2024年7月31日发(作者：经禹)
QRE1113, QRE1113GR — Minature Reflective Object Sensor
September 2009
QRE1113, QRE1113GR
Minature Reflective Object Sensor
Features
■
Phototransistor output
■
No contact surface sensing
■
Miniature package
■
Lead form style: Gull Wing
■
Two leadform options:Through hole (QRE1113)
SMT gullwing (QRE1113GR)
■
Two packaging options:Tube (QRE1113)
Tape and reel (QRE1113GR)
QRE1113GR Package Dimensions
2.90
2.50
1.00
4
3
0.94
C
L
0.60
0.40
1.80
C
L
3.60
3.20
0.94
12
30°
0.40
1.70
1.50
0.61 Nom.
(4x)
4.80
4.40
1.10
0.90
Notes:
1. Dimensions for all drawings are in millimeters.
2. Tolerance of ±0.15mm on all non-nominal dimensions
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
QRE1113, QRE1113GR — Minature Reflective Object Sensor
QRE1113 Package Dimensions
2.90
2.50
1.00
4
3
0.94
C
L
0.60
0.40
1.80
C
L
3.60
3.20
0.94
12
4.20
3.80
0.40
1.70
1.50
10.4
8.4
0~20°0~20°
Notes:
1. Dimensions for all drawings are in millimeters.
2. Tolerance of ±0.15mm on all non-nominal dimensions
Schematic
1234
Pin 1: Anode
Pin 2: Cathode
Pin 3: Collector
Pin 4: Emitter
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
2
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
EMITTER
I
F
V
R
I
FP
P
D
SENSOR
V
CEO
V
ECO
I
C
P
D
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Peak Forward Current
(5)
Power Dissipation
(1)
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
(1)
Rating
-40 to +85
-40 to +90
240 for 5 sec
260 for 10 sec
50
5
1
75
30
5
20
50
Units
°C
°C
°C
°C
mA
V
A
mW
V
V
mA
mW
Electrical/Optical Characteristics
(T
A
= 25°C unless otherwise specified)
Symbol
V
F
I
R
λ
PE
I
D
COUPLED
I
C(ON)
I
CX
V
CE (SAT)
t
r
t
f
On-State Collector Current
Cross-Talk Collector Current
Saturation Voltage
Rise Time
Fall Time
V
CC
= 5V, I
C(ON)
= 100µA,
R
L
= 1k
Ω
20
20
I
F
= 20mA, V
CE
= 5V
(6)
I
F
= 20mA, V
CE
= 5V
(7)
0.100.40
1
0.3
mA
µA
V
µs
Parameter
Forward Voltage
Reverse Leakage Current
Peak Emission Wavelength
Collector-Emitter Dark Current
Test Conditions
I
F
= 20mA
V
R
= 5V
I
F
= 20mA
I
F
= 0mA, V
CE
= 20V
.
1.2
940
Max.
1.6
10
Units
V
µA
nm
INPUT DIODE
OUTPUT TRANSISTOR
100nA
Notes:
power dissipation linearly 1.00mW/°C above 25°C.
flux is recommended.
ol or isopropyl alcohols are recommended as cleaning agents.
ing iron 1/16" (1.6mm) from housing.
conditions: tp = 100µs; T = 10ms.
6. Measured using an aluminum alloy mirror at d = 1mm.
7. No reflective surface at close proximity.
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
3
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Typical Performance Curves
I
C
(
O
N
)
-
N
O
R
M
A
L
I
Z
E
D
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
1.0
1.0
I
F
= 10 mA
V
CE
= 5 V
T
A
= 25˚C
0.8
I
C
(
O
N
)
-
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
m
A
)
0.8
d
0
0.6
0.6
0.4
Sensing Object:
White Paper (90% reflective)
0.2
Mirror
0.4
0.2
0.0
012345
0.0
d-DISTANCE (mm)
048121620
Fig. 1 Normalized Collector Current vs. Distance
between device and reflector
I
F
- FORWARD CURRENT (mA)
Fig. 2 Collector Current vs. Forward Current
I
C
(
O
N
)
-
N
O
R
M
A
L
I
Z
E
D
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
d = 1 mm, 90% reflection
T
A
= 25˚C
I
C
E
O
-
N
O
R
M
A
L
I
Z
E
D
D
A
R
K
C
U
R
R
E
N
T
2.0
10
2
Normalized to:
V
CE
= 10 V
T
A
= 25˚C
10
1
V
CE
= 10 V
V
CE
= 5 V
I
F
= 25mA
I
F
=20mA
I
F
=15mA
I
F
=10mA
I
F
=5mA
10
0
10
-1
110
10
-2
2540557085
V
CE
- COLLECTOR EMITTER VOLTAGE (V)
T
A
- Ambient Temperature (˚C)
Fig. 3 Normalized Collector Current vs.
Collector to Emitter Voltage
Fig. 4 Collector Emitter Dark Current (Normalized)
vs. Ambient Temperature
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
4
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Typical Performance Curves
(Continued)
50
100
T
A
= 25˚C
40
V
CC
= 10 V
t
pw
= 100 us
T=1ms
T
A
= 25˚C
t
f
10
t
r
I
C
= 0.3 mA
I
F
-
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(
m
A
)
30
20
R
I
S
E
A
N
D
F
A
L
L
T
I
M
E
(
u
s
)
t
f
t
r
I
C
= 1 mA
10
0
1.01.11.21.31.41.5
1
0.1110
V
F
- FORWARD VOLTAGE (V)
R
L
- LOAD RESISTANCE (KΩ)
Fig. 6 Forward Current vs. Forward Voltage
Fig. 7 Rise and Fall Time vs. Load Resistance
3.0
V
F
-
F
O
R
W
A
R
D
V
O
L
T
A
G
E
(
V
)
R
E
L
A
T
I
V
E
R
A
D
I
A
N
T
I
N
T
E
N
S
I
T
Y
2.5
1.0
0.9
0.8
2.0
I
F
= 50 mA
I
F
= 20 mA
1.0
I
F
= 10 mA
1.5
0.5
0.7
0.0
-40-2
0.60.40.200.20.40.6
T
A
- AMBIENT TEMPERATURE (˚C)
ANGULAR DISPLACEMENT
Fig. 8
Forward Voltage vs. Ambient Temperature
Fig. 8 Radiation Diagram
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
5
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Recommended Solder Screen Pattern for GR option (for reference only)
1.1
LED (+)
1.0
0.8
2.8
Dimensions in mm
Taping Dimensions for GR option
Progressive Direction
2.0±0.054.0
ø1.5
0.25
1.75
5.5±0.05
12.0±0.3
4.75
3.73
8.0
1.98
General tolerance ±0.1
Dimensions in mm
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
6
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Reflow Profile
260°C max. for 10 sec. max.
1°C to 5°C/sec
260°C
T
e
m
p
e
r
a
t
u
r
e
(
°
C
)
Pre-heating
180°C to 200°C
1°C to 5°C/sec
220°C
60 sec. max.
above 220°C
120 sec. max.
Time (seconds)
Note: Reflow soldering should not be done more than twice.
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
7
QRE1113, QRE1113GR — Minature Reflective Object Sensor
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Thefollowingincludesregisteredandunregisteredtrademarksandservicemarks,ownedbyFairchildSemiconductorand/oritsglobalsubsidiaries,andisnot
intendedtobeanexhaustivelistofallsuchtrademarks.
Auto-SPM™
BuilditNow™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
CurrentTransferLogic™
EcoSPARK
®
EfficentMax™
EZSWITCH™*
™*
®
Fairchild
®
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FACTQuietSeries™
FACT
®
FAST
®
FastvCore™
FETBench™
FlashWriter
®
*
FPS™
®
F-PFS™
FRFET
®
SM
GlobalPowerResource
GreenFPS™
GreenFPS™e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
®
OPTOPLANAR
®
®
PowerTrench
®
PowerXS™
ProgrammableActiveDroop™
QFET
®
QS™
QuietSeries™
RapidConfigure™
™
Savingourworld,1mW/W/kWatatime™
SmartMax™
SMARTSTART™
SPM
®
STEALTH™
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SuperSOT™-3
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®
*
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®
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TinyPower™
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TinyWire™
TriFaultDetect™
TRUECURRENT™*
µSerDes™
UHC
®
UltraFRFET™
UniFET™
VCX™
VisualMax™
XS™
PDPSPM™
Power-SPM™
*TrademarksofSystemGeneralCorporation,usedunderlicensebyFairchildSemiconductor.
DISCLAIMER
FAIRCHILDSEMICONDUCTORRESERVESTHERIGHTTOMAKECHANGESWITHOUTFURTHERNOTICETOANYPRODUCTSHEREINTOIMPROVE
RELIABILITY,FUNCTION,ILDDOESNOTASSUMEANYLIABILITYARISINGOUTOFTHEAPPLICATIONORUSEOFANYPRODUCTOR
CIRCUITDESCRIBEDHEREIN;NEITHERDOESITCONVEYANYLICENSEUNDERITSPATENTRIGHTS,
SPECIFICATIONSDONOTEXPANDTHETERMSOFFAIRCHILD’SWORLDWIDETERMSANDCONDITIONS,SPECIFICALLYTHEWARRANTYTHEREIN,
WHICHCOVERSTHESEPRODUCTS.
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FAIRCHILD’SPRODUCTSARENOTAUTHORIZEDFORUSEASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSWITHOUTTHE
EXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
Asusedherein:
pportdevicesorsystemsaredevicesorsystemswhich,(a)are
intendedforsurgicalimplantintothebodyor(b)supportorsustainlife,
and(c)whosefailuretoperformwhenproperlyusedinaccordance
withinstructionsforuseprovidedinthelabeling,canbereasonably
expectedtoresultinasignificantinjuryoftheuser.
calcomponentinanycomponentofalifesupport,device,or
systemwhosefailuretoperformcanbereasonablyexpectedto
causethefailureofthelifesupportdeviceorsystem,ortoaffectits
safetyoreffectiveness.
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underSalesSupport.
Cufacturersofsemiconductorproductsareexperiencingcounterfeitingoftheirparts.
Customerswhoinadvertentlypurchasecounterfeitpartsexperiencemanyproblemssuchaslossofbrandreputation,substandardperformance,failedapplications,
ildistakingstrongmeasurestoprotectourselvesandourcustomersfromtheproliferationof
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PRODUCTSTATUSDEFINITIONS
DefinitionofTerms
DatasheetIdentification
AdvanceInformation
Preliminary
NoIdentificationNeeded
Obsolete
ProductStatus
Formative/InDesign
FirstProduction
FullProduction
NotInProduction
Definition
icationsmaychangein
anymannerwithoutnotice.
Datasheetcontainspreliminarydata;ild
Semiconductorreservestherighttomakechangesatanytimewithoutnoticetoimprovedesign.
ildSemiconductorreservestherighttomakechanges
atanytimewithoutnoticetoimprovethedesign.
DatasheetcontainsspecificationsonaproductthatisdiscontinuedbyFairchildSemiconductor.
Thedatasheetisforreferenceinformationonly.
Rev.I40
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
8
2024年7月31日发(作者：经禹)
QRE1113, QRE1113GR — Minature Reflective Object Sensor
September 2009
QRE1113, QRE1113GR
Minature Reflective Object Sensor
Features
■
Phototransistor output
■
No contact surface sensing
■
Miniature package
■
Lead form style: Gull Wing
■
Two leadform options:Through hole (QRE1113)
SMT gullwing (QRE1113GR)
■
Two packaging options:Tube (QRE1113)
Tape and reel (QRE1113GR)
QRE1113GR Package Dimensions
2.90
2.50
1.00
4
3
0.94
C
L
0.60
0.40
1.80
C
L
3.60
3.20
0.94
12
30°
0.40
1.70
1.50
0.61 Nom.
(4x)
4.80
4.40
1.10
0.90
Notes:
1. Dimensions for all drawings are in millimeters.
2. Tolerance of ±0.15mm on all non-nominal dimensions
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
QRE1113, QRE1113GR — Minature Reflective Object Sensor
QRE1113 Package Dimensions
2.90
2.50
1.00
4
3
0.94
C
L
0.60
0.40
1.80
C
L
3.60
3.20
0.94
12
4.20
3.80
0.40
1.70
1.50
10.4
8.4
0~20°0~20°
Notes:
1. Dimensions for all drawings are in millimeters.
2. Tolerance of ±0.15mm on all non-nominal dimensions
Schematic
1234
Pin 1: Anode
Pin 2: Cathode
Pin 3: Collector
Pin 4: Emitter
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
2
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
EMITTER
I
F
V
R
I
FP
P
D
SENSOR
V
CEO
V
ECO
I
C
P
D
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Peak Forward Current
(5)
Power Dissipation
(1)
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
(1)
Rating
-40 to +85
-40 to +90
240 for 5 sec
260 for 10 sec
50
5
1
75
30
5
20
50
Units
°C
°C
°C
°C
mA
V
A
mW
V
V
mA
mW
Electrical/Optical Characteristics
(T
A
= 25°C unless otherwise specified)
Symbol
V
F
I
R
λ
PE
I
D
COUPLED
I
C(ON)
I
CX
V
CE (SAT)
t
r
t
f
On-State Collector Current
Cross-Talk Collector Current
Saturation Voltage
Rise Time
Fall Time
V
CC
= 5V, I
C(ON)
= 100µA,
R
L
= 1k
Ω
20
20
I
F
= 20mA, V
CE
= 5V
(6)
I
F
= 20mA, V
CE
= 5V
(7)
0.100.40
1
0.3
mA
µA
V
µs
Parameter
Forward Voltage
Reverse Leakage Current
Peak Emission Wavelength
Collector-Emitter Dark Current
Test Conditions
I
F
= 20mA
V
R
= 5V
I
F
= 20mA
I
F
= 0mA, V
CE
= 20V
.
1.2
940
Max.
1.6
10
Units
V
µA
nm
INPUT DIODE
OUTPUT TRANSISTOR
100nA
Notes:
power dissipation linearly 1.00mW/°C above 25°C.
flux is recommended.
ol or isopropyl alcohols are recommended as cleaning agents.
ing iron 1/16" (1.6mm) from housing.
conditions: tp = 100µs; T = 10ms.
6. Measured using an aluminum alloy mirror at d = 1mm.
7. No reflective surface at close proximity.
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
3
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Typical Performance Curves
I
C
(
O
N
)
-
N
O
R
M
A
L
I
Z
E
D
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
1.0
1.0
I
F
= 10 mA
V
CE
= 5 V
T
A
= 25˚C
0.8
I
C
(
O
N
)
-
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
m
A
)
0.8
d
0
0.6
0.6
0.4
Sensing Object:
White Paper (90% reflective)
0.2
Mirror
0.4
0.2
0.0
012345
0.0
d-DISTANCE (mm)
048121620
Fig. 1 Normalized Collector Current vs. Distance
between device and reflector
I
F
- FORWARD CURRENT (mA)
Fig. 2 Collector Current vs. Forward Current
I
C
(
O
N
)
-
N
O
R
M
A
L
I
Z
E
D
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
d = 1 mm, 90% reflection
T
A
= 25˚C
I
C
E
O
-
N
O
R
M
A
L
I
Z
E
D
D
A
R
K
C
U
R
R
E
N
T
2.0
10
2
Normalized to:
V
CE
= 10 V
T
A
= 25˚C
10
1
V
CE
= 10 V
V
CE
= 5 V
I
F
= 25mA
I
F
=20mA
I
F
=15mA
I
F
=10mA
I
F
=5mA
10
0
10
-1
110
10
-2
2540557085
V
CE
- COLLECTOR EMITTER VOLTAGE (V)
T
A
- Ambient Temperature (˚C)
Fig. 3 Normalized Collector Current vs.
Collector to Emitter Voltage
Fig. 4 Collector Emitter Dark Current (Normalized)
vs. Ambient Temperature
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
4
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Typical Performance Curves
(Continued)
50
100
T
A
= 25˚C
40
V
CC
= 10 V
t
pw
= 100 us
T=1ms
T
A
= 25˚C
t
f
10
t
r
I
C
= 0.3 mA
I
F
-
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(
m
A
)
30
20
R
I
S
E
A
N
D
F
A
L
L
T
I
M
E
(
u
s
)
t
f
t
r
I
C
= 1 mA
10
0
1.01.11.21.31.41.5
1
0.1110
V
F
- FORWARD VOLTAGE (V)
R
L
- LOAD RESISTANCE (KΩ)
Fig. 6 Forward Current vs. Forward Voltage
Fig. 7 Rise and Fall Time vs. Load Resistance
3.0
V
F
-
F
O
R
W
A
R
D
V
O
L
T
A
G
E
(
V
)
R
E
L
A
T
I
V
E
R
A
D
I
A
N
T
I
N
T
E
N
S
I
T
Y
2.5
1.0
0.9
0.8
2.0
I
F
= 50 mA
I
F
= 20 mA
1.0
I
F
= 10 mA
1.5
0.5
0.7
0.0
-40-2
0.60.40.200.20.40.6
T
A
- AMBIENT TEMPERATURE (˚C)
ANGULAR DISPLACEMENT
Fig. 8
Forward Voltage vs. Ambient Temperature
Fig. 8 Radiation Diagram
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
5
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Recommended Solder Screen Pattern for GR option (for reference only)
1.1
LED (+)
1.0
0.8
2.8
Dimensions in mm
Taping Dimensions for GR option
Progressive Direction
2.0±0.054.0
ø1.5
0.25
1.75
5.5±0.05
12.0±0.3
4.75
3.73
8.0
1.98
General tolerance ±0.1
Dimensions in mm
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
6
QRE1113, QRE1113GR — Minature Reflective Object Sensor
Reflow Profile
260°C max. for 10 sec. max.
1°C to 5°C/sec
260°C
T
e
m
p
e
r
a
t
u
r
e
(
°
C
)
Pre-heating
180°C to 200°C
1°C to 5°C/sec
220°C
60 sec. max.
above 220°C
120 sec. max.
Time (seconds)
Note: Reflow soldering should not be done more than twice.
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
7
QRE1113, QRE1113GR — Minature Reflective Object Sensor
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AdvanceInformation
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ProductStatus
Formative/InDesign
FirstProduction
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NotInProduction
Definition
icationsmaychangein
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Datasheetcontainspreliminarydata;ild
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Rev.I40
©2002 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.6.0
8