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VISHAY TFBS4650 说明书

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2024年11月5日发(作者:晏实)

TFBS4650

Vishay Semiconductors

Infrared Transceiver

9.6 kbit/s to 115.2 kbit/s (SIR)

Description

The TFBS4650 is one of the smallest IrDA

®

compliant

transceivers available. It supports data rates up to

115 kbit/s. The transceiver consists of a PIN photo-

diode, infrared emitter, and control IC in a single pack-

age.

20206

Features

•Compliant with the IrDA physical layer

IrPHY 1.4 (low power specification,

9.6 kbit/s to 115.2 kbit/s)

e4

•Link distance: 30 cm/20 cm full 15°

cone

with standard or low power IrDA, respec-

tively. Emission intensity can be set by an external

resistor to increase the range for extended low

power spec to > 50 cm

•Typical transmission distance to standard device:

50 cm

•Small package -

L 6.8 mm x W 2.8 mm x H 1.6 mm

•Low current consumption

75 µA idle at 3.6 V

•Shutdown current 10 nA typical at 25 °C

•Operates from 2.4 V to 3.6 V within specification

over full temperature range from - 25 °C to + 85 °C

•Split power supply, emitter can be driven by a sep-

arate power supply not loading the regulated. U.S.

Pat. No. 6,157,476

•Lead (Pb)-free device

•Qualified for lead (Pb)-free and Sn/Pb processing

(MSL4)

•Device in accordance with RoHS 2002/95/EC and

WEEE 2002/96/EC

Applications

• Mobile phone

• PDAs

Parts Table

Part

TFBS4650-TR1

TFBS4650-TR3

Description

Oriented in carrier tape for side view surface mounting

Oriented in carrier tape for side view surface mounting

1000 pcs

2500 pcs

Qty / Reel

120

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Functional Block Diagram

V

CC

PD

Amplifier

Comparator

Tri-State

Driver

RxD

SD

TxD

ASIC

Mode

Control

IRED Driver

IREDA

IRED

IREDC

GND

19283

Pin Description

Pin Number

1

2

3

Function

IREDA

IREDC

TXD

Description

IRED Anode, connected via a current limiting resistor to V

CC2

. A separate

unregulated power supply can be used.

IRED Cathode, do not connect for standard operation

Transmitter Data Input. Setting this input above the threshold turns on the

transmitter.

This input switches the IRED with the maximum transmit pulse width of

about 50 µs.

Receiver Output. Normally high, goes low for a defined pulse duration with

the rising edge of the optical input signal. Output is a CMOS tri-state driver,

which swings between ground and V

cc

. Receiver echoes transmitter output.

Shut Down. Logic Low at this input enables the receiver, enables the

transmitter, and un-tri-states the receiver output. It must be driven high for

shutting down the transceiver.

Power Supply, 2.4 V to 3.6 V. This pin provides power for the receiver and

transmitter drive section. Connect V

CC1

via an optional filter.

Ground

IHIGH

I/OActive

4RXD

OLOW

5SD

IHIGH

6

7

V

CC

GND

Pinout

TFBS4650, bottom view

weight 0.05 g

19284

Document Number 84672

Rev. 1.1, 03-Jul-06

121

TFBS4650

Vishay Semiconductors

Absolute Maximum Ratings

Reference point Pin, GND unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameter

Supply voltage range,

transceiver

Supply voltage range,

transmitter

Voltage at RXD

Test Conditions

0 V < V

CC2

< 6 V

0 V < V

CC1

< 3.6 V

All states

Symbol

V

CC1

V

CC2

V

in

V

in

Min

- 0.5

- 0.5

- 0.5

- 0.5

- 40

6.0

6.0

V

CC

+ 0.5

6.0

40

20

P

D

T

J

T

amb

T

stg

see section Recommended

Solder Profile

< 90 µs, t

on

< 20 %I

IRED

(RP)

I

IRED

(DC)

Method: (1-1/e) encircled

energy

IEC60825-1 or

EN60825-1,

edition Jan. 2001

d

I

e

0.8

*)

Unit

V

V

V

V

mA

mA

mW

°C

°C

°C

°C

Input voltage range, transmitter Independent of V

CC1

or V

CC2

TXD

Input currents

Output sinking current

Power dissipation

Junction temperature

Ambient temperature range

(operating)

Storage temperature range

Soldering temperature ***)

Repetitive pulse output current

Average output current

(transmitter)

Virtual source size

Maximum Intensity for Class 1

For all pins, except IRED anode

pin

250

125

- 25

- 40

+ 85

+ 100

500

100

mA

mA

mm

mW/sr

(500)

**)

*)

Due to the internal limitation measures the device is a "class1" device.

IrDA specifies the max. intensity with 500 mW/sr

**)

***)

Sn/Pb-free soldering. The product passed VISHAY’s standard convection reflow profile soldering test.

Definitions:

In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:

SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhY 1.0

MIR: 576 kbit/s to 1152 kbit/s

FIR: 4 Mbit/s

VFIR: 16 Mbit/s

MIR and FIR were implemented with IrPhY 1.1, followed by IrPhY 1.2, adding the SIR Low Power Standard. IrPhY 1.3 extended the Low

Power Option to MIR and FIR and VFIR was added with IrPhY 1.4. A new version of the standard in any case obsoletes the former version.

122

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Electrical Characteristics

Transceiver

T

amb

= 25°C, V

CC

= 2.4 V to 3.6 V unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameter

Supply voltage range

Dynamic supply current

Idle, dark ambientSD = Low (< 0.8 V),

E

eamb

= 0 klx,

E

e

< 4 mW/m

2

- 25 °C ≤ T ≤ + 85 °C

Idle, dark ambientSD = Low (< 0.8 V),

E

eamb

= 0 klx,

E

e

< 4 mW/m

2

T = + 25 °C

Peak supply current during

transmission

Shutdown supply current

dark ambient

Shutdown supply current, dark

ambient

Operating temperature range

Input voltage low (TXD, SD)

Input voltage high

Input voltage threshold SD

Output voltage low

Output voltage high

RXD to V

CC

pull-up impedance

Input capacitance

(TXD, SD)

V

CC

= 2.4 V to 3.6 V

V

CC

= 2.4 V to 3.6 V

V

CC

= 2.4 V to 3.6 V

CLOAD = 15 pF

V

CC

= 2.4 V to 3.6 V

C

LOAD

= 15 pF

SD = V

CC

V

CC

= 2.4 V to 5 V

V

OL

V

OH

R

RXD

C

I

SD = Low, TXD = High

SD = High

(> V

CC

- 0.5 V),

T = 25 °C, Ee = 0 klx

SD = High

(> V

CC

- 0.5 V),

- 25 °C ≤ T ≤ + 85 °C

I

ccpk

I

SD

23

0.1

mA

µA

I

CC

75µA

I

CC

90130µA

Test ConditionsSymbol

V

CC

Min

2.4

3.6

Unit

V

I

SD

1.0µA

T

A

V

IL

V

IH

- 25

- 0.5

V

CC

- 0.5

0.9

- 0.5

V

CC

x 0.8

500

1.35

+ 85

0.5

6.0

1.8

V

CC

x 0.15

V

CC

+ 0.5

°C

V

V

V

V

V

6pF

Document Number 84672

Rev. 1.1, 03-Jul-06

123

TFBS4650

Vishay Semiconductors

Optoelectronic Characteristics

Receiver

T

amb

= 25°C, V

CC

= 2.4 V to 3.6 V unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameter

Sensitivity:

Minimum irradiance Ee in

angular range *)**)

Maximum irradiance Ee in

angular range ***)

No receiver output input

irradiance

Rise time of output signal

Fall time of output signal

RXD pulse width of output

signal, 50%****)

Receiver start up time

Latency

*)

Test Conditions

9.6 kbit/s to 115.2 kbit/s

λ = 850 nm to 900 nm

λ = 850 nm to 900 nm

According to IrDA IrPHY 1.4,

Appendix A1, fluorescent light

specification

10 % to 90 %, C

L

= 15 pF

90 % to 10 %, C

L

= 15 pF

Input pulse width

1.63 µs

Power on delay

Symbol

E

e

MinTyp.

40

(4.0)

Max

81

(8.1)

Unit

mW/m

2

(µW/cm

2

)

kW/m

2

(mW/cm

2

)

mW/m

2

(µW/cm

2

)

E

e

E

e

5

(500)

4

(0.4)

20

20

1.72.0

100

100

100

2.9

150

200

t

r (RXD)

t

f (RXD)

t

PW

ns

ns

µs

µs

µst

L

50

This parameter reflects the backlight test of the IrDA physical layer specification to guarantee immunity against light from fluorescent

lamps

IrDA sensitivity definition: Minimum Irradiance E

e

In Angular Range, power per unit area. The receiver must meet the BER specification

while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length

Maximum Irradiance E

e

In Angular Range, power per unit area. The optical delivered to the detector by a source operating at the max-

imum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link errors. If

placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification.

****)

RXD output is edge triggered by the rising edge of the optical input signal. The output pulse duration is independent of the input pulse

***)

**)

duration.

For more definitions see the document “Symbols and Terminology” on the Vishay Website (/docs/82512/).

124

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Transmitter

T

amb

= 25°C, V

CC

= 2.4 V to 3.6 V unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

ParameterTest ConditionsSymbol

I

D

Min

200

400

Unit

mAIRED operating current, current The IRED current is internally

controlledcontrolled but also can be

reduced by an external resistor

R1

Output leakage IRED current

Output radiant intensity *)

Tamb = 85°C

α = 0°, 15°, TXD = High, SD =

Low, V

CC1

= 3.0 V, V

CC2

= 3.0 V,

R1 = 30 Ω (resulting in about

50 mA drive current)

α = 0°, 15°, TXD = High, SD =

Low, V

CC1

= 3.0 V, V

CC2

= 3.0 V,

R1 = 0 Ω, If = 300 mA

V

CC1

= 5.0 V, α = 0°, 15°

TXD = Low or SD = High

(Receiver is inactive as long as

SD = High)

V

CC

= 3.0 V, If = 50 mA

I

IRED

I

e

4

1

150

µA

mW/sr

Output radiant intensity *)

I

e

25mW/sr

Output radiant intensity *)I

e

0.04mW/sr

Saturation voltage of IRED

driver

Peak - emission wavelength

Optical rise time,

Optical fall time

Optical output pulse duration

Optical output pulse duration

Optical overshoot

*)

V

CEsat

λ

p

t

ropt

,

t

fopt

880

20

0.4

886900

100

t

50

1.61

V

nm

ns

µs

µs

µs

%

Input pulse width t < 30 µs

Input pulse width t ≥ 30 µs

Input pulse width t = 1.63 µs

t

opt

t

opt

t

opt

30

1.45

300

2.2

20

The radiant intensity can be adjusted by the external current limiting resistor to adapt the intensity to the desired value. The given value

is for minimum current consumption. This transceiver can be adapted to > 50 cm operation by increasing the current to > 200 mA, e.g.

operating the transceiver without current control resistor (i.e. R1 = 0 Ω) and using the internal current control.

Table 1.

Truth table

Inputs

SD

high

low

low

low

low

low

TXD

x

high

high > 50 µs

low

low

low

Optical input Irradiance mW/m

2

x

x

x

< 4

> Min. irradiance E

e

< Max. irradiance E

e

> Max. irradiance E

e

RXD

Tri-state floating with a weak

pull-up to the supply voltage

low (echo on)

high

low (active)

x

Outputs

Transmitter

0

I

e

0

0

0

high 0

Document Number 84672

Rev. 1.1, 03-Jul-06

125

TFBS4650

Vishay Semiconductors

Recommended Circuit Diagram

Operated at a clean low impedance power supply the

TFBS4650 needs only one additional external com-

ponent when the IRED drive current should be mini-

mized for minimum current consumption according

the low power IrDA standard. When combined opera-

tion in IrDA and Remote Control is intended no cur-

rent limiting resistor is recommended.

However, depending on the entire system design and

board layout, additional components may be required

(see figure 1). When long wires are used for bench

tests, the capacitors are mandatory for testing rise/fall

time correctly.

recommended to position C2 as close as possible to

the transceiver power supply pins.

When connecting the described circuit to the power

supply, low impedance wiring should be used.

In case of extended wiring the inductance of the

power supply can cause dynamically a voltage drop

at V

CC2

. Often some power supplies are not able to

follow the fast current is rise time. In that case another

10 µF cap at V

CC2

will be helpful.

Keep in mind that basic RF-design rules for circuit

design should be taken into account. Especially

longer signal lines should not be used without termina-

tion. "The Art of Electronics" Paul Horowitz,

Wienfield Hill, 1989, Cambridge University Press,

ISBN: .

V

CC2

V

CC1

GND

SD

Txd

Rxd

R1

R2

C2

IRED Anode

IRED Cathode

V

CC

Ground

SD

Txd

Rxd

C1

Table 2.

Recommended Application Circuit Components

Component

C1, C2

R1

R2

19286

Recommended Value

0.1 µF, Ceramic Vishay part#

VJ 1206 Y 104 J XXMT

See table 3

47 Ω, 0.125 W (V

CC1

= 3 V)

Figure1. Recommended Application Circuit

Table 3.

Recommended resistor R1 [Ω]

V

CC2

[V]

2.7

3.0

3.3

Minimized current consumption,

IrDA Low power compliant

24

30

36

The capacitor C1 is buffering the supply voltage V

cc2

and eliminates the inductance of the power supply

line. This one should be a small ceramic version or

other fast capacitor to guarantee the fast rise time of

the IRED current. The resistor R1 is necessary for

controlling the IRED drive current when the internally

controlled current is too high for the application.

Vishay transceivers integrate a sensitive receiver and

a built-in power driver. The combination of both needs

a careful circuit board layout. The use of thin, long,

resistive and inductive wiring should be avoided. The

inputs (TXD, SD) and the output RXD should be

directly (DC) coupled to the I/O circuit.

The capacitor C2 combined with the resistor R2 is the

low pass filter for smoothing the supply voltage.

As already stated above R2, C1 and C2 are optional

and depend on the quality of the supply voltages V

CCx

and injected noise. An unstable power supply with

dropping voltage during transmission may reduce the

sensitivity (and transmission range) of the trans-

ceiver.

The placement of these parts is critical. It is strongly

126

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Recommended Solder Profiles

Solder Profile for Sn/Pb soldering

Manual Soldering

Manual soldering is the standard method for lab use.

However, for a production process it cannot be rec-

ommended because the risk of damage is highly

dependent on the experience of the operator. Never-

theless, we added a chapter to the above mentioned

application note, describing manual soldering and

desoldering.

Storage

The storage and drying processes for all VISHAY

transceivers (TFDUxxxx and TFBSxxx) are equiva-

lent to MSL4.

The data for the drying procedure is given on labels

on the packing and also in the application note

"Taping, Labeling, Storage and Packing"

(/docs/82601/).

260

240

220

200

180

10 s max. at 230 °C

240 °C max.

2...4 °C/s

160 °C max.

T

e

m

p

e

r

a

t

u

r

e

/

°

C

160

140

120

100

80

60

40

20

0

0 50 100 150 200 250 300 350

180 s

90 s max.

2...4 °C/s

Time/s

19431

Figure2. Recommended Solder Profile for Sn/Pb soldering

Lead (Pb)-Free, Recommended Solder Profile

The TFBS4650 is a lead (Pb)-free transceiver and

qualified for lead (Pb)-free processing. For lead

(Pb)-free solder paste like Sn(3.0-4.0)Ag(0.5-0.9)Cu,

there are two standard reflow profiles: Ramp-Soak-

Spike (RSS) and Ramp-To-Spike (RTS). The Ramp-

Soak-Spike profile was developed primarily for reflow

ovens heated by infrared radiation. With widespread

use of forced convection reflow ovens the Ramp-To-

Spike profile is used increasingly. Shown below in fig-

ure 3 is VISHAY's recommended profiles for use with

the TFBS4650 transceivers. For more details please

refer to Application note: SMD Assembly Instruction.

Wave Soldering

For TFDUxxxx and TFBSxxxx transceiver devices

wave soldering is not recommended.

280

260

240

220

200

180

T

e

m

p

e

r

a

t

u

r

e

/

°

C

160

140

120

100

80

60

40

20

0

0

T

255 °C for 20 s max

T

peak

= 260 °C max.

T

217 °C for 50 s max

20 s

120 s

50 s max.

2 °C...4 °C/s

2 °C...4 °C/s

50100150

Time/s

2

Figure3. Solder Profile, RSS Recommendation

Document Number 84672

Rev. 1.1, 03-Jul-06

127

TFBS4650

Vishay Semiconductors

Package Dimensions

19322

Figure4. TFBS4650 mechanical dimensions, tolerance ± 0.2 mm, if not otherwise mentioned

19729

Figure5. TFBS4650 soldering footprint, tolerance ± 0.2 mm, if not otherwise mentioned

128

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Reel Dimensions

Drawing-No.: 9.800-5090.01-4

Issue: 1; 29.11.05

14017

Tape Width

mm

16

A max.

mm

330

N

mm

50

W

1

min.

mm

16.4

W

2

max.

mm

22.4

W

3

min.

mm

15.9

W

3

max.

mm

19.4

Document Number 84672

Rev. 1.1, 03-Jul-06

129

TFBS4650

Vishay Semiconductors

Tape Dimensions in mm

19783

130

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

all present and future national and international statutory requirements.

rly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

l Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

131

Document Number 84672

Rev. 1.1, 03-Jul-06

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

1

2024年11月5日发(作者:晏实)

TFBS4650

Vishay Semiconductors

Infrared Transceiver

9.6 kbit/s to 115.2 kbit/s (SIR)

Description

The TFBS4650 is one of the smallest IrDA

®

compliant

transceivers available. It supports data rates up to

115 kbit/s. The transceiver consists of a PIN photo-

diode, infrared emitter, and control IC in a single pack-

age.

20206

Features

•Compliant with the IrDA physical layer

IrPHY 1.4 (low power specification,

9.6 kbit/s to 115.2 kbit/s)

e4

•Link distance: 30 cm/20 cm full 15°

cone

with standard or low power IrDA, respec-

tively. Emission intensity can be set by an external

resistor to increase the range for extended low

power spec to > 50 cm

•Typical transmission distance to standard device:

50 cm

•Small package -

L 6.8 mm x W 2.8 mm x H 1.6 mm

•Low current consumption

75 µA idle at 3.6 V

•Shutdown current 10 nA typical at 25 °C

•Operates from 2.4 V to 3.6 V within specification

over full temperature range from - 25 °C to + 85 °C

•Split power supply, emitter can be driven by a sep-

arate power supply not loading the regulated. U.S.

Pat. No. 6,157,476

•Lead (Pb)-free device

•Qualified for lead (Pb)-free and Sn/Pb processing

(MSL4)

•Device in accordance with RoHS 2002/95/EC and

WEEE 2002/96/EC

Applications

• Mobile phone

• PDAs

Parts Table

Part

TFBS4650-TR1

TFBS4650-TR3

Description

Oriented in carrier tape for side view surface mounting

Oriented in carrier tape for side view surface mounting

1000 pcs

2500 pcs

Qty / Reel

120

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Functional Block Diagram

V

CC

PD

Amplifier

Comparator

Tri-State

Driver

RxD

SD

TxD

ASIC

Mode

Control

IRED Driver

IREDA

IRED

IREDC

GND

19283

Pin Description

Pin Number

1

2

3

Function

IREDA

IREDC

TXD

Description

IRED Anode, connected via a current limiting resistor to V

CC2

. A separate

unregulated power supply can be used.

IRED Cathode, do not connect for standard operation

Transmitter Data Input. Setting this input above the threshold turns on the

transmitter.

This input switches the IRED with the maximum transmit pulse width of

about 50 µs.

Receiver Output. Normally high, goes low for a defined pulse duration with

the rising edge of the optical input signal. Output is a CMOS tri-state driver,

which swings between ground and V

cc

. Receiver echoes transmitter output.

Shut Down. Logic Low at this input enables the receiver, enables the

transmitter, and un-tri-states the receiver output. It must be driven high for

shutting down the transceiver.

Power Supply, 2.4 V to 3.6 V. This pin provides power for the receiver and

transmitter drive section. Connect V

CC1

via an optional filter.

Ground

IHIGH

I/OActive

4RXD

OLOW

5SD

IHIGH

6

7

V

CC

GND

Pinout

TFBS4650, bottom view

weight 0.05 g

19284

Document Number 84672

Rev. 1.1, 03-Jul-06

121

TFBS4650

Vishay Semiconductors

Absolute Maximum Ratings

Reference point Pin, GND unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameter

Supply voltage range,

transceiver

Supply voltage range,

transmitter

Voltage at RXD

Test Conditions

0 V < V

CC2

< 6 V

0 V < V

CC1

< 3.6 V

All states

Symbol

V

CC1

V

CC2

V

in

V

in

Min

- 0.5

- 0.5

- 0.5

- 0.5

- 40

6.0

6.0

V

CC

+ 0.5

6.0

40

20

P

D

T

J

T

amb

T

stg

see section Recommended

Solder Profile

< 90 µs, t

on

< 20 %I

IRED

(RP)

I

IRED

(DC)

Method: (1-1/e) encircled

energy

IEC60825-1 or

EN60825-1,

edition Jan. 2001

d

I

e

0.8

*)

Unit

V

V

V

V

mA

mA

mW

°C

°C

°C

°C

Input voltage range, transmitter Independent of V

CC1

or V

CC2

TXD

Input currents

Output sinking current

Power dissipation

Junction temperature

Ambient temperature range

(operating)

Storage temperature range

Soldering temperature ***)

Repetitive pulse output current

Average output current

(transmitter)

Virtual source size

Maximum Intensity for Class 1

For all pins, except IRED anode

pin

250

125

- 25

- 40

+ 85

+ 100

500

100

mA

mA

mm

mW/sr

(500)

**)

*)

Due to the internal limitation measures the device is a "class1" device.

IrDA specifies the max. intensity with 500 mW/sr

**)

***)

Sn/Pb-free soldering. The product passed VISHAY’s standard convection reflow profile soldering test.

Definitions:

In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:

SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhY 1.0

MIR: 576 kbit/s to 1152 kbit/s

FIR: 4 Mbit/s

VFIR: 16 Mbit/s

MIR and FIR were implemented with IrPhY 1.1, followed by IrPhY 1.2, adding the SIR Low Power Standard. IrPhY 1.3 extended the Low

Power Option to MIR and FIR and VFIR was added with IrPhY 1.4. A new version of the standard in any case obsoletes the former version.

122

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Electrical Characteristics

Transceiver

T

amb

= 25°C, V

CC

= 2.4 V to 3.6 V unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameter

Supply voltage range

Dynamic supply current

Idle, dark ambientSD = Low (< 0.8 V),

E

eamb

= 0 klx,

E

e

< 4 mW/m

2

- 25 °C ≤ T ≤ + 85 °C

Idle, dark ambientSD = Low (< 0.8 V),

E

eamb

= 0 klx,

E

e

< 4 mW/m

2

T = + 25 °C

Peak supply current during

transmission

Shutdown supply current

dark ambient

Shutdown supply current, dark

ambient

Operating temperature range

Input voltage low (TXD, SD)

Input voltage high

Input voltage threshold SD

Output voltage low

Output voltage high

RXD to V

CC

pull-up impedance

Input capacitance

(TXD, SD)

V

CC

= 2.4 V to 3.6 V

V

CC

= 2.4 V to 3.6 V

V

CC

= 2.4 V to 3.6 V

CLOAD = 15 pF

V

CC

= 2.4 V to 3.6 V

C

LOAD

= 15 pF

SD = V

CC

V

CC

= 2.4 V to 5 V

V

OL

V

OH

R

RXD

C

I

SD = Low, TXD = High

SD = High

(> V

CC

- 0.5 V),

T = 25 °C, Ee = 0 klx

SD = High

(> V

CC

- 0.5 V),

- 25 °C ≤ T ≤ + 85 °C

I

ccpk

I

SD

23

0.1

mA

µA

I

CC

75µA

I

CC

90130µA

Test ConditionsSymbol

V

CC

Min

2.4

3.6

Unit

V

I

SD

1.0µA

T

A

V

IL

V

IH

- 25

- 0.5

V

CC

- 0.5

0.9

- 0.5

V

CC

x 0.8

500

1.35

+ 85

0.5

6.0

1.8

V

CC

x 0.15

V

CC

+ 0.5

°C

V

V

V

V

V

6pF

Document Number 84672

Rev. 1.1, 03-Jul-06

123

TFBS4650

Vishay Semiconductors

Optoelectronic Characteristics

Receiver

T

amb

= 25°C, V

CC

= 2.4 V to 3.6 V unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameter

Sensitivity:

Minimum irradiance Ee in

angular range *)**)

Maximum irradiance Ee in

angular range ***)

No receiver output input

irradiance

Rise time of output signal

Fall time of output signal

RXD pulse width of output

signal, 50%****)

Receiver start up time

Latency

*)

Test Conditions

9.6 kbit/s to 115.2 kbit/s

λ = 850 nm to 900 nm

λ = 850 nm to 900 nm

According to IrDA IrPHY 1.4,

Appendix A1, fluorescent light

specification

10 % to 90 %, C

L

= 15 pF

90 % to 10 %, C

L

= 15 pF

Input pulse width

1.63 µs

Power on delay

Symbol

E

e

MinTyp.

40

(4.0)

Max

81

(8.1)

Unit

mW/m

2

(µW/cm

2

)

kW/m

2

(mW/cm

2

)

mW/m

2

(µW/cm

2

)

E

e

E

e

5

(500)

4

(0.4)

20

20

1.72.0

100

100

100

2.9

150

200

t

r (RXD)

t

f (RXD)

t

PW

ns

ns

µs

µs

µst

L

50

This parameter reflects the backlight test of the IrDA physical layer specification to guarantee immunity against light from fluorescent

lamps

IrDA sensitivity definition: Minimum Irradiance E

e

In Angular Range, power per unit area. The receiver must meet the BER specification

while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length

Maximum Irradiance E

e

In Angular Range, power per unit area. The optical delivered to the detector by a source operating at the max-

imum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link errors. If

placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification.

****)

RXD output is edge triggered by the rising edge of the optical input signal. The output pulse duration is independent of the input pulse

***)

**)

duration.

For more definitions see the document “Symbols and Terminology” on the Vishay Website (/docs/82512/).

124

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Transmitter

T

amb

= 25°C, V

CC

= 2.4 V to 3.6 V unless otherwise noted.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

ParameterTest ConditionsSymbol

I

D

Min

200

400

Unit

mAIRED operating current, current The IRED current is internally

controlledcontrolled but also can be

reduced by an external resistor

R1

Output leakage IRED current

Output radiant intensity *)

Tamb = 85°C

α = 0°, 15°, TXD = High, SD =

Low, V

CC1

= 3.0 V, V

CC2

= 3.0 V,

R1 = 30 Ω (resulting in about

50 mA drive current)

α = 0°, 15°, TXD = High, SD =

Low, V

CC1

= 3.0 V, V

CC2

= 3.0 V,

R1 = 0 Ω, If = 300 mA

V

CC1

= 5.0 V, α = 0°, 15°

TXD = Low or SD = High

(Receiver is inactive as long as

SD = High)

V

CC

= 3.0 V, If = 50 mA

I

IRED

I

e

4

1

150

µA

mW/sr

Output radiant intensity *)

I

e

25mW/sr

Output radiant intensity *)I

e

0.04mW/sr

Saturation voltage of IRED

driver

Peak - emission wavelength

Optical rise time,

Optical fall time

Optical output pulse duration

Optical output pulse duration

Optical overshoot

*)

V

CEsat

λ

p

t

ropt

,

t

fopt

880

20

0.4

886900

100

t

50

1.61

V

nm

ns

µs

µs

µs

%

Input pulse width t < 30 µs

Input pulse width t ≥ 30 µs

Input pulse width t = 1.63 µs

t

opt

t

opt

t

opt

30

1.45

300

2.2

20

The radiant intensity can be adjusted by the external current limiting resistor to adapt the intensity to the desired value. The given value

is for minimum current consumption. This transceiver can be adapted to > 50 cm operation by increasing the current to > 200 mA, e.g.

operating the transceiver without current control resistor (i.e. R1 = 0 Ω) and using the internal current control.

Table 1.

Truth table

Inputs

SD

high

low

low

low

low

low

TXD

x

high

high > 50 µs

low

low

low

Optical input Irradiance mW/m

2

x

x

x

< 4

> Min. irradiance E

e

< Max. irradiance E

e

> Max. irradiance E

e

RXD

Tri-state floating with a weak

pull-up to the supply voltage

low (echo on)

high

low (active)

x

Outputs

Transmitter

0

I

e

0

0

0

high 0

Document Number 84672

Rev. 1.1, 03-Jul-06

125

TFBS4650

Vishay Semiconductors

Recommended Circuit Diagram

Operated at a clean low impedance power supply the

TFBS4650 needs only one additional external com-

ponent when the IRED drive current should be mini-

mized for minimum current consumption according

the low power IrDA standard. When combined opera-

tion in IrDA and Remote Control is intended no cur-

rent limiting resistor is recommended.

However, depending on the entire system design and

board layout, additional components may be required

(see figure 1). When long wires are used for bench

tests, the capacitors are mandatory for testing rise/fall

time correctly.

recommended to position C2 as close as possible to

the transceiver power supply pins.

When connecting the described circuit to the power

supply, low impedance wiring should be used.

In case of extended wiring the inductance of the

power supply can cause dynamically a voltage drop

at V

CC2

. Often some power supplies are not able to

follow the fast current is rise time. In that case another

10 µF cap at V

CC2

will be helpful.

Keep in mind that basic RF-design rules for circuit

design should be taken into account. Especially

longer signal lines should not be used without termina-

tion. "The Art of Electronics" Paul Horowitz,

Wienfield Hill, 1989, Cambridge University Press,

ISBN: .

V

CC2

V

CC1

GND

SD

Txd

Rxd

R1

R2

C2

IRED Anode

IRED Cathode

V

CC

Ground

SD

Txd

Rxd

C1

Table 2.

Recommended Application Circuit Components

Component

C1, C2

R1

R2

19286

Recommended Value

0.1 µF, Ceramic Vishay part#

VJ 1206 Y 104 J XXMT

See table 3

47 Ω, 0.125 W (V

CC1

= 3 V)

Figure1. Recommended Application Circuit

Table 3.

Recommended resistor R1 [Ω]

V

CC2

[V]

2.7

3.0

3.3

Minimized current consumption,

IrDA Low power compliant

24

30

36

The capacitor C1 is buffering the supply voltage V

cc2

and eliminates the inductance of the power supply

line. This one should be a small ceramic version or

other fast capacitor to guarantee the fast rise time of

the IRED current. The resistor R1 is necessary for

controlling the IRED drive current when the internally

controlled current is too high for the application.

Vishay transceivers integrate a sensitive receiver and

a built-in power driver. The combination of both needs

a careful circuit board layout. The use of thin, long,

resistive and inductive wiring should be avoided. The

inputs (TXD, SD) and the output RXD should be

directly (DC) coupled to the I/O circuit.

The capacitor C2 combined with the resistor R2 is the

low pass filter for smoothing the supply voltage.

As already stated above R2, C1 and C2 are optional

and depend on the quality of the supply voltages V

CCx

and injected noise. An unstable power supply with

dropping voltage during transmission may reduce the

sensitivity (and transmission range) of the trans-

ceiver.

The placement of these parts is critical. It is strongly

126

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Recommended Solder Profiles

Solder Profile for Sn/Pb soldering

Manual Soldering

Manual soldering is the standard method for lab use.

However, for a production process it cannot be rec-

ommended because the risk of damage is highly

dependent on the experience of the operator. Never-

theless, we added a chapter to the above mentioned

application note, describing manual soldering and

desoldering.

Storage

The storage and drying processes for all VISHAY

transceivers (TFDUxxxx and TFBSxxx) are equiva-

lent to MSL4.

The data for the drying procedure is given on labels

on the packing and also in the application note

"Taping, Labeling, Storage and Packing"

(/docs/82601/).

260

240

220

200

180

10 s max. at 230 °C

240 °C max.

2...4 °C/s

160 °C max.

T

e

m

p

e

r

a

t

u

r

e

/

°

C

160

140

120

100

80

60

40

20

0

0 50 100 150 200 250 300 350

180 s

90 s max.

2...4 °C/s

Time/s

19431

Figure2. Recommended Solder Profile for Sn/Pb soldering

Lead (Pb)-Free, Recommended Solder Profile

The TFBS4650 is a lead (Pb)-free transceiver and

qualified for lead (Pb)-free processing. For lead

(Pb)-free solder paste like Sn(3.0-4.0)Ag(0.5-0.9)Cu,

there are two standard reflow profiles: Ramp-Soak-

Spike (RSS) and Ramp-To-Spike (RTS). The Ramp-

Soak-Spike profile was developed primarily for reflow

ovens heated by infrared radiation. With widespread

use of forced convection reflow ovens the Ramp-To-

Spike profile is used increasingly. Shown below in fig-

ure 3 is VISHAY's recommended profiles for use with

the TFBS4650 transceivers. For more details please

refer to Application note: SMD Assembly Instruction.

Wave Soldering

For TFDUxxxx and TFBSxxxx transceiver devices

wave soldering is not recommended.

280

260

240

220

200

180

T

e

m

p

e

r

a

t

u

r

e

/

°

C

160

140

120

100

80

60

40

20

0

0

T

255 °C for 20 s max

T

peak

= 260 °C max.

T

217 °C for 50 s max

20 s

120 s

50 s max.

2 °C...4 °C/s

2 °C...4 °C/s

50100150

Time/s

2

Figure3. Solder Profile, RSS Recommendation

Document Number 84672

Rev. 1.1, 03-Jul-06

127

TFBS4650

Vishay Semiconductors

Package Dimensions

19322

Figure4. TFBS4650 mechanical dimensions, tolerance ± 0.2 mm, if not otherwise mentioned

19729

Figure5. TFBS4650 soldering footprint, tolerance ± 0.2 mm, if not otherwise mentioned

128

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Reel Dimensions

Drawing-No.: 9.800-5090.01-4

Issue: 1; 29.11.05

14017

Tape Width

mm

16

A max.

mm

330

N

mm

50

W

1

min.

mm

16.4

W

2

max.

mm

22.4

W

3

min.

mm

15.9

W

3

max.

mm

19.4

Document Number 84672

Rev. 1.1, 03-Jul-06

129

TFBS4650

Vishay Semiconductors

Tape Dimensions in mm

19783

130

Document Number 84672

Rev. 1.1, 03-Jul-06

TFBS4650

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

all present and future national and international statutory requirements.

rly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

l Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

131

Document Number 84672

Rev. 1.1, 03-Jul-06

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

1

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