2024年5月30日发(作者：焦静雅)
BAS70
Low capacitance, low series inductance and resistance Schottky diodes
Features
■
■
■
■
■
■
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
Surface mount device
Low capacitance diode
Low resistance and inductance
BAS70ZFILM
(Single)
SOD-123
BAS70JFILM
(Single)
SOD-323
BAS70KFILM
(Single)
SOD-523
Description
The BAS70 series uses 70 V Schottky barrier
diodes packaged in SOD-123, SOD-323, SOD-
523, SOT-23, SOT-323, SOT-323-6L or SOT-666.
These diodes are specially suited for signal
detection and temperature compensation in RF
applications.
BAS70FILM
(Single)
BAS70-04FILM
(Series)
BAS70-05FILM
(Common cathode)
BAS70-06FILM
(Common anode)
SOT-23
BAS70WFILM
(Single)
BAS70-04WFILM
(Series)
BAS70-05WFILM
(Common cathode)
BAS70-06WFILM
(Common anode)
SOT-323
BAS70-08SFILM
(3 parallel diodes)
Table 1.
Device summary
Symbol
I
F
V
RRM
C
(max)
T
j
(max)
Value
70 mA
70 V
2 pF
150 °C
SOT-323-6L
BAS70-07P6FILM
(2 parallel diodes)
SOT-666
BAS70-09P6FILM
(2 opposite diodes)
Configurations in top view
October 2009Doc ID 12563 Rev 21/14
14
CharacteristicsBAS70
1 Characteristics
Table 2.
Symbol
V
RRM
I
F
I
FSM
T
stg
T
j
T
L
Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Continuous forward current
Surge non repetitive forward currentt
p
= 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
Maximum soldering temperature
Value
70
70
1
- 65 to +150
150
260
Unit
V
mA
A
°C
°C
°C
Table 3.
Symbol
Thermal parameters
Parameter
SOD-123, SOT-23
Value
500
550
600
°C/W
Unit
R
th(j-a)
Junction to ambient
(1)
SOT-323, SOD-323
SOD-523, SOT-666
printed circuit board with recommended pad layout
Table 4.
Symbol
I
R
(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
V
R
= 50 V
V
R
= 70 V
I
F
= 1 mA
.
100
10
410
750
1000
mV
Unit
nA
µA
V
F
(2)
Forward voltage dropT
j
= 25 °CI
F
= 10 mA
I
F
= 15 mA
test: t
p
= 5 ms, δ < 2 %
test: t
p
= 380 µs, δ < 2 %
Table 5.
Symbol
C
R
F
L
S
Dynamic characteristics
Parameter
Diode capacitance
Differential forward
resistance
Series inductance
Test conditions
V
R
= 0 V, F = 1 MHz
I
F
= 10 mA, F = 100 MHz30
1.5
.
2
Unit
pF
Ω
nH
2/14Doc ID 12563 Rev 2
2024年5月30日发(作者：焦静雅)
BAS70
Low capacitance, low series inductance and resistance Schottky diodes
Features
■
■
■
■
■
■
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
Surface mount device
Low capacitance diode
Low resistance and inductance
BAS70ZFILM
(Single)
SOD-123
BAS70JFILM
(Single)
SOD-323
BAS70KFILM
(Single)
SOD-523
Description
The BAS70 series uses 70 V Schottky barrier
diodes packaged in SOD-123, SOD-323, SOD-
523, SOT-23, SOT-323, SOT-323-6L or SOT-666.
These diodes are specially suited for signal
detection and temperature compensation in RF
applications.
BAS70FILM
(Single)
BAS70-04FILM
(Series)
BAS70-05FILM
(Common cathode)
BAS70-06FILM
(Common anode)
SOT-23
BAS70WFILM
(Single)
BAS70-04WFILM
(Series)
BAS70-05WFILM
(Common cathode)
BAS70-06WFILM
(Common anode)
SOT-323
BAS70-08SFILM
(3 parallel diodes)
Table 1.
Device summary
Symbol
I
F
V
RRM
C
(max)
T
j
(max)
Value
70 mA
70 V
2 pF
150 °C
SOT-323-6L
BAS70-07P6FILM
(2 parallel diodes)
SOT-666
BAS70-09P6FILM
(2 opposite diodes)
Configurations in top view
October 2009Doc ID 12563 Rev 21/14
14
CharacteristicsBAS70
1 Characteristics
Table 2.
Symbol
V
RRM
I
F
I
FSM
T
stg
T
j
T
L
Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Continuous forward current
Surge non repetitive forward currentt
p
= 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
Maximum soldering temperature
Value
70
70
1
- 65 to +150
150
260
Unit
V
mA
A
°C
°C
°C
Table 3.
Symbol
Thermal parameters
Parameter
SOD-123, SOT-23
Value
500
550
600
°C/W
Unit
R
th(j-a)
Junction to ambient
(1)
SOT-323, SOD-323
SOD-523, SOT-666
printed circuit board with recommended pad layout
Table 4.
Symbol
I
R
(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
V
R
= 50 V
V
R
= 70 V
I
F
= 1 mA
.
100
10
410
750
1000
mV
Unit
nA
µA
V
F
(2)
Forward voltage dropT
j
= 25 °CI
F
= 10 mA
I
F
= 15 mA
test: t
p
= 5 ms, δ < 2 %
test: t
p
= 380 µs, δ < 2 %
Table 5.
Symbol
C
R
F
L
S
Dynamic characteristics
Parameter
Diode capacitance
Differential forward
resistance
Series inductance
Test conditions
V
R
= 0 V, F = 1 MHz
I
F
= 10 mA, F = 100 MHz30
1.5
.
2
Unit
pF
Ω
nH
2/14Doc ID 12563 Rev 2