2024年6月2日发(作者：司寇奇文)
元器件交易网
830 series
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series
Device Description
Arangeofsiliconvaractordiodesforuseinfrequencycontroland
ingcloselycontrolledCVcharacteristicsandhigh
ersecurrentensuresverylowphasenoise
bleinsingleordualcommoncathodeformat
in a wide rage of miniature surface mount packages.
Features
·
Close tolerance C-V characteristics
·High tuning ratio
·Low I
R
(typically 200pA)
·Excellent phase noise performance
·High Q
·Range of miniature surface mount packages
Applications
·
VCXOandTCXO
·
Wireless communications
·
Pagers
·
Mobile radio
*Where steeper CV slopes are required there is the 12Vhyperabruptrange.
ZC930, ZMV930, ZV930, ZV931 Series
ISSUE 6 - JANUARY 2002
1
元器件交易网
830 series
TUNING CHARACTERISTICS atTamb= 25°C
PART
Capacitance(pF)
V
R
=2V,f=1MHz
MIN.
829A
829B
830A
830B
831A
831B
832A
832B
833A
833B
834A
834B
835A
835B
836A
836B
7.38
7.79
9.0
9.5
13.5
14.25
19.8
20.9
29.7
31.35
42.3
44.65
61.2
64.6
90.0
95.0
NOM.
8.2
8.2
10.0
10.0
15.0
15.0
22.0
22.0
33.0
33.0
47.0
47.0
68.0
68.0
100.0
100.0
MAX.
9.02
8.61
11.0
10.5
16.5
15.75
24.2
23.1
36.3
34.65
51.7
49.35
74.8
71.4
110.0
105.0
250
250
300
300
300
300
200
200
200
200
200
200
100
100
100
100
MinQ
V
R
=3V
f=50MHz
MIN.
4.3
4.3
4.5
4.5
4.5
4.5
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
CapacitanceRatio
C
2
/C
20
atf=1MHz
MAX.
5.8
5.8
6.0
6.0
6.0
6.0
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Forwardcurrent
PowerdissipationatT
amb
=25ЊCSOT23
PowerdissipationatT
amb
=25ЊCSOD323
PowerdissipationatT
amb
=25ЊCSOD523
Operatingandstoragetemperaturerange
SYMBOL
I
F
P
tot
P
tot
P
tot
MAX
200
330
330
250
-55to+150
UNIT
mA
mW
mW
mW
ЊC
ELECTRICAL CHARACTERISTICS atTamb= 25°C
PARAMETER
Reversebreakdownvoltage
Reversevoltageleakage
Temperaturecoefficientofcapacitance
CONDITIONS
I
R
=10uA
V
R
=20V
V
R
=3V,f=1MHz
MIN.
25
0.2
300
20
400
V
nA
ppCm/ЊC
ISSUE 6 - JANUARY 2002
2
2024年6月2日发(作者：司寇奇文)
元器件交易网
830 series
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series
Device Description
Arangeofsiliconvaractordiodesforuseinfrequencycontroland
ingcloselycontrolledCVcharacteristicsandhigh
ersecurrentensuresverylowphasenoise
bleinsingleordualcommoncathodeformat
in a wide rage of miniature surface mount packages.
Features
·
Close tolerance C-V characteristics
·High tuning ratio
·Low I
R
(typically 200pA)
·Excellent phase noise performance
·High Q
·Range of miniature surface mount packages
Applications
·
VCXOandTCXO
·
Wireless communications
·
Pagers
·
Mobile radio
*Where steeper CV slopes are required there is the 12Vhyperabruptrange.
ZC930, ZMV930, ZV930, ZV931 Series
ISSUE 6 - JANUARY 2002
1
元器件交易网
830 series
TUNING CHARACTERISTICS atTamb= 25°C
PART
Capacitance(pF)
V
R
=2V,f=1MHz
MIN.
829A
829B
830A
830B
831A
831B
832A
832B
833A
833B
834A
834B
835A
835B
836A
836B
7.38
7.79
9.0
9.5
13.5
14.25
19.8
20.9
29.7
31.35
42.3
44.65
61.2
64.6
90.0
95.0
NOM.
8.2
8.2
10.0
10.0
15.0
15.0
22.0
22.0
33.0
33.0
47.0
47.0
68.0
68.0
100.0
100.0
MAX.
9.02
8.61
11.0
10.5
16.5
15.75
24.2
23.1
36.3
34.65
51.7
49.35
74.8
71.4
110.0
105.0
250
250
300
300
300
300
200
200
200
200
200
200
100
100
100
100
MinQ
V
R
=3V
f=50MHz
MIN.
4.3
4.3
4.5
4.5
4.5
4.5
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
CapacitanceRatio
C
2
/C
20
atf=1MHz
MAX.
5.8
5.8
6.0
6.0
6.0
6.0
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Forwardcurrent
PowerdissipationatT
amb
=25ЊCSOT23
PowerdissipationatT
amb
=25ЊCSOD323
PowerdissipationatT
amb
=25ЊCSOD523
Operatingandstoragetemperaturerange
SYMBOL
I
F
P
tot
P
tot
P
tot
MAX
200
330
330
250
-55to+150
UNIT
mA
mW
mW
mW
ЊC
ELECTRICAL CHARACTERISTICS atTamb= 25°C
PARAMETER
Reversebreakdownvoltage
Reversevoltageleakage
Temperaturecoefficientofcapacitance
CONDITIONS
I
R
=10uA
V
R
=20V
V
R
=3V,f=1MHz
MIN.
25
0.2
300
20
400
V
nA
ppCm/ЊC
ISSUE 6 - JANUARY 2002
2