2024年4月3日发(作者：绍璇玑)
元器件交易网
DS90LV031A
3V
LVDS
Quad
CMOS
Differential
Line
Driver
July1999
DS90LV031A
3VLVDSQuadCMOSDifferentialLineDriver
GeneralDescription
TheDS90LV031AisaquadCMOSdifferentiallinedriverde-
signedforapplicationsrequiringultralowpowerdissipation
iceisdesignedtosupportdata
ratesinexcessof400Mbps(200MHz)utilizingLowVoltage
DifferentialSignaling(LVDS)technology.
TheDS90LV031AacceptslowvoltageTTL/CMOSinputlev-
elsandtranslatesthemtolowvoltage(350mV)differential
tionthedriversupportsaTRI-STATE
®
functionthatmaybeusedtodisabletheoutputstage,dis-
ablingtheloadcurrent,andthusdroppingthedevicetoan
ultralowidlepowerstateof13mWtypical.
TheENandEN*inputsallowactiveLoworactiveHighcon-
blesarecommonto
90LV031Aandcompanionlinere-
ceiver(DS90LV032A)provideanewalternativetohigh
powerpsuedo-ECLdevicesforhighspeedpoint-to-pointin-
terfaceapplications.
Features
n
n
n
n
n
n
n
n
n
n
n
n
>
400Mbps(200MHz)switchingrates
0.1nstypicaldifferentialskew
0.4nsmaximumdifferentialskew
2.0nsmaximumpropagationdelay
3.3Vpowersupplydesign
±
350mVdifferentialsignaling
Lowpowerdissipation(13mWat3.3Vstatic)
Interoperablewithexisting5VLVDSdevices
CompatiblewithIEEE1596.3SCILVDSstandard
CompatiblewithTIA/EIA-644LVDSstandard
IndustrialandMilitaryoperatingtemperaturerange
AvailableinSOIC,TSSOPandCerpacksurfacemount
packaging
nStandardMicrocircuitDrawing(SMD)5962-9865201
ConnectionDiagram
Dual-In-Line
FunctionalDiagram
DS100095-1
OrderNumberDS90LV031ATM
orDS90LV031ATMTC
orDS90LV031AW
SeeNSPackageNumberM16AorMTC16orW16A
TruthTable
DRIVER
Enables
EN
L
EN
*
H
Input
D
IN
X
L
H
Z
L
H
Outputs
D
OUT+
D
OUT−
Z
H
L
Allothercombinationsof
ENABLEinputs
TRI-STATE
®
isaregisteredtrademarkofNationalSemiconductorCorporation.
©
元器件交易网
AbsoluteMaximumRatings
(Note1)
IfMilitary/Aerospacespecifieddevicesarerequired,
pleasecontacttheNationalSemiconductorSalesOffice/
Distributorsforavailabilityandspecifications.
SupplyVoltage(V
CC
)−0.3Vto+4V
−0.3Vto(V
CC
+0.3V)
InputVoltage(D
IN
)
−0.3Vto(V
CC
+0.3V)
EnableInputVoltage(EN,EN
*
)
−0.3Vto+3.9V
OutputVoltage(D
OUT+
,D
OUT−
)
ShortCircuitDuration
Continuous
(D
OUT+
,D
OUT−
)
MaximumPackagePowerDissipation
@
+25˚C
MPackage1088mW
MTCPackage866mW
WPackage845mW
DerateMPackage8.5mW/˚Cabove+25˚C
DerateMTCPackage6.9mW/˚Cabove+25˚C
DerateWPackage6.8mW/˚Cabove+25˚C
StorageTemperatureRange
LeadTemperatureRange
Soldering(4sec.)
MaximumJunctionTemperature
ESDRating(Note10)
(HBM,1.5kΩ,100pF)
−65˚Cto+150˚C
+260˚C
+150˚C
≥6kV
RecommendedOperating
Conditions
SupplyVoltage(V
CC
)
OperatingFreeAir
Temperature(T
A
)
Industrial
Military
Min
+3.0
Typ
+3.3
Max
+3.6
Units
V
−40
-55
+25
+25
+85
+125
˚C
˚C
ElectricalCharacteristics
Oversupplyvoltageandoperatingtemperatureranges,unlessotherwisespecified.(Notes2,3,4)
Symbol
V
OD1
∆V
OD1
Parameter
DifferentialOutputVoltage
ChangeinMagnitudeofV
OD1
forComplementaryOutput
States
OffsetVoltage
ChangeinMagnitudeofV
OS
for
ComplementaryOutputStates
OutputVoltageHigh
OutputVoltageLow
InputVoltageHigh
InputVoltageLow
InputCurrent
InputCurrent
InputClampVoltage
OutputShortCircuitCurrent
V
IN
=
V
CC
or2.5V
V
IN
=
GNDor0.4V
I
CL
=
−18mA
ENABLED,(Note11)
D
IN
=V
CC
,D
OUT+
=0Vor
D
IN
=GND,D
OUT−
=0V
ENABLED,V
OD
=0V
(Note11)
V
OUT
=
0Vor3.6V,
V
CC
=
0VorOpen
EN=0.8VandEN*=2.0V
V
OUT
=
0VorV
CC
D
IN
=V
CC
orGND
R
L
=100ΩAllChannels,D
IN
=
V
CC
orGND(allinputs)
D
IN
=V
CC
orGND,
EN=GND,EN*=V
CC
V
CC
D
IN
,
EN,
EN*
0.90
2.0
GND
−10
−10
−1.5
D
OUT−
D
OUT+
Conditions
=
R
L
100Ω(
Figure1
)
Pin
D
OUT−
D
OUT+
Min
250
Typ
350
4
Max
450
35
Units
mV
|mV|
V
OS
∆V
OS
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
V
CL
I
OS
1.1251.25
5
1.38
1.03
1.375
25
1.6
V
CC
0.8
V
|mV|
V
V
V
V
µA
µA
V
mA
±
1
±
1
−0.8
−6.0
+10
+10
−9.0
I
OSD
I
OFF
I
OZ
I
CC
I
CCL
I
CCZ
DifferentialOutputShortCircuit
Current
Power-offLeakage
OutputTRI-STATECurrent
NoLoadSupplyCurrentDrivers
Enabled
LoadedSupplyCurrentDrivers
Enabled
NoLoadSupplyCurrentDrivers
Disabled
−6.0
−20
−10
−9.0
+20
+10
8.0
30
6.0
mA
µA
µA
mA
mA
mA
±
1
±
1
5.0
23
2.6
2
2024年4月3日发(作者：绍璇玑)
元器件交易网
DS90LV031A
3V
LVDS
Quad
CMOS
Differential
Line
Driver
July1999
DS90LV031A
3VLVDSQuadCMOSDifferentialLineDriver
GeneralDescription
TheDS90LV031AisaquadCMOSdifferentiallinedriverde-
signedforapplicationsrequiringultralowpowerdissipation
iceisdesignedtosupportdata
ratesinexcessof400Mbps(200MHz)utilizingLowVoltage
DifferentialSignaling(LVDS)technology.
TheDS90LV031AacceptslowvoltageTTL/CMOSinputlev-
elsandtranslatesthemtolowvoltage(350mV)differential
tionthedriversupportsaTRI-STATE
®
functionthatmaybeusedtodisabletheoutputstage,dis-
ablingtheloadcurrent,andthusdroppingthedevicetoan
ultralowidlepowerstateof13mWtypical.
TheENandEN*inputsallowactiveLoworactiveHighcon-
blesarecommonto
90LV031Aandcompanionlinere-
ceiver(DS90LV032A)provideanewalternativetohigh
powerpsuedo-ECLdevicesforhighspeedpoint-to-pointin-
terfaceapplications.
Features
n
n
n
n
n
n
n
n
n
n
n
n
>
400Mbps(200MHz)switchingrates
0.1nstypicaldifferentialskew
0.4nsmaximumdifferentialskew
2.0nsmaximumpropagationdelay
3.3Vpowersupplydesign
±
350mVdifferentialsignaling
Lowpowerdissipation(13mWat3.3Vstatic)
Interoperablewithexisting5VLVDSdevices
CompatiblewithIEEE1596.3SCILVDSstandard
CompatiblewithTIA/EIA-644LVDSstandard
IndustrialandMilitaryoperatingtemperaturerange
AvailableinSOIC,TSSOPandCerpacksurfacemount
packaging
nStandardMicrocircuitDrawing(SMD)5962-9865201
ConnectionDiagram
Dual-In-Line
FunctionalDiagram
DS100095-1
OrderNumberDS90LV031ATM
orDS90LV031ATMTC
orDS90LV031AW
SeeNSPackageNumberM16AorMTC16orW16A
TruthTable
DRIVER
Enables
EN
L
EN
*
H
Input
D
IN
X
L
H
Z
L
H
Outputs
D
OUT+
D
OUT−
Z
H
L
Allothercombinationsof
ENABLEinputs
TRI-STATE
®
isaregisteredtrademarkofNationalSemiconductorCorporation.
©
元器件交易网
AbsoluteMaximumRatings
(Note1)
IfMilitary/Aerospacespecifieddevicesarerequired,
pleasecontacttheNationalSemiconductorSalesOffice/
Distributorsforavailabilityandspecifications.
SupplyVoltage(V
CC
)−0.3Vto+4V
−0.3Vto(V
CC
+0.3V)
InputVoltage(D
IN
)
−0.3Vto(V
CC
+0.3V)
EnableInputVoltage(EN,EN
*
)
−0.3Vto+3.9V
OutputVoltage(D
OUT+
,D
OUT−
)
ShortCircuitDuration
Continuous
(D
OUT+
,D
OUT−
)
MaximumPackagePowerDissipation
@
+25˚C
MPackage1088mW
MTCPackage866mW
WPackage845mW
DerateMPackage8.5mW/˚Cabove+25˚C
DerateMTCPackage6.9mW/˚Cabove+25˚C
DerateWPackage6.8mW/˚Cabove+25˚C
StorageTemperatureRange
LeadTemperatureRange
Soldering(4sec.)
MaximumJunctionTemperature
ESDRating(Note10)
(HBM,1.5kΩ,100pF)
−65˚Cto+150˚C
+260˚C
+150˚C
≥6kV
RecommendedOperating
Conditions
SupplyVoltage(V
CC
)
OperatingFreeAir
Temperature(T
A
)
Industrial
Military
Min
+3.0
Typ
+3.3
Max
+3.6
Units
V
−40
-55
+25
+25
+85
+125
˚C
˚C
ElectricalCharacteristics
Oversupplyvoltageandoperatingtemperatureranges,unlessotherwisespecified.(Notes2,3,4)
Symbol
V
OD1
∆V
OD1
Parameter
DifferentialOutputVoltage
ChangeinMagnitudeofV
OD1
forComplementaryOutput
States
OffsetVoltage
ChangeinMagnitudeofV
OS
for
ComplementaryOutputStates
OutputVoltageHigh
OutputVoltageLow
InputVoltageHigh
InputVoltageLow
InputCurrent
InputCurrent
InputClampVoltage
OutputShortCircuitCurrent
V
IN
=
V
CC
or2.5V
V
IN
=
GNDor0.4V
I
CL
=
−18mA
ENABLED,(Note11)
D
IN
=V
CC
,D
OUT+
=0Vor
D
IN
=GND,D
OUT−
=0V
ENABLED,V
OD
=0V
(Note11)
V
OUT
=
0Vor3.6V,
V
CC
=
0VorOpen
EN=0.8VandEN*=2.0V
V
OUT
=
0VorV
CC
D
IN
=V
CC
orGND
R
L
=100ΩAllChannels,D
IN
=
V
CC
orGND(allinputs)
D
IN
=V
CC
orGND,
EN=GND,EN*=V
CC
V
CC
D
IN
,
EN,
EN*
0.90
2.0
GND
−10
−10
−1.5
D
OUT−
D
OUT+
Conditions
=
R
L
100Ω(
Figure1
)
Pin
D
OUT−
D
OUT+
Min
250
Typ
350
4
Max
450
35
Units
mV
|mV|
V
OS
∆V
OS
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
V
CL
I
OS
1.1251.25
5
1.38
1.03
1.375
25
1.6
V
CC
0.8
V
|mV|
V
V
V
V
µA
µA
V
mA
±
1
±
1
−0.8
−6.0
+10
+10
−9.0
I
OSD
I
OFF
I
OZ
I
CC
I
CCL
I
CCZ
DifferentialOutputShortCircuit
Current
Power-offLeakage
OutputTRI-STATECurrent
NoLoadSupplyCurrentDrivers
Enabled
LoadedSupplyCurrentDrivers
Enabled
NoLoadSupplyCurrentDrivers
Disabled
−6.0
−20
−10
−9.0
+20
+10
8.0
30
6.0
mA
µA
µA
mA
mA
mA
±
1
±
1
5.0
23
2.6
2