2024年5月30日发(作者：伯茗)
第
26
卷 第
3
期 西 安 工 业 学 院 学 报
Vol
1
26
No
1
3
2006
年
6
月
JOURNALOFXI
π
ANINSTITUTEOFTECHNOLOGY
Jun.2006
文章编号
:
1000
2
5714
(
2006
)
03
2
237
2
05
OpticalandMechanicalPropertiesofAlNThinFilmsDepositidby
3
ReactiveMagnetronSputtering
IgorV
.Svadkovski
1
,ZHUChang
2
,
DmitriyA
.Golosov
1
,
SergeyM
.Zavatskiy
1
(
sianStateUniversityofInformaticsandRadioelectronics,6,,Minsk220013,Belarus;
’
anTechnologicalUniversity
)
Abstract:
ThereactivemagnetronsputteringofAlinAr/N
2
mixtureworkinggaseshasbeeninvestiga
2
ncludedthat,atlow
2
pressureoperationofmagnetronsputteringsystemandhighpumping
ratethepractiveindex,
extinctioncoefficientsandhardnessofthedepositedfilmsdependontheN
2
ssible
torepeatedlydepositaluminumnitridethinfilmssoastomaketheirrefractiveindexesremainbetween
2.25and2.4,extinctioncoefficient10
-3
andhardnessover20GPabyreactivemagnetronsputtering
essarynitrogenconcentrationinAr/N
2
workinggasmixturemustbeabove40%.These
filmscanbeusedasopticalcoatingsandprotectivecoatings.
KeyWords:
reactivemagnetromsputtering;depositedfilms;nitrogenconcentration;hardness
CLCnumber:
O484.4
Documentcode:
A
pendonthestoichometryandstructureofthede
2
positedfilm.
Aluminiumnitridefilms,asarule,havebeen
depositedbyusingdifferentmethodsofreactive
hemostperspectivemethods
ofdielecticalthinfilmsformationisreactivemag
2
netronsputtering,becauseitallowstoproduce
compoundfilmswhichhavethefollowingmagne
2
tronsystemadvantages
(
highdepositionrate,low
substratetemperature,simpleequipment,etc
)
.So
bothpropertiesofaluminumnitridethinfilmsand
itsformationprocessinvestigationareveryprom
2
ising.
Introduction
Aluminiumnitrideiscurrentlyconsideredas
thecandidateforagreatvarietyofapplicationsin
microelectronics
[1
2
2]
,corrosionprotectivecoat
2
ings
[3
2
4]
andlarge
2
areaopticalcoatings
[5]
becauseof
itsuniguepropertiessuchaswidebandgap
(
6.2eV
)
,
highrefractiveindex
(
1.9
～
2.1forpolycrystalline
films
)
,highchemicalandthermalstability,high
density
(
3.3g/cm
3
)
,highelectricalresistivity
(
～
10
14
ohm/cm
)
ilmsarealsoem
2
ployedasopticaldevicesintheultravioletspectral
region,acousto
2
opticandsurfaceacousticwave
devices,integratedcircuitpackaging,andsoon.
PracticalapplicationofAlNthinfilmsislim
2
itedbythedifficultyinrepeatingthecharacteris
2
causeoptical,electri
2
calandtribologicalcharacteristicsstronglyallde
2
1
Experimental
Theschemeofexperimentalsetupfordeposi
2
tionofAlNfilmsbyreactivemagnetronsputte
2
uum
3
Receiveddate:2005
2
12
2
27
Biography:vski
(
1965
2
)
,Male,BelarusianStateUniversityofInformaticsandRadioelectronics,AssociateProfessor,En
2
gagedinplasma.
238
西 安 工 业 学 院 学 报 第
26
卷
chamberisequippedwithmagnetronsputtering
system
(
MSS
)
andionsource
(
IS
)
.Themainfea
2
tureofMSSisthatitcandecreaseworkingpres
2
sonisthatitisbestfor
themagneticsystemtoadoptadditionalelec
2
tromagaticcoilandmagneticfieldconfiguration
onthetargetsurface
[6]
.Itgivespossibilityto
workatlowgasflows
(
downto50sccm
)
.
supplyistotallyantiarcsystem.
OpticalcharacteristicofdepositedAlNfilms
(
refractiveindex
n
,extinctioncoefficient
k
)
at
wavelength630nmismeasunedbyellipsimetry
methodbyellipsometerLEF
2
3M
2
1atlightangle
65
°
.Dispersionoftherefractiveindexandextinc
2
tioncoefficientintherangeofwavelength245
～
1650nmhasbeenstudiedbyspectroscopicEllip
2
someterM2000UIatlightangle75
°
.Knoophard
2
nessoffilmshasbeenmeasuredbymicrohardness
erloadis10g
andtimeofloadis10s.
2
Resultsanddiscussion
HowMSSdischargevdtagedependsonac
2
tivegasN
2
flowatsputteringofAltargethas
flowinvacuumchamberwasequalto
q
Ar
=35sccm.
Fig.1
Schemeofexperimentalsetupfordeposition
AlNfilmsbyreactivemagnetronsputteringmethod
Pressureinvacuumchamberwasabout0.06Pa.
Itwasdeterminedthatatlow
2
pressureoperation
ofMSSandhighpumpingrateinpowerstabiliza
2
tionmodethemagnetrondischargevoltagewas
directlydependentonthereactivegasconcentra
2
tioninthevacuumchamber
(
Fig.2
)
.Thehysteresis
effectissometimesabsentinreactivemagnetron
sputteringprocess,whichmakesitpossibleto
controlreactivegasflowbystabilizingdischarge
voltagesoastocontrolthereactivemagnetron
sputteningprocess.
ThehighpurityAltarget
(
99.995%
)
ofdiam
2
eterof160mmandthicknessof8mmhasbeen
successfullysputteredinAr/N
2
ordertocontrolthegasflows,itisnecessaryto
usemassflowcontrollerRRG
2
centra
2
tionofN
2
inAr/N
2
gasmixturevariesfrom0to
40%.Si
(
100
)
,opticalglassBK7,pyroceramand
polishingstainlesssteelallcanbeusedassub
2
atesweresituatedatthedistanceof
8.5
с
dep
2
osition,first,ionclearingofsubstratesisper
2
onsourceonthebaseHall
2
current
uumchamberis
pumpedtothebasepressureof10
-3
Paandthen
Arisfedintomaketheworkingpressurego
downto2.0
×
10
-2
clearing,ionener
2
gyanddischargecurrentinthewholeexperiment
remain3min,700eVand40m
А
,respectively.
Fig.2
MSSdischargevoltageasafunctionofN
2
flowat
depositionofAlNfilmsbyreactivemagnetronsputtering
stabilizationofdischargepowermode
FortheMSSworking,theontputpowperof
thepowersupplyis1.5kworsoandthecurcuit
andpowerneedtooperateinstabilizationmode.
Topreventthearconthetargetsurfacethepower
AlNfilmsaredepositeduptothethicknessof0.2
～
1.2
μ
mattheaveragedepositionrateof0.8nm/s.
Fig.3showsthedependenceofKnoophardnessof
第
3
期
vski,etal:OpticalAndMechanicalPropertiesofAlN
……
239
AlNfilmsdepositedbyreactivemagnetronsput
2
teringonN
2
concentrationinAr/N
2
gasmixture.
Thefilmsaredepositedatthefollowingcondi
2
tions:
U
t
=430V,
P
t
=1.0kW
(
powerstabilizationof
discharge
)
,
p
=0.06Pa,
q
Ar
=35sccm,andthedis
2
tancefromthesubstratetothetargetis10.5cm.
een
foundthatthemaximalhardnessoffilmsiscorre
2
spondingtoorneartostoichiometricalcompositions.
ereisalackof
nitride,therefractiveindexoffilmscanachieve2.5.
However,thesefilmshaveahighextinctioncoef
2
ficientintherangeof0.1
2
1.0
(
seeFig.5
)
.At
wavelengthlessthan300nmtherefractiveindex
rvebehaviorisabsent
fortheAINfilmsneartoorequaltostochiomet
2
ricalcomposition
(
Fig.4c,d,e
)
.Therefractivein
2
dexofthesefilmsdecreaseswiththeincreaseof
ractiveindexofthefilm,near
tostochiometricalcompositionandinthewave
2
lengthrangeof600
2
1600nm,
2
fractiveindexdecreasesalittlewiththeinerease
ehaviorforextinction
tioncoeffi
2
cientdecreaseswiththeincreaseofnitrogenflow.
Fig.3
KnoophardnessofAlNfilmsdepositedby
reactivemagnetronsputteringasafunctionofN
2
concentrationinAr/N
2
gasmixture
Fig.4showstherefractiveindexdispersion
offilmsAlNdepositedbyreactivemagnetron
sputteringatdifferentreactivegasN
2
flow:a
2
10
sccm,b
2
12sccm,c
2
16sccm,d
2
17sccm,e
2
18sccm.
Thefilmsaredepositedunderthefollowingstabi
2
lizationconditions:dischargepower
P
t
=0.9kW
(
I
t
=
2.2A
)
andthedistancebetweensubstrateandtarget=
11cm,Arflow33sccm,
p
=0.06Pa,deposition
time
t
=10min.
a
2
10sccm,b
2
12sccm,c
2
16sccm,d
2
17sccm,e
2
18sccm
Fig.5
Extinctioncoefficientdispersionofaluminum
nitridefilmsdepositedbyreactivemagnetronsputtering
atdifferentreactivegasN
2
Fig.6showshowtherefractiveindesandex
2
tinctioncoefficiontofAINthinfilmsdepositedby
reactivemagnetronsputteringmethoddependon
reactivegasflow
(
N
2
)
at630nmwavelength.
WhenthedepositionofAINfilmsisneartostvi
2
chiometricalcomposition,thenitrogenflowis
morethan20sccm
(
35%
)
.Undersuchcondition,
extinctioncoefficientoffilmssharplydecreases
whennitrogenflowismorethan16.0sccm
(
30%
)
.
a
2
10sccm,b
2
12sccm,c
2
16sccm,d
2
17sccm,e
2
18sccm
Fig.4
RefractiveindexdispersionoffilmsAlN
depositedbyreactivemagnetronsputteringat
differentreactivegasN
2
Thealuminumnitridefilmswithextinctioncoeffi
2
cientdownto10
-3
2
er,thesefilmshadahighlevelofinternalstresses.
Therangeofcriticalfilmthicknessisupto400
～
240
西 安 工 业 学 院 学 报 第
26
卷
thelimit,thefilmwillliftoffaf
2
terinteractionwithair.
tridethinfilmswithrefractiveindexintherange
of2.25
～
2.4,extinctioncoefficientdownto10
-3
rogen
concentrationinAr/N
2
gasmixtureshouldbea
2
bove40%.Thesefilmscanbeusedasopticaland
protectivecoatings.
3
Conclusion
Sobyreactivemagnetronsputteringmethod
itispossibletorepeatedlydepositaluminumni
2
Fig.6
Refractiveindex
References:
[1]
GassmanP,SchmitzG,BoysenJ,tal
stepsinthegrowthofAlNthinfilmsonNiAlupon
thermaldermaldecompositionofammonia[J].JVac
SciTechnolA,1996,14
(
4
)
:813.
[2]
OhuchiFS,nfilmswithcon
2
trolledcrystallographicorientationsandtheirmicro
2
structure[J].JVacSciTechnolA,1987,5
(
1
)
:1.
[3]
TaitWS,Aita,umnitridasacorrosion
protectioncoatingforsteel:theself
2
sealingporouse
2
lectrodemodel[J].SurfaceEngineering,1991,7
(
1
)
:
327.
[4]
delingcorrosionBehaviorofAlu
2
minumNitrid
2
coatedsteelOxygen
2
FreeAgueouspo
2
tassiumchloride[J].Corrosion,1990,46
(
2
)
:115.
[5]
YinZ,HardingGL,lmaterials
technologyforenergyefficiencyandsolarenergy
conversion[C].SPIE,1986,653:248.
[6]
SvadkovskiV,GolosovDA,ZavatskiySM,Charac
2
terisationParametersforunbalancedmadnetronsput
2
teringsystemsforunbalancedmagnetronsputtering
systems[J].Vacuum,2002,68
(
4
)
:283.
磁控溅射法镀制氮化铝薄膜特性研究
斯维德科夫斯基
1
,
朱昌
2
,
格洛索夫
1
,
扎瓦兹基
1
(
1.
白俄罗斯国立无线电信息大学薄膜实验室
,
明斯克
220013;2.
西安工业大学
)
3
摘 要
:
氮化铝薄膜具有高折射率
,
良好的化学稳定性
,
耐磨摩、高电阻等特性在微电子器件
和光学薄膜中有着广泛地应用
.
本文研究了反应式磁控溅射方法利用
Ar/N
2
混合气体镀制氮
化铝薄膜的工艺过程
,
实验表明在高真空和高泵浦速率条件下
,
放电电压直接依赖于反应气体
3
收稿日期
:2005
2
12
2
27
作者简介
:
斯维德科夫斯基
(
1965
2
)
,
男
,
白俄罗斯国立无线电信息大学副教授
,
主要研究方向为等离子体技术
.
第
3
期
vski,etal:OpticalAndMechanicalPropertiesofAlN
……
241
珠浓度
.
薄膜的折射率
,
消光系数和薄膜硬度都依赖于氮气浓度的比例
.
通过工艺研究
,
找到了
氮气在不同浓度下对氮化铝薄膜的折射率
,
消光系数以及薄膜硬度的影响
,
找出了镀制氮化镀
制氮化铝薄膜的最佳工艺参数
.
在
Ar/N
2
工作气体中氮气含量保持在
40%
条件下
,
用反应式
磁控溅射方法
,
可以精确镀制出良好的氮化铝薄膜
,
其中折射率范围在
2.25
～
2.4
之间
,
消光
系数为
10
-3
,
薄膜显微硬度大于
20GPa.
该薄膜可以广泛应用于微电子器件和光电器件上
.
关键词
:
反应式磁控溅射
;
镀膜
;
氮气浓度
;
硬度
中图号
:
O484.4
文献标识码
:
A
(
责任编辑、校对 张立新
)
(
上接第
222
页
)
功能
,
或者控制其他通讯协议接口模块
,
实现信号
识别特征参数的在系统可定制后
,
包括信号识别功
能在内的天幕靶性能可灵活配置能力将大为增强
,
满足当前靶场测试技术网络化发展的需要
,
实现天
幕靶工作过程控制的智能化
.
参考文献
:
[1]
杨雷
,
王铁岭
,
安莹
.
主动式红外光电靶的研究
[J].
现
速度测量方法研究
[J].
光电子激光
,2003,14
(
3
)
:
292.
[3]
王铁岭
,
安莹
.
带弹序立靶精度测试系统
[J].
华北工
学院测试技术学报
,2002,16
(
1
)
:62.
[4]
宋玉贵
,
王铁岭
,
天幕靶抗蚊虫干扰数字滤波器设计
[J].
西安工业学院学报
,1998,18
(
2
)
:130.
[5]
席峰
,
倪晋平
.
一种测速光幕靶的数字滤波电路设计
[J].
西安工业学院学报
,2004,24
(
1
)
:19.
[6]
苏建刚
.
天幕靶测速精度分析
[J].
弹道学报
,1994,20
(
2
)
:47.
代电子技术
,2004,171
(
4
)
:52.
[2]
狄长安
,
王昌明
,
孔德仁
.
基于小波分析的单个天幕靶
SignalRecognizingonSky
2
ScreenBasedonSinglechip
SONGYu
2
gui,WANGTie
2
ling,MAYing
(
SchoolofOptoelectronicEngineering,Xi
’
anTechnologicalUniversity,Xi
’
an710032,China
)
Abstract:
Inordertoincreasetheoutdoorapplicationrobustofsky
2
screenandmeettherequirementsof
networkedmeasurementinprovingground,customizingcapabilityofsignalrecognizingpabilitywereim
2
proved,characteristicsofenvironmentaldisturbanceonskyscreen,signalrecognizingschemeandimple
2
elschemeofsky
2
screensignalrecognitionbased
nciple,keyparameter,circuitschematicandsoft
2
iveexperimentalresultsincludingrecognizingdelaywithin2
μ
s
anddelayconsistencywithin0.1
μ
sindicatethatsuchsolutionisapplicableandfeasible.
KeyWords:
provingground;singlechip;skyscreen;robustness
(
责任编辑、校对 张立新
)
2024年5月30日发(作者：伯茗)
第
26
卷 第
3
期 西 安 工 业 学 院 学 报
Vol
1
26
No
1
3
2006
年
6
月
JOURNALOFXI
π
ANINSTITUTEOFTECHNOLOGY
Jun.2006
文章编号
:
1000
2
5714
(
2006
)
03
2
237
2
05
OpticalandMechanicalPropertiesofAlNThinFilmsDepositidby
3
ReactiveMagnetronSputtering
IgorV
.Svadkovski
1
,ZHUChang
2
,
DmitriyA
.Golosov
1
,
SergeyM
.Zavatskiy
1
(
sianStateUniversityofInformaticsandRadioelectronics,6,,Minsk220013,Belarus;
’
anTechnologicalUniversity
)
Abstract:
ThereactivemagnetronsputteringofAlinAr/N
2
mixtureworkinggaseshasbeeninvestiga
2
ncludedthat,atlow
2
pressureoperationofmagnetronsputteringsystemandhighpumping
ratethepractiveindex,
extinctioncoefficientsandhardnessofthedepositedfilmsdependontheN
2
ssible
torepeatedlydepositaluminumnitridethinfilmssoastomaketheirrefractiveindexesremainbetween
2.25and2.4,extinctioncoefficient10
-3
andhardnessover20GPabyreactivemagnetronsputtering
essarynitrogenconcentrationinAr/N
2
workinggasmixturemustbeabove40%.These
filmscanbeusedasopticalcoatingsandprotectivecoatings.
KeyWords:
reactivemagnetromsputtering;depositedfilms;nitrogenconcentration;hardness
CLCnumber:
O484.4
Documentcode:
A
pendonthestoichometryandstructureofthede
2
positedfilm.
Aluminiumnitridefilms,asarule,havebeen
depositedbyusingdifferentmethodsofreactive
hemostperspectivemethods
ofdielecticalthinfilmsformationisreactivemag
2
netronsputtering,becauseitallowstoproduce
compoundfilmswhichhavethefollowingmagne
2
tronsystemadvantages
(
highdepositionrate,low
substratetemperature,simpleequipment,etc
)
.So
bothpropertiesofaluminumnitridethinfilmsand
itsformationprocessinvestigationareveryprom
2
ising.
Introduction
Aluminiumnitrideiscurrentlyconsideredas
thecandidateforagreatvarietyofapplicationsin
microelectronics
[1
2
2]
,corrosionprotectivecoat
2
ings
[3
2
4]
andlarge
2
areaopticalcoatings
[5]
becauseof
itsuniguepropertiessuchaswidebandgap
(
6.2eV
)
,
highrefractiveindex
(
1.9
～
2.1forpolycrystalline
films
)
,highchemicalandthermalstability,high
density
(
3.3g/cm
3
)
,highelectricalresistivity
(
～
10
14
ohm/cm
)
ilmsarealsoem
2
ployedasopticaldevicesintheultravioletspectral
region,acousto
2
opticandsurfaceacousticwave
devices,integratedcircuitpackaging,andsoon.
PracticalapplicationofAlNthinfilmsislim
2
itedbythedifficultyinrepeatingthecharacteris
2
causeoptical,electri
2
calandtribologicalcharacteristicsstronglyallde
2
1
Experimental
Theschemeofexperimentalsetupfordeposi
2
tionofAlNfilmsbyreactivemagnetronsputte
2
uum
3
Receiveddate:2005
2
12
2
27
Biography:vski
(
1965
2
)
,Male,BelarusianStateUniversityofInformaticsandRadioelectronics,AssociateProfessor,En
2
gagedinplasma.
238
西 安 工 业 学 院 学 报 第
26
卷
chamberisequippedwithmagnetronsputtering
system
(
MSS
)
andionsource
(
IS
)
.Themainfea
2
tureofMSSisthatitcandecreaseworkingpres
2
sonisthatitisbestfor
themagneticsystemtoadoptadditionalelec
2
tromagaticcoilandmagneticfieldconfiguration
onthetargetsurface
[6]
.Itgivespossibilityto
workatlowgasflows
(
downto50sccm
)
.
supplyistotallyantiarcsystem.
OpticalcharacteristicofdepositedAlNfilms
(
refractiveindex
n
,extinctioncoefficient
k
)
at
wavelength630nmismeasunedbyellipsimetry
methodbyellipsometerLEF
2
3M
2
1atlightangle
65
°
.Dispersionoftherefractiveindexandextinc
2
tioncoefficientintherangeofwavelength245
～
1650nmhasbeenstudiedbyspectroscopicEllip
2
someterM2000UIatlightangle75
°
.Knoophard
2
nessoffilmshasbeenmeasuredbymicrohardness
erloadis10g
andtimeofloadis10s.
2
Resultsanddiscussion
HowMSSdischargevdtagedependsonac
2
tivegasN
2
flowatsputteringofAltargethas
flowinvacuumchamberwasequalto
q
Ar
=35sccm.
Fig.1
Schemeofexperimentalsetupfordeposition
AlNfilmsbyreactivemagnetronsputteringmethod
Pressureinvacuumchamberwasabout0.06Pa.
Itwasdeterminedthatatlow
2
pressureoperation
ofMSSandhighpumpingrateinpowerstabiliza
2
tionmodethemagnetrondischargevoltagewas
directlydependentonthereactivegasconcentra
2
tioninthevacuumchamber
(
Fig.2
)
.Thehysteresis
effectissometimesabsentinreactivemagnetron
sputteringprocess,whichmakesitpossibleto
controlreactivegasflowbystabilizingdischarge
voltagesoastocontrolthereactivemagnetron
sputteningprocess.
ThehighpurityAltarget
(
99.995%
)
ofdiam
2
eterof160mmandthicknessof8mmhasbeen
successfullysputteredinAr/N
2
ordertocontrolthegasflows,itisnecessaryto
usemassflowcontrollerRRG
2
centra
2
tionofN
2
inAr/N
2
gasmixturevariesfrom0to
40%.Si
(
100
)
,opticalglassBK7,pyroceramand
polishingstainlesssteelallcanbeusedassub
2
atesweresituatedatthedistanceof
8.5
с
dep
2
osition,first,ionclearingofsubstratesisper
2
onsourceonthebaseHall
2
current
uumchamberis
pumpedtothebasepressureof10
-3
Paandthen
Arisfedintomaketheworkingpressurego
downto2.0
×
10
-2
clearing,ionener
2
gyanddischargecurrentinthewholeexperiment
remain3min,700eVand40m
А
,respectively.
Fig.2
MSSdischargevoltageasafunctionofN
2
flowat
depositionofAlNfilmsbyreactivemagnetronsputtering
stabilizationofdischargepowermode
FortheMSSworking,theontputpowperof
thepowersupplyis1.5kworsoandthecurcuit
andpowerneedtooperateinstabilizationmode.
Topreventthearconthetargetsurfacethepower
AlNfilmsaredepositeduptothethicknessof0.2
～
1.2
μ
mattheaveragedepositionrateof0.8nm/s.
Fig.3showsthedependenceofKnoophardnessof
第
3
期
vski,etal:OpticalAndMechanicalPropertiesofAlN
……
239
AlNfilmsdepositedbyreactivemagnetronsput
2
teringonN
2
concentrationinAr/N
2
gasmixture.
Thefilmsaredepositedatthefollowingcondi
2
tions:
U
t
=430V,
P
t
=1.0kW
(
powerstabilizationof
discharge
)
,
p
=0.06Pa,
q
Ar
=35sccm,andthedis
2
tancefromthesubstratetothetargetis10.5cm.
een
foundthatthemaximalhardnessoffilmsiscorre
2
spondingtoorneartostoichiometricalcompositions.
ereisalackof
nitride,therefractiveindexoffilmscanachieve2.5.
However,thesefilmshaveahighextinctioncoef
2
ficientintherangeof0.1
2
1.0
(
seeFig.5
)
.At
wavelengthlessthan300nmtherefractiveindex
rvebehaviorisabsent
fortheAINfilmsneartoorequaltostochiomet
2
ricalcomposition
(
Fig.4c,d,e
)
.Therefractivein
2
dexofthesefilmsdecreaseswiththeincreaseof
ractiveindexofthefilm,near
tostochiometricalcompositionandinthewave
2
lengthrangeof600
2
1600nm,
2
fractiveindexdecreasesalittlewiththeinerease
ehaviorforextinction
tioncoeffi
2
cientdecreaseswiththeincreaseofnitrogenflow.
Fig.3
KnoophardnessofAlNfilmsdepositedby
reactivemagnetronsputteringasafunctionofN
2
concentrationinAr/N
2
gasmixture
Fig.4showstherefractiveindexdispersion
offilmsAlNdepositedbyreactivemagnetron
sputteringatdifferentreactivegasN
2
flow:a
2
10
sccm,b
2
12sccm,c
2
16sccm,d
2
17sccm,e
2
18sccm.
Thefilmsaredepositedunderthefollowingstabi
2
lizationconditions:dischargepower
P
t
=0.9kW
(
I
t
=
2.2A
)
andthedistancebetweensubstrateandtarget=
11cm,Arflow33sccm,
p
=0.06Pa,deposition
time
t
=10min.
a
2
10sccm,b
2
12sccm,c
2
16sccm,d
2
17sccm,e
2
18sccm
Fig.5
Extinctioncoefficientdispersionofaluminum
nitridefilmsdepositedbyreactivemagnetronsputtering
atdifferentreactivegasN
2
Fig.6showshowtherefractiveindesandex
2
tinctioncoefficiontofAINthinfilmsdepositedby
reactivemagnetronsputteringmethoddependon
reactivegasflow
(
N
2
)
at630nmwavelength.
WhenthedepositionofAINfilmsisneartostvi
2
chiometricalcomposition,thenitrogenflowis
morethan20sccm
(
35%
)
.Undersuchcondition,
extinctioncoefficientoffilmssharplydecreases
whennitrogenflowismorethan16.0sccm
(
30%
)
.
a
2
10sccm,b
2
12sccm,c
2
16sccm,d
2
17sccm,e
2
18sccm
Fig.4
RefractiveindexdispersionoffilmsAlN
depositedbyreactivemagnetronsputteringat
differentreactivegasN
2
Thealuminumnitridefilmswithextinctioncoeffi
2
cientdownto10
-3
2
er,thesefilmshadahighlevelofinternalstresses.
Therangeofcriticalfilmthicknessisupto400
～
240
西 安 工 业 学 院 学 报 第
26
卷
thelimit,thefilmwillliftoffaf
2
terinteractionwithair.
tridethinfilmswithrefractiveindexintherange
of2.25
～
2.4,extinctioncoefficientdownto10
-3
rogen
concentrationinAr/N
2
gasmixtureshouldbea
2
bove40%.Thesefilmscanbeusedasopticaland
protectivecoatings.
3
Conclusion
Sobyreactivemagnetronsputteringmethod
itispossibletorepeatedlydepositaluminumni
2
Fig.6
Refractiveindex
References:
[1]
GassmanP,SchmitzG,BoysenJ,tal
stepsinthegrowthofAlNthinfilmsonNiAlupon
thermaldermaldecompositionofammonia[J].JVac
SciTechnolA,1996,14
(
4
)
:813.
[2]
OhuchiFS,nfilmswithcon
2
trolledcrystallographicorientationsandtheirmicro
2
structure[J].JVacSciTechnolA,1987,5
(
1
)
:1.
[3]
TaitWS,Aita,umnitridasacorrosion
protectioncoatingforsteel:theself
2
sealingporouse
2
lectrodemodel[J].SurfaceEngineering,1991,7
(
1
)
:
327.
[4]
delingcorrosionBehaviorofAlu
2
minumNitrid
2
coatedsteelOxygen
2
FreeAgueouspo
2
tassiumchloride[J].Corrosion,1990,46
(
2
)
:115.
[5]
YinZ,HardingGL,lmaterials
technologyforenergyefficiencyandsolarenergy
conversion[C].SPIE,1986,653:248.
[6]
SvadkovskiV,GolosovDA,ZavatskiySM,Charac
2
terisationParametersforunbalancedmadnetronsput
2
teringsystemsforunbalancedmagnetronsputtering
systems[J].Vacuum,2002,68
(
4
)
:283.
磁控溅射法镀制氮化铝薄膜特性研究
斯维德科夫斯基
1
,
朱昌
2
,
格洛索夫
1
,
扎瓦兹基
1
(
1.
白俄罗斯国立无线电信息大学薄膜实验室
,
明斯克
220013;2.
西安工业大学
)
3
摘 要
:
氮化铝薄膜具有高折射率
,
良好的化学稳定性
,
耐磨摩、高电阻等特性在微电子器件
和光学薄膜中有着广泛地应用
.
本文研究了反应式磁控溅射方法利用
Ar/N
2
混合气体镀制氮
化铝薄膜的工艺过程
,
实验表明在高真空和高泵浦速率条件下
,
放电电压直接依赖于反应气体
3
收稿日期
:2005
2
12
2
27
作者简介
:
斯维德科夫斯基
(
1965
2
)
,
男
,
白俄罗斯国立无线电信息大学副教授
,
主要研究方向为等离子体技术
.
第
3
期
vski,etal:OpticalAndMechanicalPropertiesofAlN
……
241
珠浓度
.
薄膜的折射率
,
消光系数和薄膜硬度都依赖于氮气浓度的比例
.
通过工艺研究
,
找到了
氮气在不同浓度下对氮化铝薄膜的折射率
,
消光系数以及薄膜硬度的影响
,
找出了镀制氮化镀
制氮化铝薄膜的最佳工艺参数
.
在
Ar/N
2
工作气体中氮气含量保持在
40%
条件下
,
用反应式
磁控溅射方法
,
可以精确镀制出良好的氮化铝薄膜
,
其中折射率范围在
2.25
～
2.4
之间
,
消光
系数为
10
-3
,
薄膜显微硬度大于
20GPa.
该薄膜可以广泛应用于微电子器件和光电器件上
.
关键词
:
反应式磁控溅射
;
镀膜
;
氮气浓度
;
硬度
中图号
:
O484.4
文献标识码
:
A
(
责任编辑、校对 张立新
)
(
上接第
222
页
)
功能
,
或者控制其他通讯协议接口模块
,
实现信号
识别特征参数的在系统可定制后
,
包括信号识别功
能在内的天幕靶性能可灵活配置能力将大为增强
,
满足当前靶场测试技术网络化发展的需要
,
实现天
幕靶工作过程控制的智能化
.
参考文献
:
[1]
杨雷
,
王铁岭
,
安莹
.
主动式红外光电靶的研究
[J].
现
速度测量方法研究
[J].
光电子激光
,2003,14
(
3
)
:
292.
[3]
王铁岭
,
安莹
.
带弹序立靶精度测试系统
[J].
华北工
学院测试技术学报
,2002,16
(
1
)
:62.
[4]
宋玉贵
,
王铁岭
,
天幕靶抗蚊虫干扰数字滤波器设计
[J].
西安工业学院学报
,1998,18
(
2
)
:130.
[5]
席峰
,
倪晋平
.
一种测速光幕靶的数字滤波电路设计
[J].
西安工业学院学报
,2004,24
(
1
)
:19.
[6]
苏建刚
.
天幕靶测速精度分析
[J].
弹道学报
,1994,20
(
2
)
:47.
代电子技术
,2004,171
(
4
)
:52.
[2]
狄长安
,
王昌明
,
孔德仁
.
基于小波分析的单个天幕靶
SignalRecognizingonSky
2
ScreenBasedonSinglechip
SONGYu
2
gui,WANGTie
2
ling,MAYing
(
SchoolofOptoelectronicEngineering,Xi
’
anTechnologicalUniversity,Xi
’
an710032,China
)
Abstract:
Inordertoincreasetheoutdoorapplicationrobustofsky
2
screenandmeettherequirementsof
networkedmeasurementinprovingground,customizingcapabilityofsignalrecognizingpabilitywereim
2
proved,characteristicsofenvironmentaldisturbanceonskyscreen,signalrecognizingschemeandimple
2
elschemeofsky
2
screensignalrecognitionbased
nciple,keyparameter,circuitschematicandsoft
2
iveexperimentalresultsincludingrecognizingdelaywithin2
μ
s
anddelayconsistencywithin0.1
μ
sindicatethatsuchsolutionisapplicableandfeasible.
KeyWords:
provingground;singlechip;skyscreen;robustness
(
责任编辑、校对 张立新
)