2024年6月13日发(作者：佛思云)

FDP75N08A 75V N-Channel MOSFET

FDP75N08A

75V N-Channel MOSFET

Features

•

•

•

•

•

75A, 75V, R

DS(on)

= 0.011Ω @V

GS

= 10 V

Low gate charge ( typical 145nC)

Low Crss ( typical 86pF)

Fast switching

Improved dv/dt capability

UniFET

Description

July 2006

TM

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

D

G

G

D

S

TO-220

FDP Series

S

Absolute Maximum Ratings

Symbol

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt

P

D

T

J

, T

STG

T

L

Drain-Source Voltage

Drain Current

Drain Current

- Continuous (T

C

= 25°C)

- Continuous (T

C

= 100°C)

- Pulsed

(Note 1)

ParameterFDP75N08A

75

75

47

300

± 20

(Note 2)

(Note 1)

(Note 1)

(Note 3)

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T

C

= 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8

2024年6月13日发(作者：佛思云)

FDP75N08A 75V N-Channel MOSFET

FDP75N08A

75V N-Channel MOSFET

Features

•

•

•

•

•

75A, 75V, R

DS(on)

= 0.011Ω @V

GS

= 10 V

Low gate charge ( typical 145nC)

Low Crss ( typical 86pF)

Fast switching

Improved dv/dt capability

UniFET

Description

July 2006

TM

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

D

G

G

D

S

TO-220

FDP Series

S

Absolute Maximum Ratings

Symbol

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt

P

D

T

J

, T

STG

T

L

Drain-Source Voltage

Drain Current

Drain Current

- Continuous (T

C

= 25°C)

- Continuous (T

C

= 100°C)

- Pulsed

(Note 1)

ParameterFDP75N08A

75

75

47

300

± 20

(Note 2)

(Note 1)

(Note 1)

(Note 3)

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T

C

= 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8