2024年4月3日发(作者：蒙蔚然)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO – 92
TO-92 Plastic-Encapsulate Transistors
=
=
=
=
=
=
1. EMITTER
2. COLLECTOR
3. BASE
2SA1048
TRANSISTOR (PNP)
FEATURES
z Small Package
z High Voltage
z Excellent h
FE
Linearity
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
-50
-50
-5
-0.15
200
625
150
-55~+150
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
C
ob
f
T
Test conditions Min Typ Max
Unit
V
V
V
I
C
= -0.1mA,I
E
0 -50
I
E
=-0.1mA,I
C
0 -5
I
C
=-1mA,I
B
0 -50
V
(BR)EBO
V
CB
=-50V,I
E
0 -0.1 μA
V
EB
=-5V,I
C
0 -0.1 μA
V
CE
=-6V, I
C
-2mA 70 400
I
C
=-100mA,I
B
=-10mA
-0.3 V
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-10V,I
C
= -1mA
7 pF
80
MHz
CLASSIFICATION OF h
FE
RANK O
RANGE
Y GR
70-140 120-240 200-400
A,Dec,2010
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
.
3.3003.700
1.1001.400
0.3800.550
0.3600.510
4.3004.700
3.430
4.3004.700
1.270 TYP.
2.4402.640
14.10014.500
1.600
0.0000.380
Dimensions In Inches
.
0.1300.146
0.0430.055
0.0150.022
0.0140.020
0.1690.185
0.135
0.1690.185
0.050 TYP.
0.0960.104
0.5550.571
0.063
0.0000.015
2024年4月3日发(作者：蒙蔚然)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO – 92
TO-92 Plastic-Encapsulate Transistors
=
=
=
=
=
=
1. EMITTER
2. COLLECTOR
3. BASE
2SA1048
TRANSISTOR (PNP)
FEATURES
z Small Package
z High Voltage
z Excellent h
FE
Linearity
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
-50
-50
-5
-0.15
200
625
150
-55~+150
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
C
ob
f
T
Test conditions Min Typ Max
Unit
V
V
V
I
C
= -0.1mA,I
E
0 -50
I
E
=-0.1mA,I
C
0 -5
I
C
=-1mA,I
B
0 -50
V
(BR)EBO
V
CB
=-50V,I
E
0 -0.1 μA
V
EB
=-5V,I
C
0 -0.1 μA
V
CE
=-6V, I
C
-2mA 70 400
I
C
=-100mA,I
B
=-10mA
-0.3 V
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-10V,I
C
= -1mA
7 pF
80
MHz
CLASSIFICATION OF h
FE
RANK O
RANGE
Y GR
70-140 120-240 200-400
A,Dec,2010
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
.
3.3003.700
1.1001.400
0.3800.550
0.3600.510
4.3004.700
3.430
4.3004.700
1.270 TYP.
2.4402.640
14.10014.500
1.600
0.0000.380
Dimensions In Inches
.
0.1300.146
0.0430.055
0.0150.022
0.0140.020
0.1690.185
0.135
0.1690.185
0.050 TYP.
0.0960.104
0.5550.571
0.063
0.0000.015