2024年4月3日发(作者：丁致)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
(PNP)
2SA1145
TRANSISTOR
FEATURES
z
Complementary to 2SC2705
z
Small Collector Output Capacitance: C
ob
=2.5pF(Typ.)
High Transition Frequency: f
T
=200MHz(Typ.)
z
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
1. EMITTER
2. COLLECTOR
3. BASE
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-150
-150
-5
-50
800
150
-55-150
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test conditions
I
C
=-100 μA, I
E
=0
Min Typ MaxUnit
-150 V
I
C
=-1mA, I
B
=0 -150 V
I
E
=-100 μA, I
C
=0
-5 V
V
CB
=-150 V, I
E
=0 -0.1
μA
V
EB
=-5 V, I
C
=0 -0.1
μA
V
CE
=-5 V, I
C
=-10mA 80 240
I
C
=-10mA, I
B
=-1mA -1 V
V
CE
=-5 V, I
C
=-10mA -0.8 V
V
CE
=-5 V, I
C
=-10mA 200 MHz
V
CB
=-10 V, I
E
=0, f=1 MHz 2.5 pF
CLASSIFICATION OF h
FE
Rank
Range
Marking
O Y
80-160 120-240
A,Jun,2011
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
b
b1
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
.
4.7005.100
1.7302.030
0.4000.600
0.9001.100
0.4000.500
5.8006.200
4.000
8.4008.800
1.500 TYP.
2.9003.100
13.80014.200
1.600
0.0000.380
Dimensions In Inches
.
0.1850.201
0.0680.080
0.0160.024
0.0350.043
0.0160.020
0.2280.244
0.157
0.3310.346
0.059 TYP.
0.1140.122
0.5430.559
0.063
0.0000.015
【
南京南山半导体有限公司 — 长电三极管选型资料
】
【
南京南山半导体有限公司 — 长电三极管选型资料
】
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Item
Body width
Body height
Body thickness
Lead wire diameter
Lead wire diameter1
Pitch of component
Feed hole pitch
Hole center to component center
Lead to lead distance
Component alignment, F-R
Type width
Hole down tape width
Hole position
Hole down tape position
Height of component from tape center
Lead wire clinch height
Lead wire(tape portion)
Feed hole diameter
Taped Lead Thickness
Carrier Tape Thickness
Position of hole
Component alignment
Symbol
A1
A
T
d
d1
P
P0
P2
F1,F2
△
h
W
W0
W1
W2
H
H0
L1
D0
t1
t2
P1
△
P
Value & Tolerance
6.0 ± 0.2
8.6 ± 0.2
4.9 ± 0.2
0.5 ± 0.05
1.0 ± 0.05
12.7 ± 0.3
12.7 ± 0.2
6.35 ± 0.3
2.5 ± 0.3
0 ± 1.0
18.0 + 1.0, - 0.5
6.0 ± 0.5
9.0 ± 0.5
1.0 MAX.
19.0 ±1.0
16.0 ± 0.5
2.5 MIN.
4.0 ± 0.2
0.4 ± 0.05
0.2 ± 0.05
3.85 ± 0.03
0 ± 1.0
Unit : mm
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Sponge strip
Sponge strip
2000 pcs
The top gasket
Label on the Inner Box
Inner Box:
333 mm×245mm×43mm
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
QA Label
Outer Box:
573 mm× 404mm× ２６６mm
Label on the Outer Box
The top gasket
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Inner Box:
240 mm×165mm×95mm
Label on the Inner Box
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
QA Label
Outer Box:
525 mm× 360mm× 262mm
Label on the Outer Box
2024年4月3日发(作者：丁致)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
(PNP)
2SA1145
TRANSISTOR
FEATURES
z
Complementary to 2SC2705
z
Small Collector Output Capacitance: C
ob
=2.5pF(Typ.)
High Transition Frequency: f
T
=200MHz(Typ.)
z
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
1. EMITTER
2. COLLECTOR
3. BASE
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-150
-150
-5
-50
800
150
-55-150
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test conditions
I
C
=-100 μA, I
E
=0
Min Typ MaxUnit
-150 V
I
C
=-1mA, I
B
=0 -150 V
I
E
=-100 μA, I
C
=0
-5 V
V
CB
=-150 V, I
E
=0 -0.1
μA
V
EB
=-5 V, I
C
=0 -0.1
μA
V
CE
=-5 V, I
C
=-10mA 80 240
I
C
=-10mA, I
B
=-1mA -1 V
V
CE
=-5 V, I
C
=-10mA -0.8 V
V
CE
=-5 V, I
C
=-10mA 200 MHz
V
CB
=-10 V, I
E
=0, f=1 MHz 2.5 pF
CLASSIFICATION OF h
FE
Rank
Range
Marking
O Y
80-160 120-240
A,Jun,2011
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
b
b1
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
.
4.7005.100
1.7302.030
0.4000.600
0.9001.100
0.4000.500
5.8006.200
4.000
8.4008.800
1.500 TYP.
2.9003.100
13.80014.200
1.600
0.0000.380
Dimensions In Inches
.
0.1850.201
0.0680.080
0.0160.024
0.0350.043
0.0160.020
0.2280.244
0.157
0.3310.346
0.059 TYP.
0.1140.122
0.5430.559
0.063
0.0000.015
【
南京南山半导体有限公司 — 长电三极管选型资料
】
【
南京南山半导体有限公司 — 长电三极管选型资料
】
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Item
Body width
Body height
Body thickness
Lead wire diameter
Lead wire diameter1
Pitch of component
Feed hole pitch
Hole center to component center
Lead to lead distance
Component alignment, F-R
Type width
Hole down tape width
Hole position
Hole down tape position
Height of component from tape center
Lead wire clinch height
Lead wire(tape portion)
Feed hole diameter
Taped Lead Thickness
Carrier Tape Thickness
Position of hole
Component alignment
Symbol
A1
A
T
d
d1
P
P0
P2
F1,F2
△
h
W
W0
W1
W2
H
H0
L1
D0
t1
t2
P1
△
P
Value & Tolerance
6.0 ± 0.2
8.6 ± 0.2
4.9 ± 0.2
0.5 ± 0.05
1.0 ± 0.05
12.7 ± 0.3
12.7 ± 0.2
6.35 ± 0.3
2.5 ± 0.3
0 ± 1.0
18.0 + 1.0, - 0.5
6.0 ± 0.5
9.0 ± 0.5
1.0 MAX.
19.0 ±1.0
16.0 ± 0.5
2.5 MIN.
4.0 ± 0.2
0.4 ± 0.05
0.2 ± 0.05
3.85 ± 0.03
0 ± 1.0
Unit : mm
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Sponge strip
Sponge strip
2000 pcs
The top gasket
Label on the Inner Box
Inner Box:
333 mm×245mm×43mm
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
QA Label
Outer Box:
573 mm× 404mm× ２６６mm
Label on the Outer Box
The top gasket
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Inner Box:
240 mm×165mm×95mm
Label on the Inner Box
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
QA Label
Outer Box:
525 mm× 360mm× 262mm
Label on the Outer Box