2024年4月10日发(作者：介芳苓)
1
Low power transistors selection guide
up to 1/2W
C A S E
general
purpose
RF – IF
BFR 92A
BFT 92
BFQ 81
BFS 17
BSR 14
low
noise
good high
dynamic dynamic
IC
≤
100
mA
IC
>
100
mA
BFR 540
amplifier
> 2.5 GHz
or
Ft ≥ 8GHz
Ft
≥ 20GHz
oscillator
low
voltage
low cons-
umption
SOT
23
SOT
323
SoT
143
SoT
343
SoT
89
SoT
223
SoT
37
plastic
AT 00511
BFG 92A
HSMX 3655
BFQ 81 - 29P BFR 93A
BFR 93A BFR 520
BRF 182 NE 85633
BFR 182 W BFR 106
BFR 520-540
MMBR 901
MRF 1027
NE 85633
BFG 67 - 93A MRF 9511
BFG520
-
540X BFG 520
HBFP 0420 BFP 193
BFP 181 - 182 BFP 196
183 -196 - 405 BFP 450
420 - 520
BFG 425W
MRF 5711
MRF 1027
BFQ 540
BFQ 19
BFR 520
BFR 540
BFR 182
BFR 182 W
BFR 92A BFT 25
MMBR 901MRF1027
BFT 92
oscillatore
low noise
BFG 540
BFG 10X
BFG 540 X
MRF 1027
MRF 9511
MRF 5711
BFG 10X
BFP 183 - 405
420 - 450
BFG 425W
BFG 520 - 540
BFP181 - 183
BFQ 17-18A BFQ 540
BFQ 540
BFP 405
BFP 420
BFP 450
BFP 520
HBFP 0420
BFG 425W
BFP 405
BFP 420
HBFP0420
AT 00511
BFP 520
up to 15 GHz
BFP 405
BFP 420
BFP 450
BFP 520
up to 12 GHz
HBFP0420
BFG 92A
BFG 541
BFG 235
BFR 90A BFR 91A
BFR 34A
BFG 35 BFG 198
BFG 97 -198 BFG 135-235BFG 541
BFG 193 BFG 541-591
BFQ 32 BFR 134
BFR 91A
BFR 96 S
+40dBm IP3
BFW92
AT 42085-86 MRF 559
AT 41486
BFG 96
BFG 195
AT 42035-10
21dBm 2 GHz
BFQ 57 - 72
BFQ 73S
BFP 91A
HXTR 3102
21dBm 2 GHz
HXTR 2101
18dBm 4 GHz
NE 21935
AT 41410
BFW30
2N 5179 high
gain
BFR 34A
BFR 90A
SoT
103
2SC 1070 BFG 195
MRF 536
AT 41486
AT 42085-86
AT 41486
AT42085-86
MRF 559
plastic
SoT
103
SoT
173
BFQ 70
BFQ 71
BFQ 75
BFQ 76
BFQ 66
BFQ 74
BFR 14C
BFQ 77
NE 21935
ceramic
or
golden
ceramic
BF155-161-185
AT42035-10
+20.5 dBm
a 4 GHz
HXTR 2101
HXTR 6103
BFQ 57-58
BFQ 66-74
BFQ 77-58
AT 41410
MRF 536
low noise
oscillator
AT 420…
BFR 14C
BFQ 57
BFQ 58
BFQ 75
BFQ 76
NE 21935
BFQ 70
BFQ 71
BFX 89
To 72
BFY 90
155
To 18
BF
2N 2221
metallic
2N 2369
2N 2894
BF 199
To 92
BF 497
509
plastico
BF
2N 3904
2N 1613
To 39
2N 1711
BFY64
metall.
BFW44
2SC 787
BF 155
BFW 30
2N 5179
2N 5109
BFY 64
BF 199
BF 509
2SC 2347
2N 5108
power
oscillator
case
with
heatsink
transistors used as
medium and high
power oscillator
HXTR 4103 NEX 2302-65
BFR 14C -BFQ 57-58
NE 243287 -2N 3866
NOTE:
= PNP transistor
***************************************************************++39.02.99487515fax++39.02.99489276
2
This table groups various devices suitable as HIGH DYNAMIC and MODERATE NOISE front-ends or post-amplifiers.
Here are quoted only the informations associated with noise, gain and dynamic. Other informations and prices are
available on the catalog pages. The purpose of this page is to group different devices (IC - FET - power transistors -
GaAsFET - power modules, etc..) all suitable for for high dynamic in reception
NF and Gain dynamic
type
cod.
vs. frequency and current absorption IP3 - IMD - 1dBCP ( P1dB)
AT 420…
ATF 54143
up to 2 GHz transistor, wide band Norton circuit 100-500MHz (VHF Comm 2-93) with results : 10 dB
G
Ic 10 mA 1.1dB
NF
IIP3 +17dBm -- Ic 16 mA 1.3 dB
NF
IIP3 +20dBm -- Ic 23 mA 1.5dB
NF
IIP3 +22dBm
they are a last generation GaAs-FETs especially designed as front-end for base
GaAsFet Phemt type
stations so they have high dynamic and very low noise, suitable for 50-3000MHz band.
OIP3 +36dBm
18 - 24 dBG 5-1000 MHz wide band,
BGD 802 +
CATV A class power
comprehensive descriptions in the next
very high dynamic
MHW 5222A
modules
pages, MHW 5222A has a particular very
high OIP3 > +40 dBm
etc…
low NF 3.5 - 4.5 dB
low power dual gate
2 or 4 FETs in parallel or push-pull give a good dynamic with a low NF
BF982 - 996
see article on EL. World 3-96
FET
OIP3 + 38 dBm @ 100 mA , very good
as HF-VHF-UHF second stage
up to 2 GHz trans.
BFG 135
( see various articles )
OIP3 + 40 dBm
up to 1.5 GHz trans.
900 MHz 12dBG 2.7dBNF @ 60mA
BFG 235
150 MHz - 1.3 dBNF @ 20 mA opt. IMD Ic 20 - 80 mA (see article on
up to 2 GHz trans.
BFG 195
500 MHz - 1.7dBNF @ 50 mA RR 11-98 in config. Norton config.)
OIP3 +34dBm Ic 40 mA
up to 2.5 GHz trans.
900 MHz 1.9dBNF 15dBG
BFG 541
opt. IMD Ic 60 - 80 mA
up to 1 GHz trans.
500 MHz - 17dBG @ 70 mA
BFG 591
OIP3 + 35dBm with 70 mA
up to 2 GHz trans.
900 MHz 16dBG with 50 mA
BFP 196
1.8 GHz : IP3 +29dBm P1dB +19dBm
up to 4 GHz trans.
1.8 GHz - 1.8 dBNF - 14dBG @ 50 mA
BFP 450
BFQ17
+
18A
up to 500 MHz trans.
thiese devices were designed for A class TV IMD Ic 60 mA and 80 mA
complementary of the famous BFR96
BFQ 32
pnp up to 900 MHz trans.
500 MHz 3.8 dBNF 14 dBG @ 50 mA
IP3 +27.5 dBm with only 20 mA
up to 2 GHz trans.
800 MHz 18dBG 1.5 dBNF with 20 mA
BFQ 70
800 MHz Ic 50 mA : IP3 +35 dBm
up to 1 GHz trans.
200 MHz 2.5dBNF - 22dBG @ 50 mA
BFQ 73S
IMD -60dBc with 2 400mV tones
Ic 40 - 50 mA
up to 1.3 GHz trans.
900 MHz 2dBNF - 13dBG @ 40 mA
BFQ 540
OIP3 + 34dBm with 40 mA
up to 2 GHz trans.
900 MHz 2dBNF
BFR 540
these devices are widely known uand used for IF , HF and VHF, they have a good dynamic
2N5109
TO39 transistor famous Norton circuit with transformer to OIP3 + 37dBm Ic 80mA
up to 500 MHz obtain a 1 - 150 MHz wide band crossmodulat. -57dBc with 5 mW out
2N5108
similar types 9dBG @ 80 mA and low noise 3dBNF @ 30 MHz
50 MHz 23dBG 2dBNF @ 30 mA
900 MHz 14dBG 2.1dBNF @ 30mA
2N5179
BFW 30
DV 1205 S
DV 1210 S
HXTR 5102
MRF 559
various types
up to 500 MHz trans.
21 dBG @ 200 MHz
power FET
> 1 GHz transistor
up to 1 GHz trans.
medium power
broad band
GaAsFet
MMIC for CATV
HF VHF MMIC
MMIC GaAsFet
OIP3 +34 dBm
CLY 10
CGY 21
GPA…..
GPD…..
MWA…..
ERA 5
respectively with a bias of 0.5A and 1 A (if they are used in transmission they provide
5W, or 10W in A class). They have about 7dB NF in VHF
500 MHz 4 dBNF Ic 25mA
4dBNF 14dBG @ 80 mA
at 500 MHz 1dBCP 0.5W
3dBNF 14dBG @ 30 mA
very good impedance matching with low
OIP3 +25dBm
VHF-UHF NF , 0.2 - 0.3 dBNF - 20 dBG
*******************@400mAP1dB +33dBm OIP3 +47dBm
20-1100 MHz < 4dBNF 20dBG @ 160mA OIP3 +32.5dBm @ 160 mA
see more detailed specifications in “ MMIC GPA GPD UTO MWA series “
dc 1 GHz <4.5 dBNF 20 dBG @ 65 mA OIP3 + 33dBm @ 65 mA
it is the wide band component with the lowest noise and good dynamic that we have,
MGA 62563
MMIC GaAsFet
see MMIC wide band amplifiers section for a more detailed explanation
Power
MRF136, with 28 Vcc and 0.5 A of current (14 W of bias), is exactly in the condition to
MRF 136
give20WRFpower,************************************************
Fet TMOS
noise amplifier has an extremely high dynamic range.
very high dynamic
MRF 171
MAALSS0034
MMIC with a NF of 1.6-1.8 dB in VHF-UHF the P1dB is +22dBm
I.C. IF amplif. Plessey
IF high dynamic as amplifier and also as AGC on AM - SSB receivers
SL 611C
See various articles on VHF Communications 2 -96 , 2-92 , 4-74 , 2-93
and on RR 5-91 , 11-98 , 7/8-03
***************************************************************++39.02.99487515fax++39.02.99489276
2024年4月10日发(作者：介芳苓)
1
Low power transistors selection guide
up to 1/2W
C A S E
general
purpose
RF – IF
BFR 92A
BFT 92
BFQ 81
BFS 17
BSR 14
low
noise
good high
dynamic dynamic
IC
≤
100
mA
IC
>
100
mA
BFR 540
amplifier
> 2.5 GHz
or
Ft ≥ 8GHz
Ft
≥ 20GHz
oscillator
low
voltage
low cons-
umption
SOT
23
SOT
323
SoT
143
SoT
343
SoT
89
SoT
223
SoT
37
plastic
AT 00511
BFG 92A
HSMX 3655
BFQ 81 - 29P BFR 93A
BFR 93A BFR 520
BRF 182 NE 85633
BFR 182 W BFR 106
BFR 520-540
MMBR 901
MRF 1027
NE 85633
BFG 67 - 93A MRF 9511
BFG520
-
540X BFG 520
HBFP 0420 BFP 193
BFP 181 - 182 BFP 196
183 -196 - 405 BFP 450
420 - 520
BFG 425W
MRF 5711
MRF 1027
BFQ 540
BFQ 19
BFR 520
BFR 540
BFR 182
BFR 182 W
BFR 92A BFT 25
MMBR 901MRF1027
BFT 92
oscillatore
low noise
BFG 540
BFG 10X
BFG 540 X
MRF 1027
MRF 9511
MRF 5711
BFG 10X
BFP 183 - 405
420 - 450
BFG 425W
BFG 520 - 540
BFP181 - 183
BFQ 17-18A BFQ 540
BFQ 540
BFP 405
BFP 420
BFP 450
BFP 520
HBFP 0420
BFG 425W
BFP 405
BFP 420
HBFP0420
AT 00511
BFP 520
up to 15 GHz
BFP 405
BFP 420
BFP 450
BFP 520
up to 12 GHz
HBFP0420
BFG 92A
BFG 541
BFG 235
BFR 90A BFR 91A
BFR 34A
BFG 35 BFG 198
BFG 97 -198 BFG 135-235BFG 541
BFG 193 BFG 541-591
BFQ 32 BFR 134
BFR 91A
BFR 96 S
+40dBm IP3
BFW92
AT 42085-86 MRF 559
AT 41486
BFG 96
BFG 195
AT 42035-10
21dBm 2 GHz
BFQ 57 - 72
BFQ 73S
BFP 91A
HXTR 3102
21dBm 2 GHz
HXTR 2101
18dBm 4 GHz
NE 21935
AT 41410
BFW30
2N 5179 high
gain
BFR 34A
BFR 90A
SoT
103
2SC 1070 BFG 195
MRF 536
AT 41486
AT 42085-86
AT 41486
AT42085-86
MRF 559
plastic
SoT
103
SoT
173
BFQ 70
BFQ 71
BFQ 75
BFQ 76
BFQ 66
BFQ 74
BFR 14C
BFQ 77
NE 21935
ceramic
or
golden
ceramic
BF155-161-185
AT42035-10
+20.5 dBm
a 4 GHz
HXTR 2101
HXTR 6103
BFQ 57-58
BFQ 66-74
BFQ 77-58
AT 41410
MRF 536
low noise
oscillator
AT 420…
BFR 14C
BFQ 57
BFQ 58
BFQ 75
BFQ 76
NE 21935
BFQ 70
BFQ 71
BFX 89
To 72
BFY 90
155
To 18
BF
2N 2221
metallic
2N 2369
2N 2894
BF 199
To 92
BF 497
509
plastico
BF
2N 3904
2N 1613
To 39
2N 1711
BFY64
metall.
BFW44
2SC 787
BF 155
BFW 30
2N 5179
2N 5109
BFY 64
BF 199
BF 509
2SC 2347
2N 5108
power
oscillator
case
with
heatsink
transistors used as
medium and high
power oscillator
HXTR 4103 NEX 2302-65
BFR 14C -BFQ 57-58
NE 243287 -2N 3866
NOTE:
= PNP transistor
***************************************************************++39.02.99487515fax++39.02.99489276
2
This table groups various devices suitable as HIGH DYNAMIC and MODERATE NOISE front-ends or post-amplifiers.
Here are quoted only the informations associated with noise, gain and dynamic. Other informations and prices are
available on the catalog pages. The purpose of this page is to group different devices (IC - FET - power transistors -
GaAsFET - power modules, etc..) all suitable for for high dynamic in reception
NF and Gain dynamic
type
cod.
vs. frequency and current absorption IP3 - IMD - 1dBCP ( P1dB)
AT 420…
ATF 54143
up to 2 GHz transistor, wide band Norton circuit 100-500MHz (VHF Comm 2-93) with results : 10 dB
G
Ic 10 mA 1.1dB
NF
IIP3 +17dBm -- Ic 16 mA 1.3 dB
NF
IIP3 +20dBm -- Ic 23 mA 1.5dB
NF
IIP3 +22dBm
they are a last generation GaAs-FETs especially designed as front-end for base
GaAsFet Phemt type
stations so they have high dynamic and very low noise, suitable for 50-3000MHz band.
OIP3 +36dBm
18 - 24 dBG 5-1000 MHz wide band,
BGD 802 +
CATV A class power
comprehensive descriptions in the next
very high dynamic
MHW 5222A
modules
pages, MHW 5222A has a particular very
high OIP3 > +40 dBm
etc…
low NF 3.5 - 4.5 dB
low power dual gate
2 or 4 FETs in parallel or push-pull give a good dynamic with a low NF
BF982 - 996
see article on EL. World 3-96
FET
OIP3 + 38 dBm @ 100 mA , very good
as HF-VHF-UHF second stage
up to 2 GHz trans.
BFG 135
( see various articles )
OIP3 + 40 dBm
up to 1.5 GHz trans.
900 MHz 12dBG 2.7dBNF @ 60mA
BFG 235
150 MHz - 1.3 dBNF @ 20 mA opt. IMD Ic 20 - 80 mA (see article on
up to 2 GHz trans.
BFG 195
500 MHz - 1.7dBNF @ 50 mA RR 11-98 in config. Norton config.)
OIP3 +34dBm Ic 40 mA
up to 2.5 GHz trans.
900 MHz 1.9dBNF 15dBG
BFG 541
opt. IMD Ic 60 - 80 mA
up to 1 GHz trans.
500 MHz - 17dBG @ 70 mA
BFG 591
OIP3 + 35dBm with 70 mA
up to 2 GHz trans.
900 MHz 16dBG with 50 mA
BFP 196
1.8 GHz : IP3 +29dBm P1dB +19dBm
up to 4 GHz trans.
1.8 GHz - 1.8 dBNF - 14dBG @ 50 mA
BFP 450
BFQ17
+
18A
up to 500 MHz trans.
thiese devices were designed for A class TV IMD Ic 60 mA and 80 mA
complementary of the famous BFR96
BFQ 32
pnp up to 900 MHz trans.
500 MHz 3.8 dBNF 14 dBG @ 50 mA
IP3 +27.5 dBm with only 20 mA
up to 2 GHz trans.
800 MHz 18dBG 1.5 dBNF with 20 mA
BFQ 70
800 MHz Ic 50 mA : IP3 +35 dBm
up to 1 GHz trans.
200 MHz 2.5dBNF - 22dBG @ 50 mA
BFQ 73S
IMD -60dBc with 2 400mV tones
Ic 40 - 50 mA
up to 1.3 GHz trans.
900 MHz 2dBNF - 13dBG @ 40 mA
BFQ 540
OIP3 + 34dBm with 40 mA
up to 2 GHz trans.
900 MHz 2dBNF
BFR 540
these devices are widely known uand used for IF , HF and VHF, they have a good dynamic
2N5109
TO39 transistor famous Norton circuit with transformer to OIP3 + 37dBm Ic 80mA
up to 500 MHz obtain a 1 - 150 MHz wide band crossmodulat. -57dBc with 5 mW out
2N5108
similar types 9dBG @ 80 mA and low noise 3dBNF @ 30 MHz
50 MHz 23dBG 2dBNF @ 30 mA
900 MHz 14dBG 2.1dBNF @ 30mA
2N5179
BFW 30
DV 1205 S
DV 1210 S
HXTR 5102
MRF 559
various types
up to 500 MHz trans.
21 dBG @ 200 MHz
power FET
> 1 GHz transistor
up to 1 GHz trans.
medium power
broad band
GaAsFet
MMIC for CATV
HF VHF MMIC
MMIC GaAsFet
OIP3 +34 dBm
CLY 10
CGY 21
GPA…..
GPD…..
MWA…..
ERA 5
respectively with a bias of 0.5A and 1 A (if they are used in transmission they provide
5W, or 10W in A class). They have about 7dB NF in VHF
500 MHz 4 dBNF Ic 25mA
4dBNF 14dBG @ 80 mA
at 500 MHz 1dBCP 0.5W
3dBNF 14dBG @ 30 mA
very good impedance matching with low
OIP3 +25dBm
VHF-UHF NF , 0.2 - 0.3 dBNF - 20 dBG
*******************@400mAP1dB +33dBm OIP3 +47dBm
20-1100 MHz < 4dBNF 20dBG @ 160mA OIP3 +32.5dBm @ 160 mA
see more detailed specifications in “ MMIC GPA GPD UTO MWA series “
dc 1 GHz <4.5 dBNF 20 dBG @ 65 mA OIP3 + 33dBm @ 65 mA
it is the wide band component with the lowest noise and good dynamic that we have,
MGA 62563
MMIC GaAsFet
see MMIC wide band amplifiers section for a more detailed explanation
Power
MRF136, with 28 Vcc and 0.5 A of current (14 W of bias), is exactly in the condition to
MRF 136
give20WRFpower,************************************************
Fet TMOS
noise amplifier has an extremely high dynamic range.
very high dynamic
MRF 171
MAALSS0034
MMIC with a NF of 1.6-1.8 dB in VHF-UHF the P1dB is +22dBm
I.C. IF amplif. Plessey
IF high dynamic as amplifier and also as AGC on AM - SSB receivers
SL 611C
See various articles on VHF Communications 2 -96 , 2-92 , 4-74 , 2-93
and on RR 5-91 , 11-98 , 7/8-03
***************************************************************++39.02.99487515fax++39.02.99489276