MRF8S9200NR3;中文规格书,Datasheet资料-USB迷|专注于互联网分享

2024年3月9日发(作者：楚湘云)

FreescaleSemiconductorTechnicalDataDocumentNumber:MRF8S9200NRev.1,5/2010RFPowerFieldEffectTransistorN--ChannelEnhancement--ModeLateralMOSFETDesigsedinClassABandClassCforalltypicalcellularbasestationmodulationformats.•TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts,IDQ=1400mA,Pout=58WattsAvg.,IQMagnitudeClipping,ChannelBandwidth=3.84MHz,InputSignalPAR=7.5dB@0.01%ncy920MHz940MHz960MHzGps(dB)19.919.919.5ηD(%)37.737.136.8OutputPAR(dB)6.16.16.0ACPR(dBc)--36.2--36.6--36.0MRF8S9200NR3920--960MHz,58WAVG.,28VSINGLEW--CDMALATERALN--CHANNELRFPOWERMOSFET•CapableofHandling10:1VSWR,@32Vdc,940MHz,300WattsCWOutputPower(3dBInputOverdrivefromRatedPout),DesignedforEnhancedRuggedness•TypicalPout@1dBCompressionPoint≃200WattsCWFeatures•100%PARTestedforGuaranteedOutputPowerCapability•CharacterizedwithSeriesEquivalentLarge--SignalImpedanceParametersandCommonSourceS--Parameters•InternallyMatchedforEaseofUse•IntegratedESDProtection•GreaterNegativeGate--SourceVoltageRangeforImprovedClassCOperation•225°CCapablePlasticPackage•DesignedforDigitalPredistortionErrorCorrectionSystems•OptimizedforDohertyApplications•RoHSCompliant•InTapeandReel.R3Suffix=250Unitsper32mm,mRatingsRatingDrain--SourceVoltageGate--SourceVoltageOperatingVoltageStorageTemperatureRangeCaseOperatingTemperatureOperatingJunctionTemperature(1,2)SymbolVDSSVGSVDDTstgTCTJCASE2021--03,STYLE1OM--780--2PLASTICValue--0.5,+70--6.0,+1032,+0--65to+150150225UnitVdcVdcVdc°C°C°lCharacteristicsCharacteristicThermalResistance,JunctiontoCaseCaseTemperature80°C,58WCW,28Vdc,IDQ=1400mACaseTemperature80°C,200WCW,28Vdc,IDQ=1400mASymbolRθJCValue(2,3)0.300.25Unit°C/lculatoravailableat/Software&Tools/DevelopmentTools/oAN1955,tp:///Documentation/ApplicationNotes--AN1955.©FreescaleSemiconductor,Inc.,8S9200NR31RFDeviceDataFreescaleSemiconductor/

tectionCharacteristicsTestMethodologyHumanBodyModel(perJESD22--A114)MachineModel(perEIA/JESD22--A115)ChargeDeviceModel(perJESD22--C101)Class2(Minimum)A(Minimum)IV(Minimum)reSensitivityLevelTestMethodologyPerJESD22--A113,IPC/JEDECJ--STD--020Rating3PackagePeakTemperature260Unit°icalCharacteristics(TA=25°Cunlessotherwisenoted)CharacteristicOffCharacteristicsZeroGateVoltageDrainLeakageCurrent(VDS=70Vdc,VGS=0Vdc)ZeroGateVoltageDrainLeakageCurrent(VDS=28Vdc,VGS=0Vdc)Gate--SourceLeakageCurrent(VGS=5Vdc,VDS=0Vdc)OnCharacteristicsGateThresholdVoltage(VDS=10Vdc,ID=400μAdc)GateQuiescentVoltage(VDD=28Vdc,ID=1400mAdc,MeasuredinFunctionalTest)Drain--SourceOn--Voltage(VGS=10Vdc,ID=3.3Adc)VGS(th)VGS(Q)VDS(on)1.52.30.12.330.233.80.3VdcVdcVdcIDSSIDSSIGSS——————1011μAdcμAdcμAdcSymbolMinTypMaxUnitFunctionalTests(1)(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ=1400mA,Pout=58WAvg.,f=940MHz,Single--CarrierW--CDMA,IQMagnitudeClipping,InputSignalPAR=7.5dB@0.01%asuredin3.84MHzChannelBandwidth@±ainDrainEfficiencyOutputPeak--to--AverageRatio@0.01%ProbabilityonCCDFAdjacentChannelPowerRatioInputReturnLossGpsηDPARACPRIRL18345.8——19.937.16.1--36.6--2221——--35--9dB%dBdBcdBTypicalBroadbandPerformance(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ=1400mA,Pout=58WAvg.,Single--CarrierW--CDMA,IQMagnitudeClipping,InputSignalPAR=7.5dB@0.01%asuredin3.84MHzChannelBandwidth@±(dB)19.919.919.5ηD(%)37.737.136.8OutputPAR(dB)6.16.16.0ACPR(dBc)--36.2--36.6--36.0IRL(dB)--14--22--15(continued)MRF8S9200NR32/RFDeviceDataFreescaleSemiconductor

icalCharacteristics(TA=25°Cunlessotherwisenoted)(continued)CharacteristicPout@1dBCompressionPoint,CWIMDSymmetry@160WPEP,PoutwhereIMDThirdOrderIntermodulation30dBc(DeltaIMDThirdOrderIntermodulationbetweenUpperandLowerSidebands>2dB)VBWResonancePoint(IMDThirdOrderIntermodulationInflectionPoint)GainFlatnessin40MHzBandwidth@Pout=riationoverTemperature(--30°Cto+85°C)OutputPowerVariationoverTemperature(--30°Cto+85°C)SymbolP1dBIMDsymMin——Typ20015Max——UnitWMHzTypicalPerformances(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ=1400mA,920--960MHzBandwidthVBWresGF∆G∆P1dB————450.70.0120.001————MHzdBdB/°CdBm/°CMRF8S9200NR3RFDeviceDataFreescaleSemiconductor/3

R1B1VGSC4C5C31C21C22C29C25C26VDSC6C7C1R2C11C10C12C13C14C15C16C17C188S9200NR3TestCircuitComponentDesignationsandValuesPartB1C1,C5,C19,C21,C22,C23,C24C2C3C4C6,C7,C8,C9C10,C12C11,C13C14,C20C15,C17C16C18C25,C26,C27,C28C29,C30C31C32R1R2PCBDescriptionFerriteBeads,Short39pFChipCapacitors2pFChipCapacitor6.2pFChipCapacitor2.2μFChipCapacitor3.3pFChipCapacitors6.8pFChipCapacitors5.1pFChipCapacitors0.8pFChipCapacitors0.5pFChipCapacitors1.5pFChipCapacitor1.2pFChipCapacitor10μF,50VChipCapacitors470μF,ElectrolyticCapacitors47μF,50VElectrolyticCapacitor10pFChipCapacitor3.3Ω,1/2WChipResistor0Ω,3.5AChipResistor0.030″,εr=3.5PartNumber2743019447ATC100B390JT500XTATC100B2R0BT500XTATC100B6R2BT500XTC1825C225J5RAC--TUATC100B3R3CT500XTATC100B6R8CT500XTATC100B5R1CT500XTATC100B0R8BT500XTATC100B0R5BT500XTATC100B1R5BT500XTATC100B1R2BT500XTGRM55DR61H106KA88LMCGPR63V477M13X26--RH476KXM050MATC100B100JT500XTP3.3VCT--NDCRCW12060000Z0EARF--asonicVishayTaconicManufacturerFair--RiteMRF8S9200NR34/RFDeviceDataFreescaleSemiconductor

TYPICALCHARACTERISTICSηD,DRAINEFFICIENCY(%)2120.520Gps,POWERGAIN(dB)19.51918.51817.51716.5ACPRPARC8759f,FREQUENCY(MHz)ηDGpsIRLInputSignalPAR=7.5dB@0.01%ProbabilityonCCDFVDD=28Vdc,Pout=58W(Avg.)IDQ=1400mA,Single--CarrierW--CDMA3.84MHzChannelBandwidth4442403836--30--32ACPR(dBc)--34--36--38--401000IRL,INPUTRETURNLOSS(dB)--5--10--15--20--25--300--0.5--1--1.5--2--2.5PARC(dB)Peak--to--AverageRatioCompression(PARC)BroadbandPerformance@Pout=58WattsAvg.--10--20--30--40--50IM7--U--60110TWO--TONESPACING(MHz)100IMD,INTERMODULATIONDISTORTION(dBc)VDD=28Vdc,Pout=160W(PEP),IDQ=1400mATwo--ToneMeasurements(f1+f2)/2=odulationDistortionProductsversusTwo--ToneSpacing20OUTPUTCOMPRESSIONAT0.01%PROBABILITYONCCDF(dB)19.5Gps,POWERGAIN(dB)1918.51817.51710--1--2--3--4--5PARC--1dB=49.04W--2dB=69.69WVDD=28Vdc,IDQ=1400mA,f=940MHzSingle--CarrierW--CDMA,3.84MHzChannelBandwidthInputSignalPAR=7.5dB@0.01%ProbabilityonCCDF3GpsηDACPR--3dB=95.95W4035302555ηD,DRAINEFFICIENCY(%)5045--20--25--30--35--40--45--50ACPR(dBc)130Pout,OUTPUTPOWER(WATTS)Peak--to--AverageRatioCompression(PARC)versusOutputPowerMRF8S9200NR3RFDeviceDataFreescaleSemiconductor/5

TYPICALCHARACTERISTICS242322Gps,POWERGAIN(dB)2124110Pout,OUTPUTPOWER(WATTS)AVG.100ACPRηD100VDD=28Vdc,IDQ=1400mA,Single--Carrier960MHz90W--CDMA,3.84MHzChannelBandwidthInputSignalPAR=7.5dB@0.01%940MHz920MHz80ProbabilityonCCDF960MHz70Gpsf=920MHz60940MHz960MHz920MHz50--20--24ηD,DRAINEFFICIENCY(%)--28--32--40--44--48--52--56--60ACPR(dBc)+--CarrierW--CDMAPowerGain,DrainEfficiencyandACPRversusOutputPower252015GAIN(dB)1050--5--10--15550650VDD=28VdcPin=0dBmIDQ=1400mA751501250IRLGain1050--5--10--15--20--25--301350IRL(dB)3.84MHzChannelBW0f,FREQUENCY(MHz)andFrequencyResponseW--CDMATESTSIGNAL10010PROBABILITY(%)1InputSignal0.1(dB)asuredin3.84MHzChannelBandwidth@±ignalPAR=7.5dB@0.01%ProbabilityonCCDFPEAK--TO--AVERAGE(dB)0.010.0010.0001100--10--20--30--40--50--60--70--80--90--100--9--7.2--5.4--3.6--1.85.47.29f,FREQUENCY(MHz)----CDMAIQMagnitudeClipping,Single--CarrierTestSignalMRF8S9200NR36/--CarrierW--CDMASpectrumRFDeviceDataFreescaleSemiconductor

VDD=28Vdc,IDQ=1400mA,Pout=820ZsourceΩ1.16--j2.851.09--j2.631.04--j2.450.98--j2.270.93--j2.080.88--j1.900.83--j1.720.79--j1.550.76--j1.39ZloadΩ2.29--j2.082.11--j1.951.94--j1.811.76--j1.681.59--j1.511.42--j1.331.28--j1.131.14--j0.931.02--j0.73Zsource==UnderTEquivalentSourceandLoadImpedanceMRF8S9200NR3RFDeviceDataFreescaleSemiconductor/7

ALTERNATIVEPEAKTUNELOADPULLCHARACTERISTICSVDD=28Vdc,IDQ=1400mA,PulsedCW,10μsec(on),10%DutyCycle5958Pout,OUTPUTPOWER(dBm)57565554535253940Idealf=920MHzf=940MHzf=960MHzf=920MHzActualf=940MHzf=960MHzPin,INPUTPOWER(dBm)NOTE:LoadPullTestFixtureTunedforPeakP1dBOutputPower@28Vf(MHz)920940960P1dBWatts267263261dBm54.354.254.2332327327P3dBWattsdBm55.255.155.2TestImpedancesperCompressionLevelf(MHz)920940960P1dBP1dBP1dBZsourceΩ0.70--j1.660.68--j1.850.87--j1.99ZloadΩCWOutputPowerversusInputPower@28VMRF8S9200NR38/RFDeviceDataFreescaleSemiconductor

PACKAGEDIMENSIONSMRF8S9200NR3RFDeviceDataFreescaleSemiconductor/9

MRF8S9200NR310/RFDeviceDataFreescaleSemiconductor

分销商库存信息:FREESCALEMRF8S9200NR3

2024年3月9日发(作者：楚湘云)

PACKAGEDIMENSIONSMRF8S9200NR3RFDeviceDataFreescaleSemiconductor/9

MRF8S9200NR310/RFDeviceDataFreescaleSemiconductor

分销商库存信息:FREESCALEMRF8S9200NR3

USB迷 | 专注于互联网分享

MRF8S9200NR3;中文规格书,Datasheet资料

与本文相关的文章

评论列表 (0)