2024年10月29日发(作者：用从蕾)
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NX3V1G66
Low-voltage analog switch
Rev. 02 — 28 July 2008Product data sheet
l description
The NX3V1G66 provides one single-pole single-throw analog switch function. It has two
input/output terminals (Y and Z) and an active HIGH enable input pin (E). When pin E is
LOW, the analog switch is turned off.
Schmitttriggeractionattheenableinput(E)makesthecircuittoleranttoslowerinputrise
and fall times across the entire V
CC
range from 1.4 V to 3.6 V.
The NX3V1G66 allows signals with amplitude up to V
CC
to be transmitted from Y to Z or
from Z to Y. Its ultra-low ON resistance (0.3Ω) and flatness (0.1Ω) ensures minimal
attenuation and distortion of transmitted signals.
es
IWide supply voltage range from 1.4V to 3.6V
IVery low ON resistance (peak):
N0.8Ω (typical) at V
CC
=1.4V
N0.5Ω (typical) at V
CC
=1.65V
N0.3Ω (typical) at V
CC
=2.3V
N0.25Ω (typical) at V
CC
=2.7V
IHigh noise immunity
IESD protection:
NHBM JESD22-A114E Class 3A exceeds 7500V
NMM JESD22-A115-A exceeds 200V
NCDM AEC-Q100-011 revision B exceeds 1000V
ICMOS low-power consumption
ILatch-up performance exceeds 100mA per JESD78 Class II Level A
IDirect interface with TTL levels at 3.0 V
IControl input accepts voltages above supply voltage
IHigh current handling capability (500 mA continuous current under 3.3 V supply)
ISpecified from−40°C to +85°C and from−40°C to +125°C
ations
ICell phone
IPDA
IPortable media player
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NXP Semiconductors
NX3V1G66
Low-voltage analog switch
ng information
Table ng information
Package
Temperature rangeName
NX3V1G66GW
NX3V1G66GM
−40°Cto+125°C
−40°C to+125°C
DescriptionVersion
SOT353-1
SOT886
TSSOP5plastic thin shrink small outline package; 5 leads;
bodywidth 1.25 mm
XSON6plastic extremely thin small outline package; noleads;
6 terminals; body 1×1.45×0.5mm
Type number
g
Table g
Marking code
dL
dL
Type number
NX3V1G66GW
NX3V1G66GM
onal diagram
E
ZY
001aag487
YZ
E
001aah372
Fig symbolFig diagram
g information
7.1Pinning
NX3V1G66
NX3V1G66
Y
Z
GND
1
2
GND
3
001aai328
Y
5
V
CC
1
6V
CC
Z2
5
n.c.
3
4
E
4
E
001aah832
Transparent top view
Fig configuration SOT353-1 (TSSOP5)Fig configuration SOT886 (XSON6)
NX3V1G66_2© NXP B.V. 2008. All rights reserved.
Product data sheetRev. 02 — 28 July 20082 of 17
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NXP Semiconductors
NX3V1G66
Low-voltage analog switch
7.2Pin description
Table 3.
Symbol
Y
Z
GND
E
n.c.
V
CC
Pin description
Pin
SOT353-1
1
2
3
4
-
5
SOT886
1
2
3
4
5
6
independent input or output
independent output or input
ground (0V)
enable input (active HIGH)
not connected
supply voltage
Description
onal description
Table 4.
Input E
L
H
[1]H=HIGH voltage level; L=LOW voltage level.
Function table
[1]
Switch
OFF-state
ON-state
ng values
Table ng values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
V
SW
I
IK
I
SK
I
SW
Parameter
supply voltage
input voltage
switch voltage
input clamping current
switch clamping current
switch current
V
I
<−0.5V
V
I
<−0.5V or V
I
>V
CC
+ 0.5 V
V
SW
>−0.5V or V
SW
< V
CC
+ 0.5 V;
sourceorsink current
V
SW
>−0.5V or V
SW
< V
CC
+ 0.5 V;
pulsedat1msduration, < 10% duty cycle;
peak current
T
stg
P
tot
[1]
[2]
[3]
[1]
[2]
ConditionsMin
−0.5
−0.5
−0.5
−50
-
-
-
Max
+4.6
+4.6
-
±50
±500
±750
Unit
V
V
mA
mA
mA
mA
V
CC
+ 0.5V
storage temperature
total power dissipationT
amb
=−40°Cto+125°C
[3]
−65
-
+150
250
°C
mW
The minimum input voltage rating may be exceeded if the input current rating is observed.
The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.
For TSSOP5 package: above 87.5°C the value of P
tot
derates linearly with 4.0mW/K.
For XSON6 package: above 45°C the value of P
tot
derates linearly with 2.4mW/K.
NX3V1G66_2© NXP B.V. 2008. All rights reserved.
Product data sheetRev. 02 — 28 July 20083 of 17
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NXP Semiconductors
NX3V1G66
Low-voltage analog switch
ended operating conditions
Table 6.
V
CC
V
I
V
SW
T
amb
∆t/∆V
[1]
Recommended operating conditions
Conditions
enable input E
[1]
SymbolParameter
supply voltage
input voltage
switch voltage
ambient temperature
input transition rise and fall rate
Min
1.4
0
0
−40
-
Max
3.6
3.6
V
CC
+125
200
Unit
V
V
V
°C
ns/VV
CC
=1.4Vto3.6V
[2]
To avoid sinking GND current from terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch
must not exceed 0.4V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit
for the voltage drop across the switch.
Applies to control signal levels.[2]
characteristics
Table characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0V).
SymbolParameterConditions
Min
V
IH
HIGH-level
input voltage
V
CC
=1.4Vto1.95V
V
CC
=2.3Vto2.7V
V
CC
=2.7Vto3.6V
V
IL
LOW-level
input voltage
V
CC
=1.4Vto1.95V
V
CC
=2.3Vto2.7V
V
CC
=2.7Vto3.6V
I
I
input leakage
current
OFF-state
leakage
current
ON-state
leakage
current
enable input E;
V
I
=GNDto3.6V;
V
CC
=1.4Vto 3.6V
Y port; seeFigure5;
V
CC
=1.4Vto 3.6V
Z port; seeFigure6;
V
CC
=1.4Vto3.6 V
0.65V
CC
1.7
2.0
-
-
-
-
T
amb
= 25°C
Typ
-
-
-
-
-
-
-
Max
-
-
-
0.35V
CC
0.7
0.8
-
T
amb
=−40°C to +125°C
Min
0.65V
CC
1.7
2.0
-
-
-
-
MaxMax
(85°C)(125°C)
-
-
-
0.7
0.8
±0.5
-
-
-
0.7
0.8
±1
V
V
V
V
V
µA
Unit
0.35V
CC
0.35V
CC
V
I
S(OFF)
--±5-±50±500nA
I
S(ON)
--±5-±50±500nA
I
CC
supply currentV
I
=V
CC
orGND;
V
CC
=3.6V;
V
SW
=GNDorV
CC
; I
O
= 0A
input
capacitance
OFF-state
capacitance
ON-state
capacitance
--±100-6906000nA
C
I
C
S(OFF)
C
S(ON)
-
-
-
1.0
70
205
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
NX3V1G66_2© NXP B.V. 2008. All rights reserved.
Product data sheetRev. 02 — 28 July 20084 of 17
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NX3V1G66
Low-voltage analog switch
11.1Test circuits
V
CC
V
IL
I
S
V
I
V
CC
V
IH
Y
I
S
V
O
V
I
E
Z
GND
E
I
S
Z
GND
Y
V
O
001aag488
001aag489
V
I
=0.3VorV
CC
−0.3 V; V
O
=V
CC
− 0.3 V or 0.3 V.V
I
=0.3Vor V
CC
−0.3 V; V
O
=open circuit.
Fig circuit for measuring OFF-state leakage
current
Fig circuit for measuring ON-state leakage
current
11.2ON resistance
Table ance R
ON
At recommended operating conditions; voltages are referenced to GND (ground = 0V); for graphs seeFigure8 toFigure13.
Symbol
R
ON(peak)
Parameter
ON resistance
(peak)
Conditions
V
I
=GNDtoV
CC
;
I
SW
=100mA; seeFigure7
V
CC
=1.4V
V
CC
=1.65V
V
CC
=2.3V
V
CC
=2.7V
R
ON(flat)
ON resistance
(flatness)
V
I
=GNDtoV
CC
;
I
SW
=100mA
V
CC
=1.4V
V
CC
=1.65V
V
CC
=2.3V
V
CC
=2.7V
[1]
[2]
Typical values are measured at T
amb
=25°C.
Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V
CC
and
temperature.
[2]
T
amb
=−40°C to +85°CT
amb
=−40°C to +125°CUnit
MinTyp
[1]
MaxMinMax
-
-
-
-
0.8
0.5
0.3
0.25
1.9
0.8
0.5
0.45
-
-
-
-
2.1
0.9
0.6
0.5
Ω
Ω
Ω
Ω
-
-
-
-
0.5
0.25
0.1
0.1
1.7
0.6
0.2
0.2
-
-
-
-
1.8
0.7
0.2
0.2
Ω
Ω
Ω
Ω
NX3V1G66_2© NXP B.V. 2008. All rights reserved.
Product data sheetRev. 02 — 28 July 20085 of 17
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NX3V1G66
Low-voltage analog switch
11.3ON resistance test circuit and graphs
0.8
R
ON
(Ω)
0.6
V
SW
V
CC
V
IH
E
(3)
001aah800
0.4
(1)
(2)
Z
V
I
Y
GND
0.2
(4)
(5)
I
SW
0
001aah375
0123
V
I
(V)
4
R
ON
=V
SW
/ I
SW
.(1)V
CC
=1.5V.
(2)V
CC
=1.8V.
(3)V
CC
=2.5V.
(4)V
CC
=2.7V.
(5)V
CC
=3.3V.
Measured at T
amb
=25°C.
Fig circuit for measuring ON resistanceFig l ON resistance as a function of input
voltage
0.8
R
ON
(Ω)
0.6
001aah805
0.6
R
ON
(Ω)
0.4
(1)
001aah801
0.4
(1)
(2)
(3)
(2)
(3)
0.2
(4)
0.2
(4)
0
012
V
I
(V)
3
0
012
V
I
(V)
3
(1)T
amb
=125°C.
(2)T
amb
=85°C.
(3)T
amb
=25°C.
(4)T
amb
=−40°C.
(1)T
amb
=125°C.
(2)T
amb
=85°C.
(3)T
amb
=25°C.
(4)T
amb
=−40°C.
Fig resistance as a function of input voltage;
V
CC
=1.5V
Fig resistance as a function of input voltage;
V
CC
=1.8V
© NXP B.V. 2008. All rights 3V1G66_2
Product data sheetRev. 02 — 28 July 20086 of 17
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NX3V1G66
Low-voltage analog switch
0.6
R
ON
(Ω)
0.4
(1)
(2)
(3)
001aah802
0.6
R
ON
(Ω)
0.4
(1)
(2)
001aah803
0.2
(4)
0.2
(3)
(4)
0
012
V
I
(V)
3
0
012
V
I
(V)
3
(1)T
amb
=125°C.
(2)T
amb
=85°C.
(3)T
amb
=25°C.
(4)T
amb
=−40°C.
(1)T
amb
=125°C.
(2)T
amb
=85°C.
(3)T
amb
=25°C.
(4)T
amb
=−40°C.
Fig resistance as a function of input voltage;
V
CC
=2.5V
Fig resistance as a function of input voltage;
V
CC
=2.7V
0.6
R
ON
(Ω)
0.4
(1)
(2)
001aah804
0.2
(3)
(4)
0
0123
V
I
(V)
4
(1)T
amb
=125°C.
(2)T
amb
=85°C.
(3)T
amb
=25°C.
(4)T
amb
=−40°C.
Fig resistance as a function of input voltage; V
CC
=3.3V
NX3V1G66_2© NXP B.V. 2008. All rights reserved.
Product data sheetRev. 02 — 28 July 20087 of 17
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NX3V1G66
Low-voltage analog switch
c characteristics
Table c characteristics
At recommended operating conditions; voltages are referenced to GND (ground=0V); for test circuitFigure15.
SymbolParameterConditionsT
amb
= 25°C
Min
t
en
enable timeE to Y; seeFigure14
V
CC
=1.4Vto1.6V
V
CC
=1.65Vto1.95V
V
CC
=2.3Vto2.7V
V
CC
=2.7Vto 3.6V
t
dis
disable timeE to Y; seeFigure14
V
CC
=1.4Vto1.6V
V
CC
=1.65Vto1.95V
V
CC
=2.3Vto2.7V
V
CC
=2.7Vto 3.6V
[1]
T
amb
=−40°C to +125°CUnit
MinMax
(85°C)
45
38
29
25
23
17
11
10
Max
(125°C)
49
41
31
28
26
19
12
11
ns
ns
ns
ns
ns
ns
ns
ns
Typ
[1]
Max
-
-
-
-
-
-
-
-
28
23
17
15
12
9
6
5
42
35
27
24
22
16
10
9
-
-
-
-
-
-
-
-
Typical values are measured at T
amb
=25°C and V
CC
= 1.5 V, 1.8 V, 2.5 V and 3.3 V respectively.
12.1Waveform and test circuits
V
I
E input
GND
t
en
t
dis
V
M
Y output
OFF to HIGH
HIGH to OFF
V
OH
V
X
V
X
GND
switch
disabled
switch
enabled
switch
disabled
001aah875
Measurement points are given inTable10.
Logic level: V
OH
is the typical output voltage that occurs with the output load.
Fig and disable times
Table 10.
V
CC
1.4V to 3.6V
Measurement points
Input
V
M
0.5V
CC
Output
V
X
0.9V
OH
Supply voltage
NX3V1G66_2© NXP B.V. 2008. All rights reserved.
Product data sheetRev. 02 — 28 July 20088 of 17
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NX3V1G66
Low-voltage analog switch
V
CC
E
Y/ZZ/Y
G
V
I
V
V
O
R
L
C
L
V
EXT
= 1.5 V
001aah377
Test data is given inTable11.
Definitions test circuit:
R
L
= Load resistance.
C
L
= Load capacitance including jig and probe capacitance.
V
EXT
= External voltage for measuring switching times.
Fig circuit for switching times
Table 11.
V
CC
1.4V to 3.6V
Test data
Input
V
I
V
CC
t
r
, t
f
≤2.5ns
Load
C
L
35pF
R
L
50Ω
Supply voltage
12.2Additional dynamic characteristics
Table onal dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground=0V); V
I
= GND or V
CC
(unless otherwise
specified); t
r
= t
f
≤
2.5ns; T
amb
= 25
°
C.
SymbolParameter
THDtotal harmonic
distortion
Conditions
f
i
=20Hzto20 kHz; R
L
=32Ω; seeFigure16
V
CC
=1.4V; V
I
=1V(p-p)
V
CC
=1.65V; V
I
=1.2V (p-p)
V
CC
=2.3V; V
I
=1.5V(p-p)
V
CC
=2.7V; V
I
=2V(p-p)
f
(−3dB)
α
iso
V
ct
−3 dB frequency
response
isolation (OFF-state)
crosstalk voltage
R
L
=50Ω; seeFigure17
V
CC
=1.4 V to 3.6V
f
i
=100kHz; R
L
=50Ω; seeFigure18
V
CC
=1.4 V to 3.6V
between digital input and switch;
f
i
=1MHz;C
L
=50pF; R
L
=50Ω; seeFigure19
V
CC
=1.4 V to 3.6V-0.32-V
[1]
[1]
[1]
Min
-
-
-
-
-
-
Typ
0.05
0.03
0.01
0.01
25
−90
Max
-
-
-
-
-
-
Unit
%
%
%
%
MHz
dB
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Product data sheetRev. 02 — 28 July 20089 of 17
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NX3V1G66
Low-voltage analog switch
Table onal dynamic characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground=0V); V
I
= GND or V
CC
(unless otherwise
specified); t
r
= t
f
≤
2.5ns; T
amb
= 25
°
C.
SymbolParameter
Q
inj
charge injection
Conditions
f
i
=1MHz; C
L
=0.1 nF; R
L
=1 MΩ; V
gen
=0V;
R
gen
=0Ω; seeFigure20
V
CC
=1.5 V
V
CC
=1.8 V
V
CC
=2.5V
V
CC
=3.3V
[1]f
i
is biased at 0.5V
CC
.
MinTypMaxUnit
-
-
-
-
6.5
6.5
6.5
6.5
-
-
-
-
pC
pC
pC
pC
12.3Test circuits
V
CC
V
IH
E
Y/ZZ/Y
0.5V
CC
R
L
f
i
D
001aah378
Fig circuit for measuring total harmonic distortion
V
CC
V
IH
E
Y/ZZ/Y
0.5V
CC
R
L
f
i
dB
001aah379
Adjust f
i
voltage to obtain 0dBm level at output. Increase f
i
frequency until dB meter reads−3dB.
Fig circuit for measuring the frequency response when switch is in ON-state
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Product data sheetRev. 02 — 28 July 200810 of 17
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NX3V1G66
Low-voltage analog switch
0.5V
CC
R
L
V
CC
V
IL
E
Y/ZZ/Y
0.5V
CC
R
L
f
i
dB
001aah380
Adjust f
i
voltage to obtain 0dBm level at input.
Fig circuit for measuring isolation (OFF-state)
V
CC
E
Y/ZZ/Y
G
V
I
R
L
R
L
C
L
V
V
O
0.5V
CC
0.5V
CC
001aah383
circuit
logic
input (E)
offonoff
V
O
V
ct
001aah381
and output pulse definitions
Fig circuit for measuring crosstalk voltage between digital input and switch
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Product data sheetRev. 02 — 28 July 200811 of 17
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NX3V1G66
Low-voltage analog switch
V
CC
E
Y/ZZ/Y
R
gen
G
V
I
V
V
O
R
L
C
L
V
gen
GND
001aah385
circuit.
logic
input (E)
offonoff
V
O
V
O
001aah384
and output pulse definitions.
Definition: Q
inj
=∆V
O
×C
L
.
∆V
O
= output voltage variation.
R
gen
= generator resistance.
V
gen
= generator voltage.
Fig circuit for measuring charge injection
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Product data sheetRev. 02 — 28 July 200812 of 17
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NX3V1G66
Low-voltage analog switch
e outline
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm
SOT353-1
D
E
A
X
c
y
H
E
v
M
A
Z
5
4
A
2
A
1
A
(A
3
)
θ
1
e
e
1
b
p
3
w
M
detail X
L
p
L
01.5
scale
3 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
max.
1.1
A
1
0.1
0
A
2
1.0
0.8
A
3
0.15
b
p
0.30
0.15
c
0.25
0.08
D
(1)
2.25
1.85
E
(1)
1.35
1.15
e
0.65
e
1
1.3
H
E
2.25
2.0
L
0.425
L
p
0.46
0.21
v
0.3
w
0.1
y
0.1
Z
(1)
0.60
0.15
θ
7°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT353-1
REFERENCES
IEC JEDEC
MO-203
JEITA
SC-88A
EUROPEAN
PROJECTION
ISSUE DATE
00-09-01
03-02-19
Fig e outline SOT353-1 (TSSOP5)
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Product data sheetRev. 02 — 28 July 200813 of 17
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NXP Semiconductors
NX3V1G66
Low-voltage analog switch
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b
123
4×
L
1
L
(2)
e
6
e
1
5
e
1
4
6×
(2)
A
A
1
D
E
terminal 1
index area
0
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
(1)
max
0.5
A
1
max
0.04
b
0.25
0.17
D
1.5
1.4
E
1.05
0.95
e
0.6
e
1
0.5
L
0.35
0.27
L
1
0.40
0.32
1
scale
2 mm
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
OUTLINE
VERSION
SOT886
REFERENCES
IECJEDEC
MO-252
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-07-15
04-07-22
Fig e outline SOT886 (XSON6)
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Product data sheetRev. 02 — 28 July 200814 of 17
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NX3V1G66
Low-voltage analog switch
iations
Table 13.
Acronym
CDM
CMOS
ESD
HBM
MM
PDA
TTL
Abbreviations
Description
Charged Device Model
Complementary Metal-Oxide Semiconductor
ElectroStatic Discharge
Human Body Model
Machine Model
Personal Digital Assistant
Transistor-Transistor Logic
on history
Table on history
Release date
20080728
Data sheet status
Product data sheet
Product data sheet
Change notice
-
-
Supersedes
NX3V1G66_1
-
Document ID
NX3V1G66_2
Modifications:
NX3V1G66_1
•
Added type number NX3V1G66GW (TSSOP5 / SOT353-1 package)
20080421
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Product data sheetRev. 02 — 28 July 200815 of 17
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NXP Semiconductors
NX3V1G66
Low-voltage analog switch
information
16.1Data sheet status
Document status
[1][2]
Objective [short] data sheet
Preliminary [short] data sheet
Product [short] data sheet
[1]
[2]
[3]
Product status
[3]
Development
Qualification
Production
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsestproductstatus
information is available on the Internet at URL
.
16.2Definitions
Draft —The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
informationincludedhereinandshallhavenoliabilityfortheconsequencesof
use of such information.
Short data sheet —A short data sheet is an extract from a full data sheet
withthesameproducttypenumber(s)datasheetisintended
forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications —Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values —Stress above one or more limiting values (as defined in
theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent
ngvaluesarestressratingsonlyandoperationof
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale —NXP Semiconductors products are sold
subjecttothegeneraltermsandconditionsofcommercialsale,aspublished
at
/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license —Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents
or other industrial or intellectual property rights.
16.3Disclaimers
General —Information in this document is believed to be accurate and
r,NXPSemiconductorsdoesnotgiveanyrepresentationsor
warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch
information and shall have no liability for the consequences of use of such
information.
Right to make changes —NXPSemiconductorsreservestherighttomake
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
cumentsupersedesandreplacesallinformationsuppliedprior
to the publication hereof.
Suitability for use —NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
16.4Trademarks
Notice:Allreferencedbrands,productnames,servicenamesandtrademarks
are the property of their respective owners.
t information
For more information, please visit:
For sales office addresses, please send an email to:salesaddresses@
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Product data sheetRev. 02 — 28 July 200816 of 17
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ts
1General description. . . . . . . . . . . . . . . . . . . . . . 1
2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4Ordering information. . . . . . . . . . . . . . . . . . . . . 2
5Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
6Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
7Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
7.1Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
7.2Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
8Functional description . . . . . . . . . . . . . . . . . . . 3
9Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
10Recommended operating conditions. . . . . . . . 4
11Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
11.1Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
11.2ON resistance. . . . . . . . . . . . . . . . . . . . . . . . . . 5
11.3ON resistance test circuit and graphs. . . . . . . . 6
12Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
12.1Waveform and test circuits . . . . . . . . . . . . . . . . 8
12.2Additional dynamic characteristics . . . . . . . . . . 9
12.3Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
14Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15
15Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
16Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
16.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
16.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
16.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
16.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
17Contact information. . . . . . . . . . . . . . . . . . . . . 16
18Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
NX3V1G66
Low-voltage analog switch
Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)
described herein, have been included in section ‘Legal information’.
© NXP rights reserved.
For more information, please visit:
For sales office addresses, please send an email to: salesaddresses@
Date of release: 28 July 2008
Document identifier: NX3V1G66_2
2024年10月29日发(作者：用从蕾)
元器件交易网
NX3V1G66
Low-voltage analog switch
Rev. 02 — 28 July 2008Product data sheet
l description
The NX3V1G66 provides one single-pole single-throw analog switch function. It has two
input/output terminals (Y and Z) and an active HIGH enable input pin (E). When pin E is
LOW, the analog switch is turned off.
Schmitttriggeractionattheenableinput(E)makesthecircuittoleranttoslowerinputrise
and fall times across the entire V
CC
range from 1.4 V to 3.6 V.
The NX3V1G66 allows signals with amplitude up to V
CC
to be transmitted from Y to Z or
from Z to Y. Its ultra-low ON resistance (0.3Ω) and flatness (0.1Ω) ensures minimal
attenuation and distortion of transmitted signals.
es
IWide supply voltage range from 1.4V to 3.6V
IVery low ON resistance (peak):
N0.8Ω (typical) at V
CC
=1.4V
N0.5Ω (typical) at V
CC
=1.65V
N0.3Ω (typical) at V
CC
=2.3V
N0.25Ω (typical) at V
CC
=2.7V
IHigh noise immunity
IESD protection:
NHBM JESD22-A114E Class 3A exceeds 7500V
NMM JESD22-A115-A exceeds 200V
NCDM AEC-Q100-011 revision B exceeds 1000V
ICMOS low-power consumption
ILatch-up performance exceeds 100mA per JESD78 Class II Level A
IDirect interface with TTL levels at 3.0 V
IControl input accepts voltages above supply voltage
IHigh current handling capability (500 mA continuous current under 3.3 V supply)
ISpecified from−40°C to +85°C and from−40°C to +125°C
ations
ICell phone
IPDA
IPortable media player
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NXP Semiconductors
NX3V1G66
Low-voltage analog switch
ng information
Table ng information
Package
Temperature rangeName
NX3V1G66GW
NX3V1G66GM
−40°Cto+125°C
−40°C to+125°C
DescriptionVersion
SOT353-1
SOT886
TSSOP5plastic thin shrink small outline package; 5 leads;
bodywidth 1.25 mm
XSON6plastic extremely thin small outline package; noleads;
6 terminals; body 1×1.45×0.5mm
Type number
g
Table g
Marking code
dL
dL
Type number
NX3V1G66GW
NX3V1G66GM
onal diagram
E
ZY
001aag487
YZ
E
001aah372
Fig symbolFig diagram
g information
7.1Pinning
NX3V1G66
NX3V1G66
Y
Z
GND
1
2
GND
3
001aai328
Y
5
V
CC
1
6V
CC
Z2
5
n.c.
3
4
E
4
E
001aah832
Transparent top view
Fig configuration SOT353-1 (TSSOP5)Fig configuration SOT886 (XSON6)
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Product data sheetRev. 02 — 28 July 20082 of 17
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NX3V1G66
Low-voltage analog switch
7.2Pin description
Table 3.
Symbol
Y
Z
GND
E
n.c.
V
CC
Pin description
Pin
SOT353-1
1
2
3
4
-
5
SOT886
1
2
3
4
5
6
independent input or output
independent output or input
ground (0V)
enable input (active HIGH)
not connected
supply voltage
Description
onal description
Table 4.
Input E
L
H
[1]H=HIGH voltage level; L=LOW voltage level.
Function table
[1]
Switch
OFF-state
ON-state
ng values
Table ng values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
V
SW
I
IK
I
SK
I
SW
Parameter
supply voltage
input voltage
switch voltage
input clamping current
switch clamping current
switch current
V
I
<−0.5V
V
I
<−0.5V or V
I
>V
CC
+ 0.5 V
V
SW
>−0.5V or V
SW
< V
CC
+ 0.5 V;
sourceorsink current
V
SW
>−0.5V or V
SW
< V
CC
+ 0.5 V;
pulsedat1msduration, < 10% duty cycle;
peak current
T
stg
P
tot
[1]
[2]
[3]
[1]
[2]
ConditionsMin
−0.5
−0.5
−0.5
−50
-
-
-
Max
+4.6
+4.6
-
±50
±500
±750
Unit
V
V
mA
mA
mA
mA
V
CC
+ 0.5V
storage temperature
total power dissipationT
amb
=−40°Cto+125°C
[3]
−65
-
+150
250
°C
mW
The minimum input voltage rating may be exceeded if the input current rating is observed.
The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.
For TSSOP5 package: above 87.5°C the value of P
tot
derates linearly with 4.0mW/K.
For XSON6 package: above 45°C the value of P
tot
derates linearly with 2.4mW/K.
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Product data sheetRev. 02 — 28 July 20083 of 17
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NX3V1G66
Low-voltage analog switch
ended operating conditions
Table 6.
V
CC
V
I
V
SW
T
amb
∆t/∆V
[1]
Recommended operating conditions
Conditions
enable input E
[1]
SymbolParameter
supply voltage
input voltage
switch voltage
ambient temperature
input transition rise and fall rate
Min
1.4
0
0
−40
-
Max
3.6
3.6
V
CC
+125
200
Unit
V
V
V
°C
ns/VV
CC
=1.4Vto3.6V
[2]
To avoid sinking GND current from terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch
must not exceed 0.4V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit
for the voltage drop across the switch.
Applies to control signal levels.[2]
characteristics
Table characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0V).
SymbolParameterConditions
Min
V
IH
HIGH-level
input voltage
V
CC
=1.4Vto1.95V
V
CC
=2.3Vto2.7V
V
CC
=2.7Vto3.6V
V
IL
LOW-level
input voltage
V
CC
=1.4Vto1.95V
V
CC
=2.3Vto2.7V
V
CC
=2.7Vto3.6V
I
I
input leakage
current
OFF-state
leakage
current
ON-state
leakage
current
enable input E;
V
I
=GNDto3.6V;
V
CC
=1.4Vto 3.6V
Y port; seeFigure5;
V
CC
=1.4Vto 3.6V
Z port; seeFigure6;
V
CC
=1.4Vto3.6 V
0.65V
CC
1.7
2.0
-
-
-
-
T
amb
= 25°C
Typ
-
-
-
-
-
-
-
Max
-
-
-
0.35V
CC
0.7
0.8
-
T
amb
=−40°C to +125°C
Min
0.65V
CC
1.7
2.0
-
-
-
-
MaxMax
(85°C)(125°C)
-
-
-
0.7
0.8
±0.5
-
-
-
0.7
0.8
±1
V
V
V
V
V
µA
Unit
0.35V
CC
0.35V
CC
V
I
S(OFF)
--±5-±50±500nA
I
S(ON)
--±5-±50±500nA
I
CC
supply currentV
I
=V
CC
orGND;
V
CC
=3.6V;
V
SW
=GNDorV
CC
; I
O
= 0A
input
capacitance
OFF-state
capacitance
ON-state
capacitance
--±100-6906000nA
C
I
C
S(OFF)
C
S(ON)
-
-
-
1.0
70
205
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
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Product data sheetRev. 02 — 28 July 20084 of 17
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NX3V1G66
Low-voltage analog switch
11.1Test circuits
V
CC
V
IL
I
S
V
I
V
CC
V
IH
Y
I
S
V
O
V
I
E
Z
GND
E
I
S
Z
GND
Y
V
O
001aag488
001aag489
V
I
=0.3VorV
CC
−0.3 V; V
O
=V
CC
− 0.3 V or 0.3 V.V
I
=0.3Vor V
CC
−0.3 V; V
O
=open circuit.
Fig circuit for measuring OFF-state leakage
current
Fig circuit for measuring ON-state leakage
current
11.2ON resistance
Table ance R
ON
At recommended operating conditions; voltages are referenced to GND (ground = 0V); for graphs seeFigure8 toFigure13.
Symbol
R
ON(peak)
Parameter
ON resistance
(peak)
Conditions
V
I
=GNDtoV
CC
;
I
SW
=100mA; seeFigure7
V
CC
=1.4V
V
CC
=1.65V
V
CC
=2.3V
V
CC
=2.7V
R
ON(flat)
ON resistance
(flatness)
V
I
=GNDtoV
CC
;
I
SW
=100mA
V
CC
=1.4V
V
CC
=1.65V
V
CC
=2.3V
V
CC
=2.7V
[1]
[2]
Typical values are measured at T
amb
=25°C.
Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V
CC
and
temperature.
[2]
T
amb
=−40°C to +85°CT
amb
=−40°C to +125°CUnit
MinTyp
[1]
MaxMinMax
-
-
-
-
0.8
0.5
0.3
0.25
1.9
0.8
0.5
0.45
-
-
-
-
2.1
0.9
0.6
0.5
Ω
Ω
Ω
Ω
-
-
-
-
0.5
0.25
0.1
0.1
1.7
0.6
0.2
0.2
-
-
-
-
1.8
0.7
0.2
0.2
Ω
Ω
Ω
Ω
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Product data sheetRev. 02 — 28 July 20085 of 17
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NX3V1G66
Low-voltage analog switch
11.3ON resistance test circuit and graphs
0.8
R
ON
(Ω)
0.6
V
SW
V
CC
V
IH
E
(3)
001aah800
0.4
(1)
(2)
Z
V
I
Y
GND
0.2
(4)
(5)
I
SW
0
001aah375
0123
V
I
(V)
4
R
ON
=V
SW
/ I
SW
.(1)V
CC
=1.5V.
(2)V
CC
=1.8V.
(3)V
CC
=2.5V.
(4)V
CC
=2.7V.
(5)V
CC
=3.3V.
Measured at T
amb
=25°C.
Fig circuit for measuring ON resistanceFig l ON resistance as a function of input
voltage
0.8
R
ON
(Ω)
0.6
001aah805
0.6
R
ON
(Ω)
0.4
(1)
001aah801
0.4
(1)
(2)
(3)
(2)
(3)
0.2
(4)
0.2
(4)
0
012
V
I
(V)
3
0
012
V
I
(V)
3
(1)T
amb
=125°C.
(2)T
amb
=85°C.
(3)T
amb
=25°C.
(4)T
amb
=−40°C.
(1)T
amb
=125°C.
(2)T
amb
=85°C.
(3)T
amb
=25°C.
(4)T
amb
=−40°C.
Fig resistance as a function of input voltage;
V
CC
=1.5V
Fig resistance as a function of input voltage;
V
CC
=1.8V
© NXP B.V. 2008. All rights 3V1G66_2
Product data sheetRev. 02 — 28 July 20086 of 17
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NX3V1G66
Low-voltage analog switch
0.6
R
ON
(Ω)
0.4
(1)
(2)
(3)
001aah802
0.6
R
ON
(Ω)
0.4
(1)
(2)
001aah803
0.2
(4)
0.2
(3)
(4)
0
012
V
I
(V)
3
0
012
V
I
(V)
3
(1)T
amb
=125°C.
(2)T
amb
=85°C.
(3)T
amb
=25°C.
(4)T
amb
=−40°C.
(1)T
amb
=125°C.
(2)T
amb
=85°C.
(3)T
amb
=25°C.
(4)T
amb
=−40°C.
Fig resistance as a function of input voltage;
V
CC
=2.5V
Fig resistance as a function of input voltage;
V
CC
=2.7V
0.6
R
ON
(Ω)
0.4
(1)
(2)
001aah804
0.2
(3)
(4)
0
0123
V
I
(V)
4
(1)T
amb
=125°C.
(2)T
amb
=85°C.
(3)T
amb
=25°C.
(4)T
amb
=−40°C.
Fig resistance as a function of input voltage; V
CC
=3.3V
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NX3V1G66
Low-voltage analog switch
c characteristics
Table c characteristics
At recommended operating conditions; voltages are referenced to GND (ground=0V); for test circuitFigure15.
SymbolParameterConditionsT
amb
= 25°C
Min
t
en
enable timeE to Y; seeFigure14
V
CC
=1.4Vto1.6V
V
CC
=1.65Vto1.95V
V
CC
=2.3Vto2.7V
V
CC
=2.7Vto 3.6V
t
dis
disable timeE to Y; seeFigure14
V
CC
=1.4Vto1.6V
V
CC
=1.65Vto1.95V
V
CC
=2.3Vto2.7V
V
CC
=2.7Vto 3.6V
[1]
T
amb
=−40°C to +125°CUnit
MinMax
(85°C)
45
38
29
25
23
17
11
10
Max
(125°C)
49
41
31
28
26
19
12
11
ns
ns
ns
ns
ns
ns
ns
ns
Typ
[1]
Max
-
-
-
-
-
-
-
-
28
23
17
15
12
9
6
5
42
35
27
24
22
16
10
9
-
-
-
-
-
-
-
-
Typical values are measured at T
amb
=25°C and V
CC
= 1.5 V, 1.8 V, 2.5 V and 3.3 V respectively.
12.1Waveform and test circuits
V
I
E input
GND
t
en
t
dis
V
M
Y output
OFF to HIGH
HIGH to OFF
V
OH
V
X
V
X
GND
switch
disabled
switch
enabled
switch
disabled
001aah875
Measurement points are given inTable10.
Logic level: V
OH
is the typical output voltage that occurs with the output load.
Fig and disable times
Table 10.
V
CC
1.4V to 3.6V
Measurement points
Input
V
M
0.5V
CC
Output
V
X
0.9V
OH
Supply voltage
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NX3V1G66
Low-voltage analog switch
V
CC
E
Y/ZZ/Y
G
V
I
V
V
O
R
L
C
L
V
EXT
= 1.5 V
001aah377
Test data is given inTable11.
Definitions test circuit:
R
L
= Load resistance.
C
L
= Load capacitance including jig and probe capacitance.
V
EXT
= External voltage for measuring switching times.
Fig circuit for switching times
Table 11.
V
CC
1.4V to 3.6V
Test data
Input
V
I
V
CC
t
r
, t
f
≤2.5ns
Load
C
L
35pF
R
L
50Ω
Supply voltage
12.2Additional dynamic characteristics
Table onal dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground=0V); V
I
= GND or V
CC
(unless otherwise
specified); t
r
= t
f
≤
2.5ns; T
amb
= 25
°
C.
SymbolParameter
THDtotal harmonic
distortion
Conditions
f
i
=20Hzto20 kHz; R
L
=32Ω; seeFigure16
V
CC
=1.4V; V
I
=1V(p-p)
V
CC
=1.65V; V
I
=1.2V (p-p)
V
CC
=2.3V; V
I
=1.5V(p-p)
V
CC
=2.7V; V
I
=2V(p-p)
f
(−3dB)
α
iso
V
ct
−3 dB frequency
response
isolation (OFF-state)
crosstalk voltage
R
L
=50Ω; seeFigure17
V
CC
=1.4 V to 3.6V
f
i
=100kHz; R
L
=50Ω; seeFigure18
V
CC
=1.4 V to 3.6V
between digital input and switch;
f
i
=1MHz;C
L
=50pF; R
L
=50Ω; seeFigure19
V
CC
=1.4 V to 3.6V-0.32-V
[1]
[1]
[1]
Min
-
-
-
-
-
-
Typ
0.05
0.03
0.01
0.01
25
−90
Max
-
-
-
-
-
-
Unit
%
%
%
%
MHz
dB
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NX3V1G66
Low-voltage analog switch
Table onal dynamic characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground=0V); V
I
= GND or V
CC
(unless otherwise
specified); t
r
= t
f
≤
2.5ns; T
amb
= 25
°
C.
SymbolParameter
Q
inj
charge injection
Conditions
f
i
=1MHz; C
L
=0.1 nF; R
L
=1 MΩ; V
gen
=0V;
R
gen
=0Ω; seeFigure20
V
CC
=1.5 V
V
CC
=1.8 V
V
CC
=2.5V
V
CC
=3.3V
[1]f
i
is biased at 0.5V
CC
.
MinTypMaxUnit
-
-
-
-
6.5
6.5
6.5
6.5
-
-
-
-
pC
pC
pC
pC
12.3Test circuits
V
CC
V
IH
E
Y/ZZ/Y
0.5V
CC
R
L
f
i
D
001aah378
Fig circuit for measuring total harmonic distortion
V
CC
V
IH
E
Y/ZZ/Y
0.5V
CC
R
L
f
i
dB
001aah379
Adjust f
i
voltage to obtain 0dBm level at output. Increase f
i
frequency until dB meter reads−3dB.
Fig circuit for measuring the frequency response when switch is in ON-state
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Product data sheetRev. 02 — 28 July 200810 of 17
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NX3V1G66
Low-voltage analog switch
0.5V
CC
R
L
V
CC
V
IL
E
Y/ZZ/Y
0.5V
CC
R
L
f
i
dB
001aah380
Adjust f
i
voltage to obtain 0dBm level at input.
Fig circuit for measuring isolation (OFF-state)
V
CC
E
Y/ZZ/Y
G
V
I
R
L
R
L
C
L
V
V
O
0.5V
CC
0.5V
CC
001aah383
circuit
logic
input (E)
offonoff
V
O
V
ct
001aah381
and output pulse definitions
Fig circuit for measuring crosstalk voltage between digital input and switch
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Product data sheetRev. 02 — 28 July 200811 of 17
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NXP Semiconductors
NX3V1G66
Low-voltage analog switch
V
CC
E
Y/ZZ/Y
R
gen
G
V
I
V
V
O
R
L
C
L
V
gen
GND
001aah385
circuit.
logic
input (E)
offonoff
V
O
V
O
001aah384
and output pulse definitions.
Definition: Q
inj
=∆V
O
×C
L
.
∆V
O
= output voltage variation.
R
gen
= generator resistance.
V
gen
= generator voltage.
Fig circuit for measuring charge injection
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Product data sheetRev. 02 — 28 July 200812 of 17
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NX3V1G66
Low-voltage analog switch
e outline
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm
SOT353-1
D
E
A
X
c
y
H
E
v
M
A
Z
5
4
A
2
A
1
A
(A
3
)
θ
1
e
e
1
b
p
3
w
M
detail X
L
p
L
01.5
scale
3 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
max.
1.1
A
1
0.1
0
A
2
1.0
0.8
A
3
0.15
b
p
0.30
0.15
c
0.25
0.08
D
(1)
2.25
1.85
E
(1)
1.35
1.15
e
0.65
e
1
1.3
H
E
2.25
2.0
L
0.425
L
p
0.46
0.21
v
0.3
w
0.1
y
0.1
Z
(1)
0.60
0.15
θ
7°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT353-1
REFERENCES
IEC JEDEC
MO-203
JEITA
SC-88A
EUROPEAN
PROJECTION
ISSUE DATE
00-09-01
03-02-19
Fig e outline SOT353-1 (TSSOP5)
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Product data sheetRev. 02 — 28 July 200813 of 17
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NX3V1G66
Low-voltage analog switch
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b
123
4×
L
1
L
(2)
e
6
e
1
5
e
1
4
6×
(2)
A
A
1
D
E
terminal 1
index area
0
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
(1)
max
0.5
A
1
max
0.04
b
0.25
0.17
D
1.5
1.4
E
1.05
0.95
e
0.6
e
1
0.5
L
0.35
0.27
L
1
0.40
0.32
1
scale
2 mm
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
OUTLINE
VERSION
SOT886
REFERENCES
IECJEDEC
MO-252
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-07-15
04-07-22
Fig e outline SOT886 (XSON6)
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NX3V1G66
Low-voltage analog switch
iations
Table 13.
Acronym
CDM
CMOS
ESD
HBM
MM
PDA
TTL
Abbreviations
Description
Charged Device Model
Complementary Metal-Oxide Semiconductor
ElectroStatic Discharge
Human Body Model
Machine Model
Personal Digital Assistant
Transistor-Transistor Logic
on history
Table on history
Release date
20080728
Data sheet status
Product data sheet
Product data sheet
Change notice
-
-
Supersedes
NX3V1G66_1
-
Document ID
NX3V1G66_2
Modifications:
NX3V1G66_1
•
Added type number NX3V1G66GW (TSSOP5 / SOT353-1 package)
20080421
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Product data sheetRev. 02 — 28 July 200815 of 17
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NX3V1G66
Low-voltage analog switch
information
16.1Data sheet status
Document status
[1][2]
Objective [short] data sheet
Preliminary [short] data sheet
Product [short] data sheet
[1]
[2]
[3]
Product status
[3]
Development
Qualification
Production
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsestproductstatus
information is available on the Internet at URL
.
16.2Definitions
Draft —The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
informationincludedhereinandshallhavenoliabilityfortheconsequencesof
use of such information.
Short data sheet —A short data sheet is an extract from a full data sheet
withthesameproducttypenumber(s)datasheetisintended
forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications —Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values —Stress above one or more limiting values (as defined in
theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent
ngvaluesarestressratingsonlyandoperationof
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale —NXP Semiconductors products are sold
subjecttothegeneraltermsandconditionsofcommercialsale,aspublished
at
/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license —Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents
or other industrial or intellectual property rights.
16.3Disclaimers
General —Information in this document is believed to be accurate and
r,NXPSemiconductorsdoesnotgiveanyrepresentationsor
warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch
information and shall have no liability for the consequences of use of such
information.
Right to make changes —NXPSemiconductorsreservestherighttomake
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
cumentsupersedesandreplacesallinformationsuppliedprior
to the publication hereof.
Suitability for use —NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
16.4Trademarks
Notice:Allreferencedbrands,productnames,servicenamesandtrademarks
are the property of their respective owners.
t information
For more information, please visit:
For sales office addresses, please send an email to:salesaddresses@
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ts
1General description. . . . . . . . . . . . . . . . . . . . . . 1
2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4Ordering information. . . . . . . . . . . . . . . . . . . . . 2
5Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
6Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
7Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
7.1Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
7.2Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
8Functional description . . . . . . . . . . . . . . . . . . . 3
9Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
10Recommended operating conditions. . . . . . . . 4
11Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
11.1Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
11.2ON resistance. . . . . . . . . . . . . . . . . . . . . . . . . . 5
11.3ON resistance test circuit and graphs. . . . . . . . 6
12Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
12.1Waveform and test circuits . . . . . . . . . . . . . . . . 8
12.2Additional dynamic characteristics . . . . . . . . . . 9
12.3Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
14Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15
15Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15
16Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
16.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
16.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
16.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
16.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
17Contact information. . . . . . . . . . . . . . . . . . . . . 16
18Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
NX3V1G66
Low-voltage analog switch
Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)
described herein, have been included in section ‘Legal information’.
© NXP rights reserved.
For more information, please visit:
For sales office addresses, please send an email to: salesaddresses@
Date of release: 28 July 2008
Document identifier: NX3V1G66_2