2024年10月28日发(作者：理尔雅)
GenX3
TM
600V
IGBT
High Speed PT IGBT for
40-100kHz Switching
IXGH60N60C3
V
CES
= 600V
I
C110
= 60A
V
CE(sat)
≤
2.5V
t
fi (typ)
= 50ns
TO-247 AD
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
I
A
E
AS
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
Maximum Ratings
600
600
V
V
V
V
A
A
A
A
mJ
A
W
°C
°C
°C
°C
°C
Nm/.
g
Features
z
z
z
z
±20
±30
G
C
E
Tab
T
C
= 25°C (Limited by Leads) 75
T
C
= 110°C 60
T
C
= 25°C, 1ms 360
T
C
= 25°C
T
C
= 25°C
40
400
G = Gate
E = Emitter
C = Collector
Tab = Collector
I
CM
= 125SSOAV
GE
= 15V, T
VJ
= 125°C, R
G
= 3Ω
(RBSOA) Clamped Inductive Load V
CE
≤
V
CES
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
T
C
= 25°C380
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
Optimized for Low Switching Losses
Square RBSOA
Avalanche rated
International Standard Package
Advantages
z
z
High Power Density
Low Gate Drive Requirement
Applications
z
SymbolTest Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250μA, V
GE
= 0V
= 250μA, V
CE
= V
GE
600
3.0 5.5
V
V
50μA
1 mA
±100 nA
T
J
= 125°C
2.2 2.5 V
1.7 V
z
z
z
z
z
z
z
V
CE
= V
CES,
V
GE
= 0V
T
J
= 125°C
V
CE
= 0V, V
GE
= ±20V
I
C
= 40A, V
GE
= 15V
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2010 IXYS CORPORATION, All Rights ReservedDS99928B(01/10)
/
IXGH60N60C3
SymbolTest Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= 40A, V
CE
= 10V, Note 1 23 38
V
CE
= 25V, V
GE
= 0V, f = 1MHz
2810
210
80
S
pF
pF
pF
nC
nC
nC
e
TO-247 (IXGH) Outline
1 2 3
∅ P
115
I
C
= 40A, V
GE
= 15V, V
CE
= 0.5 • V
CES
22
43
Inductive Load, T
J
= 25
°
C
I
C
= 40A, V
GE
= 15V
V
CE
= 480V, R
G
= 3Ω
Note 2
21ns
33ns
0.80mJ
70 110ns
50ns
0.45 0.80 mJ
21
33
1.25
112
86
0.80
ns
ns
mJ
ns
ns
mJ
Terminals:1 - Gate
3 - Emitted
2 - Collector
Tab - Collector
Dim.
Inductive Load, T
J
= 125
°
C
I
C
= 40A, V
GE
= 15V
V
CE
= 480V, R
G
= 3Ω
Note 2
0.33 °C/W
0.21 °C/W
Millimeter
.
A4.75.3
A
1
2.22.54
A
2
2.22.6
b1.01.4
b
1
1.652.13
b
2
2.873.12
C.4.8
D20.8021.46
E15.7516.26
e5.205.72
L19.8120.32
L14.50
∅P3.553.65
Q5.896.40
R4.325.49
S6.15BSC
Inches
.
.185.209
.087.102
.059.098
.040.055
.065.084
.113.123
.016.031
.819.845
.610.640
0.2050.225
.780.800
.177
.140.144
0.2320.252
.170.216
242BSC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered4,835,592
by one or more of the following U.S. patents:4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,3446,727,5857,005,734 B2 7,157,338B2
6,710,405 B26,759,6927,063,975 B2
6,710,4636,771,478 B27,071,537
/
IXGH60N60C3
Fig. 1. Output Characteristics @ T
J
= 25ºC
80
70
60
V
GE
= 15V
13V
11V
9V
300
V
GE
= 15V
13V
250
11V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
C
-
A
m
p
e
r
e
s
50
40
30
20
10
5V
0
0.00.40.81.21.62.02.42.83.2
I
C
-
A
m
p
e
r
e
s
200
150
9V
100
7V
50
7V
5V
0
6
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
80
70
60
V
GE
= 15V
13V
11V
1.2
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
V
GE
= 15V
1.1
I
C
= 80A
V
C
E
(
s
a
t
)
-
N
o
r
m
a
l
i
z
e
d
9V
1.0
0.9
I
C
= 40A
0.8
0.7
0.6
0.5
I
C
= 20A
I
C
-
A
m
p
e
r
e
s
50
40
30
20
10
0
0.00.40.81.21.62.02.42.83.2
5V
7V
255
V
CE
- VoltsT
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
67891
T
J
= 25ºC
160
140
120
Fig. 6. Input Admittance
I
C
-
A
m
p
e
r
e
s
V
C
E
-
V
o
l
t
s
I
C
= 80A
40A
20A
100
80
60
40
20
0
4.04.55.05.56.06.57.07.58.08.59.09.5
T
J
= 125ºC
25ºC
- 40ºC
V
GE
- VoltsV
GE
- Volts
© 2010 IXYS CORPORATION, All Rights Reserved
/
IXGH60N60C3
Fig. 7. Transconductance
70
T
J
= - 40ºC
60
50
25ºC
125ºC
14
12
10
8
6
4
2
0
120140160
0120
16
V
CE
= 300V
I
C
= 40A
I
G
= 10 mA
Fig. 8. Gate Charge
g
f
s
-
S
i
e
m
e
n
s
40
30
20
10
0
V
G
E
-
V
o
l
t
s
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
140
120
Fig. 10. Reverse-Bias Safe Operating Area
C
a
p
a
c
i
t
a
n
c
e
-
P
i
c
o
F
a
r
a
d
s
C
ies
100
I
C
-
A
m
p
e
r
e
s
1,000
C
oes
80
60
40
100
C
res
f
= 1 MHz
10
3540
T
J
= 125ºC
R
G
= 3Ω
dv / dt < 10V / ns
20
0
100550600
V
CE
- VoltsV
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z
(
t
h
)
J
C
-
º
C
/
W
0.10
0.01
0.00010.0010.010.1110
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
/
IXGH60N60C3
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
4.0
3.5
3.0
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 80A
2.5
2.0
1.5
1.0
0.5
0.0
34567891
I
C
= 40A
3.5
3.0
2.5
2.0
1.5
1.0
4.03.0
5.0
4.5
4.0
3.5
E
off
E
on
- - - -
R
G
= 3
Ω
,
V
GE
= 15V
V
CE
= 480V
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
4.0
3.5
3.0
E
on
- MilliJoules
E
o
f
f
-
M
i
l
l
i
J
o
u
l
e
s
E
o
f
f
-
M
i
l
l
i
J
o
u
l
e
s
E
on
- MilliJoules
2.5
2.0
1.5
1.0
0.5
0.0
20
T
J
= 125ºC
2.5
2.0
1.5
1.0
0.5
0.0
T
J
= 25ºC
R
G
- Ohms
I
C
- Amperes
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
3.5
3.0
2.5
E
off
E
on
- - - -
R
G
= 3Ω
,
V
GE
= 15V
V
CE
= 480V
4.0
3.5
3.0
2.5
I
C
= 80A
1.5
1.0
0.5
0.0
2535455565758595105115
I
C
= 40A
2.0
1.5
1.0
0.5
125
170
160
150
140
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
280
260
240
t
f
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 480V
t
d(off)
- Nanoseconds
220
200
180
E
on
- MilliJoules
t
f
-
N
a
n
o
s
e
c
o
n
d
s
E
o
f
f
-
M
i
l
l
i
J
o
u
l
e
s
130
120
110
100
90
80
70
60
34567891
I
C
= 40A
I
C
= 80A
2.0
160
140
120
100
80
60
T
J
- Degrees Centigrade
R
G
- Ohms
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
180
160
140
140
160
140
120
100
80
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
130
t
f
t
d(off)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 480V
130
120
t
f
t
d(off)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 80A
120
t
d(off)
- Nanoseconds
t
f
-
N
a
n
o
s
e
c
o
n
d
s
120
100
80
60
40
20
20
T
J
= 25ºC
T
J
= 125ºC
110
100
90
80
70
60
t
f
-
N
a
n
o
s
e
c
o
n
d
s
110
100
90
I
C
= 40A
80
70
60
125
t
d(off)
- Nanoseconds
60
40
20
2535455565758595105115
I
C
- Amperes
T
J
- Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
/
IXGH60N60C3
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
140
120
100
80
60
40
20
0
34567891
I
C
= 40A
50
110
100
45
90
Fig. 19. Inductive Turn-on Switching Times
vs. Collector Current
28
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 80A
t
r
t
d(on)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 25ºC, 125ºC
27
26
t
d(on)
- Nanoseconds
t
d(on)
- Nanoseconds
t
r
-
N
a
n
o
s
e
c
o
n
d
s
t
r
-
N
a
n
o
s
e
c
o
n
d
s
40
35
30
25
20
15
80
70
60
50
40
30
20
10
20
25
24
23
22
21
20
19
18
253065707580
R
G
- Ohms
I
C
- Amperes
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
110
100
90
29
t
r
t
d(on)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 480V
28
27
t
d(on)
- Nanoseconds
t
r
-
N
a
n
o
s
e
c
o
n
d
s
80
70
60
50
40
30
20
2535455565758595105115
I
C
= 40A
I
C
= 80A
26
25
24
23
22
21
20
125
T
J
- Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_60N60C3(6D)01-15-10-E
/
分销商库存信息:
IXYS
IXGH60N60C3
2024年10月28日发(作者：理尔雅)
GenX3
TM
600V
IGBT
High Speed PT IGBT for
40-100kHz Switching
IXGH60N60C3
V
CES
= 600V
I
C110
= 60A
V
CE(sat)
≤
2.5V
t
fi (typ)
= 50ns
TO-247 AD
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
I
A
E
AS
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
Maximum Ratings
600
600
V
V
V
V
A
A
A
A
mJ
A
W
°C
°C
°C
°C
°C
Nm/.
g
Features
z
z
z
z
±20
±30
G
C
E
Tab
T
C
= 25°C (Limited by Leads) 75
T
C
= 110°C 60
T
C
= 25°C, 1ms 360
T
C
= 25°C
T
C
= 25°C
40
400
G = Gate
E = Emitter
C = Collector
Tab = Collector
I
CM
= 125SSOAV
GE
= 15V, T
VJ
= 125°C, R
G
= 3Ω
(RBSOA) Clamped Inductive Load V
CE
≤
V
CES
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
T
C
= 25°C380
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
Optimized for Low Switching Losses
Square RBSOA
Avalanche rated
International Standard Package
Advantages
z
z
High Power Density
Low Gate Drive Requirement
Applications
z
SymbolTest Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250μA, V
GE
= 0V
= 250μA, V
CE
= V
GE
600
3.0 5.5
V
V
50μA
1 mA
±100 nA
T
J
= 125°C
2.2 2.5 V
1.7 V
z
z
z
z
z
z
z
V
CE
= V
CES,
V
GE
= 0V
T
J
= 125°C
V
CE
= 0V, V
GE
= ±20V
I
C
= 40A, V
GE
= 15V
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2010 IXYS CORPORATION, All Rights ReservedDS99928B(01/10)
/
IXGH60N60C3
SymbolTest Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= 40A, V
CE
= 10V, Note 1 23 38
V
CE
= 25V, V
GE
= 0V, f = 1MHz
2810
210
80
S
pF
pF
pF
nC
nC
nC
e
TO-247 (IXGH) Outline
1 2 3
∅ P
115
I
C
= 40A, V
GE
= 15V, V
CE
= 0.5 • V
CES
22
43
Inductive Load, T
J
= 25
°
C
I
C
= 40A, V
GE
= 15V
V
CE
= 480V, R
G
= 3Ω
Note 2
21ns
33ns
0.80mJ
70 110ns
50ns
0.45 0.80 mJ
21
33
1.25
112
86
0.80
ns
ns
mJ
ns
ns
mJ
Terminals:1 - Gate
3 - Emitted
2 - Collector
Tab - Collector
Dim.
Inductive Load, T
J
= 125
°
C
I
C
= 40A, V
GE
= 15V
V
CE
= 480V, R
G
= 3Ω
Note 2
0.33 °C/W
0.21 °C/W
Millimeter
.
A4.75.3
A
1
2.22.54
A
2
2.22.6
b1.01.4
b
1
1.652.13
b
2
2.873.12
C.4.8
D20.8021.46
E15.7516.26
e5.205.72
L19.8120.32
L14.50
∅P3.553.65
Q5.896.40
R4.325.49
S6.15BSC
Inches
.
.185.209
.087.102
.059.098
.040.055
.065.084
.113.123
.016.031
.819.845
.610.640
0.2050.225
.780.800
.177
.140.144
0.2320.252
.170.216
242BSC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered4,835,592
by one or more of the following U.S. patents:4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,3446,727,5857,005,734 B2 7,157,338B2
6,710,405 B26,759,6927,063,975 B2
6,710,4636,771,478 B27,071,537
/
IXGH60N60C3
Fig. 1. Output Characteristics @ T
J
= 25ºC
80
70
60
V
GE
= 15V
13V
11V
9V
300
V
GE
= 15V
13V
250
11V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
C
-
A
m
p
e
r
e
s
50
40
30
20
10
5V
0
0.00.40.81.21.62.02.42.83.2
I
C
-
A
m
p
e
r
e
s
200
150
9V
100
7V
50
7V
5V
0
6
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
80
70
60
V
GE
= 15V
13V
11V
1.2
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
V
GE
= 15V
1.1
I
C
= 80A
V
C
E
(
s
a
t
)
-
N
o
r
m
a
l
i
z
e
d
9V
1.0
0.9
I
C
= 40A
0.8
0.7
0.6
0.5
I
C
= 20A
I
C
-
A
m
p
e
r
e
s
50
40
30
20
10
0
0.00.40.81.21.62.02.42.83.2
5V
7V
255
V
CE
- VoltsT
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
67891
T
J
= 25ºC
160
140
120
Fig. 6. Input Admittance
I
C
-
A
m
p
e
r
e
s
V
C
E
-
V
o
l
t
s
I
C
= 80A
40A
20A
100
80
60
40
20
0
4.04.55.05.56.06.57.07.58.08.59.09.5
T
J
= 125ºC
25ºC
- 40ºC
V
GE
- VoltsV
GE
- Volts
© 2010 IXYS CORPORATION, All Rights Reserved
/
IXGH60N60C3
Fig. 7. Transconductance
70
T
J
= - 40ºC
60
50
25ºC
125ºC
14
12
10
8
6
4
2
0
120140160
0120
16
V
CE
= 300V
I
C
= 40A
I
G
= 10 mA
Fig. 8. Gate Charge
g
f
s
-
S
i
e
m
e
n
s
40
30
20
10
0
V
G
E
-
V
o
l
t
s
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
140
120
Fig. 10. Reverse-Bias Safe Operating Area
C
a
p
a
c
i
t
a
n
c
e
-
P
i
c
o
F
a
r
a
d
s
C
ies
100
I
C
-
A
m
p
e
r
e
s
1,000
C
oes
80
60
40
100
C
res
f
= 1 MHz
10
3540
T
J
= 125ºC
R
G
= 3Ω
dv / dt < 10V / ns
20
0
100550600
V
CE
- VoltsV
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z
(
t
h
)
J
C
-
º
C
/
W
0.10
0.01
0.00010.0010.010.1110
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
/
IXGH60N60C3
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
4.0
3.5
3.0
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 80A
2.5
2.0
1.5
1.0
0.5
0.0
34567891
I
C
= 40A
3.5
3.0
2.5
2.0
1.5
1.0
4.03.0
5.0
4.5
4.0
3.5
E
off
E
on
- - - -
R
G
= 3
Ω
,
V
GE
= 15V
V
CE
= 480V
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
4.0
3.5
3.0
E
on
- MilliJoules
E
o
f
f
-
M
i
l
l
i
J
o
u
l
e
s
E
o
f
f
-
M
i
l
l
i
J
o
u
l
e
s
E
on
- MilliJoules
2.5
2.0
1.5
1.0
0.5
0.0
20
T
J
= 125ºC
2.5
2.0
1.5
1.0
0.5
0.0
T
J
= 25ºC
R
G
- Ohms
I
C
- Amperes
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
3.5
3.0
2.5
E
off
E
on
- - - -
R
G
= 3Ω
,
V
GE
= 15V
V
CE
= 480V
4.0
3.5
3.0
2.5
I
C
= 80A
1.5
1.0
0.5
0.0
2535455565758595105115
I
C
= 40A
2.0
1.5
1.0
0.5
125
170
160
150
140
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
280
260
240
t
f
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 480V
t
d(off)
- Nanoseconds
220
200
180
E
on
- MilliJoules
t
f
-
N
a
n
o
s
e
c
o
n
d
s
E
o
f
f
-
M
i
l
l
i
J
o
u
l
e
s
130
120
110
100
90
80
70
60
34567891
I
C
= 40A
I
C
= 80A
2.0
160
140
120
100
80
60
T
J
- Degrees Centigrade
R
G
- Ohms
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
180
160
140
140
160
140
120
100
80
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
130
t
f
t
d(off)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 480V
130
120
t
f
t
d(off)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 80A
120
t
d(off)
- Nanoseconds
t
f
-
N
a
n
o
s
e
c
o
n
d
s
120
100
80
60
40
20
20
T
J
= 25ºC
T
J
= 125ºC
110
100
90
80
70
60
t
f
-
N
a
n
o
s
e
c
o
n
d
s
110
100
90
I
C
= 40A
80
70
60
125
t
d(off)
- Nanoseconds
60
40
20
2535455565758595105115
I
C
- Amperes
T
J
- Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
/
IXGH60N60C3
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
140
120
100
80
60
40
20
0
34567891
I
C
= 40A
50
110
100
45
90
Fig. 19. Inductive Turn-on Switching Times
vs. Collector Current
28
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 80A
t
r
t
d(on)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 25ºC, 125ºC
27
26
t
d(on)
- Nanoseconds
t
d(on)
- Nanoseconds
t
r
-
N
a
n
o
s
e
c
o
n
d
s
t
r
-
N
a
n
o
s
e
c
o
n
d
s
40
35
30
25
20
15
80
70
60
50
40
30
20
10
20
25
24
23
22
21
20
19
18
253065707580
R
G
- Ohms
I
C
- Amperes
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
110
100
90
29
t
r
t
d(on)
- - - -
R
G
= 3Ω
, V
GE
= 15V
V
CE
= 480V
28
27
t
d(on)
- Nanoseconds
t
r
-
N
a
n
o
s
e
c
o
n
d
s
80
70
60
50
40
30
20
2535455565758595105115
I
C
= 40A
I
C
= 80A
26
25
24
23
22
21
20
125
T
J
- Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_60N60C3(6D)01-15-10-E
/
分销商库存信息:
IXYS
IXGH60N60C3