2024年6月3日发(作者：焉宛菡)
1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
•
•
•
•
•
•
Extremely Low V
F
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Shipped in plastic bags, 500 per bag
Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to
the part number
Pb−Free Packages are Available*
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 1.1 Gram (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
MARKING DIAGRAM
A
1N
582x
YYWWG
G
A= Assembly Location
1N582x= Device Code
x= 0, 1, or 2
YY= Year
WW= Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 9
Publication Order Number:
1N5820/D
1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non−Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (Note 1)
V
R(equiv)
v 0.2 V
R(dc)
, T
L
= 95°C
(R
q
JA
= 28°C/W, P.C. Board Mounting, see Note 5)
Ambient Temperature
Rated V
R(dc)
, P
F(AV)
= 0
R
q
JA
= 28°C/W
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T
L
= 75°C)
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
Symbol
V
RRM
V
RWM
V
R
V
RSM
V
R(RMS)
I
O
1N5820
20
1N5821
30
1N5822
40
Unit
V
24
14
36
21
3.0
48
28
V
V
A
T
A
908580°C
I
FSM
80 (for one cycle)A
T
J
, T
stg
65 to +125°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*THERMAL CHARACTERISTICS
(Note 5)
Characteristic
Thermal Resistance, Junction−to−Ambient
Symbol
R
q
JA
Max
28
Unit
°C/W
*ELECTRICAL CHARACTERISTICS
(T
L
= 25°C unless otherwise noted) (Note 1)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 Amp)
(i
F
= 3.0 Amp)
(i
F
= 9.4 Amp)
Maximum Instantaneous Reverse Current
@ Rated dc Voltage (Note 2)
T
L
= 25°C
T
L
= 100°C
Temperature reference is cathode lead 1/32″ from case.
Test: Pulse Width = 300 ms, Duty Cycle =2.0%.
*Indicates JEDEC Registered Data for 1N5820−22.
Symbol
V
F
0.370
0.475
0.850
i
R
2.0
20
2.0
20
2.0
20
0.380
0.500
0.900
0.390
0.525
0.950
mA
1N58201N58211N5822Unit
V
2
2024年6月3日发(作者：焉宛菡)
1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
•
•
•
•
•
•
Extremely Low V
F
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Shipped in plastic bags, 500 per bag
Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to
the part number
Pb−Free Packages are Available*
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 1.1 Gram (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
MARKING DIAGRAM
A
1N
582x
YYWWG
G
A= Assembly Location
1N582x= Device Code
x= 0, 1, or 2
YY= Year
WW= Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 9
Publication Order Number:
1N5820/D
1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non−Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (Note 1)
V
R(equiv)
v 0.2 V
R(dc)
, T
L
= 95°C
(R
q
JA
= 28°C/W, P.C. Board Mounting, see Note 5)
Ambient Temperature
Rated V
R(dc)
, P
F(AV)
= 0
R
q
JA
= 28°C/W
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T
L
= 75°C)
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
Symbol
V
RRM
V
RWM
V
R
V
RSM
V
R(RMS)
I
O
1N5820
20
1N5821
30
1N5822
40
Unit
V
24
14
36
21
3.0
48
28
V
V
A
T
A
908580°C
I
FSM
80 (for one cycle)A
T
J
, T
stg
65 to +125°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*THERMAL CHARACTERISTICS
(Note 5)
Characteristic
Thermal Resistance, Junction−to−Ambient
Symbol
R
q
JA
Max
28
Unit
°C/W
*ELECTRICAL CHARACTERISTICS
(T
L
= 25°C unless otherwise noted) (Note 1)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 Amp)
(i
F
= 3.0 Amp)
(i
F
= 9.4 Amp)
Maximum Instantaneous Reverse Current
@ Rated dc Voltage (Note 2)
T
L
= 25°C
T
L
= 100°C
Temperature reference is cathode lead 1/32″ from case.
Test: Pulse Width = 300 ms, Duty Cycle =2.0%.
*Indicates JEDEC Registered Data for 1N5820−22.
Symbol
V
F
0.370
0.475
0.850
i
R
2.0
20
2.0
20
2.0
20
0.380
0.500
0.900
0.390
0.525
0.950
mA
1N58201N58211N5822Unit
V
2