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2MBI75U4A-120

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2024年3月22日发(作者:暨凌寒)

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

IGBT MODULE

2MBI75U4A-120

MS5F 6060

Mar. 09 ’05

Mar. 09 ’05

ita

ka

MS5F6060

1

13

H04-004-07b

R e v i s e d R e c o r d s

Date

Classi-

fication

t

Applied

date

Issued

date

DrawnCheckedCheckedApproved

Mar.-09 -’05

Enactment

ka

MS5F6060

2

13

H04-004-06b

2MBI75U4A-120

1. Outline Drawing ( Unit : mm )

2. Equivalent circuit

MS5F6060

3

13

H04-004-03a

3. Absolute Maximum Ratings ( at Tc= 25

o

C unless otherwise specified )

Items

Collector-Emitter voltage

Gate-Emitter voltage

Symbols

VCES

VGES

Ic

Collector currentIcp

-Ic

-Ic pulse

Pc

Tj

Tstg

Continuous

1ms

1ms

1 device

Tc=25

o

C

Tc=80

o

C

Tc=25

o

C

Tc=80

o

C

Conditions

Collector Power Dissipation

Junction temperature

Storage temperature

Isolation

between terminal and copper base (*1)VisoAC : 1min.

voltage

Screw

Mounting (*2)

-

Terminals (*2)

Torque

(*1) All terminals should be connected together when isolation test will be done.

(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)

Maximum

Units

Ratings

1200V

±20V

100

75

200

A

150

75

150

400W

+150

o

C

-40 to +125

2500

3.5

VAC

N m

4. Electrical characteristics ( at Tj= 25

o

C unless otherwise specified )

Items

Zero gate voltage

collector current

Gate-Emitter

leakage current

Gate-Emitter

threshold voltage

Collector-Emitter

saturation voltage

Input capacitance

Turn-on time

Turn-off time

Symbols

ICES

IGES

VGE(th)

VCE(sat)

(terminal)

VCE(sat)

(chip)

Cies

ton

tr

tr(i)

toff

tf

VF

(terminal)

VF

(chip)

trr

Conditions

VCE=1200V

VGE=0V

VCE=0V

VGE=±20V

VCE=20V

Ic=75mA

Ic=75A

VGE=15V

Characteristics

.

-

-

4.5

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

6.5

2.05

2.25

1.90

2.10

8

0.32

0.10

0.03

0.41

0.07

1.80

1.90

1.65

1.75

-

1.39

1.0

200

8.5

2.20

-

2.05

-

-

1.20

0.60

-

1.00

0.30

1.95

-

1.80

-

0.35

-

Units

mA

nA

V

Tj=25

o

C

Tj=125

o

C

Tj=25

o

C

Tj=125

o

C

VCE=10V,VGE=0V,f=1MHz

Vcc=600V

Ic=75A

VGE=±15V

RG=9.1Ω

IF=75A

VGE=0V

Tj=25

o

C

Tj=125

o

C

Tj=25

o

C

Tj=125

o

C

V

nF

us

Forward on voltageV

us

Reverse recovery timeIF=75A

Lead resistance,

R lead

terminal-chip (*3)

(*3) Biggest internal terminal resistance among arm.

MS5F6060

4

13

H04-004-03a

5. Thermal resistance characteristics

Items

Thermal resistance(1device)

Symbols

Rth(j-c)

IGBT

FWD

Conditions

Characteristics

.

--0.31

--0.48

Units

o

Contact Thermal resistance

Rth(c-f)with Thermal Compound -0.05-

(1 device) (*4)

(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.

C/W

6. Indication on module

Logo of production

2MBI75U4A-120

75A 1200V

.

7. Applicable category

Place of manufacturing (code)

This specification is applied to IGBT-Module named 2MBI75U4A-120.

8. Storage and transportation notes

The module should be stored at a standard temperature of 5 to 35

o

C and humidity of 45 to 75% .

Store modules in a place with few temperature changes in order to avoid condensation on the

module surface.

Avoid exposure to corrosive gases and dust.

Avoid excessive external force on the module.

Store modules with unprocessed terminals.

Do not drop or otherwise shock the modules when transporting.

9. Definitions of switching time

~~

90%

0V

L

0V

V

GE

t

rr

I

rr

90%

~~

V

CE

Vcc

Ic

90%

R

G

V

GE

V

CE

Ic

0V

0A

t

r(i)

t

r

t

on

t

off

~~

Ic

10%10%

V

CE

t

f

10%

10. Packing and Labeling

Display on the packing box

- Logo of production

- Type name

- Lot No

- Products quantity in a packing box

MS5F6060

5

13

H04-004-03a

11. Reliability test results

Reliability Test Items

Test

cate-

gories

Test items

1Terminal Strength

(Pull test)

2Mounting Strength

Pull force

Test time

Screw torque

Test time

Test methods and conditions

:

:

:

:

40N

10±1 sec.

2.5 ~ 3.5 N・m (M5)

10±1 sec.

Reference

NumberAccept-

norms

ofance

EIAJ ED-4701

samplenumber

5

5

( 0 : 1 )

( 0 : 1 )

(Aug.-2001 edition)

M

e

c

h

a

n

i

c

a

l

T

e

s

t

s

Test Method 401

Method

Test Method 402

method

Test Method 403

Reference 1

Condition code B

3Vibration

4Shock

1High Temperature

Storage

2Low Temperature

Storage

3Temperature

Humidity

Storage

4Unsaturated

Pressurized Vapor

Range of frequency : 10 ~ 500Hz

Sweeping time:15 min.

Acceleration:

100m/s

2

Sweeping direction : Each X,Y,Z axis

Test time:6 hr. (2hr./direction)

Maximum acceleration:

5000m/s

2

Pulse width:1.0msec.

Direction:Each X,Y,Z axis

Test time:3 times/direction

Storage temp.:125±5 ℃

Test duration:1000hr.

Storage temp.:-40±5 ℃

Test duration:1000hr.

Storage temp.:85±2 ℃

Relative humidity:85±5%

Test duration:1000hr.

Test temp.:120±2 ℃

Test humidity :85±5%

Test duration:96hr.

Test temp.: Low temp. -40

±

5

High temp. 125 ±5 ℃

RT 5 ~ 35

:High ~ RT ~ Low ~ RT

1hr. 0.5hr. 1hr. 0.5hr.

:100 cycles

+0

:

High temp. 100

+5

-0

-5

5( 0 : 1 )

Test Method 404

Condition code B

5( 0 : 1 )

Test Method 201

Test Method 202

Test Method 103

Test code C

Test Method 103

Test code E

Test Method 105

5

5

5

( 0 : 1 )

( 0 : 1 )

( 0 : 1 )

5( 0 : 1 )

E

n

v

i

r

o

n

m

e

n

t

T

e

s

t

s

5Temperature

Cycle

5( 0 : 1 )

Dwell time

Number of cycles

6Thermal Shock

Test temp.

Test Method 307

method

Condition code A

5( 0 : 1 )

Low temp. 0 ℃

Used liquid : Water with ice and boiling water

Dipping time:5 min. par each temp.

Transfer time:10 sec.

Number of cycles:10 cycles

MS5F6060

6

13

H04-004-03a

Reliability Test Items

Test

cate-

gories

Test items

1High temperature

Reverse Bias

Test methods and conditions

Reference

NumberAccept-

norms

ofance

EIAJ ED-4701

samplenumber

5( 0 : 1 )

(Aug.-2001 edition)

Test Method 101

Test temp.

Bias Voltage

Bias Method

E

n

d

u

r

a

n

c

E

e

n

T

d

u

e

r

s

a

t

s

n

c

e

T

e

s

t

s

Test duration

2High temperature

Bias (for gate)Test temp.

Bias Voltage

Bias Method

Test duration

3Temperature

Humidity BiasTest temp.

Relative humidity

Bias Voltage

Bias Method

Test duration

ON time

OFF time

Test temp.

Number of cycles

:Ta = 125±5 ℃

(Tj

150

)

:VC = 0.8×VCES

:Applied DC voltage to C-E

VGE = 0V

:1000hr.

Test Method 101

5( 0 : 1 )

:Ta = 125±5 ℃

(Tj

150

)

:VC = VGE = +20V or -20V

:Applied DC voltage to G-E

VCE = 0V

:1000hr.

:

:

:

:

:

:

:

:

:

85±2 C

85±5%

VC = 0.8×VCES

Applied DC voltage to C-E

VGE = 0V

1000hr.

2 sec.

18 sec.

2024年3月22日发(作者:暨凌寒)

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

IGBT MODULE

2MBI75U4A-120

MS5F 6060

Mar. 09 ’05

Mar. 09 ’05

ita

ka

MS5F6060

1

13

H04-004-07b

R e v i s e d R e c o r d s

Date

Classi-

fication

t

Applied

date

Issued

date

DrawnCheckedCheckedApproved

Mar.-09 -’05

Enactment

ka

MS5F6060

2

13

H04-004-06b

2MBI75U4A-120

1. Outline Drawing ( Unit : mm )

2. Equivalent circuit

MS5F6060

3

13

H04-004-03a

3. Absolute Maximum Ratings ( at Tc= 25

o

C unless otherwise specified )

Items

Collector-Emitter voltage

Gate-Emitter voltage

Symbols

VCES

VGES

Ic

Collector currentIcp

-Ic

-Ic pulse

Pc

Tj

Tstg

Continuous

1ms

1ms

1 device

Tc=25

o

C

Tc=80

o

C

Tc=25

o

C

Tc=80

o

C

Conditions

Collector Power Dissipation

Junction temperature

Storage temperature

Isolation

between terminal and copper base (*1)VisoAC : 1min.

voltage

Screw

Mounting (*2)

-

Terminals (*2)

Torque

(*1) All terminals should be connected together when isolation test will be done.

(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)

Maximum

Units

Ratings

1200V

±20V

100

75

200

A

150

75

150

400W

+150

o

C

-40 to +125

2500

3.5

VAC

N m

4. Electrical characteristics ( at Tj= 25

o

C unless otherwise specified )

Items

Zero gate voltage

collector current

Gate-Emitter

leakage current

Gate-Emitter

threshold voltage

Collector-Emitter

saturation voltage

Input capacitance

Turn-on time

Turn-off time

Symbols

ICES

IGES

VGE(th)

VCE(sat)

(terminal)

VCE(sat)

(chip)

Cies

ton

tr

tr(i)

toff

tf

VF

(terminal)

VF

(chip)

trr

Conditions

VCE=1200V

VGE=0V

VCE=0V

VGE=±20V

VCE=20V

Ic=75mA

Ic=75A

VGE=15V

Characteristics

.

-

-

4.5

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

6.5

2.05

2.25

1.90

2.10

8

0.32

0.10

0.03

0.41

0.07

1.80

1.90

1.65

1.75

-

1.39

1.0

200

8.5

2.20

-

2.05

-

-

1.20

0.60

-

1.00

0.30

1.95

-

1.80

-

0.35

-

Units

mA

nA

V

Tj=25

o

C

Tj=125

o

C

Tj=25

o

C

Tj=125

o

C

VCE=10V,VGE=0V,f=1MHz

Vcc=600V

Ic=75A

VGE=±15V

RG=9.1Ω

IF=75A

VGE=0V

Tj=25

o

C

Tj=125

o

C

Tj=25

o

C

Tj=125

o

C

V

nF

us

Forward on voltageV

us

Reverse recovery timeIF=75A

Lead resistance,

R lead

terminal-chip (*3)

(*3) Biggest internal terminal resistance among arm.

MS5F6060

4

13

H04-004-03a

5. Thermal resistance characteristics

Items

Thermal resistance(1device)

Symbols

Rth(j-c)

IGBT

FWD

Conditions

Characteristics

.

--0.31

--0.48

Units

o

Contact Thermal resistance

Rth(c-f)with Thermal Compound -0.05-

(1 device) (*4)

(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.

C/W

6. Indication on module

Logo of production

2MBI75U4A-120

75A 1200V

.

7. Applicable category

Place of manufacturing (code)

This specification is applied to IGBT-Module named 2MBI75U4A-120.

8. Storage and transportation notes

The module should be stored at a standard temperature of 5 to 35

o

C and humidity of 45 to 75% .

Store modules in a place with few temperature changes in order to avoid condensation on the

module surface.

Avoid exposure to corrosive gases and dust.

Avoid excessive external force on the module.

Store modules with unprocessed terminals.

Do not drop or otherwise shock the modules when transporting.

9. Definitions of switching time

~~

90%

0V

L

0V

V

GE

t

rr

I

rr

90%

~~

V

CE

Vcc

Ic

90%

R

G

V

GE

V

CE

Ic

0V

0A

t

r(i)

t

r

t

on

t

off

~~

Ic

10%10%

V

CE

t

f

10%

10. Packing and Labeling

Display on the packing box

- Logo of production

- Type name

- Lot No

- Products quantity in a packing box

MS5F6060

5

13

H04-004-03a

11. Reliability test results

Reliability Test Items

Test

cate-

gories

Test items

1Terminal Strength

(Pull test)

2Mounting Strength

Pull force

Test time

Screw torque

Test time

Test methods and conditions

:

:

:

:

40N

10±1 sec.

2.5 ~ 3.5 N・m (M5)

10±1 sec.

Reference

NumberAccept-

norms

ofance

EIAJ ED-4701

samplenumber

5

5

( 0 : 1 )

( 0 : 1 )

(Aug.-2001 edition)

M

e

c

h

a

n

i

c

a

l

T

e

s

t

s

Test Method 401

Method

Test Method 402

method

Test Method 403

Reference 1

Condition code B

3Vibration

4Shock

1High Temperature

Storage

2Low Temperature

Storage

3Temperature

Humidity

Storage

4Unsaturated

Pressurized Vapor

Range of frequency : 10 ~ 500Hz

Sweeping time:15 min.

Acceleration:

100m/s

2

Sweeping direction : Each X,Y,Z axis

Test time:6 hr. (2hr./direction)

Maximum acceleration:

5000m/s

2

Pulse width:1.0msec.

Direction:Each X,Y,Z axis

Test time:3 times/direction

Storage temp.:125±5 ℃

Test duration:1000hr.

Storage temp.:-40±5 ℃

Test duration:1000hr.

Storage temp.:85±2 ℃

Relative humidity:85±5%

Test duration:1000hr.

Test temp.:120±2 ℃

Test humidity :85±5%

Test duration:96hr.

Test temp.: Low temp. -40

±

5

High temp. 125 ±5 ℃

RT 5 ~ 35

:High ~ RT ~ Low ~ RT

1hr. 0.5hr. 1hr. 0.5hr.

:100 cycles

+0

:

High temp. 100

+5

-0

-5

5( 0 : 1 )

Test Method 404

Condition code B

5( 0 : 1 )

Test Method 201

Test Method 202

Test Method 103

Test code C

Test Method 103

Test code E

Test Method 105

5

5

5

( 0 : 1 )

( 0 : 1 )

( 0 : 1 )

5( 0 : 1 )

E

n

v

i

r

o

n

m

e

n

t

T

e

s

t

s

5Temperature

Cycle

5( 0 : 1 )

Dwell time

Number of cycles

6Thermal Shock

Test temp.

Test Method 307

method

Condition code A

5( 0 : 1 )

Low temp. 0 ℃

Used liquid : Water with ice and boiling water

Dipping time:5 min. par each temp.

Transfer time:10 sec.

Number of cycles:10 cycles

MS5F6060

6

13

H04-004-03a

Reliability Test Items

Test

cate-

gories

Test items

1High temperature

Reverse Bias

Test methods and conditions

Reference

NumberAccept-

norms

ofance

EIAJ ED-4701

samplenumber

5( 0 : 1 )

(Aug.-2001 edition)

Test Method 101

Test temp.

Bias Voltage

Bias Method

E

n

d

u

r

a

n

c

E

e

n

T

d

u

e

r

s

a

t

s

n

c

e

T

e

s

t

s

Test duration

2High temperature

Bias (for gate)Test temp.

Bias Voltage

Bias Method

Test duration

3Temperature

Humidity BiasTest temp.

Relative humidity

Bias Voltage

Bias Method

Test duration

ON time

OFF time

Test temp.

Number of cycles

:Ta = 125±5 ℃

(Tj

150

)

:VC = 0.8×VCES

:Applied DC voltage to C-E

VGE = 0V

:1000hr.

Test Method 101

5( 0 : 1 )

:Ta = 125±5 ℃

(Tj

150

)

:VC = VGE = +20V or -20V

:Applied DC voltage to G-E

VCE = 0V

:1000hr.

:

:

:

:

:

:

:

:

:

85±2 C

85±5%

VC = 0.8×VCES

Applied DC voltage to C-E

VGE = 0V

1000hr.

2 sec.

18 sec.

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