2024年3月22日发(作者:暨凌寒)
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
IGBT MODULE
2MBI75U4A-120
MS5F 6060
Mar. 09 ’05
Mar. 09 ’05
ita
ka
MS5F6060
1
13
H04-004-07b
R e v i s e d R e c o r d s
Date
Classi-
fication
t
Applied
date
Issued
date
DrawnCheckedCheckedApproved
Mar.-09 -’05
Enactment
ka
MS5F6060
2
13
H04-004-06b
2MBI75U4A-120
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
MS5F6060
3
13
H04-004-03a
3. Absolute Maximum Ratings ( at Tc= 25
o
C unless otherwise specified )
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Collector currentIcp
-Ic
-Ic pulse
Pc
Tj
Tstg
Continuous
1ms
1ms
1 device
Tc=25
o
C
Tc=80
o
C
Tc=25
o
C
Tc=80
o
C
Conditions
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation
between terminal and copper base (*1)VisoAC : 1min.
voltage
Screw
Mounting (*2)
-
Terminals (*2)
Torque
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Maximum
Units
Ratings
1200V
±20V
100
75
200
A
150
75
150
400W
+150
o
C
-40 to +125
2500
3.5
VAC
N m
4. Electrical characteristics ( at Tj= 25
o
C unless otherwise specified )
Items
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
Conditions
VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=75mA
Ic=75A
VGE=15V
Characteristics
.
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.5
2.05
2.25
1.90
2.10
8
0.32
0.10
0.03
0.41
0.07
1.80
1.90
1.65
1.75
-
1.39
1.0
200
8.5
2.20
-
2.05
-
-
1.20
0.60
-
1.00
0.30
1.95
-
1.80
-
0.35
-
Units
mA
nA
V
Tj=25
o
C
Tj=125
o
C
Tj=25
o
C
Tj=125
o
C
VCE=10V,VGE=0V,f=1MHz
Vcc=600V
Ic=75A
VGE=±15V
RG=9.1Ω
IF=75A
VGE=0V
Tj=25
o
C
Tj=125
o
C
Tj=25
o
C
Tj=125
o
C
V
nF
us
Forward on voltageV
us
mΩ
Reverse recovery timeIF=75A
Lead resistance,
R lead
terminal-chip (*3)
(*3) Biggest internal terminal resistance among arm.
MS5F6060
4
13
H04-004-03a
5. Thermal resistance characteristics
Items
Thermal resistance(1device)
Symbols
Rth(j-c)
IGBT
FWD
Conditions
Characteristics
.
--0.31
--0.48
Units
o
Contact Thermal resistance
Rth(c-f)with Thermal Compound -0.05-
(1 device) (*4)
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
C/W
6. Indication on module
Logo of production
2MBI75U4A-120
75A 1200V
.
7. Applicable category
Place of manufacturing (code)
This specification is applied to IGBT-Module named 2MBI75U4A-120.
8. Storage and transportation notes
•
The module should be stored at a standard temperature of 5 to 35
o
C and humidity of 45 to 75% .
•
Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
•
Avoid exposure to corrosive gases and dust.
•
Avoid excessive external force on the module.
•
Store modules with unprocessed terminals.
•
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
~~
90%
0V
L
0V
V
GE
t
rr
I
rr
90%
~~
V
CE
Vcc
Ic
90%
R
G
V
GE
V
CE
Ic
0V
0A
t
r(i)
t
r
t
on
t
off
~~
Ic
10%10%
V
CE
t
f
10%
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
MS5F6060
5
13
H04-004-03a
11. Reliability test results
Reliability Test Items
Test
cate-
gories
Test items
1Terminal Strength
(Pull test)
2Mounting Strength
Pull force
Test time
Screw torque
Test time
Test methods and conditions
:
:
:
:
40N
10±1 sec.
2.5 ~ 3.5 N・m (M5)
10±1 sec.
Reference
NumberAccept-
norms
ofance
EIAJ ED-4701
samplenumber
5
5
( 0 : 1 )
( 0 : 1 )
(Aug.-2001 edition)
M
e
c
h
a
n
i
c
a
l
T
e
s
t
s
Test Method 401
Method
Ⅰ
Test Method 402
method
Ⅱ
Test Method 403
Reference 1
Condition code B
3Vibration
4Shock
1High Temperature
Storage
2Low Temperature
Storage
3Temperature
Humidity
Storage
4Unsaturated
Pressurized Vapor
Range of frequency : 10 ~ 500Hz
Sweeping time:15 min.
Acceleration:
100m/s
2
Sweeping direction : Each X,Y,Z axis
Test time:6 hr. (2hr./direction)
Maximum acceleration:
5000m/s
2
Pulse width:1.0msec.
Direction:Each X,Y,Z axis
Test time:3 times/direction
Storage temp.:125±5 ℃
Test duration:1000hr.
Storage temp.:-40±5 ℃
Test duration:1000hr.
Storage temp.:85±2 ℃
Relative humidity:85±5%
Test duration:1000hr.
Test temp.:120±2 ℃
Test humidity :85±5%
Test duration:96hr.
Test temp.: Low temp. -40
±
5
℃
High temp. 125 ±5 ℃
RT 5 ~ 35
℃
:High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
:100 cycles
+0
:
High temp. 100
℃
+5
-0
-5
5( 0 : 1 )
Test Method 404
Condition code B
5( 0 : 1 )
Test Method 201
Test Method 202
Test Method 103
Test code C
Test Method 103
Test code E
Test Method 105
5
5
5
( 0 : 1 )
( 0 : 1 )
( 0 : 1 )
5( 0 : 1 )
E
n
v
i
r
o
n
m
e
n
t
T
e
s
t
s
5Temperature
Cycle
5( 0 : 1 )
Dwell time
Number of cycles
6Thermal Shock
Test temp.
Test Method 307
method
Ⅰ
Condition code A
5( 0 : 1 )
Low temp. 0 ℃
Used liquid : Water with ice and boiling water
Dipping time:5 min. par each temp.
Transfer time:10 sec.
Number of cycles:10 cycles
MS5F6060
6
13
H04-004-03a
Reliability Test Items
Test
cate-
gories
Test items
1High temperature
Reverse Bias
Test methods and conditions
Reference
NumberAccept-
norms
ofance
EIAJ ED-4701
samplenumber
5( 0 : 1 )
(Aug.-2001 edition)
Test Method 101
Test temp.
Bias Voltage
Bias Method
E
n
d
u
r
a
n
c
E
e
n
T
d
u
e
r
s
a
t
s
n
c
e
T
e
s
t
s
Test duration
2High temperature
Bias (for gate)Test temp.
Bias Voltage
Bias Method
Test duration
3Temperature
Humidity BiasTest temp.
Relative humidity
Bias Voltage
Bias Method
Test duration
ON time
OFF time
Test temp.
Number of cycles
:Ta = 125±5 ℃
(Tj
≦
150
℃
)
:VC = 0.8×VCES
:Applied DC voltage to C-E
VGE = 0V
:1000hr.
Test Method 101
5( 0 : 1 )
:Ta = 125±5 ℃
(Tj
≦
150
℃
)
:VC = VGE = +20V or -20V
:Applied DC voltage to G-E
VCE = 0V
:1000hr.
:
:
:
:
:
:
:
:
:
85±2 C
85±5%
VC = 0.8×VCES
Applied DC voltage to C-E
VGE = 0V
1000hr.
2 sec.
18 sec.
2024年3月22日发(作者:暨凌寒)
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
IGBT MODULE
2MBI75U4A-120
MS5F 6060
Mar. 09 ’05
Mar. 09 ’05
ita
ka
MS5F6060
1
13
H04-004-07b
R e v i s e d R e c o r d s
Date
Classi-
fication
t
Applied
date
Issued
date
DrawnCheckedCheckedApproved
Mar.-09 -’05
Enactment
ka
MS5F6060
2
13
H04-004-06b
2MBI75U4A-120
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
MS5F6060
3
13
H04-004-03a
3. Absolute Maximum Ratings ( at Tc= 25
o
C unless otherwise specified )
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Collector currentIcp
-Ic
-Ic pulse
Pc
Tj
Tstg
Continuous
1ms
1ms
1 device
Tc=25
o
C
Tc=80
o
C
Tc=25
o
C
Tc=80
o
C
Conditions
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation
between terminal and copper base (*1)VisoAC : 1min.
voltage
Screw
Mounting (*2)
-
Terminals (*2)
Torque
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Maximum
Units
Ratings
1200V
±20V
100
75
200
A
150
75
150
400W
+150
o
C
-40 to +125
2500
3.5
VAC
N m
4. Electrical characteristics ( at Tj= 25
o
C unless otherwise specified )
Items
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
Conditions
VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=75mA
Ic=75A
VGE=15V
Characteristics
.
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.5
2.05
2.25
1.90
2.10
8
0.32
0.10
0.03
0.41
0.07
1.80
1.90
1.65
1.75
-
1.39
1.0
200
8.5
2.20
-
2.05
-
-
1.20
0.60
-
1.00
0.30
1.95
-
1.80
-
0.35
-
Units
mA
nA
V
Tj=25
o
C
Tj=125
o
C
Tj=25
o
C
Tj=125
o
C
VCE=10V,VGE=0V,f=1MHz
Vcc=600V
Ic=75A
VGE=±15V
RG=9.1Ω
IF=75A
VGE=0V
Tj=25
o
C
Tj=125
o
C
Tj=25
o
C
Tj=125
o
C
V
nF
us
Forward on voltageV
us
mΩ
Reverse recovery timeIF=75A
Lead resistance,
R lead
terminal-chip (*3)
(*3) Biggest internal terminal resistance among arm.
MS5F6060
4
13
H04-004-03a
5. Thermal resistance characteristics
Items
Thermal resistance(1device)
Symbols
Rth(j-c)
IGBT
FWD
Conditions
Characteristics
.
--0.31
--0.48
Units
o
Contact Thermal resistance
Rth(c-f)with Thermal Compound -0.05-
(1 device) (*4)
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
C/W
6. Indication on module
Logo of production
2MBI75U4A-120
75A 1200V
.
7. Applicable category
Place of manufacturing (code)
This specification is applied to IGBT-Module named 2MBI75U4A-120.
8. Storage and transportation notes
•
The module should be stored at a standard temperature of 5 to 35
o
C and humidity of 45 to 75% .
•
Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
•
Avoid exposure to corrosive gases and dust.
•
Avoid excessive external force on the module.
•
Store modules with unprocessed terminals.
•
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
~~
90%
0V
L
0V
V
GE
t
rr
I
rr
90%
~~
V
CE
Vcc
Ic
90%
R
G
V
GE
V
CE
Ic
0V
0A
t
r(i)
t
r
t
on
t
off
~~
Ic
10%10%
V
CE
t
f
10%
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
MS5F6060
5
13
H04-004-03a
11. Reliability test results
Reliability Test Items
Test
cate-
gories
Test items
1Terminal Strength
(Pull test)
2Mounting Strength
Pull force
Test time
Screw torque
Test time
Test methods and conditions
:
:
:
:
40N
10±1 sec.
2.5 ~ 3.5 N・m (M5)
10±1 sec.
Reference
NumberAccept-
norms
ofance
EIAJ ED-4701
samplenumber
5
5
( 0 : 1 )
( 0 : 1 )
(Aug.-2001 edition)
M
e
c
h
a
n
i
c
a
l
T
e
s
t
s
Test Method 401
Method
Ⅰ
Test Method 402
method
Ⅱ
Test Method 403
Reference 1
Condition code B
3Vibration
4Shock
1High Temperature
Storage
2Low Temperature
Storage
3Temperature
Humidity
Storage
4Unsaturated
Pressurized Vapor
Range of frequency : 10 ~ 500Hz
Sweeping time:15 min.
Acceleration:
100m/s
2
Sweeping direction : Each X,Y,Z axis
Test time:6 hr. (2hr./direction)
Maximum acceleration:
5000m/s
2
Pulse width:1.0msec.
Direction:Each X,Y,Z axis
Test time:3 times/direction
Storage temp.:125±5 ℃
Test duration:1000hr.
Storage temp.:-40±5 ℃
Test duration:1000hr.
Storage temp.:85±2 ℃
Relative humidity:85±5%
Test duration:1000hr.
Test temp.:120±2 ℃
Test humidity :85±5%
Test duration:96hr.
Test temp.: Low temp. -40
±
5
℃
High temp. 125 ±5 ℃
RT 5 ~ 35
℃
:High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
:100 cycles
+0
:
High temp. 100
℃
+5
-0
-5
5( 0 : 1 )
Test Method 404
Condition code B
5( 0 : 1 )
Test Method 201
Test Method 202
Test Method 103
Test code C
Test Method 103
Test code E
Test Method 105
5
5
5
( 0 : 1 )
( 0 : 1 )
( 0 : 1 )
5( 0 : 1 )
E
n
v
i
r
o
n
m
e
n
t
T
e
s
t
s
5Temperature
Cycle
5( 0 : 1 )
Dwell time
Number of cycles
6Thermal Shock
Test temp.
Test Method 307
method
Ⅰ
Condition code A
5( 0 : 1 )
Low temp. 0 ℃
Used liquid : Water with ice and boiling water
Dipping time:5 min. par each temp.
Transfer time:10 sec.
Number of cycles:10 cycles
MS5F6060
6
13
H04-004-03a
Reliability Test Items
Test
cate-
gories
Test items
1High temperature
Reverse Bias
Test methods and conditions
Reference
NumberAccept-
norms
ofance
EIAJ ED-4701
samplenumber
5( 0 : 1 )
(Aug.-2001 edition)
Test Method 101
Test temp.
Bias Voltage
Bias Method
E
n
d
u
r
a
n
c
E
e
n
T
d
u
e
r
s
a
t
s
n
c
e
T
e
s
t
s
Test duration
2High temperature
Bias (for gate)Test temp.
Bias Voltage
Bias Method
Test duration
3Temperature
Humidity BiasTest temp.
Relative humidity
Bias Voltage
Bias Method
Test duration
ON time
OFF time
Test temp.
Number of cycles
:Ta = 125±5 ℃
(Tj
≦
150
℃
)
:VC = 0.8×VCES
:Applied DC voltage to C-E
VGE = 0V
:1000hr.
Test Method 101
5( 0 : 1 )
:Ta = 125±5 ℃
(Tj
≦
150
℃
)
:VC = VGE = +20V or -20V
:Applied DC voltage to G-E
VCE = 0V
:1000hr.
:
:
:
:
:
:
:
:
:
85±2 C
85±5%
VC = 0.8×VCES
Applied DC voltage to C-E
VGE = 0V
1000hr.
2 sec.
18 sec.