2024年5月12日发(作者：宿映寒)
【
南京南山半导体有限公司 — 长电贴片三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
=
=
=
=
=
=
BCX19
TRANSISTOR (NPN)
FEATURES
Low voltage
z
MARKING : U1
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS(Ta=25
℃ unless otherwise noted)
Symbol Parameter Value
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
50
45
5
500
225
-55-150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
DC current gain
h
FE2
h
FE3
Collector-emitter saturation voltage
Base-emitter voltage
Test conditions Min Typ Max Unit
V
V
V
100
0.1
10
600
I
C
=100
μ
A, I
E
=0 50
I
C
=10mA, I
B
0 45
I
E
=100
μ
A, I
C
=0
5
V
CB
=20V ,I
E
0
V
EB
=5V ,I
C
0
V
CE
=1V, I
C
100mA
μ
A
μ
A
V
CE
=1V, I
C
300mA 70
V
CE
=1V, I
C
500mA 40
V
CE
(sat)
Ic=500mA, I
B
=50mA
V
BE
(on)
Ic=500mA, V
CE
=1V
0.62 V
1.2 V
A,Jun,2011
Typical Characteristics
BCX19
I
C
——
150
V
CE
COMMON
500uA
EMITTER
125
T
)
450uA
a
=25
℃
A
m
(
400uA
C
I
100
T
350uA
N
E
R
300uA
R
75
U
C
250uA
R
O
T
C
50
200uA
E
L
150uA
L
O
C
25
100uA
I
B
= 50uA
0
0123456
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
I
500
CEsat
——
C
N
O
I
T
A
R
)
U
V
T
m
A
(
S
t
R
a
s
E
E
C
T
V
100
T
I
M
E
T
a
=100
℃
E
-
G
R
A
O
T
T
L
C
O
E
V
T
a
=25
℃
L
L
O
C
β=10
10
110100
500
COLLECTOR CURRENT I
C
(mA)
I
C
——
V
BE
500
)
A
100
m
(
C
I
T
N
℃
E
10
0
℃
05
R
12
R
==
U
aa
TT
C
R
O
T
C
E
1
L
L
O
C
COMMON EMITTER
V
CE
=1V
0.1
00
BASE-EMMITER VOLTAGE V
BE
(mV)
100
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
)
C
F
ib
p
(
T
C
E
C
10
N
A
T
I
C
C
A
ob
P
A
C
1
0.1110
20
REVERSE VOLTAGE V (V)
1000
h
FE
——
I
C
COMMON EMITTER
V
CE
=1V
T
a
=100
℃
E
F
h
N
T
a
=25
℃
I
A
G
T
N
100
E
R
R
U
C
C
D
10
10100
500
COLLECTOR CURRENT I
C
(mA)
V
BEsat
——
I
C
2000
N
O
I
)
T
V
A
R
m
1000
(
U
T
℃
a
=25
T
t
A
a
s
E
S
B
R
V
E
T
E
T
a
=100
℃
T
I
G
M
A
E
T
-
L
E
O
S
V
A
B
β=10
100
110100
500
COLLECTOR CURRENT I
C
(mA)
f
T
——
I
C
500
)
z
H
M
(
T
f
Y
C
100
N
E
U
Q
E
R
F
N
O
I
T
I
S
N
A
R
COMMON EMITTER
T
V
CE
=1V
T
a
=25
℃
10
110100
COLLECTOR CURRENT I
C
(mA)
250
P
C
—— T
a
N
O
200
I
T
A
P
I
S
S
I
150
D
)
R
W
E
W
m
(
O
P
C
100
R
P
O
T
C
E
L
L
O
50
C
0
5150
AMBIENT TEMPERATURE T
a
(
℃
)
A,Jun,2011
2024年5月12日发(作者：宿映寒)
【
南京南山半导体有限公司 — 长电贴片三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
=
=
=
=
=
=
BCX19
TRANSISTOR (NPN)
FEATURES
Low voltage
z
MARKING : U1
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS(Ta=25
℃ unless otherwise noted)
Symbol Parameter Value
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
50
45
5
500
225
-55-150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
DC current gain
h
FE2
h
FE3
Collector-emitter saturation voltage
Base-emitter voltage
Test conditions Min Typ Max Unit
V
V
V
100
0.1
10
600
I
C
=100
μ
A, I
E
=0 50
I
C
=10mA, I
B
0 45
I
E
=100
μ
A, I
C
=0
5
V
CB
=20V ,I
E
0
V
EB
=5V ,I
C
0
V
CE
=1V, I
C
100mA
μ
A
μ
A
V
CE
=1V, I
C
300mA 70
V
CE
=1V, I
C
500mA 40
V
CE
(sat)
Ic=500mA, I
B
=50mA
V
BE
(on)
Ic=500mA, V
CE
=1V
0.62 V
1.2 V
A,Jun,2011
Typical Characteristics
BCX19
I
C
——
150
V
CE
COMMON
500uA
EMITTER
125
T
)
450uA
a
=25
℃
A
m
(
400uA
C
I
100
T
350uA
N
E
R
300uA
R
75
U
C
250uA
R
O
T
C
50
200uA
E
L
150uA
L
O
C
25
100uA
I
B
= 50uA
0
0123456
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
I
500
CEsat
——
C
N
O
I
T
A
R
)
U
V
T
m
A
(
S
t
R
a
s
E
E
C
T
V
100
T
I
M
E
T
a
=100
℃
E
-
G
R
A
O
T
T
L
C
O
E
V
T
a
=25
℃
L
L
O
C
β=10
10
110100
500
COLLECTOR CURRENT I
C
(mA)
I
C
——
V
BE
500
)
A
100
m
(
C
I
T
N
℃
E
10
0
℃
05
R
12
R
==
U
aa
TT
C
R
O
T
C
E
1
L
L
O
C
COMMON EMITTER
V
CE
=1V
0.1
00
BASE-EMMITER VOLTAGE V
BE
(mV)
100
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
)
C
F
ib
p
(
T
C
E
C
10
N
A
T
I
C
C
A
ob
P
A
C
1
0.1110
20
REVERSE VOLTAGE V (V)
1000
h
FE
——
I
C
COMMON EMITTER
V
CE
=1V
T
a
=100
℃
E
F
h
N
T
a
=25
℃
I
A
G
T
N
100
E
R
R
U
C
C
D
10
10100
500
COLLECTOR CURRENT I
C
(mA)
V
BEsat
——
I
C
2000
N
O
I
)
T
V
A
R
m
1000
(
U
T
℃
a
=25
T
t
A
a
s
E
S
B
R
V
E
T
E
T
a
=100
℃
T
I
G
M
A
E
T
-
L
E
O
S
V
A
B
β=10
100
110100
500
COLLECTOR CURRENT I
C
(mA)
f
T
——
I
C
500
)
z
H
M
(
T
f
Y
C
100
N
E
U
Q
E
R
F
N
O
I
T
I
S
N
A
R
COMMON EMITTER
T
V
CE
=1V
T
a
=25
℃
10
110100
COLLECTOR CURRENT I
C
(mA)
250
P
C
—— T
a
N
O
200
I
T
A
P
I
S
S
I
150
D
)
R
W
E
W
m
(
O
P
C
100
R
P
O
T
C
E
L
L
O
50
C
0
5150
AMBIENT TEMPERATURE T
a
(
℃
)
A,Jun,2011