2024年2月16日发(作者：力迎南)

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power TransistorSS*07N60S

September, 2013SJ-FETSST07N60S / SSF07N60S600V N-Channel MOSFETDescriptionSJ-FET is new generation of high voltage MOSFET family thatis utilizing an advanced charge balance mechanism for outstdandinglow on-resistance and lower gate charge advanced technology has been tailored to minimize conductionloss, provide superior switching performance, and withstandextreme dv/dtrate and higher avalanche -FET is suitable for various AC/DC power conversion inswitching mode operation for higher 07N60S / SSF07N60S 600V N-Channel MOSFETFeatures• 650V @TJ = 150 ℃• Typ. RDS(on) = 0.54Ω• Ultra Low Gate Charge (typ. Qg= 9nC)• 100% avalanche testedTO-252E-2Absolute Maximum RatingsSymbol

VDSSIDIDMVGSSEASIAREARdv/dtPDTJ, SSTGTLParameterDrain-Source VoltageDrain Current -Continuous (TC = 25℃)

-Continuous (TC = 100℃)Drain Current -Pulsed (Note 1)Gate-Source voltageSingle Pulsed Avalanche Energy (Note 2)Avalanche Current (Note 1)Repetitive Avalanche Energy (Note 1)Peak Diode Recovery dv/dt(Note 3)Power Dissipation (TC = 25℃)

-Derateabove 25℃Operating and Storage Temperature RangeMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 SecondsSST07N60S6007

511±30861.743SSF07N60S

7*

5*11*UnitVAAVmJAmJV/nsW

W/℃℃℃4.583

0.8-55 to +15030035

0.3* Drain current limited by maximum junction l CharacteristicsSymbol

RθJCRθCSRθJAParameterThermal Resistance, Junction-to-CaseThermal Resistance, Case-to-Sink l Resistance, Junction-to-AmbientSST07N60S1.20.562SSF07N60S

5--62Unit℃/W℃/W℃/W©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Electrical Characteristics TC = 25℃unless otherwise notedSST07N60S / SSF07N60S 600V N-Channel MOSFETSymbol

Off Characteristics

BVDSS

ΔBVDSS

/ ΔTJ

IDSS

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Conditions

VGS= 0V, ID= 250µA, TJ= 25℃VGS= 0V, ID= 250µA, TJ= 150℃ID= 250µA, Referenced to 25℃VDS= 600V, VGS= 0V VDS= 480V,

TC= 125℃VGS= 30V, VDS= 0V

VGS= -30V, VDS= 0V

Min

600

----------2.5

----------------------------------Typ

--650

0.6

------3.50.5816

36025

1.225

55

70

40

82.02.7

------1902.3

Max

------1

10

100

-100

4.5

0.65------Unit

V

V

V/℃µA

µA

nA

nA

V

ΩS

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

A

V

ns

µC

Gate-Body Leakage Current, Forward

IGSSF

Gate-Body Leakage Current, Reverse

IGSSR

On Characteristics

VGS(th)

Gate Threshold Voltage VDS= VGS, ID= 250µA

RDS(on)

Static Drain-Source On-Resistance VGS= 10V, ID= 3.5A

gFS

Forward Transconductance VDS= 40V, ID=3.5A

(Note 4)

Dynamic Characteristics

Ciss

Input Capacitance VDS= 25V, VGS= 0V, f = 1.0MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching Characteristics

td(on)

Turn-On Delay Time VDD

= 400V, ID= 3.5A RG= 20Ω(Note

4, 5)

Turn-On Rise Time

tr

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

tf

Total Gate Charge VDS= 480V, ID= 3.5A VGS= 10V

Qg

(Note 4, 5)

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

ISM

Drain-Source Diode Forward Voltage VGS= 0V, IS= 7A

VSD

Reverse Recovery Time VGS= 0V, IS= 7A dIF/dt=100A/µs

trr

(Note 4)

Reverse Recovery Charge

Qrr

----------------7

18

1.5

----NOTES:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25 ℃3. ISD≤7A, di/dt≤ 200A/us, VDD

≤ BVDSS, Starting TJ = 25 ℃4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical Characteristics©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Typical Performance CharacteristicsSST07N60S / SSF07N60S 600V N-Channel MOSFETVDS(V)Figure 1: On-Region Characteristics@25°CVDS(V)Figure 1: On-Region Characteristics@125°CVGS(V)Figure 3: Transfer CharacteristicsID(A)Figure 4: On-Resistance vs. Drain Current and Gate VoltageTemperature (°C)Figure 5: On-Resistance vs. Junction TemperatureTJ(°C)Figure 6: Break Down vs. Junction Temperature©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Typical Performance CharacteristicsSST07N60S / SSF07N60S 600V N-Channel MOSFETVSD(V)Figure 7: Body-Diode Characteristics

Qg(nC)Figure 8: Gate-Charge CharacteristicsVDS(V)Figure 9: Capacitance CharacteristicsVDS

(V)Figure 10: Cossstored EnergyVDS(V)Figure 11: Maximum Forward Biased SafeOperating Area

©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Typical Performance CharacteristicsSST07N60S / SSF07N60S 600V N-Channel MOSFETPulse Width (s)Figure 12: Normalized Maximum Transient Thermal ImpedanceTCASE(°C)Figure 13: Avalanche energyTCASE

(°C)Figure 14: Current De-rating©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Typical Performance CharacteristicsSST07N60S / SSF07N60S 600V N-Channel MOSFETPulse Width (s)Figure 15: Normalized Maximum Transient Thermal Impedance©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Test circuitsSwitching times test circuit and waveform for inductive loadSwitching times test circuit for inductive loadSwitching time waveformSST07N60S/SSF07N60S 600V N-Channel MOSFETSwitching times test circuit for

inductive loadUnclamped inductive load test circuit and waveformUnclamped inductive load test circuitUnclamped inductive waveform©2012 Super Semiconductor Corporation

SST07N60S/SSF07N60S Rev.1.0

Test circuitsTest circuit and waveform for diode characteristicsTest circuit for diode characteristicsDiode recovery waveformSST07N60S/SSF07N60S 600V N-Channel MOSFET©2012 Super Semiconductor Corporation

SST07N60S/SSF07N60S Rev.1.0

PKG TO-220FullPAKSST07N60S/SSF07N60S 600V N-Channel MOSFET©2012 Super Semiconductor Corporation

SST07N60S/SSF07N60S Rev.1.0

PKG TO-252SST07N60S/SSF07N60S 600V N-Channel MOSFET©2012 Super Semiconductor Corporation

SST07N60S/SSF07N60S Rev.1.0

2024年2月16日发(作者：力迎南)

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power TransistorSS*07N60S

September, 2013SJ-FETSST07N60S / SSF07N60S600V N-Channel MOSFETDescriptionSJ-FET is new generation of high voltage MOSFET family thatis utilizing an advanced charge balance mechanism for outstdandinglow on-resistance and lower gate charge advanced technology has been tailored to minimize conductionloss, provide superior switching performance, and withstandextreme dv/dtrate and higher avalanche -FET is suitable for various AC/DC power conversion inswitching mode operation for higher 07N60S / SSF07N60S 600V N-Channel MOSFETFeatures• 650V @TJ = 150 ℃• Typ. RDS(on) = 0.54Ω• Ultra Low Gate Charge (typ. Qg= 9nC)• 100% avalanche testedTO-252E-2Absolute Maximum RatingsSymbol

VDSSIDIDMVGSSEASIAREARdv/dtPDTJ, SSTGTLParameterDrain-Source VoltageDrain Current -Continuous (TC = 25℃)

-Continuous (TC = 100℃)Drain Current -Pulsed (Note 1)Gate-Source voltageSingle Pulsed Avalanche Energy (Note 2)Avalanche Current (Note 1)Repetitive Avalanche Energy (Note 1)Peak Diode Recovery dv/dt(Note 3)Power Dissipation (TC = 25℃)

-Derateabove 25℃Operating and Storage Temperature RangeMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 SecondsSST07N60S6007

511±30861.743SSF07N60S

7*

5*11*UnitVAAVmJAmJV/nsW

W/℃℃℃4.583

0.8-55 to +15030035

0.3* Drain current limited by maximum junction l CharacteristicsSymbol

RθJCRθCSRθJAParameterThermal Resistance, Junction-to-CaseThermal Resistance, Case-to-Sink l Resistance, Junction-to-AmbientSST07N60S1.20.562SSF07N60S

5--62Unit℃/W℃/W℃/W©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Electrical Characteristics TC = 25℃unless otherwise notedSST07N60S / SSF07N60S 600V N-Channel MOSFETSymbol

Off Characteristics

BVDSS

ΔBVDSS

/ ΔTJ

IDSS

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Conditions

VGS= 0V, ID= 250µA, TJ= 25℃VGS= 0V, ID= 250µA, TJ= 150℃ID= 250µA, Referenced to 25℃VDS= 600V, VGS= 0V VDS= 480V,

TC= 125℃VGS= 30V, VDS= 0V

VGS= -30V, VDS= 0V

Min

600

----------2.5

----------------------------------Typ

--650

0.6

------3.50.5816

36025

1.225

55

70

40

82.02.7

------1902.3

Max

------1

10

100

-100

4.5

0.65------Unit

V

V

V/℃µA

µA

nA

nA

V

ΩS

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

A

V

ns

µC

Gate-Body Leakage Current, Forward

IGSSF

Gate-Body Leakage Current, Reverse

IGSSR

On Characteristics

VGS(th)

Gate Threshold Voltage VDS= VGS, ID= 250µA

RDS(on)

Static Drain-Source On-Resistance VGS= 10V, ID= 3.5A

gFS

Forward Transconductance VDS= 40V, ID=3.5A

(Note 4)

Dynamic Characteristics

Ciss

Input Capacitance VDS= 25V, VGS= 0V, f = 1.0MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching Characteristics

td(on)

Turn-On Delay Time VDD

= 400V, ID= 3.5A RG= 20Ω(Note

4, 5)

Turn-On Rise Time

tr

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

tf

Total Gate Charge VDS= 480V, ID= 3.5A VGS= 10V

Qg

(Note 4, 5)

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

ISM

Drain-Source Diode Forward Voltage VGS= 0V, IS= 7A

VSD

Reverse Recovery Time VGS= 0V, IS= 7A dIF/dt=100A/µs

trr

(Note 4)

Reverse Recovery Charge

Qrr

----------------7

18

1.5

----NOTES:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25 ℃3. ISD≤7A, di/dt≤ 200A/us, VDD

≤ BVDSS, Starting TJ = 25 ℃4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical Characteristics©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Typical Performance CharacteristicsSST07N60S / SSF07N60S 600V N-Channel MOSFETVDS(V)Figure 1: On-Region Characteristics@25°CVDS(V)Figure 1: On-Region Characteristics@125°CVGS(V)Figure 3: Transfer CharacteristicsID(A)Figure 4: On-Resistance vs. Drain Current and Gate VoltageTemperature (°C)Figure 5: On-Resistance vs. Junction TemperatureTJ(°C)Figure 6: Break Down vs. Junction Temperature©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Typical Performance CharacteristicsSST07N60S / SSF07N60S 600V N-Channel MOSFETVSD(V)Figure 7: Body-Diode Characteristics

Qg(nC)Figure 8: Gate-Charge CharacteristicsVDS(V)Figure 9: Capacitance CharacteristicsVDS

(V)Figure 10: Cossstored EnergyVDS(V)Figure 11: Maximum Forward Biased SafeOperating Area

©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Typical Performance CharacteristicsSST07N60S / SSF07N60S 600V N-Channel MOSFETPulse Width (s)Figure 12: Normalized Maximum Transient Thermal ImpedanceTCASE(°C)Figure 13: Avalanche energyTCASE

(°C)Figure 14: Current De-rating©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Typical Performance CharacteristicsSST07N60S / SSF07N60S 600V N-Channel MOSFETPulse Width (s)Figure 15: Normalized Maximum Transient Thermal Impedance©2012 Super Semiconductor Corporation

SST07N60S / SSF07N60S Rev.1.0

Test circuitsSwitching times test circuit and waveform for inductive loadSwitching times test circuit for inductive loadSwitching time waveformSST07N60S/SSF07N60S 600V N-Channel MOSFETSwitching times test circuit for

inductive loadUnclamped inductive load test circuit and waveformUnclamped inductive load test circuitUnclamped inductive waveform©2012 Super Semiconductor Corporation

SST07N60S/SSF07N60S Rev.1.0

Test circuitsTest circuit and waveform for diode characteristicsTest circuit for diode characteristicsDiode recovery waveformSST07N60S/SSF07N60S 600V N-Channel MOSFET©2012 Super Semiconductor Corporation

SST07N60S/SSF07N60S Rev.1.0

PKG TO-220FullPAKSST07N60S/SSF07N60S 600V N-Channel MOSFET©2012 Super Semiconductor Corporation

SST07N60S/SSF07N60S Rev.1.0

PKG TO-252SST07N60S/SSF07N60S 600V N-Channel MOSFET©2012 Super Semiconductor Corporation

SST07N60S/SSF07N60S Rev.1.0