-DrainRatingsandCharacteristics(Ta=25℃)

Characteristics

Continuousdrainreversecurrent

Pulsedrainreversecurrent

Forwardvoltage(diode)

Reverserecoverytime

Reverserecoverycharge

Symbol

I

DR

I

DRP

V

DSF

trr

Qrr

TestCondition

-

-

I

DR

=24A,V

GS

=0V

I

DR

=24A,V

GS

=0V,

dI

DR

/dt=100A/µs

Min

-

-

-

-

-

Type

-

-

-

400

4.3

Max

24

96

1.4

-

-

Unit

A

A

V

ns

µC

ivityrating:pulsewidthlimitedbyjunctiontemperature

2.L=3.4mHI

AS

=24A,V

DD

=50V,R

G

=25Ω,StartingT

J

=25

℃

3.I

SD

≤24A,di/dt≤200A/us,V

DD

DSS

,STARTINGT

J

=25

℃

est:PulseWidth≤300us,DutyCycle≤2%

iallyindependentofoperatingtemperature.

Thistransistorisanelectrostaticsensitivedevice

Pleasehandlewithcaution

2/7

Steady,keepyouadvance

7

K2832837

a

teCh

a

rac

t

eristi

c

sFig.1OnStStaChaacttic

e

ntCh

a

rac

t

eristi

c

sFig.2TransferCurrCurreChaacttic

esi

stanceVariationvsFig.3On-Rn-Resesi

a

inCurr

e

ntandgatevolt

a

geDrDraCurreolta

w

ardVol

t

ageFig.4BodyDiodeForForwolt

c

eCurr

e

ntandVariationwithSourSourcCurre

p

eratureTememp

i

tanceCh

a

rac

t

eri

s

ticsFig.5CapacaciChaactris

Fig.6GateChargeCharacteristics

ChaChaacttic

3/7

Steady,keepyouadvance

7

K2832837

eakd

ownVol

t

ageVariationFig.7BrBreakeakdolt

esi

stanceVariationFig.8On-Rn-Resesi

p

i

mumSafeOperationAreaFig.9MaxMaxi

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i

mumDr

a

inCurr

e

.1MaxiDraCurre

e

Tem

p

eratureCasaseemp

.

11TransientTh

e

rma

l

Res

p

on

s

eCur

v

esponsCurv

4/7

Steady,keepyouadvance

7

K2832837

1

2GateTes

t

Cir

c

uit&.1estCirc

1

3Res

i

sti

v

eSwitchingTes

t

Cir

c

uit&.1esitivestCirc

1

.1

c

lam

p

edUnUncamp

c

ti

v

eInduInductivSwitching

t

Tesest

c

uitCirCirc&

5/7

Steady,keepyouadvance

7

K2832837

1

5Pea

k

DiodeRec

o

verydv/dtTes

t

Cir

c

uit&.1eakecoestCirc

6/7

Steady,keepyouadvance

7

K2832837

4

7Packa

g

eDim

e

nsionTO-2-24ckagDime

Unit:mm

7/7

Steady,keepyouadvance

2024年3月21日发(作者：太史茜茜)

7

K2832837

i

conN-Ch

a

nnelMOS

F

ETSililiChaOSF

Features

■

24A,500V,R

DS(on)

(Max0.19Ω)@V

GS

=10V

■

Ultra-lowGatecharge(Typical90nC)

■

FastSwitchingCapability

■

100%AvalancheTested

■

MaximumJunctionTemperatureRange(150℃)

GeneralDescription

ThisN-Channelenhancementmodepowerfieldeffecttransistors

areproducedusingWinsemi'sproprietary,planarstripe,DMOS

vancedtechnologyhasbeenespeciallytailored

tominimizeon-stateresistance,providesuperiorswitching

performance,andwithstandhighenergypulseintheavalancheand

evicesarewellsuitedforhigh

efficiencyswitchmodepowersupplies.

AbsoluteMaximumRatings

Symbol

V

DSS

I

D

I

DM

V

GS

E

AS

E

AR

dv/dt

P

D

T

J

,T

stg

T

L

DrainSourceVoltage

ContinuousDrainCurrent(@Tc=25

℃

)

ContinuousDrainCurrent(@Tc=100

℃

)

DrainCurrentPulsed

GatetoSourceVoltage

SinglePulsedAvalancheEnergy

RepetitiveAvalancheEnergy

PeakDiodeRecoverydv/dt

TotalPowerDissipation(@Tc=25℃)

DeratingFactorabove25

℃

JunctionandStorageTemperature

ChannelTemperature

(Note2)

(Note1)

(Note3)

(Note1)

ParameterValue

500

24

15.2

96

±30

1100

29

4.5

271

2.22

-55~150

300

Units

V

A

A

A

V

mJ

mJ

V/ns

W

W/

℃

℃

℃

ThermalCharacteristics

Symbol

R

QJC

R

QJA

Parameter

ThermalResistance,Junction-to-Case

ThermalResistance,Junction-to-Ambient

Value

Min

-

-

Typ

-

-

Max

0.46

40

Units

℃

/W

℃/W

.2010

Copyright@WinsemiMicroelectronicsCo.,Ltd.,Allrightreserved.

7

K2832837

ElectricalCharacteristics(Tc=25℃)

Characteristics

Gateleakagecurrent

Gate-sourcebreakdownvoltage

Draincut-offcurrent

Drain-sourcebreakdownvoltage

BreakdownvoltageTemperature

coefficient

Gatethresholdvoltage

Drain-sourceONresistance

ForwardTransconductance

Inputcapacitance

Reversetransfercapacitance

Outputcapacitance

Risetime

Switchingtime

Turn-ontime

Falltime

Turn-offtime

Totalgatecharge(gate-source

plusgate-drain)

Gate-sourcecharge

Gate-drain("miller")Charge

Symbol

I

GSS

V

(BR)GSS

I

DSS

V

(BR)DSS

△BV

DSS

/

△

T

J

V

GS(th)

R

DS(ON)

gfs

C

iss

C

rss

C

oss

tr

ton

tf

toff

Qg

Qgs

Qgd

TestCondition

V

GS

=±25V,V

DS

=0V

I

G

=±10µA,V

DS

=0V

V

DS

=500V,V

GS

=0V

V

DS

=400V,Tc=125℃

I

D

=10mA,V

GS

=0V

I

D

=250µA,Referenced

to25℃

V

DS

=10V,I

D

=1mA

V

GS

=10V,I

D

=9A

V

DS

=40V,I

D

=9A

V

DS

=25V,

V

GS

=0V,

f=1MHz

V

DD

=250V,

I

D

=18A

R

G

=25Ω

(Note4,5)

V

DD

=400V,

V

GS

=10V,

I

D

=18A

(Note4,5)

Min

-

±30

-

Type

-

-

-

Max

±100

-

1

10

Unit

nA

V

µA

500

-

3.0

-

-

-

-

-

-

-

-

-

-

-

-

-

0.53

-

0.16

22

3500

55

520

250

80

155

200

90

23

44

-

-

5.0

0.19

-

4500

70

670

500

170

320

400

120

-

-

V

V/℃

V

Ω

S

pF

ns

nC

Source-DrainRatingsandCharacteristics(Ta=25℃)

Characteristics

Continuousdrainreversecurrent

Pulsedrainreversecurrent

Forwardvoltage(diode)

Reverserecoverytime

Reverserecoverycharge

Symbol

I

DR

I

DRP

V

DSF

trr

Qrr

TestCondition

-

-

I

DR

=24A,V

GS

=0V

I

DR

=24A,V

GS

=0V,

dI

DR

/dt=100A/µs

Min

-

-

-

-

-

Type

-

-

-

400

4.3

Max

24

96

1.4

-

-

Unit

A

A

V

ns

µC

ivityrating:pulsewidthlimitedbyjunctiontemperature

2.L=3.4mHI

AS

=24A,V

DD

=50V,R

G

=25Ω,StartingT

J

=25

℃

3.I

SD

≤24A,di/dt≤200A/us,V

DD

DSS

,STARTINGT

J

=25

℃

est:PulseWidth≤300us,DutyCycle≤2%

iallyindependentofoperatingtemperature.

Thistransistorisanelectrostaticsensitivedevice

Pleasehandlewithcaution

2/7

Steady,keepyouadvance

7

K2832837

a

teCh

a

rac

t

eristi

c

sFig.1OnStStaChaacttic

e

ntCh

a

rac

t

eristi

c

sFig.2TransferCurrCurreChaacttic

esi

stanceVariationvsFig.3On-Rn-Resesi

a

inCurr

e

ntandgatevolt

a

geDrDraCurreolta

w

ardVol

t

ageFig.4BodyDiodeForForwolt

c

eCurr

e

ntandVariationwithSourSourcCurre

p

eratureTememp

i

tanceCh

a

rac

t

eri

s

ticsFig.5CapacaciChaactris

Fig.6GateChargeCharacteristics

ChaChaacttic

3/7

Steady,keepyouadvance

7

K2832837

eakd

ownVol

t

ageVariationFig.7BrBreakeakdolt

esi

stanceVariationFig.8On-Rn-Resesi

p

i

mumSafeOperationAreaFig.9MaxMaxi

1

0Max

i

mumDr

a

inCurr

e

.1MaxiDraCurre

e

Tem

p

eratureCasaseemp

.

11TransientTh

e

rma

l

Res

p

on

s

eCur

v

esponsCurv

4/7

Steady,keepyouadvance

7

K2832837

1

2GateTes

t

Cir

c

uit&.1estCirc

1

3Res

i

sti

v

eSwitchingTes

t

Cir

c

uit&.1esitivestCirc

1

.1

c

lam

p

edUnUncamp

c

ti

v

eInduInductivSwitching

t

Tesest

c

uitCirCirc&

5/7

Steady,keepyouadvance

7

K2832837

1

5Pea

k

DiodeRec

o

verydv/dtTes

t

Cir

c

uit&.1eakecoestCirc

6/7

Steady,keepyouadvance

7

K2832837

4

7Packa

g

eDim

e

nsionTO-2-24ckagDime

Unit:mm

7/7

Steady,keepyouadvance