2024年4月9日发(作者：勾语蝶)
查询BFG520X供应商
DATA SHEET
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips SemiconductorsProduct specification
NPN 9 GHz wideband transistor
FEATURES
•High power gain
•Low noise figure
•High transition frequency
•Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
PINNING
PIN
1
2
3
4
1
2
3
4
1
2
3
4
BFG520; BFG520/X; BFG520/XR
DESCRIPTION
collector
base
emitter
emitter
fpage
43
BFG520 (Fig.1) Code: N36
1
Top view
2
MSB014
BFG520/X (Fig.1) Code: N42
collector
emitter
base
emitter
collector
emitter
base
emitter
Fig.1 SOT143B.
handbook, 2 columns
34
BFG520/XR (Fig.2) Code: N48
2
Top view
1
MSB035
Fig.2 SOT143R.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
c
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
up to T
s
=88°C; note1
I
C
=20mA; V
CE
=6 V; T
j
=25°C
I
C
= 0;V
CB
= 6 V; f = 1 MHz
I
C
=20mA; V
CE
=6 V; f = 1 GHz;
T
amb
=25°C
I
C
=20 mA; V
CE
=6 V; f = 900 MHz;
T
amb
=25°C
I
C
=20mA; V
CE
=6V; f = 2 GHz;
T
amb
=25°C
S
21
2
F
insertion power gain
noise figure
I
C
=20mA; V
CE
=6V; f = 900 MHz;
T
amb
=25°C
Γ
s
=Γ
opt
; I
c
=5 mA; V
CE
=6V;
f = 900 MHz; T
amb
=25°C
Γ
s
=Γ
opt
; I
C
=20mA; V
CE
=6 V;
f = 900 MHz; T
amb
=25°C
Γ
s
=Γ
opt
; I
C
=5mA; V
CE
= 8 V;
f = 2 GHz; T
amb
=25°C
September 19952
collector-emitter voltageopen base
CONDITIONS
open emitter−
−
−
−
60
−
−
−
−
17
−
−
−
MIN.
−
−
−
−
120
0.3
9
19
13
18
1.1
1.6
1.9
.
20
15
70
300
250
−
−
−
−
−
1.6
2.1
−
pF
GHz
dB
dB
dB
dB
dB
dB
UNIT
V
V
mA
mW
2024年4月9日发(作者：勾语蝶)
查询BFG520X供应商
DATA SHEET
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips SemiconductorsProduct specification
NPN 9 GHz wideband transistor
FEATURES
•High power gain
•Low noise figure
•High transition frequency
•Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
PINNING
PIN
1
2
3
4
1
2
3
4
1
2
3
4
BFG520; BFG520/X; BFG520/XR
DESCRIPTION
collector
base
emitter
emitter
fpage
43
BFG520 (Fig.1) Code: N36
1
Top view
2
MSB014
BFG520/X (Fig.1) Code: N42
collector
emitter
base
emitter
collector
emitter
base
emitter
Fig.1 SOT143B.
handbook, 2 columns
34
BFG520/XR (Fig.2) Code: N48
2
Top view
1
MSB035
Fig.2 SOT143R.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
c
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
up to T
s
=88°C; note1
I
C
=20mA; V
CE
=6 V; T
j
=25°C
I
C
= 0;V
CB
= 6 V; f = 1 MHz
I
C
=20mA; V
CE
=6 V; f = 1 GHz;
T
amb
=25°C
I
C
=20 mA; V
CE
=6 V; f = 900 MHz;
T
amb
=25°C
I
C
=20mA; V
CE
=6V; f = 2 GHz;
T
amb
=25°C
S
21
2
F
insertion power gain
noise figure
I
C
=20mA; V
CE
=6V; f = 900 MHz;
T
amb
=25°C
Γ
s
=Γ
opt
; I
c
=5 mA; V
CE
=6V;
f = 900 MHz; T
amb
=25°C
Γ
s
=Γ
opt
; I
C
=20mA; V
CE
=6 V;
f = 900 MHz; T
amb
=25°C
Γ
s
=Γ
opt
; I
C
=5mA; V
CE
= 8 V;
f = 2 GHz; T
amb
=25°C
September 19952
collector-emitter voltageopen base
CONDITIONS
open emitter−
−
−
−
60
−
−
−
−
17
−
−
−
MIN.
−
−
−
−
120
0.3
9
19
13
18
1.1
1.6
1.9
.
20
15
70
300
250
−
−
−
−
−
1.6
2.1
−
pF
GHz
dB
dB
dB
dB
dB
dB
UNIT
V
V
mA
mW