2024年4月3日发(作者：隽欣怿)
L 40N10
N-Channel Enhancement Mode Field Effect Transistor
Features
z 100V/40A
R
DS (ON)
= 33mΩ (Type) @ VGS=10V
R
DS (ON)
= 45mΩ (Type) @ VGS=4.5V
z Super High Dense Cell Design
z Reliable and Rugged
z TO-252 package
Pin Description
PIN1
Lead Free and Green Devices Available
(ROHS Compliant)
Applications
z Power Management in Notebook Computer,
Portable Equipment and Battery Powered System.
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C unless otherwise noted)
Symbol Parameter Value Unit
V
DSS
Drain-to-Source Voltage 100 V
V
GSS
Gate-to-Source Voltage ±20 V
Continuous Drain Current@ T
J
= 125℃
40 I
D
*
V
GS
=10V A
I
DM
* Pulsed Drain Current (tp ≤10us) 110
Diode Continuous Forward Current
I
S
* 1.25 A
TA = 25℃
50 W
P
D
* Total Power Dissipation
TA = 100℃
25 W
T
J
,
Operating and Storage Temperature Range -55 to 150 ℃
T
STG
Thermal Resistance,
Rth J
A
*
50 ℃/W
Junction-to-Ambient
Maximum Lead Temperature for
T
L
260 ℃
Soldering Purposes, 1/8″from case for 10 seconds
Note: *Surface Mounted on 1in
*
1in
pad
area, t
≤ 10 Secedes.
May 2011 Doc ID 0065 Rev 1 1/8
L 40N10
Electrical characteristics
Electrical characteristics
TCASE = 25 °C unless otherwise specified
Parameter Symbol Test Conditions Min. Typ.
z states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-body leakage current
BVDSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)(a)
VSD
gFS
V
GS
=0V, I
DS
=250μA
V
DS
=80V, V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250µA
V
GS
=10V,I
D
=20A
100
1
V
µA
nA ±100
Gate Threshold Voltage
Drain-Source On-state Resistance
Diode Forward Voltage
Forward Tran conductance
1.5 1.8 2.5 V
33 38
mΩ
V
GS
=4.5V,I
D
=10A
V
GS
=0V,IS=1.25A
V
GS
=7V,I
D
=1A
43
46
0.84 1.3
V
6
S
z Gate charge
Total gate charge
Gate-source charge
Input capacitance
Q
g
Q
gs
Q
g
V
DS
=15V,V
GS
=0V
f=1.0MHZ
V
DS
=15V,I
D
=1A ,
V
GS
=10V
18
2.4
nC
4.4
z Dynamic (b)
Input capacitance
Output capacitance
Reverse transfer capacitance
C
iss
C
oss
C
rss
1079
119
pF
70
z Switching times
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
D(ON)
tr
t
D(OFF)
tf
V
DD
=15V,
I
D
=1A,
V
GEN
=10V
RL=10ohm ,
R
GEN
=10ohm
12
10
52
ns
28
Notes
(a). Surface Mounted on FR4 Board, t≦10sec
(b). Pulse Test: Pulse Width≦300Us, Duty≦2%
(c). Guaranteed by design, not subject to production testing.
May 2011
Doc ID 0065 Rev 1 2/8
2024年4月3日发(作者：隽欣怿)
L 40N10
N-Channel Enhancement Mode Field Effect Transistor
Features
z 100V/40A
R
DS (ON)
= 33mΩ (Type) @ VGS=10V
R
DS (ON)
= 45mΩ (Type) @ VGS=4.5V
z Super High Dense Cell Design
z Reliable and Rugged
z TO-252 package
Pin Description
PIN1
Lead Free and Green Devices Available
(ROHS Compliant)
Applications
z Power Management in Notebook Computer,
Portable Equipment and Battery Powered System.
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C unless otherwise noted)
Symbol Parameter Value Unit
V
DSS
Drain-to-Source Voltage 100 V
V
GSS
Gate-to-Source Voltage ±20 V
Continuous Drain Current@ T
J
= 125℃
40 I
D
*
V
GS
=10V A
I
DM
* Pulsed Drain Current (tp ≤10us) 110
Diode Continuous Forward Current
I
S
* 1.25 A
TA = 25℃
50 W
P
D
* Total Power Dissipation
TA = 100℃
25 W
T
J
,
Operating and Storage Temperature Range -55 to 150 ℃
T
STG
Thermal Resistance,
Rth J
A
*
50 ℃/W
Junction-to-Ambient
Maximum Lead Temperature for
T
L
260 ℃
Soldering Purposes, 1/8″from case for 10 seconds
Note: *Surface Mounted on 1in
*
1in
pad
area, t
≤ 10 Secedes.
May 2011 Doc ID 0065 Rev 1 1/8
L 40N10
Electrical characteristics
Electrical characteristics
TCASE = 25 °C unless otherwise specified
Parameter Symbol Test Conditions Min. Typ.
z states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-body leakage current
BVDSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)(a)
VSD
gFS
V
GS
=0V, I
DS
=250μA
V
DS
=80V, V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250µA
V
GS
=10V,I
D
=20A
100
1
V
µA
nA ±100
Gate Threshold Voltage
Drain-Source On-state Resistance
Diode Forward Voltage
Forward Tran conductance
1.5 1.8 2.5 V
33 38
mΩ
V
GS
=4.5V,I
D
=10A
V
GS
=0V,IS=1.25A
V
GS
=7V,I
D
=1A
43
46
0.84 1.3
V
6
S
z Gate charge
Total gate charge
Gate-source charge
Input capacitance
Q
g
Q
gs
Q
g
V
DS
=15V,V
GS
=0V
f=1.0MHZ
V
DS
=15V,I
D
=1A ,
V
GS
=10V
18
2.4
nC
4.4
z Dynamic (b)
Input capacitance
Output capacitance
Reverse transfer capacitance
C
iss
C
oss
C
rss
1079
119
pF
70
z Switching times
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
D(ON)
tr
t
D(OFF)
tf
V
DD
=15V,
I
D
=1A,
V
GEN
=10V
RL=10ohm ,
R
GEN
=10ohm
12
10
52
ns
28
Notes
(a). Surface Mounted on FR4 Board, t≦10sec
(b). Pulse Test: Pulse Width≦300Us, Duty≦2%
(c). Guaranteed by design, not subject to production testing.
May 2011
Doc ID 0065 Rev 1 2/8