2024年3月23日发(作者：六娴淑)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
(PNP)
BC808
TRANSISTOR
FEATURES
z
Suitable for AF-Driver stages and low power output stages
z
Complement to BC818
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
j
T
stg
SOT-23 Plastic-Encapsulate Transistors
SOT-23
1.
BASE
2.
EMITTER
3.
COLLECTOR
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-30 V
-25
-5
-0.8
300
150
-65-150
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
V
CE
=
-1
V, I
C
=
-300
mA
I
C
=-
500
mA, I
B
=
-50
mA
V
CE
=
-1
V, I
C
=
-300
mA
V
CE
=
-5
V, I
C
=
-10
mA, f=
50
MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
Test conditions
I
C
=-100μA, I
E
=0
I
C
=
-10
mA, I
B
=0
I
E
=
-100
μA, I
C
=0
V
CB
=
-25
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-1
V, I
C
=
-100
mA
Min Typ Max Unit
V
V
V
-30
-25
-5
-0.1
-0.1
630
μA
μA
V
V
100
60
-0.7
-1.2
f
T
C
ob
100
12
MHz
pF
CLASSIFICATION OF h
FE
Rank
Range h
FE(1)
Marking
16 25 40
100-250 160-400 250-630
5E 5F 5G
A,May,2011
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
.
0.9001.150
0.0000.100
0.9001.050
0.3000.500
0.0800.150
2.8003.000
1.2001.400
2.2502.550
0.950 TYP.
1.8002.000
0.550 REF.
0.3000.500
0°8°
Dimensions In Inches
.
0.0350.045
0.0000.004
0.0350.041
0.0120.020
0.0030.006
0.1100.118
0.0470.055
0.0890.100
0.037 TYP.
0.0710.079
0.022 REF.
0.0120.020
0°8°
2024年3月23日发(作者：六娴淑)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
(PNP)
BC808
TRANSISTOR
FEATURES
z
Suitable for AF-Driver stages and low power output stages
z
Complement to BC818
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
j
T
stg
SOT-23 Plastic-Encapsulate Transistors
SOT-23
1.
BASE
2.
EMITTER
3.
COLLECTOR
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-30 V
-25
-5
-0.8
300
150
-65-150
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
V
CE
=
-1
V, I
C
=
-300
mA
I
C
=-
500
mA, I
B
=
-50
mA
V
CE
=
-1
V, I
C
=
-300
mA
V
CE
=
-5
V, I
C
=
-10
mA, f=
50
MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
Test conditions
I
C
=-100μA, I
E
=0
I
C
=
-10
mA, I
B
=0
I
E
=
-100
μA, I
C
=0
V
CB
=
-25
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-1
V, I
C
=
-100
mA
Min Typ Max Unit
V
V
V
-30
-25
-5
-0.1
-0.1
630
μA
μA
V
V
100
60
-0.7
-1.2
f
T
C
ob
100
12
MHz
pF
CLASSIFICATION OF h
FE
Rank
Range h
FE(1)
Marking
16 25 40
100-250 160-400 250-630
5E 5F 5G
A,May,2011
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
.
0.9001.150
0.0000.100
0.9001.050
0.3000.500
0.0800.150
2.8003.000
1.2001.400
2.2502.550
0.950 TYP.
1.8002.000
0.550 REF.
0.3000.500
0°8°
Dimensions In Inches
.
0.0350.045
0.0000.004
0.0350.041
0.0120.020
0.0030.006
0.1100.118
0.0470.055
0.0890.100
0.037 TYP.
0.0710.079
0.022 REF.
0.0120.020
0°8°