2024年10月31日发(作者：丁致)
Si7850DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
aaaa
PRODUCT SUMMARY
V
DS
(V)
60
r
DS(on)
(Ω)
0.022 at V
GS
= 10 V
0.031 at V
GS
= 4.5 V
I
D
(A)
10.3
8.7
FEATURES
•TrenchFET
®
Power MOSFET
•New Low Thermal Resistance
PowerPAK
®
Package with Low 1.07-mm
Profile
•PWM Optimized for Fast Switching
•100 % R
g
Tested
•Lead (Pb)-free Version is RoHS Compliant
Pb-free
Available
RoHS*
COMPLIANT
PowerPAK SO-8
APPLICATIONS
6.15 mm
S
1
2
3
4
D
8
7
6
5
D
D
D
S
S
G
5.15 mm
•Primary Side Switch for 24-V DC/DC Applications
•Secondary Synchronous Rectifier
D
G
Bottom View
Ordering Information:
Si7850DP-T1
Si7850DP-T1—E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T
A
= 25°C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Continuous Source Current
Pulsed Drain Current
Avalanche Current
b
Single Avalanche Energy
b
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
4.5
2.3
– 55 to 150
10 secs Steady State
60
± 20
10.3
7.5
3.7
40
15
11
1.8
0.9
6.2
4.5
1.5
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Prmeter Symbol TypiclMximum
t ≤ 10 sec2228
R
thJA
Maximum Junction-to-Ambient
a
Steady State5870
Maximum Junction-to-Case (Drain)Steady StateR
thJC
2.63.3
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. Guaranteed by design, not subject to production testing.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Unit
°C/W
Document Number: 71625
S-52554-Rev. D, 19-Dec-05
1
Si7850DP
Vishay Siliconix
SPECIFICATIONS T
J
= 25°C, unless otherwise noted
Prmeter Symbol Test Condition Min Typ
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
R
G
t
d(on)
t
r
t
f
t
rr
I
F
= 3.8 A, di/dt = 100 A/µs
V
DS
= 30 V, V
GS
= 10 V, I
D
= 10.3 A
0.5
18
3.4
1.4
10
2.2
20
20
50
24
80
ns
27
nC
Ω
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥ 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10.3 A
V
GS
= 4.5 V, I
D
= 8.7 A
V
DS
= 15 V, I
D
= 10.3 A
I
S
= 3.8 A, V
GS
= 0 V
40
0.018
0.025
26
0.851.2
0.022
0.031
60
1
3
± 100
1
20
V
nA
µA
A
Ω
S
V
MxUnit
Q
gd
5.3
10
V
DD
= 30 V, R
L
= 30 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
G
= 6 Ω
t
d(off)
25
12
50
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
aaa
TYPICAL CHARACTERISTICS 25°C, unless noted
40
V
GS
= 10 thru 5 V
32
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
32
40
24
4 V
16
24
16
T
C
= 150 °C
8
25 °C
0
- 55 °C
34
5
8
3 V
0
0.00.51.01.52.02.53.0
012
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
Document Number: 71625
S-52554-Rev. D, 19-Dec-05
Si7850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25°C, unless noted
0.06
1400
1200
C
-
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
1000
800
600
400
200
0
0
C
rss
1
C
oss
C
iss
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
Ω
)
0.05
0.04
V
GS
= 4.5 V
0.03
V
GS
= 10 V
r
D
S
(
o
n
)
0.02
0.01
0.00
I
D
-
Drain Current (A)V
DS
-
Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
2.0
V
DS
= 30 V
I
D
= 10.3 A
1.8
r
D
S
(
o
n
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
1.6
1.4
1.2
1.0
0.8
0
048121620
Q
g
-
Total Gate Charge (nC)
0.6
V
GS
= 10 V
I
D
= 10.3 A
Capacitance
-
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
8
6
4
V
G
S
2
-
50
-
255150
T
J
-
Junction Temperature (°C)
Gate Charge
50
0.06
On-Resistance vs. Junction Temperature
0.05
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 150 °C
10
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
Ω
)
T
J
= 25 °C
0.04
I
D
= 10.3 A
0.03
0.02
r
D
S
(
o
n
)
1
0.000.51.01.5
2.02.5
I
S
0.01
0.00
0246810
Source-to-Drain Voltage (V)
V
SD
-
Source-Drain Diode Forward Voltage
V
GS
-
Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71625
S-52554-Rev. D, 19-Dec-05
3
Si7850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25°C, unless noted
0.4
0.2
0.0
-0.2
-0.4
-0.6
20
-0.8
-1.0
- 50
0
- 255150
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature (°C)
I
D
= 250 μA
P
o
w
e
r
(
W
)
60
100
80
V
G
S
(
t
h
)
V
a
r
i
a
n
c
e
(
V
)
40
Threshold Voltage
2
1
Duty Cycle = 0.5
Single Pulse Power
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-
4
10
-
3
10
-
2
10
-
1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 58 °C/W
3. T
JM
-
T
A
= P
DM
Z
thJA
(t)
4. Surface Mounted
10100600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-
4
10
-
3
10
-
2
Square Wave Pulse Duration (sec)
10
-
1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see /ppg?71625.
4
Document Number: 71625
S-52554-Rev. D, 19-Dec-05
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
1
2024年10月31日发(作者：丁致)
Si7850DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
aaaa
PRODUCT SUMMARY
V
DS
(V)
60
r
DS(on)
(Ω)
0.022 at V
GS
= 10 V
0.031 at V
GS
= 4.5 V
I
D
(A)
10.3
8.7
FEATURES
•TrenchFET
®
Power MOSFET
•New Low Thermal Resistance
PowerPAK
®
Package with Low 1.07-mm
Profile
•PWM Optimized for Fast Switching
•100 % R
g
Tested
•Lead (Pb)-free Version is RoHS Compliant
Pb-free
Available
RoHS*
COMPLIANT
PowerPAK SO-8
APPLICATIONS
6.15 mm
S
1
2
3
4
D
8
7
6
5
D
D
D
S
S
G
5.15 mm
•Primary Side Switch for 24-V DC/DC Applications
•Secondary Synchronous Rectifier
D
G
Bottom View
Ordering Information:
Si7850DP-T1
Si7850DP-T1—E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T
A
= 25°C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Continuous Source Current
Pulsed Drain Current
Avalanche Current
b
Single Avalanche Energy
b
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
4.5
2.3
– 55 to 150
10 secs Steady State
60
± 20
10.3
7.5
3.7
40
15
11
1.8
0.9
6.2
4.5
1.5
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Prmeter Symbol TypiclMximum
t ≤ 10 sec2228
R
thJA
Maximum Junction-to-Ambient
a
Steady State5870
Maximum Junction-to-Case (Drain)Steady StateR
thJC
2.63.3
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. Guaranteed by design, not subject to production testing.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Unit
°C/W
Document Number: 71625
S-52554-Rev. D, 19-Dec-05
1
Si7850DP
Vishay Siliconix
SPECIFICATIONS T
J
= 25°C, unless otherwise noted
Prmeter Symbol Test Condition Min Typ
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
R
G
t
d(on)
t
r
t
f
t
rr
I
F
= 3.8 A, di/dt = 100 A/µs
V
DS
= 30 V, V
GS
= 10 V, I
D
= 10.3 A
0.5
18
3.4
1.4
10
2.2
20
20
50
24
80
ns
27
nC
Ω
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥ 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10.3 A
V
GS
= 4.5 V, I
D
= 8.7 A
V
DS
= 15 V, I
D
= 10.3 A
I
S
= 3.8 A, V
GS
= 0 V
40
0.018
0.025
26
0.851.2
0.022
0.031
60
1
3
± 100
1
20
V
nA
µA
A
Ω
S
V
MxUnit
Q
gd
5.3
10
V
DD
= 30 V, R
L
= 30 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
G
= 6 Ω
t
d(off)
25
12
50
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
aaa
TYPICAL CHARACTERISTICS 25°C, unless noted
40
V
GS
= 10 thru 5 V
32
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
-
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
32
40
24
4 V
16
24
16
T
C
= 150 °C
8
25 °C
0
- 55 °C
34
5
8
3 V
0
0.00.51.01.52.02.53.0
012
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
Document Number: 71625
S-52554-Rev. D, 19-Dec-05
Si7850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25°C, unless noted
0.06
1400
1200
C
-
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
1000
800
600
400
200
0
0
C
rss
1
C
oss
C
iss
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
Ω
)
0.05
0.04
V
GS
= 4.5 V
0.03
V
GS
= 10 V
r
D
S
(
o
n
)
0.02
0.01
0.00
I
D
-
Drain Current (A)V
DS
-
Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
2.0
V
DS
= 30 V
I
D
= 10.3 A
1.8
r
D
S
(
o
n
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
1.6
1.4
1.2
1.0
0.8
0
048121620
Q
g
-
Total Gate Charge (nC)
0.6
V
GS
= 10 V
I
D
= 10.3 A
Capacitance
-
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
8
6
4
V
G
S
2
-
50
-
255150
T
J
-
Junction Temperature (°C)
Gate Charge
50
0.06
On-Resistance vs. Junction Temperature
0.05
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 150 °C
10
-
O
n
-
R
e
s
i
s
t
a
n
c
e
(
Ω
)
T
J
= 25 °C
0.04
I
D
= 10.3 A
0.03
0.02
r
D
S
(
o
n
)
1
0.000.51.01.5
2.02.5
I
S
0.01
0.00
0246810
Source-to-Drain Voltage (V)
V
SD
-
Source-Drain Diode Forward Voltage
V
GS
-
Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71625
S-52554-Rev. D, 19-Dec-05
3
Si7850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25°C, unless noted
0.4
0.2
0.0
-0.2
-0.4
-0.6
20
-0.8
-1.0
- 50
0
- 255150
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature (°C)
I
D
= 250 μA
P
o
w
e
r
(
W
)
60
100
80
V
G
S
(
t
h
)
V
a
r
i
a
n
c
e
(
V
)
40
Threshold Voltage
2
1
Duty Cycle = 0.5
Single Pulse Power
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-
4
10
-
3
10
-
2
10
-
1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 58 °C/W
3. T
JM
-
T
A
= P
DM
Z
thJA
(t)
4. Surface Mounted
10100600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
N
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r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
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s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-
4
10
-
3
10
-
2
Square Wave Pulse Duration (sec)
10
-
1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see /ppg?71625.
4
Document Number: 71625
S-52554-Rev. D, 19-Dec-05
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Document Number: 91000
Revision: 18-Jul-08
1