2024年10月31日发(作者：候访波)
April 1996
NDP6060L / NDB6060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
48A, 60V. R
DS(ON)
= 0.025
Ω
@ V
GS
= 5V.
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP6060L
60
60
± 16
± 25
48
144
100
0.67
-65 to 175
275
NDB6060LUnits
V
V
V
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current
- Continuous
- Pulsed
A
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Temperature
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP6060L Rev. D / NDB6060L Rev. E
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
W
DSS
I
AR
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Parameter
Single Pulse Drain-Source Avalanche
Energy
Conditions
V
DD
= 25 V, I
D
= 48 A
MinTypMax
200
48
60
T
J
= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
V
GS
= 5 V, I
D
= 24 A
T
J
= 125°C
V
GS
= 10 V, I
D
= 24 A
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 24 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
48
10
1630
460
150
2000
800
400
1
0.65
250
1
100
-100
2
1.5
0.025
0.04
0.02
A
S
pF
pF
pF
Units
mJ
A
V
µA
mA
nA
nA
V
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
OFF CHARACTERISTICS
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0 V
ON CHARACTERISTICS
(Note 1)
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 48 V,
I
D
= 48 A, V
GS
= 5 V
V
DD
= 30 V, I
D
= 48 A,
V
GS
= 5 V, R
GEN
= 15
Ω
,
R
GS
= 15
Ω
15
320
49
161
36
8.2
21
30
500
100
300
60
nS
nS
nS
nS
nC
nC
nC
NDP6060L Rev. D / NDB6060L Rev. E
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
I
S
I
SM
V
SD
ParameterConditionsMinTypMax
48
144
1.3
T
J
= 125°C
t
rr
I
rr
R
θ
JC
R
θ
JA
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
F
= 48 A,
dI
F
/dt = 100 A/µs
35
2
75
3.6
1.2
140
8
ns
A
Units
A
A
V
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward VoltageV
GS
= 0 V, I
S
= 24 A
(Note 1)
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.5
62.5
°C/W
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6060L Rev. D / NDB6060L Rev. E
Typical Electrical Characteristics
1002
V = 10V
GS
I
,
D
R
A
I
N
-
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
D
80
6.0
4.5
R
D
S
n
)
,
N
O
R
M
A
L
I
Z
E
D
(
o
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
V = 3.0V
GS
5.0
3.5
4.0
1.5
60
4.5
5.0
5.5
1
4.0
3.5
3.0
2.5
40
6.0
10
20
0
0123
V , DRAIN-SOURCE VOLTAGE (V)
DS
45
0.5
020
D
406080100
I , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
2
I = 24A
D
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
1.75
V = 5.0V
GS
1.8
1.6
1.4
1.2
1
0.8
0.6
V = 5V
GS
R
D
)
,
N
O
R
M
A
L
I
Z
E
D
S
(
o
n
T = 125°C
J
R
D
N
S
(
O
)
,
N
O
R
M
A
L
I
Z
E
D
1.5
1.25
25°C
1
0.75
-55°C
0.5
-50-255
T , JUNCTION TEMPERATURE (°C)
J
150175
I , DRAIN CURRENT (A)
D
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
60
1.3
50
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
25°C
125°C
V
S
(
)
,
N
O
R
M
A
L
I
Z
E
D
G
t
h
G
A
T
E
-
S
O
U
R
C
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
V = 10V
DS
T = -55°C
J
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
V = V
DS
GS
I = 250µA
D
40
30
20
10
0
1234
V , GATE TO SOURCE VOLTAGE (V)
GS
5
-255
T , JUNCTION TEMPERATURE (°C)
J
150175
Figure 5. Transfer 6. Gate Threshold Variation with
Temperature.
NDP6060L Rev. D / NDB6060L Rev. E
Typical Electrical Characteristics
(continued)
1.15
D
R
A
I
N
-
S
O
U
R
C
E
B
R
E
A
K
D
O
W
N
V
O
L
T
A
G
E
80
I = 250µA
D
I
,
R
E
V
E
R
S
E
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
S
1.1
10
T = 125°C
J
25°C
B
V
D
,
N
O
R
M
A
L
I
Z
E
D
S
S
1
1.05
-55°C
0.1
1
0.01
0.95
0.001
V = 0V
GS
0.40.60.811.21.41.6
V , BODY DIODE FORWARD VOLTAGE (V)
SD
1.8
0.9
-50-255
T , JUNCTION TEMPERATURE (°C)
J
150175
0.0001
0.2
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
.
4000
3000
V
G
S
,
G
A
T
E
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
)
2000
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
10
I = 48A
D
C
iss
8
V = 12V
DS
48V
24V
1000
6
500
300
200
C
oss
4
f = 1 MHz
V = 0V
GS
C
rss
3
DS
2
100
0
020
V , DRAIN TO SOURCE VOLTAGE (V)
40
Q , GATE CHARGE (nC)
g
6080
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics
.
V
DD
t
d(on)
V
IN
D
t
on
R
L
V
OUT
DUT
t
off
t
r
90%
t
d(off)
90%
t
f
V
GEN
V
OUT
R
GEN
R
GS
10%
10%
INVERTED
G
90%
S
V
IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms.
NDP6060L Rev. D / NDB6060L Rev. E
Typical Electrical Characteristics
(continued)
40
300
T = -55°C
J
g
,
T
R
A
N
S
C
O
N
D
U
C
T
A
N
C
E
(
S
I
E
M
E
N
S
)
30
200
25°C
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
100
50
R
D
S
(
O
N
i
)
L
t
m
i
1
0
1
m
0
µ
s
1
0
µ
s
125°C
20
s
20
10
5
1
0
V = 5V
GS
SINGLE PULSE
R = 1.5 C/W
JC
θ
o
D
1
0
C
m
s
s
0
m
10
F
S
V =10V
DS
0
01020
I , DRAIN CURRENT (A)
D
3040
2
1
T = 25°C
C
12351
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 13. Transconductance Variation with
Drain Current. and Temperature
Figure 14. Maximum Safe Operating. Area
1
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
0.5
0.3
0.2
0.1
0.05
0.2
0.1
P(pk)
D = 0.5
r
(
t
)
,
N
O
R
M
A
L
I
Z
E
D
E
F
F
E
C
T
I
V
E
R (t) = r(t) * R
θ
JC
θ
JC
R = 1.5 °C/W
θ
JC
0.05
0.03
0.02
0.02
0.01
Single Pulse
t
1
t
2
T - T = P * R (t)
J
C
θ
JC
Duty Cycle, D = t /t
12
0.10.20.5125
t ,TIME (ms)
1
1001000
0.01
0.010.020.05
Figure 15. Transient Thermal Response Curve.
NDP6060L Rev. D / NDB6060L Rev. E
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration: Figure 1.0
Packaging Description:
TO-220 parts are shipped normally in tube. The tube is
made of PVC plastic treated with anti-static
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugated paper. One box contains
two bags maximum (see fig. 1.0). And one or several of
these boxes are placed inside a labeled shipping box
which comes in different sizes depending on the number
of parts shipped. The other option comes in bulk as
described in the Packaging Information table. The units in
this option are placed inside a small box laid with anti-
static bubble sheet. These smaller boxes are individually
labeled and placed inside a larger box (see fig. 3.0).
These larger or intermediate boxes then will be placed
finally inside a labeled shipping box which still comes in
different sizes depending on the number of units shipped.
45 units per Tube
12 Tubes per Bag
530mm x 130mm x 83mm
Intermediate box
2 bags per Box
Conductive Plastic Bag
TO-220 Packaging
Information: Figure 2.0
TO-220 Packaging Information
Packaging Option
Packaging type
Qty per Tube/Box
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Note/Comments
Standard
(no
flow code)
Rail/Tube
45
530x130x83
1,080
1.4378
S62Z
BULK
300
114x102x51
1,500
1.4378
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
1080 units maximum
quantity per box
LOT:
CBVK741B019
QTY:
1080
NSID:
FDP7060
SPEC:
D/C1:
D9842
SPEC REV:
B2
QA REV:
FSCINT Label
(FSCINT)
TO-220 bulk Packing
Configuration: Figure 3.0
FSCINT Label
Anti-static
Bubble Sheets
530mm x 130mm x 83mm
Intermediate box
1500 units maximum
quantity per intermediate box
300 units per
EO70 box
114mm x 102mm x 51mm
EO70 Immediate Box
5 EO70 boxes per per
Intermediate Box
FSCINT Label
TO-220 Tube
Configuration: Figure 4.0
Note: All dimensions are in inches
0.123
+0.001
-0.003
0.165
0.080
0.450
±.030
1.300
±.015
0.275
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
0.032
±.003
0.160
20.000
+0.031
-0.065
0.800
0.275
August 1999, Rev. B
TO-220 Tape and Reel Data and Package Dimensions, continued
TO-220 (FS PKG Code 37)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
September 1998, Rev. A
TO-263AB/D
2
PAK Packaging
Configuration: Figure 1.0
Static Dissipative
Embossed Carrier Tape
TO-263AB/D
2
PAK Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel
Note/Comments
Standard
(no flow code)
TNR
800
13" Dia
359x359x57
800
1.4378
1.6050
L86Z
Rail/Tube
45
-
530x130x83
1,080
1.4378
-
TO-263AB/D
2
PAK Unit Orientation
359mm x 359mm x 57mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNR Label
DRYPACK Bag
TO-263AB/D
2
PAK Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
F
9835
FDB603AL
F
9835
FDB603AL
F
9835
FDB603AL
F
9835
FDB603AL
Moisture Sensitive
Label
TO-263AB/D
2
PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D
2
PAK Embossed Carrier Tape
Configuration: Figure 3.0
P0
T
D0
E1
F
K0
Wc
B0
E2
W
Tc
A0
P1
D1
User Direction of Feed
Dimensions are in millimeter
Pkg type
T
O263AB/
D
2
PAK
(24mm)
A0
10.60
+/-0.10
B0
15.80
+/-0.10
W
24.0
+/-0.3
D0
1.55
+/-0.05
D1
1.60
+/-0.10
E1
1.75
+/-0.10
E2
22.25
min
F
11.50
+/-0.10
P1
16.0
+/-0.1
P0
4.0
+/-0.1
K0
4.90
+/-0.10
T
0.450
+/-0.150
Wc
21.0
+/-0.3
Tc
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum
Typical
component
cavity
center line
0.9mm
maximum
B0
10 deg maximum component rotation
0.9mm
maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0
Sketch B (Top View)
Typical
component
center line
Sketch C (Top View)
Component lateral movement
TO-263AB/D
2
PAK Reel Configuration:
Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max
Dim N
Dim D
min
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
24mm
Reel
Option
13" Dia
Dim A
13.00
330
Dim B
0.059
1.5
Dim C
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
Dim N
4.00
100
Dim W1
0.961 +0.078/-0.000
24.4 +2/0
Dim W2
1.197
30.4
Dim W3 (LSL-USL)
0.941 – 0.1.079
23.9 – 27.4
August 1999, Rev. B
TO-263AB/D
2
PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D
2
PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
August 1998, Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
PreliminaryFirst Production
No Identification NeededFull Production
ObsoleteNot In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
2024年10月31日发(作者：候访波)
April 1996
NDP6060L / NDB6060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
48A, 60V. R
DS(ON)
= 0.025
Ω
@ V
GS
= 5V.
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP6060L
60
60
± 16
± 25
48
144
100
0.67
-65 to 175
275
NDB6060LUnits
V
V
V
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current
- Continuous
- Pulsed
A
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Temperature
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
W
W/°C
°C
°C
© 1997 Fairchild Semiconductor Corporation
NDP6060L Rev. D / NDB6060L Rev. E
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
W
DSS
I
AR
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Parameter
Single Pulse Drain-Source Avalanche
Energy
Conditions
V
DD
= 25 V, I
D
= 48 A
MinTypMax
200
48
60
T
J
= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
V
GS
= 5 V, I
D
= 24 A
T
J
= 125°C
V
GS
= 10 V, I
D
= 24 A
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 24 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
48
10
1630
460
150
2000
800
400
1
0.65
250
1
100
-100
2
1.5
0.025
0.04
0.02
A
S
pF
pF
pF
Units
mJ
A
V
µA
mA
nA
nA
V
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
OFF CHARACTERISTICS
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0 V
ON CHARACTERISTICS
(Note 1)
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 48 V,
I
D
= 48 A, V
GS
= 5 V
V
DD
= 30 V, I
D
= 48 A,
V
GS
= 5 V, R
GEN
= 15
Ω
,
R
GS
= 15
Ω
15
320
49
161
36
8.2
21
30
500
100
300
60
nS
nS
nS
nS
nC
nC
nC
NDP6060L Rev. D / NDB6060L Rev. E
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
I
S
I
SM
V
SD
ParameterConditionsMinTypMax
48
144
1.3
T
J
= 125°C
t
rr
I
rr
R
θ
JC
R
θ
JA
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
F
= 48 A,
dI
F
/dt = 100 A/µs
35
2
75
3.6
1.2
140
8
ns
A
Units
A
A
V
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward VoltageV
GS
= 0 V, I
S
= 24 A
(Note 1)
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.5
62.5
°C/W
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6060L Rev. D / NDB6060L Rev. E
Typical Electrical Characteristics
1002
V = 10V
GS
I
,
D
R
A
I
N
-
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
D
80
6.0
4.5
R
D
S
n
)
,
N
O
R
M
A
L
I
Z
E
D
(
o
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
V = 3.0V
GS
5.0
3.5
4.0
1.5
60
4.5
5.0
5.5
1
4.0
3.5
3.0
2.5
40
6.0
10
20
0
0123
V , DRAIN-SOURCE VOLTAGE (V)
DS
45
0.5
020
D
406080100
I , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
2
I = 24A
D
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
1.75
V = 5.0V
GS
1.8
1.6
1.4
1.2
1
0.8
0.6
V = 5V
GS
R
D
)
,
N
O
R
M
A
L
I
Z
E
D
S
(
o
n
T = 125°C
J
R
D
N
S
(
O
)
,
N
O
R
M
A
L
I
Z
E
D
1.5
1.25
25°C
1
0.75
-55°C
0.5
-50-255
T , JUNCTION TEMPERATURE (°C)
J
150175
I , DRAIN CURRENT (A)
D
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
60
1.3
50
I
D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
25°C
125°C
V
S
(
)
,
N
O
R
M
A
L
I
Z
E
D
G
t
h
G
A
T
E
-
S
O
U
R
C
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
V = 10V
DS
T = -55°C
J
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
V = V
DS
GS
I = 250µA
D
40
30
20
10
0
1234
V , GATE TO SOURCE VOLTAGE (V)
GS
5
-255
T , JUNCTION TEMPERATURE (°C)
J
150175
Figure 5. Transfer 6. Gate Threshold Variation with
Temperature.
NDP6060L Rev. D / NDB6060L Rev. E
Typical Electrical Characteristics
(continued)
1.15
D
R
A
I
N
-
S
O
U
R
C
E
B
R
E
A
K
D
O
W
N
V
O
L
T
A
G
E
80
I = 250µA
D
I
,
R
E
V
E
R
S
E
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
S
1.1
10
T = 125°C
J
25°C
B
V
D
,
N
O
R
M
A
L
I
Z
E
D
S
S
1
1.05
-55°C
0.1
1
0.01
0.95
0.001
V = 0V
GS
0.40.60.811.21.41.6
V , BODY DIODE FORWARD VOLTAGE (V)
SD
1.8
0.9
-50-255
T , JUNCTION TEMPERATURE (°C)
J
150175
0.0001
0.2
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
.
4000
3000
V
G
S
,
G
A
T
E
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
)
2000
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
10
I = 48A
D
C
iss
8
V = 12V
DS
48V
24V
1000
6
500
300
200
C
oss
4
f = 1 MHz
V = 0V
GS
C
rss
3
DS
2
100
0
020
V , DRAIN TO SOURCE VOLTAGE (V)
40
Q , GATE CHARGE (nC)
g
6080
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics
.
V
DD
t
d(on)
V
IN
D
t
on
R
L
V
OUT
DUT
t
off
t
r
90%
t
d(off)
90%
t
f
V
GEN
V
OUT
R
GEN
R
GS
10%
10%
INVERTED
G
90%
S
V
IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms.
NDP6060L Rev. D / NDB6060L Rev. E
Typical Electrical Characteristics
(continued)
40
300
T = -55°C
J
g
,
T
R
A
N
S
C
O
N
D
U
C
T
A
N
C
E
(
S
I
E
M
E
N
S
)
30
200
25°C
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
100
50
R
D
S
(
O
N
i
)
L
t
m
i
1
0
1
m
0
µ
s
1
0
µ
s
125°C
20
s
20
10
5
1
0
V = 5V
GS
SINGLE PULSE
R = 1.5 C/W
JC
θ
o
D
1
0
C
m
s
s
0
m
10
F
S
V =10V
DS
0
01020
I , DRAIN CURRENT (A)
D
3040
2
1
T = 25°C
C
12351
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 13. Transconductance Variation with
Drain Current. and Temperature
Figure 14. Maximum Safe Operating. Area
1
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
0.5
0.3
0.2
0.1
0.05
0.2
0.1
P(pk)
D = 0.5
r
(
t
)
,
N
O
R
M
A
L
I
Z
E
D
E
F
F
E
C
T
I
V
E
R (t) = r(t) * R
θ
JC
θ
JC
R = 1.5 °C/W
θ
JC
0.05
0.03
0.02
0.02
0.01
Single Pulse
t
1
t
2
T - T = P * R (t)
J
C
θ
JC
Duty Cycle, D = t /t
12
0.10.20.5125
t ,TIME (ms)
1
1001000
0.01
0.010.020.05
Figure 15. Transient Thermal Response Curve.
NDP6060L Rev. D / NDB6060L Rev. E
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration: Figure 1.0
Packaging Description:
TO-220 parts are shipped normally in tube. The tube is
made of PVC plastic treated with anti-static
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugated paper. One box contains
two bags maximum (see fig. 1.0). And one or several of
these boxes are placed inside a labeled shipping box
which comes in different sizes depending on the number
of parts shipped. The other option comes in bulk as
described in the Packaging Information table. The units in
this option are placed inside a small box laid with anti-
static bubble sheet. These smaller boxes are individually
labeled and placed inside a larger box (see fig. 3.0).
These larger or intermediate boxes then will be placed
finally inside a labeled shipping box which still comes in
different sizes depending on the number of units shipped.
45 units per Tube
12 Tubes per Bag
530mm x 130mm x 83mm
Intermediate box
2 bags per Box
Conductive Plastic Bag
TO-220 Packaging
Information: Figure 2.0
TO-220 Packaging Information
Packaging Option
Packaging type
Qty per Tube/Box
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Note/Comments
Standard
(no
flow code)
Rail/Tube
45
530x130x83
1,080
1.4378
S62Z
BULK
300
114x102x51
1,500
1.4378
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
1080 units maximum
quantity per box
LOT:
CBVK741B019
QTY:
1080
NSID:
FDP7060
SPEC:
D/C1:
D9842
SPEC REV:
B2
QA REV:
FSCINT Label
(FSCINT)
TO-220 bulk Packing
Configuration: Figure 3.0
FSCINT Label
Anti-static
Bubble Sheets
530mm x 130mm x 83mm
Intermediate box
1500 units maximum
quantity per intermediate box
300 units per
EO70 box
114mm x 102mm x 51mm
EO70 Immediate Box
5 EO70 boxes per per
Intermediate Box
FSCINT Label
TO-220 Tube
Configuration: Figure 4.0
Note: All dimensions are in inches
0.123
+0.001
-0.003
0.165
0.080
0.450
±.030
1.300
±.015
0.275
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
0.032
±.003
0.160
20.000
+0.031
-0.065
0.800
0.275
August 1999, Rev. B
TO-220 Tape and Reel Data and Package Dimensions, continued
TO-220 (FS PKG Code 37)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
September 1998, Rev. A
TO-263AB/D
2
PAK Packaging
Configuration: Figure 1.0
Static Dissipative
Embossed Carrier Tape
TO-263AB/D
2
PAK Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel
Note/Comments
Standard
(no flow code)
TNR
800
13" Dia
359x359x57
800
1.4378
1.6050
L86Z
Rail/Tube
45
-
530x130x83
1,080
1.4378
-
TO-263AB/D
2
PAK Unit Orientation
359mm x 359mm x 57mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNR Label
DRYPACK Bag
TO-263AB/D
2
PAK Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
F
9835
FDB603AL
F
9835
FDB603AL
F
9835
FDB603AL
F
9835
FDB603AL
Moisture Sensitive
Label
TO-263AB/D
2
PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D
2
PAK Embossed Carrier Tape
Configuration: Figure 3.0
P0
T
D0
E1
F
K0
Wc
B0
E2
W
Tc
A0
P1
D1
User Direction of Feed
Dimensions are in millimeter
Pkg type
T
O263AB/
D
2
PAK
(24mm)
A0
10.60
+/-0.10
B0
15.80
+/-0.10
W
24.0
+/-0.3
D0
1.55
+/-0.05
D1
1.60
+/-0.10
E1
1.75
+/-0.10
E2
22.25
min
F
11.50
+/-0.10
P1
16.0
+/-0.1
P0
4.0
+/-0.1
K0
4.90
+/-0.10
T
0.450
+/-0.150
Wc
21.0
+/-0.3
Tc
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum
Typical
component
cavity
center line
0.9mm
maximum
B0
10 deg maximum component rotation
0.9mm
maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0
Sketch B (Top View)
Typical
component
center line
Sketch C (Top View)
Component lateral movement
TO-263AB/D
2
PAK Reel Configuration:
Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max
Dim N
Dim D
min
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
24mm
Reel
Option
13" Dia
Dim A
13.00
330
Dim B
0.059
1.5
Dim C
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
Dim N
4.00
100
Dim W1
0.961 +0.078/-0.000
24.4 +2/0
Dim W2
1.197
30.4
Dim W3 (LSL-USL)
0.941 – 0.1.079
23.9 – 27.4
August 1999, Rev. B
TO-263AB/D
2
PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D
2
PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
August 1998, Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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PreliminaryFirst Production
No Identification NeededFull Production
ObsoleteNot In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D