2024年3月8日发(作者：赫连阳曜)

SYMBOL PARAMETERCONDITIONS V CElectrostatic discharge capacitor Human body model -2kVvoltage, all pins(100 pF, 1.5 k ?)THERMAL RESISTANCESSYMBOL PARAMETERCONDITIONS R th j-mb Thermal resistance junction to -- 1.4K/W mounting baseR th j-aThermal resistance junction to in free air60-K/WambientPhilips Semiconductors Product specificationN-channel enhancement mode IRFZ44NTrenchMOS TM transistorSTATIC CHARACTERISTICST j = 25?C unless otherwise specified SYMBOL V (BR)DSS Drain-source breakdown V GS = 0 V; I D = 0.25 mA;55--V voltageT j = -55?C50--V V GS(TO)Gate threshold voltage V DS = V GS ; I D = 1 mA 2.0 3.0 4.0V T j = 175?C 1.0--V T j = -55?C -- 4.4I DSSZero gate voltage drain current V DS = 55 V; V GS = 0 V;-0.0510µA T j = 175?C --500µA I GSS Gate source leakage currentV GS = ±10 V; V DS = 0 V-0.041µA T j = 175?C --20µA ±V (BR)GSS Gate source breakdown voltage I G = ±1 mA;16--V R DS(ON)Drain-source on-state V GS = 10 V; I D = 25 A -1522m ?resistanceT j = 175?C--42m ?DYNAMIC CHARACTERISTICST mb = 25?C unless otherwise specified SYMBOL PARAMETERCONDITIONS g fs Forward transconductance V DS = 25 V; I D = 25 A6--S C iss Input capacitance V GS = 0 V; V DS = 25 V; f = 1 MHz-13501800pF C oss Output capacitance -330400pF C rss Feedback capacitance -155215pF Q g Total gate charge V DD =

44 V; I D = 50 A; V GS = 10 V--62nC Q gs Gate-cource charge--15nC Q gd Gate-drain (miller) charge --26nC t d on Turn-on delay time V DD = 30 V; I D = 25 A;-1826ns t r Turn-on rise timeV GS = 10 V; R G = 10 ?-5075ns t d off Turn-off delay time Resistive load-4050ns t f Turn-off fall time -3040ns L d Internal drain inductance Measured from contact screw on - 3.5-nH tab to centre ofdieL d Internal drain inductance Measured from drain lead 6 mm - 4.5-nH from package to centre of die L sInternal source inductanceMeasured from source lead 6 mm -7.5-nHfrom package to source bond padREVERSE DIODE LIMITING VALUES AND CHARACTERISTICST j = 25?C unless otherwise specified SYMBOL I DR Continuous reverse drain --49A currentI DRM Pulsed reverse drain current --160A V SD Diode forward voltage I F = 25 A; V GS = 0 V -0.95 1.2V I F = 40 A; V GS =0 V - 1.0-t rr Reverse recovery time I F = 40 A; -dI F /dt = 100 A/µs;-47-ns Q rrReverse recovery chargeV GS = -10 V; V R = 30 V-0.15-µCPhilips Semiconductors Product specificationN-channel enhancement mode IRFZ44NTrenchMOS TM transistorAVALANCHE LIMITING VALUESYMBOL W DSSDrain-source non-repetitive I D = 45 A; V DD ≤ 25 V;--110mJunclamped inductive turn-off V GS = 10 V; R GS = 50 ?; T mb = 25 ?Cenergy

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistor

Philips Semiconductors Product specificationN-channel enhancement mode IRFZ44NTrenchMOS TM transistorFig.11. Sub-threshold drain current.I D = f(V GS); conditions: T j = 25 ?C; V DS = V GSFig.12. Typical capacitances, C iss , C oss , C rss .C = f(V DS ); conditions: V GS = 0 V; f = 1 MHzFig.14. Typical reverse diode current.I F = f(V SDS ); conditions: V GS = 0 V; parameter T jFig.15. Normalised avalanche energy rating.W DSS % = f(T mb ); conditions: I D = 49 A0123451E-061E-051E-041E-031E-021E-01Sub-Threshold Conductiontyp2%98%00.20.40.60.81 1.2 1.42IF/A VSDS/VTj/C =

175250.010.11101000.511.522.5T h o u s a n d s p FVDS/VCissCossCrss2Tmb / C120 110 100 90 8070 60 50 40 30 2010 0 WDSS%

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistorPhilips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistorMECHANICAL DATA

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to preventdamage to MOS gate oxide.2. Refer to mounting instructions for SOT78 (TO220) envelopes.3. Epoxy meets UL94 V0 at 1/8".Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistorDEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminaryspecification This data sheet contains preliminary data; supplementary data may be published later. Product specificationThis data sheet contains final product ng valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more ofthe limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device atthese or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Applicationinformation

Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright information presented in this document does not form part of any quotation or contract, it is believed to be accurate andreliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its ation thereof does not convey nor imply any license under patent or other industrial or intellectual property SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these productscan be reasonably expected to result in personal injury. Philips customers using or selling these products for use in suchapplications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use orsale.

2024年3月8日发(作者：赫连阳曜)

SYMBOL PARAMETERCONDITIONS V CElectrostatic discharge capacitor Human body model -2kVvoltage, all pins(100 pF, 1.5 k ?)THERMAL RESISTANCESSYMBOL PARAMETERCONDITIONS R th j-mb Thermal resistance junction to -- 1.4K/W mounting baseR th j-aThermal resistance junction to in free air60-K/WambientPhilips Semiconductors Product specificationN-channel enhancement mode IRFZ44NTrenchMOS TM transistorSTATIC CHARACTERISTICST j = 25?C unless otherwise specified SYMBOL V (BR)DSS Drain-source breakdown V GS = 0 V; I D = 0.25 mA;55--V voltageT j = -55?C50--V V GS(TO)Gate threshold voltage V DS = V GS ; I D = 1 mA 2.0 3.0 4.0V T j = 175?C 1.0--V T j = -55?C -- 4.4I DSSZero gate voltage drain current V DS = 55 V; V GS = 0 V;-0.0510µA T j = 175?C --500µA I GSS Gate source leakage currentV GS = ±10 V; V DS = 0 V-0.041µA T j = 175?C --20µA ±V (BR)GSS Gate source breakdown voltage I G = ±1 mA;16--V R DS(ON)Drain-source on-state V GS = 10 V; I D = 25 A -1522m ?resistanceT j = 175?C--42m ?DYNAMIC CHARACTERISTICST mb = 25?C unless otherwise specified SYMBOL PARAMETERCONDITIONS g fs Forward transconductance V DS = 25 V; I D = 25 A6--S C iss Input capacitance V GS = 0 V; V DS = 25 V; f = 1 MHz-13501800pF C oss Output capacitance -330400pF C rss Feedback capacitance -155215pF Q g Total gate charge V DD =

44 V; I D = 50 A; V GS = 10 V--62nC Q gs Gate-cource charge--15nC Q gd Gate-drain (miller) charge --26nC t d on Turn-on delay time V DD = 30 V; I D = 25 A;-1826ns t r Turn-on rise timeV GS = 10 V; R G = 10 ?-5075ns t d off Turn-off delay time Resistive load-4050ns t f Turn-off fall time -3040ns L d Internal drain inductance Measured from contact screw on - 3.5-nH tab to centre ofdieL d Internal drain inductance Measured from drain lead 6 mm - 4.5-nH from package to centre of die L sInternal source inductanceMeasured from source lead 6 mm -7.5-nHfrom package to source bond padREVERSE DIODE LIMITING VALUES AND CHARACTERISTICST j = 25?C unless otherwise specified SYMBOL I DR Continuous reverse drain --49A currentI DRM Pulsed reverse drain current --160A V SD Diode forward voltage I F = 25 A; V GS = 0 V -0.95 1.2V I F = 40 A; V GS =0 V - 1.0-t rr Reverse recovery time I F = 40 A; -dI F /dt = 100 A/µs;-47-ns Q rrReverse recovery chargeV GS = -10 V; V R = 30 V-0.15-µCPhilips Semiconductors Product specificationN-channel enhancement mode IRFZ44NTrenchMOS TM transistorAVALANCHE LIMITING VALUESYMBOL W DSSDrain-source non-repetitive I D = 45 A; V DD ≤ 25 V;--110mJunclamped inductive turn-off V GS = 10 V; R GS = 50 ?; T mb = 25 ?Cenergy

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistor

Philips Semiconductors Product specificationN-channel enhancement mode IRFZ44NTrenchMOS TM transistorFig.11. Sub-threshold drain current.I D = f(V GS); conditions: T j = 25 ?C; V DS = V GSFig.12. Typical capacitances, C iss , C oss , C rss .C = f(V DS ); conditions: V GS = 0 V; f = 1 MHzFig.14. Typical reverse diode current.I F = f(V SDS ); conditions: V GS = 0 V; parameter T jFig.15. Normalised avalanche energy rating.W DSS % = f(T mb ); conditions: I D = 49 A0123451E-061E-051E-041E-031E-021E-01Sub-Threshold Conductiontyp2%98%00.20.40.60.81 1.2 1.42IF/A VSDS/VTj/C =

175250.010.11101000.511.522.5T h o u s a n d s p FVDS/VCissCossCrss2Tmb / C120 110 100 90 8070 60 50 40 30 2010 0 WDSS%

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistorPhilips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistorMECHANICAL DATA

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to preventdamage to MOS gate oxide.2. Refer to mounting instructions for SOT78 (TO220) envelopes.3. Epoxy meets UL94 V0 at 1/8".Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistorDEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminaryspecification This data sheet contains preliminary data; supplementary data may be published later. Product specificationThis data sheet contains final product ng valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more ofthe limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device atthese or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Applicationinformation

Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright information presented in this document does not form part of any quotation or contract, it is believed to be accurate andreliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its ation thereof does not convey nor imply any license under patent or other industrial or intellectual property SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these productscan be reasonably expected to result in personal injury. Philips customers using or selling these products for use in suchapplications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use orsale.