2024年9月24日发(作者：鲍梅雪)
元器件交易网
元器件交易网
MATCHING CHARACTERISTICS
SYMBOLCHARACTERISTICS
Base Emitter Voltage Differential
|V
BE1
-V
BE2
|
∆|(V
BE1
-V
BE2
)|/°C
|I
B1
- I
B2
|
|∆(I
B1
- I
B2
)|/°C
h
FE1
/h
FE2
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
Base Current Differential
Change with Temperature
DC Current Gain Differential1055TYP.%
LS350
1
5
2
20
LS351
0.4
1.0
1
10
5
0.5
LS352
0.2
0.5
0.5
2
5
0.3
UNITS
TYP.
MAX.
MAX.
MAX.
µV/°C
µV/°C
nA
nA/°C
CONDITIONS
I
C
= 10 µA
I
C
=
10 µA
I = 10µA
C
C
V
CE
= 5V
V
CE
= 5V
V
V
V
= 5V
= 5V
= 5V
T
A
= -55°C to +125°C
CE
CE
I= 10 µA,
I = 10µA
C
T
A
= -55°C to +125°C
CE
TO-71
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.115
TO-78
0.305
0.335
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.029
0.045
2
3
4
15
8
7
6
P-DIP
0.320
(8.13)
0.290
(7.37)
MAX.
0.040
0.165
0.185
MIN. 0.500
SEATING
PLANE
0.335
0.370
0.405
(10.29)
MAX.
6 LEADS
0.019
DIA.
0.016
0.100
0.500 MIN.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.200
0.100
0.050
2
3
4
1
8
5
6
SOIC
0.100
0.150
(3.81)
0.158
(4.01)
C1
0.188
(4.78)
B1
0.197
(5.00)
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
45°
0.046
0.036
7
45°
0.048
0.028
0.028
0.034
0.228
(5.79)
0.244
(6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. For LS350: V
CB
= 20V; for LS351 & LS352: V
CB
= 30V.
4. For LS351: V
CC
= ±45V; for LS352: V
CC
= ±80V; for LS350: V
CC
= ±25V.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
2024年9月24日发(作者：鲍梅雪)
元器件交易网
元器件交易网
MATCHING CHARACTERISTICS
SYMBOLCHARACTERISTICS
Base Emitter Voltage Differential
|V
BE1
-V
BE2
|
∆|(V
BE1
-V
BE2
)|/°C
|I
B1
- I
B2
|
|∆(I
B1
- I
B2
)|/°C
h
FE1
/h
FE2
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
Base Current Differential
Change with Temperature
DC Current Gain Differential1055TYP.%
LS350
1
5
2
20
LS351
0.4
1.0
1
10
5
0.5
LS352
0.2
0.5
0.5
2
5
0.3
UNITS
TYP.
MAX.
MAX.
MAX.
µV/°C
µV/°C
nA
nA/°C
CONDITIONS
I
C
= 10 µA
I
C
=
10 µA
I = 10µA
C
C
V
CE
= 5V
V
CE
= 5V
V
V
V
= 5V
= 5V
= 5V
T
A
= -55°C to +125°C
CE
CE
I= 10 µA,
I = 10µA
C
T
A
= -55°C to +125°C
CE
TO-71
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.115
TO-78
0.305
0.335
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.029
0.045
2
3
4
15
8
7
6
P-DIP
0.320
(8.13)
0.290
(7.37)
MAX.
0.040
0.165
0.185
MIN. 0.500
SEATING
PLANE
0.335
0.370
0.405
(10.29)
MAX.
6 LEADS
0.019
DIA.
0.016
0.100
0.500 MIN.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.200
0.100
0.050
2
3
4
1
8
5
6
SOIC
0.100
0.150
(3.81)
0.158
(4.01)
C1
0.188
(4.78)
B1
0.197
(5.00)
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
45°
0.046
0.036
7
45°
0.048
0.028
0.028
0.034
0.228
(5.79)
0.244
(6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. For LS350: V
CB
= 20V; for LS351 & LS352: V
CB
= 30V.
4. For LS351: V
CC
= ±45V; for LS352: V
CC
= ±80V; for LS350: V
CC
= ±25V.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261