2024年8月28日发(作者：御丹红)
Cu-etch-200 UBM
Article 102200-40
Cu etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Area of use
Cu-etch-200 UBM is a slightly alkaline etchant for Cu and is used for the wet-chemical
removal of Cu seed layers with selectivity to metals like Ni, Au, Cr, Sn, Ti, Al. Common
areas of use are for semiconductor fabrication or microsystem technology especially for
the removal of seed layers after the plating of under-bump-metallization (UBM).
Advantages and Requirement Profile
Cu-etch-200 UBM offers selectivity to numerous materials. Cu-etch-200 UBM is available
in different purity grades. Though alkaline, the etching solution is compatible with resist
and can be used at room temperature.
Cu-etch-200 UBM fits to the following requirement profile:
- Selectivity to many materials, e.g. common metals used in electroplating industry
- Very small dimension lost
- Available in different purity grades
- Compatible to resist masking
- Usage at room temperature
Inteded Use
- Usable for manual process, tank or etching equipment
- Use in laboratory or production environment only
- Use for commercial application only
Selectivity
Cu-etch-200 UBM is compatible/etches selective to following materials:
- Resists: common Novolak as masking resist (e.g. AZ
®
Photoresist)
- Metals: no attack on Cr, Au, Pt, Sn, Al, Ni, Ti, Ta
Ag will be slowly attacked, Au will be slowly attacked at elevated temperatures
- Semiconductor materials: Si, SiO2, Si3N4
(further information on request)
Etching rate / capacity
Under normal condition, the etching rate is around 200 to 250nm/min (at RT).
The etching solution stable over time and can be used multiple times depending on the
requirements of application. It is recommended to dispose the solution at the latest, when
the etching rate has changed by 20%.
Page 1/3
Cu-etch-200 UBM
Article 102200-40
Cu etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Order number / Article number/ Shipping form
Cu-etch-200 UBM is shipped ready for use.
As a standard, all compounds used are level „pure“.
Order number: Article number + Container-Code
Cu-etch-200 UBM
Article number
102200-40
1l
D
Container-Code
2,5l 5l 10l
- F G
20l
H
On request:
- Certificate of Analysis with individual requirements regarding elements
- etching solution in other purity grade or special grade regarding specific elements
Mixture
The etching solution is ready for use.
The etching solution is stable in time, it can be used multiple times depending on the
requirements of application. It is recommended to dispose the solution at the latest, when
the etching rate has changed by 20%.
Etching conditions
Temperature:
Tank:
Agitation:
Etching rate:
Pretreatment:
RT (21°C)
Tank for batch process, Petri dish for manual application
medium;
Circulation; stirring rod; autom./ man. agitation of work piece
200 to 250nm per minute (at RT)
where applicable descum / oxygen plasma for improving the wetting
conditions of the resist or metal mask (no wetting agents needed)
Etching result / inspection
The completed removal of the Cu can be identified by visual observation. There should be
no visible residue of Cu, which should be verified by inspection with optical microscope.
General application notes
Pretreatment
Substrates should be pretreated in oxygen plasma, in order to remove any potential
organic residues and to improve the wetting properties of the solution on resist masks. The
surface becomes hydrophilic and no extra wetting agents are required.
Page 2/3
Cu-etch-200 UBM
Article 102200-40
Cu etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Etching process
During the etching process, sufficient agitation of the solution or of the substrate is
needed. If used in manual processing, the etching time required can be identified by
observing a color changeover in the open etching areas. After visual qualification the
etching should be continued for another 10% to 15% of the time elapsed, in order to
assure the removal of any residues.
Post treatment
Thorough cleaning with DI-water / quick dump
Rinsing dryer or manually drying with nitrogen nozzle
Know issues / trouble shooting
Inhomogeneous etching result / incomplete etching
- Poor wetting / no descum or plasma executed
- Etching solution /etching capacity is consumed
- Insufficient agitation
Safety and disposal notes
The mixture is not classified as dangerous according to Regulation (EC) No. 1272/2008.
Refer to the safety and handling recommendations of the material safety datasheet before
use.
Do not empty into drains or the aquatic environment. Collect used or unused solution in
containers and perform waste disposal according to official state regulations.
Cleaned containers may be recycled.
Technical Support
NB Technologies GmbH
Fahrenheitstr. 1, 28259 Bremen
Tel.: + 49 421 2445810 FAX.: + 49 421 22379787
Email:***********************
Web:
Page 3/3
2024年8月28日发(作者：御丹红)
Cu-etch-200 UBM
Article 102200-40
Cu etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Area of use
Cu-etch-200 UBM is a slightly alkaline etchant for Cu and is used for the wet-chemical
removal of Cu seed layers with selectivity to metals like Ni, Au, Cr, Sn, Ti, Al. Common
areas of use are for semiconductor fabrication or microsystem technology especially for
the removal of seed layers after the plating of under-bump-metallization (UBM).
Advantages and Requirement Profile
Cu-etch-200 UBM offers selectivity to numerous materials. Cu-etch-200 UBM is available
in different purity grades. Though alkaline, the etching solution is compatible with resist
and can be used at room temperature.
Cu-etch-200 UBM fits to the following requirement profile:
- Selectivity to many materials, e.g. common metals used in electroplating industry
- Very small dimension lost
- Available in different purity grades
- Compatible to resist masking
- Usage at room temperature
Inteded Use
- Usable for manual process, tank or etching equipment
- Use in laboratory or production environment only
- Use for commercial application only
Selectivity
Cu-etch-200 UBM is compatible/etches selective to following materials:
- Resists: common Novolak as masking resist (e.g. AZ
®
Photoresist)
- Metals: no attack on Cr, Au, Pt, Sn, Al, Ni, Ti, Ta
Ag will be slowly attacked, Au will be slowly attacked at elevated temperatures
- Semiconductor materials: Si, SiO2, Si3N4
(further information on request)
Etching rate / capacity
Under normal condition, the etching rate is around 200 to 250nm/min (at RT).
The etching solution stable over time and can be used multiple times depending on the
requirements of application. It is recommended to dispose the solution at the latest, when
the etching rate has changed by 20%.
Page 1/3
Cu-etch-200 UBM
Article 102200-40
Cu etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Order number / Article number/ Shipping form
Cu-etch-200 UBM is shipped ready for use.
As a standard, all compounds used are level „pure“.
Order number: Article number + Container-Code
Cu-etch-200 UBM
Article number
102200-40
1l
D
Container-Code
2,5l 5l 10l
- F G
20l
H
On request:
- Certificate of Analysis with individual requirements regarding elements
- etching solution in other purity grade or special grade regarding specific elements
Mixture
The etching solution is ready for use.
The etching solution is stable in time, it can be used multiple times depending on the
requirements of application. It is recommended to dispose the solution at the latest, when
the etching rate has changed by 20%.
Etching conditions
Temperature:
Tank:
Agitation:
Etching rate:
Pretreatment:
RT (21°C)
Tank for batch process, Petri dish for manual application
medium;
Circulation; stirring rod; autom./ man. agitation of work piece
200 to 250nm per minute (at RT)
where applicable descum / oxygen plasma for improving the wetting
conditions of the resist or metal mask (no wetting agents needed)
Etching result / inspection
The completed removal of the Cu can be identified by visual observation. There should be
no visible residue of Cu, which should be verified by inspection with optical microscope.
General application notes
Pretreatment
Substrates should be pretreated in oxygen plasma, in order to remove any potential
organic residues and to improve the wetting properties of the solution on resist masks. The
surface becomes hydrophilic and no extra wetting agents are required.
Page 2/3
Cu-etch-200 UBM
Article 102200-40
Cu etchant
for semiconductor and microsystem
technology
Technical Datasheet and Application Notes
Etching process
During the etching process, sufficient agitation of the solution or of the substrate is
needed. If used in manual processing, the etching time required can be identified by
observing a color changeover in the open etching areas. After visual qualification the
etching should be continued for another 10% to 15% of the time elapsed, in order to
assure the removal of any residues.
Post treatment
Thorough cleaning with DI-water / quick dump
Rinsing dryer or manually drying with nitrogen nozzle
Know issues / trouble shooting
Inhomogeneous etching result / incomplete etching
- Poor wetting / no descum or plasma executed
- Etching solution /etching capacity is consumed
- Insufficient agitation
Safety and disposal notes
The mixture is not classified as dangerous according to Regulation (EC) No. 1272/2008.
Refer to the safety and handling recommendations of the material safety datasheet before
use.
Do not empty into drains or the aquatic environment. Collect used or unused solution in
containers and perform waste disposal according to official state regulations.
Cleaned containers may be recycled.
Technical Support
NB Technologies GmbH
Fahrenheitstr. 1, 28259 Bremen
Tel.: + 49 421 2445810 FAX.: + 49 421 22379787
Email:***********************
Web:
Page 3/3