2024年5月26日发(作者：奉家欣)

元器件交易网

3MBI150UC-120

IGBT Module U-Series

Features

· High speed switching

· Voltage drive

· Low inductance module structure

· With shunt resistors

1200V / 150A 3 in one-package

Applications

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Item

Collector-Emitter voltage

Gate-Emitter voltaga

Collector current

Symbol

V

CES

V

GES

I

C

I

C

p

-I

C

-I

C

pulse

P

C

T

j

T

stg

V

iso

ConditionsRating

1200

±20

200

150

400

300

150

300

735

+150

-40 to +125

2500

3.5

Unit

V

V

A

Continuous

Tc=25°C

Tc=80°C

1ms

Tc=25°C

Tc=80°C

Collector Power Dissipation

Junction temperature

Storage temperature

Isolation voltage

between terminal and copper base *1

Screw Torque Mounting *

2

1 device

W

°C

VAC

N·m

AC:1min.

*

1 :

All terminals should be connected together when isolation test will be done.

*

2 :

Recommendable value : 2.5 to 3.5 N·m(M5)

Electrical characteristics (at Tj=25°C unless otherwise specified)

Item

Symbols

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

I

CES

I

GES

V

GE(th)

V

CE(sat)

(chip)

C

ies

t

on

t

r

t

r(i)

t

off

t

f

V

F

(chip)

t

rr

R lead

R shunt

Conditions

V

GE

=0V, V

CE

=1200V

V

CE

=0V, V

GE

=±20V

V

CE

=20V, I

C

=150mA

V

GE

=15V, I

C

=150A

Tj=25°C

Tj=125°C

V

CE

=10V, V

GE

=0V, f=1MHz

V

CC

=600V

I

C

=150A

V

GE

=±15V

R

G

=2.2 Ω

Tj=25°C

V

GE

=0V

Tj=125°C

I

F

=150A

I

F

=150A

Without shunt resistance

Resistance of R1 to R6 *4

Characteristics Unit

. Max.

mA

––1.0

nA

––200

V

4.56.58.5

V

–1.752.10

–

–

–

–

–

–

–

–

–

–

–

–

2.00

17

0.36

0.21

0.03

0.37

0.07

1.60

1.70

–

5.1

2.4

–

–

1.20

0.60

–

1.00

0.30

1.90

–

0.35

–

–

nF

µs

Turn-off time

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip*3

Shunt resistance

V

µs

mΩ

*3: Biggest internal terminal resistance among arm.

*4 R1 to R2 is shown in equivalent circuit (p5)

Thermal resistance characteristics

Items Symbols

Thermal resistance

Contact Thermal resistance

Rth(j-c)

Rth(j-c)

Rth(c-f)*

5

Conditions

IGBT

FWD

With thermal compound

Characteristics Unit

. Max.

––0.17

°C/W

––0.28

°C/W

–0.05 –

°C/W

*

5

:

This is the value which is defined mounting on the additional cooling fin with thermal compound.

元器件交易网

3MBI150UC-120

Characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

400

VGE=20V15V12V

300

]

A

[

c

I

:

t

n

e

r

r

u

200

c

r

10V

o

t

c

e

l

l

o

C

100

8V

0

012345

Collector-Emitter voltage : VCE [V]

Collector current vs. Collector-Emitter voltage (typ.)

VGE=15V / chip

400

300

Tj=25°C

]

A

[

c

I

:

Tj=125°C

t

n

e

r

r

u

200

c

r

o

t

c

e

l

l

o

C

100

0

01234

Collector-Emitter voltage : VCE [V]

Capacitance vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25°C

100.0

]

F

Cies

n

[

s

e

r

10.0

C

,

s

e

o

C

,

s

e

Cres

i

C

:

e

1.0

c

n

a

t

Coes

i

c

a

p

a

C

0.1

0102030

Collector-Emitter voltage : VCE [V]

IGBT Module

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 125°C / chip

400

VGE=20V15V12V

300

]

A

[

c

I

:

t

n

e

r

r

u

200

c

r

o

10V

t

c

e

l

l

o

C

100

8V

0

012345

Collector-Emitter voltage : VCE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Tj=25°C / chip

10

8

6

4

2

Ic=300A

Ic=150A

Ic= 75A

0

510152025

Gate - Emitter voltage : VGE [ V ]

Dynamic Gate charge (typ.)

Vcc=600V, Ic=150A, Tj= 25°C

]

]

v

v

d

i

d

i

V

/

V

/

0

5

0

2

[

[

E

C

E

V

G

:

V

e

g

VGE

a

:

e

o

l

t

g

v

a

r

e

o

l

t

t

v

r

m

i

t

e

t

E

-

r

m

i

t

o

E

c

t

-

e

e

o

l

l

a

t

C

G

VCE

0

0

Gate charge : Qg [ nC ]

C

o

l

l

e

c

t

o

r

-

E

m

i

t

t

e

r

v

o

l

t

a

g

e

:

V

C

E

[

V

]

2024年5月26日发(作者：奉家欣)

元器件交易网

3MBI150UC-120

IGBT Module U-Series

Features

· High speed switching

· Voltage drive

· Low inductance module structure

· With shunt resistors

1200V / 150A 3 in one-package

Applications

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Item

Collector-Emitter voltage

Gate-Emitter voltaga

Collector current

Symbol

V

CES

V

GES

I

C

I

C

p

-I

C

-I

C

pulse

P

C

T

j

T

stg

V

iso

ConditionsRating

1200

±20

200

150

400

300

150

300

735

+150

-40 to +125

2500

3.5

Unit

V

V

A

Continuous

Tc=25°C

Tc=80°C

1ms

Tc=25°C

Tc=80°C

Collector Power Dissipation

Junction temperature

Storage temperature

Isolation voltage

between terminal and copper base *1

Screw Torque Mounting *

2

1 device

W

°C

VAC

N·m

AC:1min.

*

1 :

All terminals should be connected together when isolation test will be done.

*

2 :

Recommendable value : 2.5 to 3.5 N·m(M5)

Electrical characteristics (at Tj=25°C unless otherwise specified)

Item

Symbols

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

I

CES

I

GES

V

GE(th)

V

CE(sat)

(chip)

C

ies

t

on

t

r

t

r(i)

t

off

t

f

V

F

(chip)

t

rr

R lead

R shunt

Conditions

V

GE

=0V, V

CE

=1200V

V

CE

=0V, V

GE

=±20V

V

CE

=20V, I

C

=150mA

V

GE

=15V, I

C

=150A

Tj=25°C

Tj=125°C

V

CE

=10V, V

GE

=0V, f=1MHz

V

CC

=600V

I

C

=150A

V

GE

=±15V

R

G

=2.2 Ω

Tj=25°C

V

GE

=0V

Tj=125°C

I

F

=150A

I

F

=150A

Without shunt resistance

Resistance of R1 to R6 *4

Characteristics Unit

. Max.

mA

––1.0

nA

––200

V

4.56.58.5

V

–1.752.10

–

–

–

–

–

–

–

–

–

–

–

–

2.00

17

0.36

0.21

0.03

0.37

0.07

1.60

1.70

–

5.1

2.4

–

–

1.20

0.60

–

1.00

0.30

1.90

–

0.35

–

–

nF

µs

Turn-off time

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip*3

Shunt resistance

V

µs

mΩ

*3: Biggest internal terminal resistance among arm.

*4 R1 to R2 is shown in equivalent circuit (p5)

Thermal resistance characteristics

Items Symbols

Thermal resistance

Contact Thermal resistance

Rth(j-c)

Rth(j-c)

Rth(c-f)*

5

Conditions

IGBT

FWD

With thermal compound

Characteristics Unit

. Max.

––0.17

°C/W

––0.28

°C/W

–0.05 –

°C/W

*

5

:

This is the value which is defined mounting on the additional cooling fin with thermal compound.

元器件交易网

3MBI150UC-120

Characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

400

VGE=20V15V12V

300

]

A

[

c

I

:

t

n

e

r

r

u

200

c

r

10V

o

t

c

e

l

l

o

C

100

8V

0

012345

Collector-Emitter voltage : VCE [V]

Collector current vs. Collector-Emitter voltage (typ.)

VGE=15V / chip

400

300

Tj=25°C

]

A

[

c

I

:

Tj=125°C

t

n

e

r

r

u

200

c

r

o

t

c

e

l

l

o

C

100

0

01234

Collector-Emitter voltage : VCE [V]

Capacitance vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25°C

100.0

]

F

Cies

n

[

s

e

r

10.0

C

,

s

e

o

C

,

s

e

Cres

i

C

:

e

1.0

c

n

a

t

Coes

i

c

a

p

a

C

0.1

0102030

Collector-Emitter voltage : VCE [V]

IGBT Module

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 125°C / chip

400

VGE=20V15V12V

300

]

A

[

c

I

:

t

n

e

r

r

u

200

c

r

o

10V

t

c

e

l

l

o

C

100

8V

0

012345

Collector-Emitter voltage : VCE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Tj=25°C / chip

10

8

6

4

2

Ic=300A

Ic=150A

Ic= 75A

0

510152025

Gate - Emitter voltage : VGE [ V ]

Dynamic Gate charge (typ.)

Vcc=600V, Ic=150A, Tj= 25°C

]

]

v

v

d

i

d

i

V

/

V

/

0

5

0

2

[

[

E

C

E

V

G

:

V

e

g

VGE

a

:

e

o

l

t

g

v

a

r

e

o

l

t

t

v

r

m

i

t

e

t

E

-

r

m

i

t

o

E

c

t

-

e

e

o

l

l

a

t

C

G

VCE

0

0

Gate charge : Qg [ nC ]

C

o

l

l

e

c

t

o

r

-

E

m

i

t

t

e

r

v

o

l

t

a

g

e

:

V

C

E

[

V

]