2024年4月14日发(作者：员天成)
【
南京南山半导体有限公司 — 长电贴片三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L
=
=
TRANSISTOR (NPN)
=
=
=
=
SOT-89-3L Plastic-Encapsulate Transistors
1. BASE
2. COLLECTOR
3. EMITTER
2SD1898
FEATURES
z High Breakdown Voltage and Current
z Excellent DC Current Gain Linearity
z Complement the 2SB1260
z Low Collector-Emitter Saturation Voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
100
80
5
1
500
250
150
-55~+150
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test conditions Min Typ Max Unit
I
C
=50µA,I
E
0 100 V
I
C
=1mA,I
B
0 80 V
V
(BR)EBO
I
E
=50µA,I
C
0 5 V
V
CB
=80V,I
E
0 1 µA
V
CE
=3V, I
C
500mA 82 390
V
CE
=10V,I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
EB
=4V,I
C
0 1 µA
I
C
=500mA,I
B
=20mA
0.4 V
100
20
MHz
pF
CLASSIFICATION OF
h
FE
RANK P Q R
RANGE
82–180 120–270 180–390
MARKING DF
B,Mar,2012
Typical Characteristics
2SD1898
Static Characteristic
800
COMMON
EMITTER
)
T
A
4mA
3.5mA
3mA
a
=25
℃
m
2.5mA
(
600
4.5mA
5mA
C
I
2mA
T
N
E
R
1.5mA
R
400
U
C
R
O
T
1.0mA
C
E
L
200
L
O
C
I
B
=0.5mA
0
0123456
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
BEsat
——
I
1000
C
β=25
N
O
800
T
I
)
a
=25
℃
T
V
A
R
m
(
U
T
t
A
a
s
E
600
S
B
R
V
E
T
E
T
I
G
M
A
E
T
400
-
L
T
E
O
a
=100
℃
S
V
A
B
200
0
0.
COLLECTOR CURRENT I
C
(mA)
f
300
T
——
I
200
C
)
z
H
M
(
250
T
f
Y
C
N
200
E
U
Q
E
R
F
150
N
O
I
T
I
S
N
A
R
100
T
V
CE
=10V
T
o
a
=25 C
50
COLLECTOR CURRENT I
C
(mA)
P
600
c
—— T
a
N
O
I
T
A
500
P
I
S
S
I
D
)
R
W
400
(
E
W
c
O
P
P
R
300
O
T
C
E
L
L
200
O
C
100
0
5150
AMBIENT TEMPERATURE T
a
(
℃
)
h
500
FE
——
I
C
V
CE
= 3V
T
o
a
=100 C
E
400
F
h
N
I
A
G
300
T
N
E
R
R
U
C
200
T
a
=25
o
C
C
D
100
0
1101001000
COLLECTOR CURRENT I
C
(mA)
V
CEsat
—— I
C
400
N
O
β=25
I
T
A
R
)
U
V
T
m
A
(
300
S
t
a
R
s
E
E
C
T
V
T
I
M
E
E
G
-
200
R
A
O
T
L
T
C
O
E
V
L
L
O
C
100
T
a
=100
℃
T
a
=25
℃
0
0.
COLLECTOR CURRENT I
C
(mA)
C
ob
/ C
ib
——
V / V
1000
CBEB
f=1MHz
I
E
=0 / I
C
=0
T
o
)
a
=25 C
F
p
(
C
100
E
C
C
N
ib
A
T
I
C
A
P
A
C
10
C
ob
1
0.1110
REVERSE VOLTAGE V (V)
B,Mar,2012
2024年4月14日发(作者：员天成)
【
南京南山半导体有限公司 — 长电贴片三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L
=
=
TRANSISTOR (NPN)
=
=
=
=
SOT-89-3L Plastic-Encapsulate Transistors
1. BASE
2. COLLECTOR
3. EMITTER
2SD1898
FEATURES
z High Breakdown Voltage and Current
z Excellent DC Current Gain Linearity
z Complement the 2SB1260
z Low Collector-Emitter Saturation Voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
100
80
5
1
500
250
150
-55~+150
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test conditions Min Typ Max Unit
I
C
=50µA,I
E
0 100 V
I
C
=1mA,I
B
0 80 V
V
(BR)EBO
I
E
=50µA,I
C
0 5 V
V
CB
=80V,I
E
0 1 µA
V
CE
=3V, I
C
500mA 82 390
V
CE
=10V,I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
EB
=4V,I
C
0 1 µA
I
C
=500mA,I
B
=20mA
0.4 V
100
20
MHz
pF
CLASSIFICATION OF
h
FE
RANK P Q R
RANGE
82–180 120–270 180–390
MARKING DF
B,Mar,2012
Typical Characteristics
2SD1898
Static Characteristic
800
COMMON
EMITTER
)
T
A
4mA
3.5mA
3mA
a
=25
℃
m
2.5mA
(
600
4.5mA
5mA
C
I
2mA
T
N
E
R
1.5mA
R
400
U
C
R
O
T
1.0mA
C
E
L
200
L
O
C
I
B
=0.5mA
0
0123456
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
BEsat
——
I
1000
C
β=25
N
O
800
T
I
)
a
=25
℃
T
V
A
R
m
(
U
T
t
A
a
s
E
600
S
B
R
V
E
T
E
T
I
G
M
A
E
T
400
-
L
T
E
O
a
=100
℃
S
V
A
B
200
0
0.
COLLECTOR CURRENT I
C
(mA)
f
300
T
——
I
200
C
)
z
H
M
(
250
T
f
Y
C
N
200
E
U
Q
E
R
F
150
N
O
I
T
I
S
N
A
R
100
T
V
CE
=10V
T
o
a
=25 C
50
COLLECTOR CURRENT I
C
(mA)
P
600
c
—— T
a
N
O
I
T
A
500
P
I
S
S
I
D
)
R
W
400
(
E
W
c
O
P
P
R
300
O
T
C
E
L
L
200
O
C
100
0
5150
AMBIENT TEMPERATURE T
a
(
℃
)
h
500
FE
——
I
C
V
CE
= 3V
T
o
a
=100 C
E
400
F
h
N
I
A
G
300
T
N
E
R
R
U
C
200
T
a
=25
o
C
C
D
100
0
1101001000
COLLECTOR CURRENT I
C
(mA)
V
CEsat
—— I
C
400
N
O
β=25
I
T
A
R
)
U
V
T
m
A
(
300
S
t
a
R
s
E
E
C
T
V
T
I
M
E
E
G
-
200
R
A
O
T
L
T
C
O
E
V
L
L
O
C
100
T
a
=100
℃
T
a
=25
℃
0
0.
COLLECTOR CURRENT I
C
(mA)
C
ob
/ C
ib
——
V / V
1000
CBEB
f=1MHz
I
E
=0 / I
C
=0
T
o
)
a
=25 C
F
p
(
C
100
E
C
C
N
ib
A
T
I
C
A
P
A
C
10
C
ob
1
0.1110
REVERSE VOLTAGE V (V)
B,Mar,2012