2024年5月27日发(作者：戏雪晴)
查询CMPT3904供应商
CMPT3904 NPN
CMPT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRALSEMICONDUCTOR CMPT3904,
CMPT3906 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose amplifier and switching applications.
MARKING CODES:
CMPT3904: C1A
CMPT3906: C2A
SOT-23 CASE
MAXIMUM RATINGS: (T
A
=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
,T
stg
Θ
JA
CMPT3904
60
40
6.0
200
350
-65 to +150
357
CMPT3906
40
40
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICALCHARACTERISTICS: (T
A
=25°Cunless otherwise noted)
CMPT3904
SYMBOLTEST CONDITIONSMINMAX
I
CEV
V
CE
=30V, V
EB
=3.0V50
I
BL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
VB
E(SAT)
h
FE
h
FE
h
FE
h
FE
h
FE
V
CE
=30V, V
EB
=3.0V
I
C
=10µA
I
C
=1.0mA
I
E
=10µA
I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5.0mA
I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5.0mA
V
CE
=1.0V, I
C
=0.1mA
V
CE
=1.0V, I
C
=1.0mA
V
CE
=1.0V, I
C
=10mA
V
CE
=1.0V, I
C
=50mA
V
CE
=1.0V, I
C
=100mA
60
40
6.0
0.20
0.30
0.65
40
70
100
60
30
300
0.85
0.95
50
CMPT3906
MINMAX
50
50
40
40
5.0
0.25
0.40
0.65
60
80
100
60
30
300
0.85
0.95
UNITS
nA
nA
V
V
V
V
V
V
V
R4 (26-September 2002)
Central
TM
CMPT3904 NPN
CMPT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
Semiconductor Corp.
ELECTRICALCHARACTERISTICS: (T
A
=25°Cunless otherwise noted)
CMPT3904
SYMBOLTEST CONDITIONSMINMAX
UNITS
f
T
V
CE
=20V, I
C
=10mA, f=100MHz300
C
ob
C
ib
h
ie
h
re
h
fe
h
oe
NF
t
d
t
r
t
s
t
f
V
CB
=5.0V, I
E
=0, f=1.0MHz
V
BE
=0.5V, I
C
=0, f=1.0MHz
V
CE
=10V, I
C
=1.0mA, f=1.0kHz
V
CE
=10V, I
C
=1.0mA, f=1.0kHz
V
CE
=10V, I
C
=1.0mA, f=1.0kHz
V
CE
=10V, I
C
=1.0mA, f=1.0kHz
V
CE
=5.0V, I
C
=100µA, R
S
=1.0kΩ
f=10Hz to 15.7kHz
V
CC
=3.0V, V
BE
=0.5, I
C
=10mA, I
B1
=1.0mA
V
CC
=3.0V, V
BE
=0.5, I
C
=10mA, I
B1
=1.0mA
V
CC
=3.0V, I
C
=10mA, I
B1
=I
B2
=1.0mA
V
CC
=3.0V, I
C
=10mA, I
B1
=I
B2
=1.0mA
1.0
0.5
100
1.0
4.0
8.0
10
8.0
400
40
5.0
35
35
200
50
CMPT3906
MINMAX
250
4.5
10
2.0
0.1
100
3.0
12
10
400
60
4.0
35
35
225
75
µmhos
dB
ns
ns
ns
ns
MHz
pF
pF
kΩ
x10
-4
SOT-23 CASE - MECHANICALOUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES:
CMPT3904: C1A
CMPT3906: C2A
R4 (26-September 2002)
2024年5月27日发(作者：戏雪晴)
查询CMPT3904供应商
CMPT3904 NPN
CMPT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRALSEMICONDUCTOR CMPT3904,
CMPT3906 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose amplifier and switching applications.
MARKING CODES:
CMPT3904: C1A
CMPT3906: C2A
SOT-23 CASE
MAXIMUM RATINGS: (T
A
=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
,T
stg
Θ
JA
CMPT3904
60
40
6.0
200
350
-65 to +150
357
CMPT3906
40
40
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICALCHARACTERISTICS: (T
A
=25°Cunless otherwise noted)
CMPT3904
SYMBOLTEST CONDITIONSMINMAX
I
CEV
V
CE
=30V, V
EB
=3.0V50
I
BL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
VB
E(SAT)
h
FE
h
FE
h
FE
h
FE
h
FE
V
CE
=30V, V
EB
=3.0V
I
C
=10µA
I
C
=1.0mA
I
E
=10µA
I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5.0mA
I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5.0mA
V
CE
=1.0V, I
C
=0.1mA
V
CE
=1.0V, I
C
=1.0mA
V
CE
=1.0V, I
C
=10mA
V
CE
=1.0V, I
C
=50mA
V
CE
=1.0V, I
C
=100mA
60
40
6.0
0.20
0.30
0.65
40
70
100
60
30
300
0.85
0.95
50
CMPT3906
MINMAX
50
50
40
40
5.0
0.25
0.40
0.65
60
80
100
60
30
300
0.85
0.95
UNITS
nA
nA
V
V
V
V
V
V
V
R4 (26-September 2002)
Central
TM
CMPT3904 NPN
CMPT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
Semiconductor Corp.
ELECTRICALCHARACTERISTICS: (T
A
=25°Cunless otherwise noted)
CMPT3904
SYMBOLTEST CONDITIONSMINMAX
UNITS
f
T
V
CE
=20V, I
C
=10mA, f=100MHz300
C
ob
C
ib
h
ie
h
re
h
fe
h
oe
NF
t
d
t
r
t
s
t
f
V
CB
=5.0V, I
E
=0, f=1.0MHz
V
BE
=0.5V, I
C
=0, f=1.0MHz
V
CE
=10V, I
C
=1.0mA, f=1.0kHz
V
CE
=10V, I
C
=1.0mA, f=1.0kHz
V
CE
=10V, I
C
=1.0mA, f=1.0kHz
V
CE
=10V, I
C
=1.0mA, f=1.0kHz
V
CE
=5.0V, I
C
=100µA, R
S
=1.0kΩ
f=10Hz to 15.7kHz
V
CC
=3.0V, V
BE
=0.5, I
C
=10mA, I
B1
=1.0mA
V
CC
=3.0V, V
BE
=0.5, I
C
=10mA, I
B1
=1.0mA
V
CC
=3.0V, I
C
=10mA, I
B1
=I
B2
=1.0mA
V
CC
=3.0V, I
C
=10mA, I
B1
=I
B2
=1.0mA
1.0
0.5
100
1.0
4.0
8.0
10
8.0
400
40
5.0
35
35
200
50
CMPT3906
MINMAX
250
4.5
10
2.0
0.1
100
3.0
12
10
400
60
4.0
35
35
225
75
µmhos
dB
ns
ns
ns
ns
MHz
pF
pF
kΩ
x10
-4
SOT-23 CASE - MECHANICALOUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES:
CMPT3904: C1A
CMPT3906: C2A
R4 (26-September 2002)