2024年6月13日发(作者：允辰宇)

查询BF908供应商

DATA SHEET

BF908; BF908R

Dual-gate MOS-FETs

Product specification

Supersedes data of April 1995

File under Discrete Semiconductors, SC07

1996Jul30

Philips SemiconductorsProduct specification

Dual-gate MOS-FETs

FEATURES

•High forward transfer admittance

•Short channel transistor with high forward transfer

admittance to input capacitance ratio

•Low noise gain controlled amplifier up to 1GHz.

APPLICATIONS

•VHF and UHF applications with 12V supply voltage,

such as television tuners and professional

communications equipment.

DESCRIPTION

Depletion type field-effect transistor in a plastic

microminiature SOT143 or SOT143R package. The

transistors are protected against excessive input voltage

surges by integrated back-to-back diodes between gates

and source.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING

PIN

1

2

3

4

SYMBOL

s, b

d

g

2

g

1

source

drain

gate2

gate1

Fig.2

DESCRIPTION

Top view

handbook, halfpage

BF908; BF908R

43

g

2

g

1

d

1

Top view

2

s,b

MAM039

Fig.1Simplified outline (SOT143) and

symbol; BF908.

handbook, halfpage

34

g

2

g

1

d

21

s,b

MAM040

Simplified outline (SOT143R) and

symbol; BF908R.

QUICK REFERENCE DATA

SYMBOL

V

DS

I

D

P

tot

T

j

y

fs



C

ig1-s

C

rs

F

drain current

total power dissipation

operating junction temperature

forward transfer admittance

input capacitance at gate1

reverse transfer capacitance

noise figure

f=1MHz

f=800MHz

PARAMETER

drain-source voltage

CONDITIONS

−

−

−

−

36

2.4

20

−

MIN.

−

−

−

−

43

3.1

30

1.5

.

12

40

200

150

50

4

45

2.5

UNIT

V

mA

mW

°C

mS

pF

pF

dB

1996Jul302

2024年6月13日发(作者：允辰宇)

查询BF908供应商

DATA SHEET

BF908; BF908R

Dual-gate MOS-FETs

Product specification

Supersedes data of April 1995

File under Discrete Semiconductors, SC07

1996Jul30

Philips SemiconductorsProduct specification

Dual-gate MOS-FETs

FEATURES

•High forward transfer admittance

•Short channel transistor with high forward transfer

admittance to input capacitance ratio

•Low noise gain controlled amplifier up to 1GHz.

APPLICATIONS

•VHF and UHF applications with 12V supply voltage,

such as television tuners and professional

communications equipment.

DESCRIPTION

Depletion type field-effect transistor in a plastic

microminiature SOT143 or SOT143R package. The

transistors are protected against excessive input voltage

surges by integrated back-to-back diodes between gates

and source.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING

PIN

1

2

3

4

SYMBOL

s, b

d

g

2

g

1

source

drain

gate2

gate1

Fig.2

DESCRIPTION

Top view

handbook, halfpage

BF908; BF908R

43

g

2

g

1

d

1

Top view

2

s,b

MAM039

Fig.1Simplified outline (SOT143) and

symbol; BF908.

handbook, halfpage

34

g

2

g

1

d

21

s,b

MAM040

Simplified outline (SOT143R) and

symbol; BF908R.

QUICK REFERENCE DATA

SYMBOL

V

DS

I

D

P

tot

T

j

y

fs



C

ig1-s

C

rs

F

drain current

total power dissipation

operating junction temperature

forward transfer admittance

input capacitance at gate1

reverse transfer capacitance

noise figure

f=1MHz

f=800MHz

PARAMETER

drain-source voltage

CONDITIONS

−

−

−

−

36

2.4

20

−

MIN.

−

−

−

−

43

3.1

30

1.5

.

12

40

200

150

50

4

45

2.5

UNIT

V

mA

mW

°C

mS

pF

pF

dB

1996Jul302