2024年5月20日发(作者：牢婉娜)
2SC5858
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5858
Unit: mm
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
z High Voltage
z Low Saturation Voltage
z High Speed
: V
CBO
= 1700 V
: V
CE
(sat)
= 1.5 V (Max)
: t
f(2)
= 0.1 μs (Typ.)
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
DC I
C
Pulse
I
CP
I
B
P
C
T
j
T
stg
1700 V
750 V
5 V
22
44
A
11 A
200 W
JEDEC
150 °C
JEITA
−55~150 °C
―
―
TOSHIBA 2-21F2A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-22
2SC5858
ELECTRICAL CHARACTERISTICS
(Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAXUNIT
Collector Cut−off Current
Emitter Cut−off Current
Collector − Emitter Breakdown Voltage
I
CBO
I
EBO
V
(BR)
CEO
h
FE
(1)
DC Current Gain
h
FE
(2)
h
FE
(3)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
stg(1)
t
f(1)
t
stg(2)
t
f(2)
V
CB
= 1700 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 5 V, I
C
= 2 A
V
CE
= 5 V, I
C
= 8 A
V
CE
= 5 V, I
C
= 17 A
I
C
= 17 A, I
B
= 4.25 A
I
C
= 17 A, I
B
= 4.25 A
V
CE
= 10 V, I
C
= 0.1 A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
I
CP
= 9 A , I
B1
(end) = 1.4 A
f
H
= 32 kHz
I
CP
= 8 A, I
B1
(end) = 1.2 A
f
H
= 45 kHz
―
―
750
30
11
5
―
― 1 mA
― 100
―
μA
― V
― 60
― 19
―
― 7.5
― 1.5 V
― 1.0 1.5 V
― 2 ― MHz
― 280 ― pF
― 4.5 ―
― 0.1 ―
μs
― 3.5 ―
― 0.1 ―
μs
2
2006-11-22
2024年5月20日发(作者：牢婉娜)
2SC5858
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5858
Unit: mm
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
z High Voltage
z Low Saturation Voltage
z High Speed
: V
CBO
= 1700 V
: V
CE
(sat)
= 1.5 V (Max)
: t
f(2)
= 0.1 μs (Typ.)
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
DC I
C
Pulse
I
CP
I
B
P
C
T
j
T
stg
1700 V
750 V
5 V
22
44
A
11 A
200 W
JEDEC
150 °C
JEITA
−55~150 °C
―
―
TOSHIBA 2-21F2A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-22
2SC5858
ELECTRICAL CHARACTERISTICS
(Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAXUNIT
Collector Cut−off Current
Emitter Cut−off Current
Collector − Emitter Breakdown Voltage
I
CBO
I
EBO
V
(BR)
CEO
h
FE
(1)
DC Current Gain
h
FE
(2)
h
FE
(3)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
stg(1)
t
f(1)
t
stg(2)
t
f(2)
V
CB
= 1700 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 5 V, I
C
= 2 A
V
CE
= 5 V, I
C
= 8 A
V
CE
= 5 V, I
C
= 17 A
I
C
= 17 A, I
B
= 4.25 A
I
C
= 17 A, I
B
= 4.25 A
V
CE
= 10 V, I
C
= 0.1 A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
I
CP
= 9 A , I
B1
(end) = 1.4 A
f
H
= 32 kHz
I
CP
= 8 A, I
B1
(end) = 1.2 A
f
H
= 45 kHz
―
―
750
30
11
5
―
― 1 mA
― 100
―
μA
― V
― 60
― 19
―
― 7.5
― 1.5 V
― 1.0 1.5 V
― 2 ― MHz
― 280 ― pF
― 4.5 ―
― 0.1 ―
μs
― 3.5 ―
― 0.1 ―
μs
2
2006-11-22