2024年2月24日发(作者：辉芷琪)

【南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR2SC3052 TRANSISTOR (NPN)

FEATURES

z

Low collector to emitter saturation voltage

VCE(sat)=0.3V max(@IC=100mA,IB=10mA)

Excellent linearity of DC forward current gain

z

==

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

50

50

6

0.2

150

125

-55-125

V

V

V

A

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

SymbolV (BR) CBOV (BR) CEOV (BR) EBOICBO

IEBO

hFE(1)hFE(2)

VCE (sat)

VBE (sat)

Test conditions

IC = 100

μA, IE=0

IC = 100

μA, IB=0

IE= 100

μA, IC=0

Min Max Unit

50 V

50 V

6 V

VCB= 50 V , IE0 0.1

μA

VEB= 6V , IC0 0.1

μA

VCE= 6V, IC= 1mA

VCE= 6V, IC= 0.1mA

IC=100mA, IB= 10mA

IC= 100mA, IB= 10mA

VCE= 6V, IC= 10mA

VCE=6V, IE=0, f=1MHz

VCE=6V,IE=-0.1mA, f=1KHz, RG=2KΩ

150

50

800

0.3

1

V

V

fT

Cob

NF

180 MHz 4 pF

15 dB

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

E F G

150~300 250~500 400~800

LE LF LG

A,May,2011

【南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

2SC2712

TRANSISTOR (NPN)

==SOT-23 Plastic-Encapsulate Transistors

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

= FEATURE

= · Low Noise: NF=1 dB (Typ),10dB(MAX)

=· Complementary to 2SA1162

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

℃

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

==

Symbol Parameter Value UnitCollector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

60 V

50

5

150

150

150

-55-150

V

V

mA

mW℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Noise Figure

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

fT

Cob

NF

IC= 100μA, IE0 60 V

IC=1mA ,IB0 50 V

IE= 100μA, IC0 5 V

VCB= 60 V, IE0 0.1 μA

VEB=5V, IC0 0.1 μA

VCE=6V, IC2mA 70 700

IC= 100mA, IB10mA 0.1 0.25 V

VCE=10V, IC= 1mA

VCB=10V, IE=0,f=1 MHz

VCE=6V,IC=0.1mA,f=1kHz,Rg=10kΩ

80

2.0

3.5

MHz

pF

1.0 10 dB

CLASSIFICATION OF hFE

Rank

Range

Marking

70-140 120-240 200-400 350-700

O Y GR BL

LO LY LG LL

B,Dec,2011

Typical CharacterisiticsStatic Characteristic

10COMMON EMITTERTa=25℃)A8m50uA(

45uA

CI

T640uANE35uARR30uA

UC

4R25uAOTC20uAELLO215uAC10uAIB=5uA00246810COLLECTOR-EMITTER VOLTAGE VCE (V)V

0.3CEsat —— ICβ=10NOITARU)0.2TV(

A

S

ta

sRECETV

T

IMEEGTa=100℃-ART0.1OLTOCVELTa=25℃LOC0.COLLECTOR CURRENT IC (mA)I

150C ——VBE100COMMON EMITTERVCE=6V)AmTa=100℃(

CI

10

TNETa=25℃RR

UC

ROT1CELLOC0.10.20.40.60.81.0BASE-EMMITER VOLTAGE VBE (V)C100ob/ Cib ——

VCB/ VEBf=1MHzIE=0/ IC=0Ta=25℃Cib)Fp(10

C

ECNCob

ATICA1PAC0.10.211020REVERSE VOLTAGE VR (V)2SC2712hFE ——

I400CCOMMON EMITTERVCE=6V300EFhTa=100℃

NIAG

T200Ta=25℃N

ERRUC

CD10000.5110100150COLLECTOR CURRENT IC (mA)V

I1.2BEsat ——CNOTa=25℃IT)0.8AVR(

U

tTasAEBSTa=100℃

V

R

E

TETGIMAT0.4EL-EOSVABβ=100.COLLECTOR CURRENT IC (mA)fT ——

I1000C)zHM(

Tf

YCNEU100Q

ERF

NOITISNACOMMON EMITTERRTVCE=10VTa=25

oC1013103070COLLECTOR CURRENT IC

(mA)Pc —— Ta

200NO150ITAPISS)IDW

RmE(

100

W

cOPP

R

O

TCE50LLOC25150AMBIENT TEMPERATURE Ta (℃)B,Dec,2011

【南京南山半导体有限公司 — 长电三极管选型资料】olAA1A2bcDEE1ee1LL1θDimensions In .0.9001.1500.0000.1000.9001.0500.3000.5000.0800.1502.8003.0001.2001.4002.2502.5500.950 TYP.1.8002.0000.550 REF.0.3000.5000°8°Dimensions In .0.0350.0450.0000.0040.0350.0410.0120.0200.0030.0060.1100.1180.0470.0550.0890.1000.037 TYP.0.0710.0790.022 REF.0.0120.0200°8°

The bottom gasket

Label on the Reel

3000×15 PCS 3000×1 PCS

The top gasket

Stamp “EMPTY”

on the empty box

Seal the box

with the tape

Seal the box

with the tape

QA Label

Label on the Inner Box

Inner Box: 210 mm× 208 mm×203 mmLabel on the Outer Box

Outer Box: 440 mm× 440 mm× 230 mm

2024年2月24日发(作者：辉芷琪)

【南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR2SC3052 TRANSISTOR (NPN)

FEATURES

z

Low collector to emitter saturation voltage

VCE(sat)=0.3V max(@IC=100mA,IB=10mA)

Excellent linearity of DC forward current gain

z

==

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

50

50

6

0.2

150

125

-55-125

V

V

V

A

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

SymbolV (BR) CBOV (BR) CEOV (BR) EBOICBO

IEBO

hFE(1)hFE(2)

VCE (sat)

VBE (sat)

Test conditions

IC = 100

μA, IE=0

IC = 100

μA, IB=0

IE= 100

μA, IC=0

Min Max Unit

50 V

50 V

6 V

VCB= 50 V , IE0 0.1

μA

VEB= 6V , IC0 0.1

μA

VCE= 6V, IC= 1mA

VCE= 6V, IC= 0.1mA

IC=100mA, IB= 10mA

IC= 100mA, IB= 10mA

VCE= 6V, IC= 10mA

VCE=6V, IE=0, f=1MHz

VCE=6V,IE=-0.1mA, f=1KHz, RG=2KΩ

150

50

800

0.3

1

V

V

fT

Cob

NF

180 MHz 4 pF

15 dB

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

E F G

150~300 250~500 400~800

LE LF LG

A,May,2011

【南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

2SC2712

TRANSISTOR (NPN)

==SOT-23 Plastic-Encapsulate Transistors

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

= FEATURE

= · Low Noise: NF=1 dB (Typ),10dB(MAX)

=· Complementary to 2SA1162

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

℃

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

==

Symbol Parameter Value UnitCollector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

60 V

50

5

150

150

150

-55-150

V

V

mA

mW℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Noise Figure

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

fT

Cob

NF

IC= 100μA, IE0 60 V

IC=1mA ,IB0 50 V

IE= 100μA, IC0 5 V

VCB= 60 V, IE0 0.1 μA

VEB=5V, IC0 0.1 μA

VCE=6V, IC2mA 70 700

IC= 100mA, IB10mA 0.1 0.25 V

VCE=10V, IC= 1mA

VCB=10V, IE=0,f=1 MHz

VCE=6V,IC=0.1mA,f=1kHz,Rg=10kΩ

80

2.0

3.5

MHz

pF

1.0 10 dB

CLASSIFICATION OF hFE

Rank

Range

Marking

70-140 120-240 200-400 350-700

O Y GR BL

LO LY LG LL

B,Dec,2011

Typical CharacterisiticsStatic Characteristic

10COMMON EMITTERTa=25℃)A8m50uA(

45uA

CI

T640uANE35uARR30uA

UC

4R25uAOTC20uAELLO215uAC10uAIB=5uA00246810COLLECTOR-EMITTER VOLTAGE VCE (V)V

0.3CEsat —— ICβ=10NOITARU)0.2TV(

A

S

ta

sRECETV

T

IMEEGTa=100℃-ART0.1OLTOCVELTa=25℃LOC0.COLLECTOR CURRENT IC (mA)I

150C ——VBE100COMMON EMITTERVCE=6V)AmTa=100℃(

CI

10

TNETa=25℃RR

UC

ROT1CELLOC0.10.20.40.60.81.0BASE-EMMITER VOLTAGE VBE (V)C100ob/ Cib ——

VCB/ VEBf=1MHzIE=0/ IC=0Ta=25℃Cib)Fp(10

C

ECNCob

ATICA1PAC0.10.211020REVERSE VOLTAGE VR (V)2SC2712hFE ——

I400CCOMMON EMITTERVCE=6V300EFhTa=100℃

NIAG

T200Ta=25℃N

ERRUC

CD10000.5110100150COLLECTOR CURRENT IC (mA)V

I1.2BEsat ——CNOTa=25℃IT)0.8AVR(

U

tTasAEBSTa=100℃

V

R

E

TETGIMAT0.4EL-EOSVABβ=100.COLLECTOR CURRENT IC (mA)fT ——

I1000C)zHM(

Tf

YCNEU100Q

ERF

NOITISNACOMMON EMITTERRTVCE=10VTa=25

oC1013103070COLLECTOR CURRENT IC

(mA)Pc —— Ta

200NO150ITAPISS)IDW

RmE(

100

W

cOPP

R

O

TCE50LLOC25150AMBIENT TEMPERATURE Ta (℃)B,Dec,2011

【南京南山半导体有限公司 — 长电三极管选型资料】olAA1A2bcDEE1ee1LL1θDimensions In .0.9001.1500.0000.1000.9001.0500.3000.5000.0800.1502.8003.0001.2001.4002.2502.5500.950 TYP.1.8002.0000.550 REF.0.3000.5000°8°Dimensions In .0.0350.0450.0000.0040.0350.0410.0120.0200.0030.0060.1100.1180.0470.0550.0890.1000.037 TYP.0.0710.0790.022 REF.0.0120.0200°8°

The bottom gasket

Label on the Reel

3000×15 PCS 3000×1 PCS

The top gasket

Stamp “EMPTY”

on the empty box

Seal the box

with the tape

Seal the box

with the tape

QA Label

Label on the Inner Box

Inner Box: 210 mm× 208 mm×203 mmLabel on the Outer Box

Outer Box: 440 mm× 440 mm× 230 mm