2024年5月5日发(作者：茆新儿)
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
= 50A, T
C
=100°C
t
SC
5µs, T
J(max)
= 175°C
V
CE(ON)
typ. = 1.65V @ I
C
= 35A
C
C
C
G
E
n-channel
Applications
Welding
H Bridge Converters
E
C
G
IRGP6650DPbF
TO‐247AC
E
G
C
IRGP6650D‐EPbF
TO‐247AD
G C E
Gate Collector Emitter
Features
Low V
CE(ON)
and Switching Losses
Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit
Positive V
CE (ON)
Temperature Co-efficient
Lead-free, RoHS compliant
Base part number Package Type
IRGP6650DPbF TO-247AC
IRGP6650D-EPbF TO-247AD
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
FRM
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Standard Pack Orderable Part Number
Form Quantity
Tube 25 IRGP6650DPbF
Tube 25 IRGP6650D-EPbF
Parameter Max. Units
Collector-to-Emitter Voltage 600 V
Continuous Collector Current 80
Continuous Collector Current 50
Pulse Collector Current, V
GE
= 15V 105
Clamped Inductive Load Current, V
GE
= 20V 140
A
Diode Repetitive Peak Forward Current 25
Diode Maximum Forward Current 140
Continuous Gate-to-Emitter Voltage ±20
V
Maximum Power Dissipation 306
W
Maximum Power Dissipation 153
Operating Junction and -40 to +175
Storage Temperature Range
°C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Min. Typ. Max. Units
Parameter
––– ––– 0.49
R
JC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
––– ––– 3.35
R
JC
(Diode)
Thermal Resistance Junction-to-Case-(each Diode)
°C/W
––– 0.24 –––
Thermal Resistance, Case-to-Sink (flat, greased surface)
R
CS
Thermal Resistance, Junction-to-Ambient (typical socket mount)
––– ––– 40
R
JA
1 © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 100µA
— 0.45 — V/°C V
GE
= 0V, I
C
= 1.0mA (25°C-175°C)
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
— 1.65 1.95 I
C
= 35A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage
— 2.05 —
V
I
C
= 35A, V
GE
= 15V, T
J
= 150°C
— 2.10 — I
C
= 35A, V
GE
= 15V, T
J
= 175°C
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 1.0mA
V
GE(th)
— -18 — mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C-175°C)
V
GE(th)
/T
J
Threshold Voltage Temperature Coeff.
gfe Forward Transconductance — 22 — S V
CE
= 50V, I
C
= 35A, PW = 20µs
— 1.0 50 V
= 0V, V
CE
= 600V
I
CES
Collector-to-Emitter Leakage Current
µA
GE
— 600 — V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
— — ±100 nA V
GE
= ±20V
I
GES
Gate-to-Emitter Leakage Current
— 1.80 2.80 I
F
= 8A
Diode Forward Voltage Drop V V
F
— 1.30 — I
F
= 8A, T
J
= 175°C
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, Rg = 10L=210
µ
H.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
Parameter Min. Typ. Max Units Conditions
Total Gate Charge (turn-on) — 75 — I
C
= 35A
Gate-to-Emitter Charge (turn-on) — 20 —
nC
V
GE
= 15V
V
CC
= 400V
Gate-to-Collector Charge (turn-on) — 30 —
Turn-On Switching Loss — 300 —
µJ
I
C
= 35A, V
CC
= 400V, V
GE
=15V
Turn-Off Switching Loss — 630 —
Total Switching Loss — 930 —
R
G
= 10, L=210µH, T
J
= 25°C
Turn-On delay time — 40 —
Energy losses include tail & diode
Rise time — 30 —
ns
reverse recovery
Turn-Off delay time — 105 —
Fall time — 20 —
Turn-On Switching Loss — 640 —
µJ
I
C
= 35A, V
CC
= 400V, V
GE
=15V
Turn-Off Switching Loss — 930 —
Total Switching Loss — 1570 —
R
G
= 10, L=210µH, T
J
= 175°C
Turn-On delay time — 40 —
Energy losses include tail & diode
Rise time — 30 —
ns
reverse recovery
Turn-Off delay time — 120 —
Fall time — 60 —
Input Capacitance — 2220 — V
GE
= 0V
pF V
CC
= 30V
Output Capacitance — 130 —
f = 1.0MHz
Reverse Transfer Capacitance — 65 —
T
J
= 175°C, I
C
= 140A
FULL SQUARE V
CC
= 480V, Vp ≤ 600V
Reverse Bias Safe Operating Area
V
GE
= +20V to 0V
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
5
—
—
—
—
165
50
14
—
—
—
—
T
J
= 150°C,V
CC
= 400V, Vp ≤ 600V
µs
V
= +15V to 0V
GE
µJ
ns
A
T
J
= 175°C
V
CC
= 400V, I
F
= 8A, V
GE
= 15V
Rg = 22L=1.0mH, Ls=150nH
2 © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
2024年5月5日发(作者：茆新儿)
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
= 50A, T
C
=100°C
t
SC
5µs, T
J(max)
= 175°C
V
CE(ON)
typ. = 1.65V @ I
C
= 35A
C
C
C
G
E
n-channel
Applications
Welding
H Bridge Converters
E
C
G
IRGP6650DPbF
TO‐247AC
E
G
C
IRGP6650D‐EPbF
TO‐247AD
G C E
Gate Collector Emitter
Features
Low V
CE(ON)
and Switching Losses
Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit
Positive V
CE (ON)
Temperature Co-efficient
Lead-free, RoHS compliant
Base part number Package Type
IRGP6650DPbF TO-247AC
IRGP6650D-EPbF TO-247AD
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
FRM
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Standard Pack Orderable Part Number
Form Quantity
Tube 25 IRGP6650DPbF
Tube 25 IRGP6650D-EPbF
Parameter Max. Units
Collector-to-Emitter Voltage 600 V
Continuous Collector Current 80
Continuous Collector Current 50
Pulse Collector Current, V
GE
= 15V 105
Clamped Inductive Load Current, V
GE
= 20V 140
A
Diode Repetitive Peak Forward Current 25
Diode Maximum Forward Current 140
Continuous Gate-to-Emitter Voltage ±20
V
Maximum Power Dissipation 306
W
Maximum Power Dissipation 153
Operating Junction and -40 to +175
Storage Temperature Range
°C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Min. Typ. Max. Units
Parameter
––– ––– 0.49
R
JC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
––– ––– 3.35
R
JC
(Diode)
Thermal Resistance Junction-to-Case-(each Diode)
°C/W
––– 0.24 –––
Thermal Resistance, Case-to-Sink (flat, greased surface)
R
CS
Thermal Resistance, Junction-to-Ambient (typical socket mount)
––– ––– 40
R
JA
1 © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 100µA
— 0.45 — V/°C V
GE
= 0V, I
C
= 1.0mA (25°C-175°C)
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
— 1.65 1.95 I
C
= 35A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage
— 2.05 —
V
I
C
= 35A, V
GE
= 15V, T
J
= 150°C
— 2.10 — I
C
= 35A, V
GE
= 15V, T
J
= 175°C
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 1.0mA
V
GE(th)
— -18 — mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C-175°C)
V
GE(th)
/T
J
Threshold Voltage Temperature Coeff.
gfe Forward Transconductance — 22 — S V
CE
= 50V, I
C
= 35A, PW = 20µs
— 1.0 50 V
= 0V, V
CE
= 600V
I
CES
Collector-to-Emitter Leakage Current
µA
GE
— 600 — V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
— — ±100 nA V
GE
= ±20V
I
GES
Gate-to-Emitter Leakage Current
— 1.80 2.80 I
F
= 8A
Diode Forward Voltage Drop V V
F
— 1.30 — I
F
= 8A, T
J
= 175°C
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, Rg = 10L=210
µ
H.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
Parameter Min. Typ. Max Units Conditions
Total Gate Charge (turn-on) — 75 — I
C
= 35A
Gate-to-Emitter Charge (turn-on) — 20 —
nC
V
GE
= 15V
V
CC
= 400V
Gate-to-Collector Charge (turn-on) — 30 —
Turn-On Switching Loss — 300 —
µJ
I
C
= 35A, V
CC
= 400V, V
GE
=15V
Turn-Off Switching Loss — 630 —
Total Switching Loss — 930 —
R
G
= 10, L=210µH, T
J
= 25°C
Turn-On delay time — 40 —
Energy losses include tail & diode
Rise time — 30 —
ns
reverse recovery
Turn-Off delay time — 105 —
Fall time — 20 —
Turn-On Switching Loss — 640 —
µJ
I
C
= 35A, V
CC
= 400V, V
GE
=15V
Turn-Off Switching Loss — 930 —
Total Switching Loss — 1570 —
R
G
= 10, L=210µH, T
J
= 175°C
Turn-On delay time — 40 —
Energy losses include tail & diode
Rise time — 30 —
ns
reverse recovery
Turn-Off delay time — 120 —
Fall time — 60 —
Input Capacitance — 2220 — V
GE
= 0V
pF V
CC
= 30V
Output Capacitance — 130 —
f = 1.0MHz
Reverse Transfer Capacitance — 65 —
T
J
= 175°C, I
C
= 140A
FULL SQUARE V
CC
= 480V, Vp ≤ 600V
Reverse Bias Safe Operating Area
V
GE
= +20V to 0V
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
5
—
—
—
—
165
50
14
—
—
—
—
T
J
= 150°C,V
CC
= 400V, Vp ≤ 600V
µs
V
= +15V to 0V
GE
µJ
ns
A
T
J
= 175°C
V
CC
= 400V, I
F
= 8A, V
GE
= 15V
Rg = 22L=1.0mH, Ls=150nH
2 © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014