2024年10月24日发(作者：疏楠)
元器件交易网
NTE10
Silicon NPN Transistor
UHF Low Noise Wide–Band Amplifier
Features:
DLow Noise Figure: NF = 2.2dB Typ (f = 0.9GHz)
DHigh Power Gain: MAG = 14dB Typ (f = 0.9GHz)
DHigh Cutoff Frequency: f
T
= 5GHz Typ
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70mA
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Junction Temperature, T
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Maximum Available Power Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
C
re
|S
21e
|
2
MAG
NF
Test Conditions
V
CB
= 12V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 20mA
V
CE
= 10V, I
C
= 20mA
V
CB
= 10V, f = 1MHz
V
CB
= 10V, f = 1MHz
V
CE
= 10V, I
C
= 20mA, f = 0.9GHz
V
CE
= 10V, I
C
= 5mA, f = 0.9GHz
V
CE
= 10V, I
C
= 5mA, f = 0.9GHz
Min
–
–
40
–
–
–
8
–
–
Typ
–
–
–
5.0
0.8
0.5
10
14
2.2
Max
1.0
10
200
–
1.1
–
–
–
4.5
GHz
pF
pF
dB
dB
dB
Unit
µA
µA
元器件交易网
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
B E C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
2024年10月24日发(作者：疏楠)
元器件交易网
NTE10
Silicon NPN Transistor
UHF Low Noise Wide–Band Amplifier
Features:
DLow Noise Figure: NF = 2.2dB Typ (f = 0.9GHz)
DHigh Power Gain: MAG = 14dB Typ (f = 0.9GHz)
DHigh Cutoff Frequency: f
T
= 5GHz Typ
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70mA
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Junction Temperature, T
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Maximum Available Power Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
C
re
|S
21e
|
2
MAG
NF
Test Conditions
V
CB
= 12V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 20mA
V
CE
= 10V, I
C
= 20mA
V
CB
= 10V, f = 1MHz
V
CB
= 10V, f = 1MHz
V
CE
= 10V, I
C
= 20mA, f = 0.9GHz
V
CE
= 10V, I
C
= 5mA, f = 0.9GHz
V
CE
= 10V, I
C
= 5mA, f = 0.9GHz
Min
–
–
40
–
–
–
8
–
–
Typ
–
–
–
5.0
0.8
0.5
10
14
2.2
Max
1.0
10
200
–
1.1
–
–
–
4.5
GHz
pF
pF
dB
dB
dB
Unit
µA
µA
元器件交易网
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
B E C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max