2024年10月29日发(作者：暴芳蔼)
FCA36N60NF N-Channel MOSFET, FRFET
February 2011
SupreMOS
TM
tm
FCA36N60NF
N-Channel MOSFET, FRFET
600V, 36A, 95mΩ
Features
•R
DS(on)
= 80mΩ ( Typ.)@ V
GS
= 10V, I
D
= 18A
•Ultra Low Gate Charge ( Typ. Qg = 86nC)
•Low Effective Output Capacitance
•100% Avalanche Tested
•RoHS Compliant
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advanced technology and precise pro-
cess control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
TO-3PN
GDS
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Continuous (T
C
= 25
o
C)
Continuous (T
C
= 100
o
C)
Pulsed (Note 1)
ParameterFCA36N60NF
600
±30
34.9
22
104.7
1800
12
3.12
50
100
(T
C
= 25
o
C)
Derate above 25
o
C
312
2.6
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt (Note 3)
MOSFET dv/dt Ruggedness
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
FCA36N60NF
0.40
0.24
40
o
Units
C/W
©2011 Fairchild Semiconductor Corporation
FCA36N60NF Rev. A
FCA36N60NF N-Channel MOSFET, FRFET
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Device Marking
FCA36N60NF
Device
FCA36N60NF
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
SymbolParameterTest
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I
D
= 1mA, V
GS
= 0V,T
J
= 25
o
C
I
D
= 1mA, Referenced to 25
o
C
V
DS
= 480V, V
GS
= 0V
T
J
= 125
o
C
V
GS
= ±30V, V
DS
= 0V
600
-
-
-
-
-
0.60
-
-
-
-
-
10
100
±100
V
V/
o
C
μA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250μA
V
GS
= 10V, I
D
= 18A
V
DS
= 20V, I
D
= 18A
3.0
-
-
3.7
80
39
5.0
95
-
V
mΩ
S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g(tot)
Q
gs
Q
gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V
DS
= 100V, V
GS
= 0V
f = 1MHz
V
DS
= 380V, V
GS
= 0V, f = 1MHz
V
DS
= 0V to 480V, V
GS
= 0V
V
DS
= 380V, I
D
= 18A,
V
GS
= 10V
(Note 4)
-
-
-
-
-
-
-
-
-
3191
145
5
81
338
86
16
36
1.2
4245
195
8
-
-
112
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
ΩDrain Open, f=1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 380V, I
D
= 18A
R
G
= 4.7Ω
(Note 4)
-
-
-
-
27
17
92
4
64
44
194
18
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
SD
= 18A
V
GS
= 0V, I
SD
= 18A
dI
F
/dt = 100A/μs
-
-
-
-
-
-
-
-
166
1.3
36
108
1.2
-
-
A
A
V
ns
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 12A, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤ 36A, di/dt ≤ 1200A/μs, V
DD
≤ 380V, Starting T
J
= 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCA36N60NF Rev. A
FCA36N60NF N-Channel MOSFET, FRFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
100
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
Figure 2. Transfer Characteristics
200
100
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
10
10
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25C
o
-55C
o
1
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
1
0.11
V
DS
, Drain-Source Voltage[V]
1020
0.2
2468
V
GS
, Gate-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
150
200
100
R
D
S
(
O
N
)
[
m
Ω
]
,
D
r
a
i
n
-
S
o
u
r
c
e
O
n
-
R
e
s
i
s
t
a
n
c
e
125
I
S
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
100
V
GS
= 10V
10
150C
o
25C
o
V
GS
= 20V
75
o
1
*Notes:
1. V
GS
= 0V
50
*Notes: T
C
= 25C
018365472
I
D
, Drain Current [A]
90108
0.2
0.2
2. 250
μ
s Pulse Test
0.40.60.81.01.2
V
SD
, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
100000
Figure 6. Gate Charge Characteristics
10
V
G
S
,
G
a
t
e
-
S
o
u
r
c
e
V
o
l
t
a
g
e
[
V
]
10000
C
a
p
a
c
i
t
a
n
c
e
s
[
p
F
]
C
iss
8
V
DS
= 120V
V
DS
= 300V
1000
C
oss
6
V
DS
= 480V
100
10
*Notes:
1. V
GS
= 0V
2. f = 1MHz
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
4
C
rss
2
*Notes:
I
D
= 18A
1
0.1110100
V
DS
, Drain-Source Voltage [V]
600
0
020406080
Q
g
, Total Gate Charge [nC]
100
FCA36N60NF Rev. A
150C
o
25C
o
FCA36N60NF N-Channel MOSFET, FRFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
B
V
D
S
S
,
[
N
o
r
m
a
l
i
z
e
d
]
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
3.0
R
D
S
(
o
n
)
,
[
N
o
r
m
a
l
i
z
e
d
]
D
r
a
i
n
-
S
o
u
r
c
e
O
n
-
R
e
s
i
s
t
a
n
c
e
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. V
GS
= 10V
2. I
D
= 18A
1.1
1.0
0.9
*Notes:
1. V
GS
= 0V
2. I
D
= 1mA
0.8
-100
-50050100
o
T
J
, Junction Temperature
[
C
]
150
-50050100
o
T
J
, Junction Temperature
[
C
]
150
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
40
500
100
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
10
μ
s
10
Operation in This Area
is Limited by R
DS(on)
1ms
10ms
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
100
μ
s
30
1
DC
20
*Notes:
0.1
1. T
C
= 25C
2. T
J
= 150C
3. Single Pulse
o
o
10
0.01
110100
V
DS
, Drain-Source Voltage [V]
1000
0
25
Figure 11. Transient Thermal Response Curve
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
[
Z
θ
J
C
]
5075100125
o
T
C
, Case Temperature
[
C
]
150
0.5
0.1
0.2
0.1
0.05
0.02
0.01
Single pulse
P
DM
t
1
t
2
o
0.01
*Notes:
1. Z
θ
JC
(t) = 0.40C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
0.005
-5
1010
-4
10101010
Rectangular Pulse Duration [sec]
-3-2-10
10
1
10
2
FCA36N60NF Rev. A
4
FCA36N60NF N-Channel MOSFET, FRFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA36N60NF Rev. A
FCA36N60NF N-Channel MOSFET, FRFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
•dv/dtcontrolled by R
G
•I
SD
controlled by pulse period
V
GS
( Driver )
Gate Pulse Width
D =
--------------------------
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
( DUT )
I
RM
di/dt
Body Diode Reverse Current
V
DS
( DUT )
Body Diode Recoverydv/dt
V
SD
V
DD
Body Diode
Forward Voltage Drop
FCA36N60NF Rev. A
FCA36N60NF N-Channel MOSFET, FRFET
Mechanical Dimensions
TO-3PN
FCA36N60NF Rev. A
7
FCA36N60NF N-Channel MOSFET, FRFET
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Datasheet contains the design specifications for product development. Specifications
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Rev. I51
FCA36N60NF Rev. A
8
2024年10月29日发(作者：暴芳蔼)
FCA36N60NF N-Channel MOSFET, FRFET
February 2011
SupreMOS
TM
tm
FCA36N60NF
N-Channel MOSFET, FRFET
600V, 36A, 95mΩ
Features
•R
DS(on)
= 80mΩ ( Typ.)@ V
GS
= 10V, I
D
= 18A
•Ultra Low Gate Charge ( Typ. Qg = 86nC)
•Low Effective Output Capacitance
•100% Avalanche Tested
•RoHS Compliant
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advanced technology and precise pro-
cess control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
TO-3PN
GDS
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Continuous (T
C
= 25
o
C)
Continuous (T
C
= 100
o
C)
Pulsed (Note 1)
ParameterFCA36N60NF
600
±30
34.9
22
104.7
1800
12
3.12
50
100
(T
C
= 25
o
C)
Derate above 25
o
C
312
2.6
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt (Note 3)
MOSFET dv/dt Ruggedness
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
FCA36N60NF
0.40
0.24
40
o
Units
C/W
©2011 Fairchild Semiconductor Corporation
FCA36N60NF Rev. A
FCA36N60NF N-Channel MOSFET, FRFET
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Device Marking
FCA36N60NF
Device
FCA36N60NF
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
SymbolParameterTest
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I
D
= 1mA, V
GS
= 0V,T
J
= 25
o
C
I
D
= 1mA, Referenced to 25
o
C
V
DS
= 480V, V
GS
= 0V
T
J
= 125
o
C
V
GS
= ±30V, V
DS
= 0V
600
-
-
-
-
-
0.60
-
-
-
-
-
10
100
±100
V
V/
o
C
μA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250μA
V
GS
= 10V, I
D
= 18A
V
DS
= 20V, I
D
= 18A
3.0
-
-
3.7
80
39
5.0
95
-
V
mΩ
S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g(tot)
Q
gs
Q
gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V
DS
= 100V, V
GS
= 0V
f = 1MHz
V
DS
= 380V, V
GS
= 0V, f = 1MHz
V
DS
= 0V to 480V, V
GS
= 0V
V
DS
= 380V, I
D
= 18A,
V
GS
= 10V
(Note 4)
-
-
-
-
-
-
-
-
-
3191
145
5
81
338
86
16
36
1.2
4245
195
8
-
-
112
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
ΩDrain Open, f=1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 380V, I
D
= 18A
R
G
= 4.7Ω
(Note 4)
-
-
-
-
27
17
92
4
64
44
194
18
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
SD
= 18A
V
GS
= 0V, I
SD
= 18A
dI
F
/dt = 100A/μs
-
-
-
-
-
-
-
-
166
1.3
36
108
1.2
-
-
A
A
V
ns
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 12A, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤ 36A, di/dt ≤ 1200A/μs, V
DD
≤ 380V, Starting T
J
= 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCA36N60NF Rev. A
FCA36N60NF N-Channel MOSFET, FRFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
100
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
Figure 2. Transfer Characteristics
200
100
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
10
10
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25C
o
-55C
o
1
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
1
0.11
V
DS
, Drain-Source Voltage[V]
1020
0.2
2468
V
GS
, Gate-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
150
200
100
R
D
S
(
O
N
)
[
m
Ω
]
,
D
r
a
i
n
-
S
o
u
r
c
e
O
n
-
R
e
s
i
s
t
a
n
c
e
125
I
S
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
100
V
GS
= 10V
10
150C
o
25C
o
V
GS
= 20V
75
o
1
*Notes:
1. V
GS
= 0V
50
*Notes: T
C
= 25C
018365472
I
D
, Drain Current [A]
90108
0.2
0.2
2. 250
μ
s Pulse Test
0.40.60.81.01.2
V
SD
, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
100000
Figure 6. Gate Charge Characteristics
10
V
G
S
,
G
a
t
e
-
S
o
u
r
c
e
V
o
l
t
a
g
e
[
V
]
10000
C
a
p
a
c
i
t
a
n
c
e
s
[
p
F
]
C
iss
8
V
DS
= 120V
V
DS
= 300V
1000
C
oss
6
V
DS
= 480V
100
10
*Notes:
1. V
GS
= 0V
2. f = 1MHz
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
4
C
rss
2
*Notes:
I
D
= 18A
1
0.1110100
V
DS
, Drain-Source Voltage [V]
600
0
020406080
Q
g
, Total Gate Charge [nC]
100
FCA36N60NF Rev. A
150C
o
25C
o
FCA36N60NF N-Channel MOSFET, FRFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
B
V
D
S
S
,
[
N
o
r
m
a
l
i
z
e
d
]
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
3.0
R
D
S
(
o
n
)
,
[
N
o
r
m
a
l
i
z
e
d
]
D
r
a
i
n
-
S
o
u
r
c
e
O
n
-
R
e
s
i
s
t
a
n
c
e
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. V
GS
= 10V
2. I
D
= 18A
1.1
1.0
0.9
*Notes:
1. V
GS
= 0V
2. I
D
= 1mA
0.8
-100
-50050100
o
T
J
, Junction Temperature
[
C
]
150
-50050100
o
T
J
, Junction Temperature
[
C
]
150
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
40
500
100
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
10
μ
s
10
Operation in This Area
is Limited by R
DS(on)
1ms
10ms
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
100
μ
s
30
1
DC
20
*Notes:
0.1
1. T
C
= 25C
2. T
J
= 150C
3. Single Pulse
o
o
10
0.01
110100
V
DS
, Drain-Source Voltage [V]
1000
0
25
Figure 11. Transient Thermal Response Curve
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
[
Z
θ
J
C
]
5075100125
o
T
C
, Case Temperature
[
C
]
150
0.5
0.1
0.2
0.1
0.05
0.02
0.01
Single pulse
P
DM
t
1
t
2
o
0.01
*Notes:
1. Z
θ
JC
(t) = 0.40C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
0.005
-5
1010
-4
10101010
Rectangular Pulse Duration [sec]
-3-2-10
10
1
10
2
FCA36N60NF Rev. A
4
FCA36N60NF N-Channel MOSFET, FRFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA36N60NF Rev. A
FCA36N60NF N-Channel MOSFET, FRFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
•dv/dtcontrolled by R
G
•I
SD
controlled by pulse period
V
GS
( Driver )
Gate Pulse Width
D =
--------------------------
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
( DUT )
I
RM
di/dt
Body Diode Reverse Current
V
DS
( DUT )
Body Diode Recoverydv/dt
V
SD
V
DD
Body Diode
Forward Voltage Drop
FCA36N60NF Rev. A
FCA36N60NF N-Channel MOSFET, FRFET
Mechanical Dimensions
TO-3PN
FCA36N60NF Rev. A
7
FCA36N60NF N-Channel MOSFET, FRFET
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Datasheet contains the design specifications for product development. Specifications
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Rev. I51
FCA36N60NF Rev. A
8