2024年11月5日发(作者：钟雅)
元器件交易网
BC640 PNP Epitaxial Silicon Transistor
BC640
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
•Complement to BC639
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
T = 25°C unless otherwise noted
a
Symbol
V
CER
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-100
-80
-5
-1
-1.5
-100
1
150
-65 ~ 150
Units
V
V
V
V
A
A
mA
W
°C
°C
Collector-Emitter Voltage at R
BE
=1KΩ -100
Electrical Characteristics
T = 25°C unless otherwise noted
a
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= -10mA, I
B
=0
V
CB
= -30V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -2V, I
C
= -5mA
V
CE
= -2V, I
C
= -150mA
V
CE
= -2V, I
C
= -500mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -5V, I
C
= -10mA,
f=50MHz
Min.
-80
.
-0.1
-0.1
Units
V
µA
µA
25
40
25
160
-0.5
-1
V
V
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product100 MHz
©2005 Fairchild Semiconductor Corporation
1
BC640 Rev. C2
元器件交易网
BC640 PNP Epitaxial Silicon Transistor
Package Marking and Ordering Information
Device Marking
BC640
BC640
BC640
BC640
BC640
Device
BC640BU
BC640TA
BC640TAR
BC640TF
BC640TFR
Package
TO-92
TO-92
TO-92
TO-92
TO-92
Reel Size
--
--
--
--
--
Tape Width
--
--
--
--
--
Quantity
10,000
2,000
2,000
2,000
2,000
BC640 Rev. C2
2
元器件交易网
BC640 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
-500
Figure 2. DC Current Gain
1000
I
B
= - 1.8 mA
I
B
= - 1.6 mA
I
C
[
m
A
]
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
V
CE
= - 2V
-400
I
B
= - 1.2 mA
-300
I
B
= - 1.0 mA
I
B
= - 0.8 mA
h
F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
I
B
= - 1.4 mA
100
-200
I
B
= - 0.6 mA
I
B
= - 0.4 mA
-100
I
B
= - 0.2 mA
-0
-0-10-20-30-40-50
10
-1-10-100-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-1000
V
B
E
(
s
a
t
)
,
V
C
E
(
s
a
t
)
[
V
]
,
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
-10
I
C
= 10 I
B
-1
V
BE
(sat)
I
C
[
m
A
]
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
V
CE
= - 2V
-100
-0.1
-10
V
CE
(sat)
-0.01
-1-10-100-1000
-1
-0.2-0.4-0.6-0.8-1.0-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
100
f=1MHz
C
o
b
[
p
F
]
,
C
A
P
A
C
I
T
A
N
C
E
10
1
-1-10-100
V
CB
[V], COLLECTOR-BASE VOLTAGE
BC640 Rev. C2
3
元器件交易网
BC640 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
TO-92
4.58
–0.15
+0.25
0.46
±0.10
1
4
.
4
7
±
0
.
4
0
4
.
5
8
±
0
.
2
0
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3
.
8
6
M
A
X
1
.
0
2
±
0
.
1
0
0
.
3
8
–
0
.
0
5
+
0
.
1
0
(R2.29)
(
0
.
2
5
)
Dimensions in Millimeters
BC640 Rev. C2
4
元器件交易网
BC640 PNP Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
Across the board. Around the world.™
The Power Franchise
®
Programmable Active Droop™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification NeededFull Production
ObsoleteNot In Production
5
BC640 Rev. C2
2024年11月5日发(作者：钟雅)
元器件交易网
BC640 PNP Epitaxial Silicon Transistor
BC640
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
•Complement to BC639
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
T = 25°C unless otherwise noted
a
Symbol
V
CER
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-100
-80
-5
-1
-1.5
-100
1
150
-65 ~ 150
Units
V
V
V
V
A
A
mA
W
°C
°C
Collector-Emitter Voltage at R
BE
=1KΩ -100
Electrical Characteristics
T = 25°C unless otherwise noted
a
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= -10mA, I
B
=0
V
CB
= -30V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -2V, I
C
= -5mA
V
CE
= -2V, I
C
= -150mA
V
CE
= -2V, I
C
= -500mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -5V, I
C
= -10mA,
f=50MHz
Min.
-80
.
-0.1
-0.1
Units
V
µA
µA
25
40
25
160
-0.5
-1
V
V
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product100 MHz
©2005 Fairchild Semiconductor Corporation
1
BC640 Rev. C2
元器件交易网
BC640 PNP Epitaxial Silicon Transistor
Package Marking and Ordering Information
Device Marking
BC640
BC640
BC640
BC640
BC640
Device
BC640BU
BC640TA
BC640TAR
BC640TF
BC640TFR
Package
TO-92
TO-92
TO-92
TO-92
TO-92
Reel Size
--
--
--
--
--
Tape Width
--
--
--
--
--
Quantity
10,000
2,000
2,000
2,000
2,000
BC640 Rev. C2
2
元器件交易网
BC640 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
-500
Figure 2. DC Current Gain
1000
I
B
= - 1.8 mA
I
B
= - 1.6 mA
I
C
[
m
A
]
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
V
CE
= - 2V
-400
I
B
= - 1.2 mA
-300
I
B
= - 1.0 mA
I
B
= - 0.8 mA
h
F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
I
B
= - 1.4 mA
100
-200
I
B
= - 0.6 mA
I
B
= - 0.4 mA
-100
I
B
= - 0.2 mA
-0
-0-10-20-30-40-50
10
-1-10-100-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-1000
V
B
E
(
s
a
t
)
,
V
C
E
(
s
a
t
)
[
V
]
,
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
-10
I
C
= 10 I
B
-1
V
BE
(sat)
I
C
[
m
A
]
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
V
CE
= - 2V
-100
-0.1
-10
V
CE
(sat)
-0.01
-1-10-100-1000
-1
-0.2-0.4-0.6-0.8-1.0-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
100
f=1MHz
C
o
b
[
p
F
]
,
C
A
P
A
C
I
T
A
N
C
E
10
1
-1-10-100
V
CB
[V], COLLECTOR-BASE VOLTAGE
BC640 Rev. C2
3
元器件交易网
BC640 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
TO-92
4.58
–0.15
+0.25
0.46
±0.10
1
4
.
4
7
±
0
.
4
0
4
.
5
8
±
0
.
2
0
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3
.
8
6
M
A
X
1
.
0
2
±
0
.
1
0
0
.
3
8
–
0
.
0
5
+
0
.
1
0
(R2.29)
(
0
.
2
5
)
Dimensions in Millimeters
BC640 Rev. C2
4
元器件交易网
BC640 PNP Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
Across the board. Around the world.™
The Power Franchise
®
Programmable Active Droop™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification NeededFull Production
ObsoleteNot In Production
5
BC640 Rev. C2