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IXTT88N30P中文资料
2024年10月23日发(作者：碧鲁元思)
元器件交易网
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXTH 88N30P
IXTT 88N30P
R
DS(on)
V
DSS
= 300 V
I
D25
= 88 A
= 40 m
Ω
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Maximum Ratings
300
300
±20
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
TO-247 (IXTH)
D (TAB)
T
C
= 25°C
External lead current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
,
T
J
≤ 150°C, R
G
= 4 Ω
T
C
= 25°C
88
75
220
60
60
2.0
10
600
-55 ... +150
150
-55 ... +150
TO-268 (IXTT)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
z
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-264
TO-268
300
1.13/10Nm/.
6
10
5
g
g
g
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
-easy to drive and to protect
Advantages
SymbolTest Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 VT
J
= 125°C
Characteristic Values
Min. .
300
2.55.0
±100
25
250
40
V
V
nA
µA
µA
mΩ
z
z
z
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99129A(01/04)
© 2004 IXYS All rights reserved
元器件交易网
IXTH 88N30P
IXTT 88N30P
SymbolTest Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
.
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
4050
6300
950
190
25
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
R
G
= 3.3 Ω (External)
24
96
25
180
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
44
90
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.21K/W
(TO-247)
(TO-264)
0.21
0.15
K/W
K/W
eter
.
A4.75.3
2.22.54A
1
A
2
2.22.6
b1.01.4
b
1
1.652.13
b
2
2.873.12
C.4.8
D20.8021.46
E15.7516.26
e5.205.72
L19.8120.32
L14.50
∅P3.553.65
Q5.896.40
R4.325.49
S6.15BSC
Inches
.
.185.209
.087.102
.059.098
.040.055
.065.084
.113.123
.016.031
.819.845
.610.640
0.2050.225
.780.800
.177
.140.144
0.2320.252
.170.216
242BSC
1 2 3
TO-247 AD Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
SymbolTest .
I
S
I
SM
V
SD
t
rr
Q
RM
V
GS
= 0 V
Repetitive
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
F
= 25 A
-di/dt = 100 A/µs
V
R
= 100 V
250
3.3
88
220
1.5
A
A
V
ns
µC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
元器件交易网
IXTH 88N30P
IXTT 88N30P
Fig. 1. Output Characteristics
@ 25
º
C
90
80
70
V
GS
= 10V
9V
8V
200
180
160
140
V
GS
= 10V
9V
8V
Fig. 2. Extended Output Characteristics
@ 25
º
C
I
D
-
A
m
p
e
r
e
s
I
D
-
A
m
p
e
r
e
s
60
50
40
30
20
10
5V
0
00.511.522.533.54
6V
7V
120
100
80
60
40
20
5V
0
61820
6V
7V
V
D S
- Volts
Fig. 3. Output Characteristics
@ 125
º
C
90
80
70
V
GS
= 10V
9V
8V
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50-250
V
GS
= 10V
V
D S
- Volts
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
I
D
-
A
m
p
e
r
e
s
60
50
40
30
20
10
0
7V
R
D
S
(
o
n
)
-
N
o
r
m
a
l
i
z
e
d
I
D
= 88A
I
D
= 44A
6V
5V
255
V
D S
- Volts
Fig. 5. R
DS(on)
Normalized to
3.4
3.2
3
2.8
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
120
T
J
= 25ºC
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
100
90
80
0.5 I
D25
Value vs. I
D
V
GS
= 10V
R
D
S
(
o
n
)
-
N
o
r
m
a
l
i
z
e
d
I
D
-
A
m
p
e
r
e
s
2.6
T
J
= 125ºC
70
60
50
40
30
20
10
0
-50-255150
I
D
- AmperesT
C
- Degrees Centigrade
© 2004 IXYS All rights reserved
元器件交易网
IXTH 88N30P
IXTT 88N30P
Fig. 7. Input Admittance
160
140
120
100
80
60
40
20
0
44.555.566.577.58
T
J
= 125ºC
25ºC
-40ºC
100
90
80
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Transconductance
g
f
s
-
S
i
e
m
e
n
s
70
60
50
40
30
20
10
0
0
I
D
-
A
m
p
e
r
e
s
2
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
280
240
200
10
9
8
V
DS
= 150V
I
D
= 44A
I
G
= 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
-
A
m
p
e
r
e
s
7
V
G
S
-
V
o
l
t
s
T
J
= 125ºC
T
J
= 25ºC
160
120
80
40
0
0.40.60.811.21.41.6
6
5
4
3
2
1
0
12
V
S D
- Volts
Q
G
- nanoCoulombs
Fig. 12. Forward-Bias
Safe Operating Area
1000
T
J
= 150ºC
R
DS(on)
Limit
T
C
= 25ºC
25µs
Fig. 11. Capacitance
10000
C
a
p
a
c
i
t
a
n
c
e
-
p
i
c
o
F
a
r
a
d
s
C
iss
I
D
-
A
m
p
e
r
e
s
100
1ms
10ms
10
DC
100µs
1000
C
oss
f = 1MHz
C
rss
100
3540
1
101001000
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V
D S
- Volts
元器件交易网
IXTH 88N30P
IXTT 88N30P
Fig. 13. Maximum Transient Thermal Resistance
1.00
R
(
t
h
)
J
C
-
º
C
/
W
0.10
0.01
1101001000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
2024年10月23日发(作者：碧鲁元思)
元器件交易网
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXTH 88N30P
IXTT 88N30P
R
DS(on)
V
DSS
= 300 V
I
D25
= 88 A
= 40 m
Ω
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Maximum Ratings
300
300
±20
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
TO-247 (IXTH)
D (TAB)
T
C
= 25°C
External lead current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
,
T
J
≤ 150°C, R
G
= 4 Ω
T
C
= 25°C
88
75
220
60
60
2.0
10
600
-55 ... +150
150
-55 ... +150
TO-268 (IXTT)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
z
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-264
TO-268
300
1.13/10Nm/.
6
10
5
g
g
g
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
-easy to drive and to protect
Advantages
SymbolTest Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 VT
J
= 125°C
Characteristic Values
Min. .
300
2.55.0
±100
25
250
40
V
V
nA
µA
µA
mΩ
z
z
z
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99129A(01/04)
© 2004 IXYS All rights reserved
元器件交易网
IXTH 88N30P
IXTT 88N30P
SymbolTest Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
.
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
4050
6300
950
190
25
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
R
G
= 3.3 Ω (External)
24
96
25
180
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
44
90
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.21K/W
(TO-247)
(TO-264)
0.21
0.15
K/W
K/W
eter
.
A4.75.3
2.22.54A
1
A
2
2.22.6
b1.01.4
b
1
1.652.13
b
2
2.873.12
C.4.8
D20.8021.46
E15.7516.26
e5.205.72
L19.8120.32
L14.50
∅P3.553.65
Q5.896.40
R4.325.49
S6.15BSC
Inches
.
.185.209
.087.102
.059.098
.040.055
.065.084
.113.123
.016.031
.819.845
.610.640
0.2050.225
.780.800
.177
.140.144
0.2320.252
.170.216
242BSC
1 2 3
TO-247 AD Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
SymbolTest .
I
S
I
SM
V
SD
t
rr
Q
RM
V
GS
= 0 V
Repetitive
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
F
= 25 A
-di/dt = 100 A/µs
V
R
= 100 V
250
3.3
88
220
1.5
A
A
V
ns
µC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
元器件交易网
IXTH 88N30P
IXTT 88N30P
Fig. 1. Output Characteristics
@ 25
º
C
90
80
70
V
GS
= 10V
9V
8V
200
180
160
140
V
GS
= 10V
9V
8V
Fig. 2. Extended Output Characteristics
@ 25
º
C
I
D
-
A
m
p
e
r
e
s
I
D
-
A
m
p
e
r
e
s
60
50
40
30
20
10
5V
0
00.511.522.533.54
6V
7V
120
100
80
60
40
20
5V
0
61820
6V
7V
V
D S
- Volts
Fig. 3. Output Characteristics
@ 125
º
C
90
80
70
V
GS
= 10V
9V
8V
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50-250
V
GS
= 10V
V
D S
- Volts
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
I
D
-
A
m
p
e
r
e
s
60
50
40
30
20
10
0
7V
R
D
S
(
o
n
)
-
N
o
r
m
a
l
i
z
e
d
I
D
= 88A
I
D
= 44A
6V
5V
255
V
D S
- Volts
Fig. 5. R
DS(on)
Normalized to
3.4
3.2
3
2.8
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
120
T
J
= 25ºC
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
100
90
80
0.5 I
D25
Value vs. I
D
V
GS
= 10V
R
D
S
(
o
n
)
-
N
o
r
m
a
l
i
z
e
d
I
D
-
A
m
p
e
r
e
s
2.6
T
J
= 125ºC
70
60
50
40
30
20
10
0
-50-255150
I
D
- AmperesT
C
- Degrees Centigrade
© 2004 IXYS All rights reserved
元器件交易网
IXTH 88N30P
IXTT 88N30P
Fig. 7. Input Admittance
160
140
120
100
80
60
40
20
0
44.555.566.577.58
T
J
= 125ºC
25ºC
-40ºC
100
90
80
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Transconductance
g
f
s
-
S
i
e
m
e
n
s
70
60
50
40
30
20
10
0
0
I
D
-
A
m
p
e
r
e
s
2
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
280
240
200
10
9
8
V
DS
= 150V
I
D
= 44A
I
G
= 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
-
A
m
p
e
r
e
s
7
V
G
S
-
V
o
l
t
s
T
J
= 125ºC
T
J
= 25ºC
160
120
80
40
0
0.40.60.811.21.41.6
6
5
4
3
2
1
0
12
V
S D
- Volts
Q
G
- nanoCoulombs
Fig. 12. Forward-Bias
Safe Operating Area
1000
T
J
= 150ºC
R
DS(on)
Limit
T
C
= 25ºC
25µs
Fig. 11. Capacitance
10000
C
a
p
a
c
i
t
a
n
c
e
-
p
i
c
o
F
a
r
a
d
s
C
iss
I
D
-
A
m
p
e
r
e
s
100
1ms
10ms
10
DC
100µs
1000
C
oss
f = 1MHz
C
rss
100
3540
1
101001000
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V
D S
- Volts
元器件交易网
IXTH 88N30P
IXTT 88N30P
Fig. 13. Maximum Transient Thermal Resistance
1.00
R
(
t
h
)
J
C
-
º
C
/
W
0.10
0.01
1101001000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved