2024年7月15日发(作者：戈依波)
元器件交易网
HiPerFET
TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
IXFK27N80Q
IXFR27N80Q
IXFX27N80Q
V
DSS
I
D25
R
DS(on)
= 800V
=27A
= 300 mW
t
rr
£ 250 ns
PLUS 247
TM
(IXFX)
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dV/dt, Low t
rr
G
(TAB)
D
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
T
J
£ 150°C, R
G
= 2 W
T
C
= 25°C
Maximum Ratings
800
800
±20
±30
27
108
27
60
2.5
5
500
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
TO-264 AA (IXFK)
G
D
S
(TAB)
ISOPLUS 247
TM
(IXFR)
E153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in.) from case for 10 s
Mounting torqueTO-264
PLUS 247/ISOPLUS 247
TO-264
0.4/6
300
Nm/.
6 g
10 g
Features
•IXYS advanced low Q
g
process
•Low gate charge and capacitances
- easier to drive
- faster switching
•International standard packages
•Low R
DS (on)
•Rated for unclamped Inductive load
switching (UIS) rated
•Molding epoxies meet UL 94 V-0
flammability classification
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•AC motor control
•Temperature and lighting controls
Advantages
•PLUS 247
TM
package for clip or spring
mounting
•Space savings
•High power density
98722 (05/22/00)
SymbolTest ConditionsCharacteristic Values
(T
J
= 25°C, unless otherwise specified)
.
800
2.0
V
4.5 V
±100 nA
100 mA
2mA
300 mW
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 4mA
V
GS
= ±20 V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Note 1
T
J
= 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1 - 2
元器件交易网
IXFK 27N80Q
SymbolTest Conditions
IXFR 27N80QIXFX 27N80Q
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
.
Note 12027
7600
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.26
0.15
K/W
K/W
TO-264 AA (IXFK) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz750
120
20
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1 W (External),
28
50
13
170
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
.
4.825.13
2.542.89
2.002.10
1.121.42
2.392.69
2.903.09
0.530.83
25.9126.16
19.8119.96
5.46 BSC
0.000.25
0.000.25
20.3220.83
2.292.59
3.173.66
6.076.27
8.388.69
3.814.32
1.782.29
6.046.30
1.571.83
Inches
.
.190.202
.100.114
.079.083
.044.056
.094.106
.114.122
.021.033
1.0201.030
.780.786
.215 BSC
.000.010
.000.010
.800.820
.090.102
.125.144
.239.247
.330.342
.150.170
.070.090
.238.248
.062.072
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
47
65
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Note:
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V, Note 1
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
.
27
108
1.5
250
A
A
V
ns
mC
A
PLUS247
TM
(IXFX) Outline
I
F
= I
S
,-di/dt = 100 A/ms, V
R
= 100 V
1.3
8
1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
eter
.
A4.835.21
A
1
2.292.54
A
2
1.912.16
b1.141.40
b
1
1.912.13
b
2
2.923.12
C0.610.80
D20.8021.34
E15.7516.13
e 5.45 BSC
L19.8120.32
L13.814.32
Q5.596.20
R4.324.83
S13.2113.72
T15.7516.26
U1.653.03
Inches
.
.190.205
.090.100
.075.085
.045.055
.075.084
.115.123
.024.031
.819.840
.620.635
.215 BSC
.780.800
.150.170
.220.244
.170.190
.520.540
.620.640
.065.080
ISOPLUS 247 (IXFR) OUTLINE
Dim.
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Millimeter
.
A4.835.21
A
1
2.292.54
A
2
1.912.16
b1.141.40
b
1
1.912.13
2.923.12b
2
C0.610.80
D20.8021.34
E15.7516.13
e 5.45 BSC
L19.8120.32
L13.814.32
Q5.596.20
R4.324.83
Inches
.
.190.205
.090.100
.075.085
.045.055
.075.084
.115.123
.024.031
.819.840
.620.635
.215 BSC
.780.800
.150.170
.220.244
.170.190
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,5924,881,1065,017,5085,049,9615,187,1175,486,715
4,850,0724,931,8445,034,7965,063,3075,237,4815,381,025
2 - 2
2024年7月15日发(作者：戈依波)
元器件交易网
HiPerFET
TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
IXFK27N80Q
IXFR27N80Q
IXFX27N80Q
V
DSS
I
D25
R
DS(on)
= 800V
=27A
= 300 mW
t
rr
£ 250 ns
PLUS 247
TM
(IXFX)
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dV/dt, Low t
rr
G
(TAB)
D
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
T
J
£ 150°C, R
G
= 2 W
T
C
= 25°C
Maximum Ratings
800
800
±20
±30
27
108
27
60
2.5
5
500
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
TO-264 AA (IXFK)
G
D
S
(TAB)
ISOPLUS 247
TM
(IXFR)
E153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in.) from case for 10 s
Mounting torqueTO-264
PLUS 247/ISOPLUS 247
TO-264
0.4/6
300
Nm/.
6 g
10 g
Features
•IXYS advanced low Q
g
process
•Low gate charge and capacitances
- easier to drive
- faster switching
•International standard packages
•Low R
DS (on)
•Rated for unclamped Inductive load
switching (UIS) rated
•Molding epoxies meet UL 94 V-0
flammability classification
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•AC motor control
•Temperature and lighting controls
Advantages
•PLUS 247
TM
package for clip or spring
mounting
•Space savings
•High power density
98722 (05/22/00)
SymbolTest ConditionsCharacteristic Values
(T
J
= 25°C, unless otherwise specified)
.
800
2.0
V
4.5 V
±100 nA
100 mA
2mA
300 mW
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 4mA
V
GS
= ±20 V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Note 1
T
J
= 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1 - 2
元器件交易网
IXFK 27N80Q
SymbolTest Conditions
IXFR 27N80QIXFX 27N80Q
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
.
Note 12027
7600
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.26
0.15
K/W
K/W
TO-264 AA (IXFK) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz750
120
20
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1 W (External),
28
50
13
170
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
.
4.825.13
2.542.89
2.002.10
1.121.42
2.392.69
2.903.09
0.530.83
25.9126.16
19.8119.96
5.46 BSC
0.000.25
0.000.25
20.3220.83
2.292.59
3.173.66
6.076.27
8.388.69
3.814.32
1.782.29
6.046.30
1.571.83
Inches
.
.190.202
.100.114
.079.083
.044.056
.094.106
.114.122
.021.033
1.0201.030
.780.786
.215 BSC
.000.010
.000.010
.800.820
.090.102
.125.144
.239.247
.330.342
.150.170
.070.090
.238.248
.062.072
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
47
65
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Note:
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V, Note 1
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
.
27
108
1.5
250
A
A
V
ns
mC
A
PLUS247
TM
(IXFX) Outline
I
F
= I
S
,-di/dt = 100 A/ms, V
R
= 100 V
1.3
8
1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
eter
.
A4.835.21
A
1
2.292.54
A
2
1.912.16
b1.141.40
b
1
1.912.13
b
2
2.923.12
C0.610.80
D20.8021.34
E15.7516.13
e 5.45 BSC
L19.8120.32
L13.814.32
Q5.596.20
R4.324.83
S13.2113.72
T15.7516.26
U1.653.03
Inches
.
.190.205
.090.100
.075.085
.045.055
.075.084
.115.123
.024.031
.819.840
.620.635
.215 BSC
.780.800
.150.170
.220.244
.170.190
.520.540
.620.640
.065.080
ISOPLUS 247 (IXFR) OUTLINE
Dim.
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Millimeter
.
A4.835.21
A
1
2.292.54
A
2
1.912.16
b1.141.40
b
1
1.912.13
2.923.12b
2
C0.610.80
D20.8021.34
E15.7516.13
e 5.45 BSC
L19.8120.32
L13.814.32
Q5.596.20
R4.324.83
Inches
.
.190.205
.090.100
.075.085
.045.055
.075.084
.115.123
.024.031
.819.840
.620.635
.215 BSC
.780.800
.150.170
.220.244
.170.190
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,5924,881,1065,017,5085,049,9615,187,1175,486,715
4,850,0724,931,8445,034,7965,063,3075,237,4815,381,025
2 - 2