2024年3月13日发(作者：戈依波)
元器件交易网
Silicon N Channel MOSFET Triode
q
BF 999
For high-frequency stages up to 300 MHz,
preferably in FM applications
Type
BF 999
Marking
LB
Ordering Code
(tape and reel)
Q62702-F1132
Pin Configuration
123
GDS
Package
1)
SOT-23
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate-source peak current
Total power dissipation,T
A
≤
60 ˚C
Storage temperature range
Channel temperature
Thermal Resistance
Junction - ambient
2)
R
th JA
≤
450
Symbol
V
DS
I
D
±
Values
20
30
10
200
150
Unit
V
mA
mW
I
GSM
P
tot
T
stg
T
ch
– 55 … + 150˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15mm
×
16.7mm
×
0.7mm.
Semiconductor Group1
07.94
元器件交易网
BF 999
Electrical Characteristics
atT
A
= 25 ˚C, unless otherwise specified.
ParameterSymbol
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 10
µ
A, –V
GS
= 4V
Gate-source breakdown voltage
±
I
GS
= 10mA,V
DS
= 0
Gate-source leakage current
±
V
GS
= 5V,V
DS
= 0
Drain current
V
DS
= 10V,V
GS
= 0
Gate-source pinch-off voltage
V
DS
= 10V,I
D
= 20
µ
A
AC Characteristics
Forward transconductance
V
DS
= 10V,I
D
= 10mA,f = 1kHz
Gate input capacitance
V
DS
= 10V,I
D
= 10mA,f = 1MHz
Reverse transfer capacitance
V
DS
= 10V,I
D
= 10mA,f = 1MHz
Output capacitance
V
DS
= 10V,I
D
= 10mA,f = 1MHz
Power gain
(test circuit)
V
DS
= 10V,I
D
= 10mA, f = 200MHz,
G
G
= 2mS,G
L
= 0.5mS
Noise figure (test circuit)
V
DS
= 10V,I
D
= 10mA,f = 200MHz,
G
G
= 2mS,G
L
= 0.5mS
g
fs
C
gss
C
dg
C
dss
G
p
14
–
–
–
–
16
2.5
25
1
25
–
–
–
–
–
mS
pF
fF
pF
dB
V
(BR) DS
±
±
Values
.
Unit
20
6.5
–
5
–
–
–
–
–
–
–
12
50
18
2.5
V
V
(BR) GSS
I
GSS
nA
mA
V
I
DSS
–V
GS (p)
F–1–
Semiconductor Group2
2024年3月13日发(作者：戈依波)
元器件交易网
Silicon N Channel MOSFET Triode
q
BF 999
For high-frequency stages up to 300 MHz,
preferably in FM applications
Type
BF 999
Marking
LB
Ordering Code
(tape and reel)
Q62702-F1132
Pin Configuration
123
GDS
Package
1)
SOT-23
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate-source peak current
Total power dissipation,T
A
≤
60 ˚C
Storage temperature range
Channel temperature
Thermal Resistance
Junction - ambient
2)
R
th JA
≤
450
Symbol
V
DS
I
D
±
Values
20
30
10
200
150
Unit
V
mA
mW
I
GSM
P
tot
T
stg
T
ch
– 55 … + 150˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15mm
×
16.7mm
×
0.7mm.
Semiconductor Group1
07.94
元器件交易网
BF 999
Electrical Characteristics
atT
A
= 25 ˚C, unless otherwise specified.
ParameterSymbol
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 10
µ
A, –V
GS
= 4V
Gate-source breakdown voltage
±
I
GS
= 10mA,V
DS
= 0
Gate-source leakage current
±
V
GS
= 5V,V
DS
= 0
Drain current
V
DS
= 10V,V
GS
= 0
Gate-source pinch-off voltage
V
DS
= 10V,I
D
= 20
µ
A
AC Characteristics
Forward transconductance
V
DS
= 10V,I
D
= 10mA,f = 1kHz
Gate input capacitance
V
DS
= 10V,I
D
= 10mA,f = 1MHz
Reverse transfer capacitance
V
DS
= 10V,I
D
= 10mA,f = 1MHz
Output capacitance
V
DS
= 10V,I
D
= 10mA,f = 1MHz
Power gain
(test circuit)
V
DS
= 10V,I
D
= 10mA, f = 200MHz,
G
G
= 2mS,G
L
= 0.5mS
Noise figure (test circuit)
V
DS
= 10V,I
D
= 10mA,f = 200MHz,
G
G
= 2mS,G
L
= 0.5mS
g
fs
C
gss
C
dg
C
dss
G
p
14
–
–
–
–
16
2.5
25
1
25
–
–
–
–
–
mS
pF
fF
pF
dB
V
(BR) DS
±
±
Values
.
Unit
20
6.5
–
5
–
–
–
–
–
–
–
12
50
18
2.5
V
V
(BR) GSS
I
GSS
nA
mA
V
I
DSS
–V
GS (p)
F–1–
Semiconductor Group2