2024年5月18日发(作者：漆雕睿哲)

QSH29

Transistors

Dual digital transistors

QSH29

zFeatures

In addition to the standard features of digital transistor,

this transisitor has:

1) Low collector saturation voltage, typically

V

CE (sat)

=100mV for I

C

/ I

B

=100mA / 1mA(Typ.)

2) High current gain, minimum

h

FE

=500mA for V

CE

=5V, I

C

=200mA.

3) Built in Zener diode for protection against surges when

connected to inductive load.

zStructure

NPN silicon epitaxial planar transistor

zApplications

Driver

zPackaging specifications and h

FE

Package

Type

Packaging type

Code

Basic ordering unit (pieces)

QSH29

TSMT6

Taping

TR

3000

DTr1

Di

DTr2

Di

R

(1) : Emitter (DTr1)

(2) : Base (DTr1)

(3) : Collector (DTr2)

(4) : Emitter (DTr2)

(5) : Base (DTr2)

(6) : Collector (DTr1)

zDimensions (Unit : mm)

TSMT6

Abbreviated symbol : H29

zEquivalent circuit

(6)(5)

R

(4)

R=10kΩ

zAbsolute maximum ratings (Ta=25°C)

(1)(2)(3)

<<

DTr1

>> <<

DTr2

>>

ParameterSymbol

V

CBO

Collector-base voltage

V

CEO

Collector-emitter voltage

V

EBO

Emitter-base voltage

Continuous

I

C

Collector current

Pulsed

I

CP

Power dissipation

Junction temperature

Range of storage temperature

P

D

Tj

Tstg

Unit

Limits

V

60±10

V

60±10

5V

500mA

∗1

1A

1.25W/TOTAL

∗2

0.9W/1 ELEMENT

∗2

150

°C

−55 to +150°C

∗1 Pw=10ms 1 Pulse

∗2 Each terminal mounted on a ceramic board

1/3

/

QSH29

Transistor

zElectrical characteristics (Ta=25°C)

<<

DTr1

>> <<

DTr2

>>

nditions

Collector-emitter breakdown voltage

BV

CEO

50

−

70V

I

C

=50µA

BV

CBO

Collector-base breakdown voltage

50

−

70V

I

C

=50µA

BV

EBO

5.0

Emitter-base breakdown voltage

−

−V

I

E

=720µA

I

CBO

Collector cut-off current

−−

0.5µA

V

CB

=40V

I

EBO

Emitter cut-off current

300−

580µA

V

EB

=4V

100

300mV

I

C

=100mA, I

B

=1mA

Collector-emitter saturation voltage

V

CE (sat)

−

h

FE

V

CE

=5V, I

C

=200mA

DC current gain500

−

−−

−

R

Emitter-base resistance7

10

13kΩ

2/3

/

2024年5月18日发(作者：漆雕睿哲)

QSH29

Transistors

Dual digital transistors

QSH29

zFeatures

In addition to the standard features of digital transistor,

this transisitor has:

1) Low collector saturation voltage, typically

V

CE (sat)

=100mV for I

C

/ I

B

=100mA / 1mA(Typ.)

2) High current gain, minimum

h

FE

=500mA for V

CE

=5V, I

C

=200mA.

3) Built in Zener diode for protection against surges when

connected to inductive load.

zStructure

NPN silicon epitaxial planar transistor

zApplications

Driver

zPackaging specifications and h

FE

Package

Type

Packaging type

Code

Basic ordering unit (pieces)

QSH29

TSMT6

Taping

TR

3000

DTr1

Di

DTr2

Di

R

(1) : Emitter (DTr1)

(2) : Base (DTr1)

(3) : Collector (DTr2)

(4) : Emitter (DTr2)

(5) : Base (DTr2)

(6) : Collector (DTr1)

zDimensions (Unit : mm)

TSMT6

Abbreviated symbol : H29

zEquivalent circuit

(6)(5)

R

(4)

R=10kΩ

zAbsolute maximum ratings (Ta=25°C)

(1)(2)(3)

<<

DTr1

>> <<

DTr2

>>

ParameterSymbol

V

CBO

Collector-base voltage

V

CEO

Collector-emitter voltage

V

EBO

Emitter-base voltage

Continuous

I

C

Collector current

Pulsed

I

CP

Power dissipation

Junction temperature

Range of storage temperature

P

D

Tj

Tstg

Unit

Limits

V

60±10

V

60±10

5V

500mA

∗1

1A

1.25W/TOTAL

∗2

0.9W/1 ELEMENT

∗2

150

°C

−55 to +150°C

∗1 Pw=10ms 1 Pulse

∗2 Each terminal mounted on a ceramic board

1/3

/

QSH29

Transistor

zElectrical characteristics (Ta=25°C)

<<

DTr1

>> <<

DTr2

>>

nditions

Collector-emitter breakdown voltage

BV

CEO

50

−

70V

I

C

=50µA

BV

CBO

Collector-base breakdown voltage

50

−

70V

I

C

=50µA

BV

EBO

5.0

Emitter-base breakdown voltage

−

−V

I

E

=720µA

I

CBO

Collector cut-off current

−−

0.5µA

V

CB

=40V

I

EBO

Emitter cut-off current

300−

580µA

V

EB

=4V

100

300mV

I

C

=100mA, I

B

=1mA

Collector-emitter saturation voltage

V

CE (sat)

−

h

FE

V

CE

=5V, I

C

=200mA

DC current gain500

−

−−

−

R

Emitter-base resistance7

10

13kΩ

2/3

/