2024年4月24日发(作者：孝嘉懿)
【
南京南山半导体有限公司 — 长电贴片三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SO
T-23
1. BASE
2. EMITTER
3. COLLECTOR
BC817-16 BC817-25
BC817-40
TRANSISTOR (NPN)
z
z
z
z
z
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807 (PNP)
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
50
45
5
0.5
0.3
150
-55-150
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collecter capactiance
Transition frequency
Symbol
V
CBO
V
CEO
Test conditions Min Typ
Max Unit
V
V
V
0.1
μA
μA
=I
C
= 10μA, I
E
0 50
=I
C
= 10mA, I
B
0 45
V
CB
== 45 V ,I
E
0
10
V
EBO
=I
E
= 1μA, I
C
0 5
I
CBO
I
EBO
=V
EB
= 4V, I
C
0 0.1
h
FE(1)
h
FE(2)
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 500mA
100
40
100
600
V
CE
(sat)
I
C
= 500mA, I
B
= 50mA
V
BE
(sat)
I
C
= 500mA, I
B
= 50mA
V
BE
C
ob
f
T
V
CE
= 1 V, I
C
= 500mA
V
CB
=10V ,f=1MHz
V
CE
= 5 V, I
C
= 10mA
f=100MHz
0.7 V
1.2 V
1.2 V
pF
MHz
CLASSIFICATION OF
h
FE
(1)
Rank BC817-16 BC817-25 BC817-40
Range 100-250
Marking 6A
160-400 250-600
6B 6C
B,May,2013
Typical Characteristics
BC817
Static Characteristic
280
1mA
)
COMMON
A
m
0.9mA
EMITTER
(
240
T
a
=25
℃
C
0.8mA
I
T
200
0.7mA
N
E
R
R
160
0.6mA
U
C
R
0.5mA
O
T
120
C
0.4mA
E
L
L
0.3mA
O
C
80
0.2mA
40
I
B
=0.1mA
0
6
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
1.2
BEsat
——
I
C
β=10
N
O
1.0
I
T
)
A
V
R
(
U
t
T
a
s
A
E
B
0.8
S
V
T
R
a
=25
℃
E
T
E
T
G
I
M
A
T
E
L
0.6
-
E
O
S
V
T
a
=100
℃
A
B
0.4
0.2
0.1110100
500
COLLECTOR CURRENT I
C
(mA)
I
C
—— V
BE
500
A
)
m
100
(
C
I
T
N
E
o
R
R
10
T
a
=100 C
U
C
R
O
T
T
a
=25
℃
C
E
L
L
O
1
C
V
CE
=1V
0.1
0.30.40.50.60.70.80.91.0
BASE-EMITTER VOLTAGE V
BE
(V)
f
300
T
——
I
C
)
z
H
M
(
T
f
100
Y
C
N
E
U
Q
E
R
F
N
O
I
T
I
S
N
A
R
T
V
CE
=5V
T
o
a
=25 C
10
110
60
COLLECTOR CURRENT I
C
(mA)
h
500
FE
——
I
C
400
T
a
=100
o
C
E
F
h
N
I
300
A
G
T
T
o
a
=25 C
N
E
R
R
U
C
200
C
D
V
CE
= 1V
100
110100
500
COLLECTOR CURRENT I
C
(mA)
V
CEsat
—— I
C
0.4
N
β=10
O
I
T
A
R
U
)
T
V
(
A
0.3
S
t
a
s
R
E
C
E
V
T
T
I
M
E
E
G
-
A
0.2
R
T
O
L
T
O
C
V
E
L
L
O
C
0.1
T
a
=100
℃
T
a
=25
℃
0.0
0.1110100
500
COLLECTOR CURRENT I
C
(mA)
C
ob
/ C
ib
——
V V
100
CB
/
EB
f=1MHz
50
I
E
=0 / I
C
=0
T
o
)
a
=25 C
F
p
(
C
C
ib
E
C
N
A
10
T
I
C
A
P
A
C
C
ob
1
0510
REVERSE VOLTAGE V (V)
0.4
P
c
—— T
a
N
O
I
T
A
P
I
S
0.3
S
I
D
)
R
W
(
E
W
c
O
P
P
R
0.2
O
T
C
E
L
L
O
C
0.1
0.0
5150
AMBIENT TEMPERATURE T
a
(
℃
)
B,May,2013
2024年4月24日发(作者：孝嘉懿)
【
南京南山半导体有限公司 — 长电贴片三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SO
T-23
1. BASE
2. EMITTER
3. COLLECTOR
BC817-16 BC817-25
BC817-40
TRANSISTOR (NPN)
z
z
z
z
z
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807 (PNP)
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
50
45
5
0.5
0.3
150
-55-150
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collecter capactiance
Transition frequency
Symbol
V
CBO
V
CEO
Test conditions Min Typ
Max Unit
V
V
V
0.1
μA
μA
=I
C
= 10μA, I
E
0 50
=I
C
= 10mA, I
B
0 45
V
CB
== 45 V ,I
E
0
10
V
EBO
=I
E
= 1μA, I
C
0 5
I
CBO
I
EBO
=V
EB
= 4V, I
C
0 0.1
h
FE(1)
h
FE(2)
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 500mA
100
40
100
600
V
CE
(sat)
I
C
= 500mA, I
B
= 50mA
V
BE
(sat)
I
C
= 500mA, I
B
= 50mA
V
BE
C
ob
f
T
V
CE
= 1 V, I
C
= 500mA
V
CB
=10V ,f=1MHz
V
CE
= 5 V, I
C
= 10mA
f=100MHz
0.7 V
1.2 V
1.2 V
pF
MHz
CLASSIFICATION OF
h
FE
(1)
Rank BC817-16 BC817-25 BC817-40
Range 100-250
Marking 6A
160-400 250-600
6B 6C
B,May,2013
Typical Characteristics
BC817
Static Characteristic
280
1mA
)
COMMON
A
m
0.9mA
EMITTER
(
240
T
a
=25
℃
C
0.8mA
I
T
200
0.7mA
N
E
R
R
160
0.6mA
U
C
R
0.5mA
O
T
120
C
0.4mA
E
L
L
0.3mA
O
C
80
0.2mA
40
I
B
=0.1mA
0
6
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
1.2
BEsat
——
I
C
β=10
N
O
1.0
I
T
)
A
V
R
(
U
t
T
a
s
A
E
B
0.8
S
V
T
R
a
=25
℃
E
T
E
T
G
I
M
A
T
E
L
0.6
-
E
O
S
V
T
a
=100
℃
A
B
0.4
0.2
0.1110100
500
COLLECTOR CURRENT I
C
(mA)
I
C
—— V
BE
500
A
)
m
100
(
C
I
T
N
E
o
R
R
10
T
a
=100 C
U
C
R
O
T
T
a
=25
℃
C
E
L
L
O
1
C
V
CE
=1V
0.1
0.30.40.50.60.70.80.91.0
BASE-EMITTER VOLTAGE V
BE
(V)
f
300
T
——
I
C
)
z
H
M
(
T
f
100
Y
C
N
E
U
Q
E
R
F
N
O
I
T
I
S
N
A
R
T
V
CE
=5V
T
o
a
=25 C
10
110
60
COLLECTOR CURRENT I
C
(mA)
h
500
FE
——
I
C
400
T
a
=100
o
C
E
F
h
N
I
300
A
G
T
T
o
a
=25 C
N
E
R
R
U
C
200
C
D
V
CE
= 1V
100
110100
500
COLLECTOR CURRENT I
C
(mA)
V
CEsat
—— I
C
0.4
N
β=10
O
I
T
A
R
U
)
T
V
(
A
0.3
S
t
a
s
R
E
C
E
V
T
T
I
M
E
E
G
-
A
0.2
R
T
O
L
T
O
C
V
E
L
L
O
C
0.1
T
a
=100
℃
T
a
=25
℃
0.0
0.1110100
500
COLLECTOR CURRENT I
C
(mA)
C
ob
/ C
ib
——
V V
100
CB
/
EB
f=1MHz
50
I
E
=0 / I
C
=0
T
o
)
a
=25 C
F
p
(
C
C
ib
E
C
N
A
10
T
I
C
A
P
A
C
C
ob
1
0510
REVERSE VOLTAGE V (V)
0.4
P
c
—— T
a
N
O
I
T
A
P
I
S
0.3
S
I
D
)
R
W
(
E
W
c
O
P
P
R
0.2
O
T
C
E
L
L
O
C
0.1
0.0
5150
AMBIENT TEMPERATURE T
a
(
℃
)
B,May,2013