2024年7月23日发(作者：代鹏涛)
【
南京南山半导体有限公司 — 长电贴片三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
==
==
==
=
=
=
=
TRANSISTOR (PNP)
=
=
FEATURES
=
Compliment to PXT3904
z
=
=
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
1. BASE
2. COLLECTOR
1
2
3
3. EMITTER
PXT3906
z
z
Low current
=
=
=
MARKING:
2A
=
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
=
Symbol Parameter ValueUnits
Low voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-40
-40
-6
-0.2
0.5
150
-55-150
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
&ROOHFWRU
2024年7月23日发(作者：代鹏涛)
【
南京南山半导体有限公司 — 长电贴片三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
==
==
==
=
=
=
=
TRANSISTOR (PNP)
=
=
FEATURES
=
Compliment to PXT3904
z
=
=
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
1. BASE
2. COLLECTOR
1
2
3
3. EMITTER
PXT3906
z
z
Low current
=
=
=
MARKING:
2A
=
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
=
Symbol Parameter ValueUnits
Low voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-40
-40
-6
-0.2
0.5
150
-55-150
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
&ROOHFWRU