2024年9月2日发(作者：达昊英)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
1. EMITTER
TO – 92L
KSC2328A
TRANSISTOR (NPN)
FEATURES
z Complement to KSA928A
z High DC Current Gain
=
=
=
=
=
=
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
30
30
5
2
0.75
167
150
-55~+150
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE
Test conditions Min Typ Max Unit
V I
C
= 100µA,I
E
0 30
I
C
=10mA,I
B
0 30 V
I
E
=1mA,I
C
0 5 V
V
CB
=30V,I
E
0 0.1 μA
V
EB
=5V,I
C
0 0.1 μA
V
CE
=2V, I
C
500mA 100 320
V
(BR)EBO
V
CE(sat)
V
BE
C
ob
f
T
I
C
=1.5A,I
B
=0.03A
2 V
V
CE
=2V, I
C
=500mA
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=2V,I
C
=500mA
1 V
30 pF
MHz
120
CLASSIFICATION OF h
FE
RANK O
RANGE
Y
100-200 160-320
B,Jun,2012
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Typical Characteristics
KSC2328A
Static Characteristic
1400
COMMON
5.0mA
EMITTER
)
A
1200
4.5mA
T
a
=25
℃
m
4.0mA
(
C
I
1000
3.5mA
T
N
3.0mA
E
R
800
R
U
2.5mA
C
R
600
O
2.0mA
T
C
E
L
400
1.5mA
L
O
C
1.0mA
200
I
B
=0.5mA
0
0123456
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
1.2
BEsat
——
I
C
β=50
1.0
N
O
I
T
)
A
V
R
(
U
0.8
t
T
a
T
s
a
=25
℃
A
E
B
S
V
R
E
T
E
0.6
T
G
I
M
A
T
E
L
-
E
O
S
V
0.4
T
℃
A
a
=100
B
0.2
0.0
1101001000
2000
COLLECTOR CURRENT I
C
(mA)
f
300
T
——
I
C
)
z
H
M
250
(
T
f
Y
200
C
N
E
U
Q
150
E
R
F
N
O
I
100
T
I
S
N
A
R
T
50
V
CE
=2V
T
a
=25
o
C
0
COLLECTOR CURRENT I
C
(mA)
V
BE
—— I
C
2000
1000
A
)
m
(
C
o
I
100
Ta=100 C
T
N
E
R
R
U
C
10
R
O
T
C
Ta=25
℃
E
L
L
O
1
C
VCE=2V
0.1
0.20.30.40.50.60.70.80.91.01.11.2
BASE-EMITTER VOLTAGE V
BE
(V)
h
FE
——
I
1000
C
V
CE
= 2V
T
a
=100
o
C
E
F
h
N
I
A
G
T
T
o
a
=25 C
N
E
R
100
R
U
C
C
D
10
1101001000
2000
COLLECTOR CURRENT I
C
(mA)
V
CEsat
—— I
C
400
N
O
β=50
I
T
A
R
)
U
V
T
m
A
(
300
S
t
a
R
s
E
E
C
T
V
T
I
M
E
E
G
-
R
A
200
O
T
L
T
C
O
E
V
L
L
O
C
100
T
a
=100
℃
T
a
=25
℃
0
1101001000
2000
COLLECTOR CURRENT I
C
(mA)
C
ob
/ C
ib
——
V
1000
CB
/ V
EB
f=1MHz
I
E
=0 / I
C
=0
T
o
)
a
=25 C
F
p
(
C
100
E
C
C
N
ib
A
T
I
C
A
P
A
C
10
C
ob
1
0.1110
20
REVERSE VOLTAGE V (V)
P
1.00
c
—— T
a
N
O
I
T
A
P
I
S
0.75
S
I
D
)
R
W
(
E
W
c
O
P
P
R
0.50
O
T
C
E
L
L
O
C
0.25
0.00
5150
AMBIENT TEMPERATURE T
a
(
℃
)
B,Jun,2012
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
b
b1
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
.
3.7004.100
1.2801.580
0.3500.550
0.6000.800
0.3500.450
4.7005.100
4.000
7.8008.200
1.270 TYP.
2.4402.640
13.80014.200
1.600
0.0000.300
Dimensions In Inches
.
0.1460.161
0.0500.062
0.0140.022
0.0240.031
0.0140.018
0.1850.201
0.157
0.3070.323
0.050 TYP.
0.0960.104
0.5430.559
0.063
0.0000.012
【
南京南山半导体有限公司 — 长电三极管选型资料
】
【
南京南山半导体有限公司 — 长电三极管选型资料
】
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Item
Body width
Body height
Body thickness
Lead wire diameter
Lead wire diameter1
Pitch of component
Feed hole pitch
Hole center to component center
Lead to lead distance
Comp
onent alignment, F-R
Type width
Hole down tape width
Hole p
osition
Hole down tap
e position
Height of component from tape center
Lead wire clinch heig
ht
Lead wire(tape portion)
Feed hole diameter
Taped Lead Thickness
Carrier Tape Thickness
Position of hole
Component alignment
Symbol
A1
A
T
d
d1
P
P0
P2
F1,F2
△
h
W
W0
W1
W2
H
H0
L1
D0
t1
t2
P1
△
P
Value & Tolerance
4.9 ± 0.2
8.0 ± 0.2
3.9 ± 0.2
0.45 ± 0.05
0.70 ± 0.08
12.7 ± 0.3
12.7 ± 0.2
6.35 ± 0.3
2.5 ± 0.3
0 ± 1.0
18.0 + 1.0, - 0.5
6.0 ± 0.5
9.0 ± 0.5
1.0 MAX.
19.0 +2.0, -0
16.0 ± 0.5
2.5 MIN.
4.0 ± 0.2
0.4 ± 0.05
0.2 ± 0.05
3.85 ± 0.3
0 ± 1.0
Unit : mm
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Sponge strip
Sponge strip
2000 pcs
The top gasket
Label on the Inner Box
Inner Box:
333 mm×203mm×42mm
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
QA Label
Outer Box:
493 mm× 400mm× 264mm
Label on the Outer Box
The top gasket
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Inner Box:
240 mm×165mm×９５mm
Label on the Inner Box
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
QA Label
Outer Box:
525 mm× 360mm× 262mm
Label on the Outer Box
2024年9月2日发(作者：达昊英)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
1. EMITTER
TO – 92L
KSC2328A
TRANSISTOR (NPN)
FEATURES
z Complement to KSA928A
z High DC Current Gain
=
=
=
=
=
=
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
30
30
5
2
0.75
167
150
-55~+150
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE
Test conditions Min Typ Max Unit
V I
C
= 100µA,I
E
0 30
I
C
=10mA,I
B
0 30 V
I
E
=1mA,I
C
0 5 V
V
CB
=30V,I
E
0 0.1 μA
V
EB
=5V,I
C
0 0.1 μA
V
CE
=2V, I
C
500mA 100 320
V
(BR)EBO
V
CE(sat)
V
BE
C
ob
f
T
I
C
=1.5A,I
B
=0.03A
2 V
V
CE
=2V, I
C
=500mA
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=2V,I
C
=500mA
1 V
30 pF
MHz
120
CLASSIFICATION OF h
FE
RANK O
RANGE
Y
100-200 160-320
B,Jun,2012
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Typical Characteristics
KSC2328A
Static Characteristic
1400
COMMON
5.0mA
EMITTER
)
A
1200
4.5mA
T
a
=25
℃
m
4.0mA
(
C
I
1000
3.5mA
T
N
3.0mA
E
R
800
R
U
2.5mA
C
R
600
O
2.0mA
T
C
E
L
400
1.5mA
L
O
C
1.0mA
200
I
B
=0.5mA
0
0123456
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
1.2
BEsat
——
I
C
β=50
1.0
N
O
I
T
)
A
V
R
(
U
0.8
t
T
a
T
s
a
=25
℃
A
E
B
S
V
R
E
T
E
0.6
T
G
I
M
A
T
E
L
-
E
O
S
V
0.4
T
℃
A
a
=100
B
0.2
0.0
1101001000
2000
COLLECTOR CURRENT I
C
(mA)
f
300
T
——
I
C
)
z
H
M
250
(
T
f
Y
200
C
N
E
U
Q
150
E
R
F
N
O
I
100
T
I
S
N
A
R
T
50
V
CE
=2V
T
a
=25
o
C
0
COLLECTOR CURRENT I
C
(mA)
V
BE
—— I
C
2000
1000
A
)
m
(
C
o
I
100
Ta=100 C
T
N
E
R
R
U
C
10
R
O
T
C
Ta=25
℃
E
L
L
O
1
C
VCE=2V
0.1
0.20.30.40.50.60.70.80.91.01.11.2
BASE-EMITTER VOLTAGE V
BE
(V)
h
FE
——
I
1000
C
V
CE
= 2V
T
a
=100
o
C
E
F
h
N
I
A
G
T
T
o
a
=25 C
N
E
R
100
R
U
C
C
D
10
1101001000
2000
COLLECTOR CURRENT I
C
(mA)
V
CEsat
—— I
C
400
N
O
β=50
I
T
A
R
)
U
V
T
m
A
(
300
S
t
a
R
s
E
E
C
T
V
T
I
M
E
E
G
-
R
A
200
O
T
L
T
C
O
E
V
L
L
O
C
100
T
a
=100
℃
T
a
=25
℃
0
1101001000
2000
COLLECTOR CURRENT I
C
(mA)
C
ob
/ C
ib
——
V
1000
CB
/ V
EB
f=1MHz
I
E
=0 / I
C
=0
T
o
)
a
=25 C
F
p
(
C
100
E
C
C
N
ib
A
T
I
C
A
P
A
C
10
C
ob
1
0.1110
20
REVERSE VOLTAGE V (V)
P
1.00
c
—— T
a
N
O
I
T
A
P
I
S
0.75
S
I
D
)
R
W
(
E
W
c
O
P
P
R
0.50
O
T
C
E
L
L
O
C
0.25
0.00
5150
AMBIENT TEMPERATURE T
a
(
℃
)
B,Jun,2012
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
b
b1
c
D
D1
E
e
e1
L
Φ
h
Dimensions In Millimeters
.
3.7004.100
1.2801.580
0.3500.550
0.6000.800
0.3500.450
4.7005.100
4.000
7.8008.200
1.270 TYP.
2.4402.640
13.80014.200
1.600
0.0000.300
Dimensions In Inches
.
0.1460.161
0.0500.062
0.0140.022
0.0240.031
0.0140.018
0.1850.201
0.157
0.3070.323
0.050 TYP.
0.0960.104
0.5430.559
0.063
0.0000.012
【
南京南山半导体有限公司 — 长电三极管选型资料
】
【
南京南山半导体有限公司 — 长电三极管选型资料
】
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Item
Body width
Body height
Body thickness
Lead wire diameter
Lead wire diameter1
Pitch of component
Feed hole pitch
Hole center to component center
Lead to lead distance
Comp
onent alignment, F-R
Type width
Hole down tape width
Hole p
osition
Hole down tap
e position
Height of component from tape center
Lead wire clinch heig
ht
Lead wire(tape portion)
Feed hole diameter
Taped Lead Thickness
Carrier Tape Thickness
Position of hole
Component alignment
Symbol
A1
A
T
d
d1
P
P0
P2
F1,F2
△
h
W
W0
W1
W2
H
H0
L1
D0
t1
t2
P1
△
P
Value & Tolerance
4.9 ± 0.2
8.0 ± 0.2
3.9 ± 0.2
0.45 ± 0.05
0.70 ± 0.08
12.7 ± 0.3
12.7 ± 0.2
6.35 ± 0.3
2.5 ± 0.3
0 ± 1.0
18.0 + 1.0, - 0.5
6.0 ± 0.5
9.0 ± 0.5
1.0 MAX.
19.0 +2.0, -0
16.0 ± 0.5
2.5 MIN.
4.0 ± 0.2
0.4 ± 0.05
0.2 ± 0.05
3.85 ± 0.3
0 ± 1.0
Unit : mm
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Sponge strip
Sponge strip
2000 pcs
The top gasket
Label on the Inner Box
Inner Box:
333 mm×203mm×42mm
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
QA Label
Outer Box:
493 mm× 400mm× 264mm
Label on the Outer Box
The top gasket
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Inner Box:
240 mm×165mm×９５mm
Label on the Inner Box
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
QA Label
Outer Box:
525 mm× 360mm× 262mm
Label on the Outer Box