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PXT2907A贴片三极管 SOT-89三极管封装PXT2907A参数

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2024年4月14日发(作者:蓝鸿畴)

南京南山半导体有限公司 — 长电贴片三极管选型资料

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

=

=

SOT-89-3L

PXT2907A

TRANSISTOR (PNP)

=

=

=

FEATURES

=

z Switching and Linear Amplification

=

z High Current and Low Voltage

=

=

z Complement to PXT2222A

=

=

MARKING:p2F

=

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

a

1. BASE

2. COLLECTOR

3. EMITTER

Symbol Parameter Value Unit

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θJA

T

j

T

stg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

-60

-60

-5

-600

500

250

150

-55~+150

V

V

V

mA

mW

℃/W

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

V

(BR)CBO

V

(BR)CEO

Test conditions Min Typ Max Unit

I

C

=-1mA,I

E

0 -60 V

I

C

=-10mA,I

B

0 -60 V

V

(BR)EBO

I

CBO

I

EBO

I

E

=-1mA,I

C

0 -5 V

V

CB

=-50V,I

E

0 -0.01µA

V

EB

=-5V,I

C

0 -0.01µA

V

CE

=-10V, I

C

-0.1mA 75

V

CE

=-10V, I

C

-1mA 100

DC current gain

h

FE

V

CE

=-10V, I

C

-10mA 100

V

CE

=-10V, I

C

-150mA 100 300

V

CE

=-10V, I

C

-500mA 50

Collector-emitter saturation voltage

V

CE(sat)

I

C

=-500mA,I

B

=-50mA

-1.6 V

-0.4 V I

C

=-150mA,I

B

-15mA

Base-emitter saturation voltage

Delay time

Rise time

Storage time

Fall time

Transition frequency

V

BE(sat)

I

C

=-500mA,I

B

=-50mA

-2.6 V

-1.3 V I

C

=-150mA,I

B

-15mA

12 ns

t

d

V

CC

=-30V, I

C

=-150mA,

30 ns

t

r

I

B1

=- I

B2

=-15mA

300 ns

t

s

65 ns

t

f

f

T

V

CE

=-10V,I

C

=-20mA, f=100MHz 200 MHz

A,Nov,2010

南京南山半导体有限公司 — 长电三极管选型资料

Symbol

A

b

b1

c

D

D1

E

E1

e

e1

L

Dimensions In Millimeters

.

1.4001.600

0.3200.520

0.4000.580

0.3500.440

4.4004.600

1.550 REF.

2.3002.600

3.9404.250

1.500 TYP.

3.000 TYP.

0.9001.200

Dimensions In Inches

.

0.0550.063

0.0130.020

0.0160.023

0.0140.017

0.1730.181

0.061 REF.

0.0910.102

0.1550.167

0.060 TYP.

0.118 TYP.

0.0350.047

2024年4月14日发(作者:蓝鸿畴)

南京南山半导体有限公司 — 长电贴片三极管选型资料

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

=

=

SOT-89-3L

PXT2907A

TRANSISTOR (PNP)

=

=

=

FEATURES

=

z Switching and Linear Amplification

=

z High Current and Low Voltage

=

=

z Complement to PXT2222A

=

=

MARKING:p2F

=

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

a

1. BASE

2. COLLECTOR

3. EMITTER

Symbol Parameter Value Unit

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θJA

T

j

T

stg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

-60

-60

-5

-600

500

250

150

-55~+150

V

V

V

mA

mW

℃/W

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

V

(BR)CBO

V

(BR)CEO

Test conditions Min Typ Max Unit

I

C

=-1mA,I

E

0 -60 V

I

C

=-10mA,I

B

0 -60 V

V

(BR)EBO

I

CBO

I

EBO

I

E

=-1mA,I

C

0 -5 V

V

CB

=-50V,I

E

0 -0.01µA

V

EB

=-5V,I

C

0 -0.01µA

V

CE

=-10V, I

C

-0.1mA 75

V

CE

=-10V, I

C

-1mA 100

DC current gain

h

FE

V

CE

=-10V, I

C

-10mA 100

V

CE

=-10V, I

C

-150mA 100 300

V

CE

=-10V, I

C

-500mA 50

Collector-emitter saturation voltage

V

CE(sat)

I

C

=-500mA,I

B

=-50mA

-1.6 V

-0.4 V I

C

=-150mA,I

B

-15mA

Base-emitter saturation voltage

Delay time

Rise time

Storage time

Fall time

Transition frequency

V

BE(sat)

I

C

=-500mA,I

B

=-50mA

-2.6 V

-1.3 V I

C

=-150mA,I

B

-15mA

12 ns

t

d

V

CC

=-30V, I

C

=-150mA,

30 ns

t

r

I

B1

=- I

B2

=-15mA

300 ns

t

s

65 ns

t

f

f

T

V

CE

=-10V,I

C

=-20mA, f=100MHz 200 MHz

A,Nov,2010

南京南山半导体有限公司 — 长电三极管选型资料

Symbol

A

b

b1

c

D

D1

E

E1

e

e1

L

Dimensions In Millimeters

.

1.4001.600

0.3200.520

0.4000.580

0.3500.440

4.4004.600

1.550 REF.

2.3002.600

3.9404.250

1.500 TYP.

3.000 TYP.

0.9001.200

Dimensions In Inches

.

0.0550.063

0.0130.020

0.0160.023

0.0140.017

0.1730.181

0.061 REF.

0.0910.102

0.1550.167

0.060 TYP.

0.118 TYP.

0.0350.047

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