2024年3月20日发(作者：栾碧巧)
查询PBSS5160DS供应商
PBSS5160DS
60 V, 1 A PNP low V
CEsat
(BISS) transistor
Rev. 02 — 28 June 2005Product data sheet
t profile
1.1General description
PNP/PNP low V
CEsat
Breakthrough in Small Signal (BISS) transistor pair in a SOT457
(SC-74) Surface Mounted Device (SMD) plastic package.
NPNcomplement:PBSS4160DS.
1.2Features
s
s
s
s
s
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3Applications
sDual low power switches (e.g. motors, fans)
sAutomotive applications
1.4Quick reference data
Table 1:
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
t
p
≤1ms
I
C
=−1A;
I
B
=−100mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
250
Max
−60
−1
−2
330
Unit
V
A
A
mΩ
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Pulse test: t
p
≤300µs;δ≤0.02.
Philips Semiconductors
PBSS5160DS
60 V, 1 A PNP low V
CEsat
(BISS) transistor
g information
Table 2:
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
sym018
Simplified outline
654
Symbol
6
5
4
123
TR1
TR2
3
ng information
Table 3:Ordering information
Package
Name
PBSS5160DSSC-74
Description
plastic surface mounted package; 6leads
Version
SOT457
Type number
g
Table 4:Marking codes
Marking code
A5
Type number
PBSS5160DS
ng values
Table 5:Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
ParameterConditionsMin
-
-
-
[1]
[2]
[3]
Max
−80
−60
−5
−0.77
−0.9
−1
−2
−300
−1
Unit
V
V
V
A
A
A
A
mA
A
Per transistor
collector-base voltageopen emitter
collector-emitter
voltage
emitter-base voltage
collector current (DC)
open base
open collector
-
-
-
-
-
-
I
CM
I
B
I
BM
peak collector current
base current (DC)
peak base current
single pulse; t
p
≤1ms
single pulse; t
p
≤1ms
9397 750 15186© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheetRev. 02 — 28 June 20052 of 14
2024年3月20日发(作者：栾碧巧)
查询PBSS5160DS供应商
PBSS5160DS
60 V, 1 A PNP low V
CEsat
(BISS) transistor
Rev. 02 — 28 June 2005Product data sheet
t profile
1.1General description
PNP/PNP low V
CEsat
Breakthrough in Small Signal (BISS) transistor pair in a SOT457
(SC-74) Surface Mounted Device (SMD) plastic package.
NPNcomplement:PBSS4160DS.
1.2Features
s
s
s
s
s
Low collector-emitter saturation voltage V
CEsat
High collector current capability: I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3Applications
sDual low power switches (e.g. motors, fans)
sAutomotive applications
1.4Quick reference data
Table 1:
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
t
p
≤1ms
I
C
=−1A;
I
B
=−100mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
250
Max
−60
−1
−2
330
Unit
V
A
A
mΩ
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Pulse test: t
p
≤300µs;δ≤0.02.
Philips Semiconductors
PBSS5160DS
60 V, 1 A PNP low V
CEsat
(BISS) transistor
g information
Table 2:
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
sym018
Simplified outline
654
Symbol
6
5
4
123
TR1
TR2
3
ng information
Table 3:Ordering information
Package
Name
PBSS5160DSSC-74
Description
plastic surface mounted package; 6leads
Version
SOT457
Type number
g
Table 4:Marking codes
Marking code
A5
Type number
PBSS5160DS
ng values
Table 5:Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
ParameterConditionsMin
-
-
-
[1]
[2]
[3]
Max
−80
−60
−5
−0.77
−0.9
−1
−2
−300
−1
Unit
V
V
V
A
A
A
A
mA
A
Per transistor
collector-base voltageopen emitter
collector-emitter
voltage
emitter-base voltage
collector current (DC)
open base
open collector
-
-
-
-
-
-
I
CM
I
B
I
BM
peak collector current
base current (DC)
peak base current
single pulse; t
p
≤1ms
single pulse; t
p
≤1ms
9397 750 15186© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheetRev. 02 — 28 June 20052 of 14