2024年10月24日发(作者：善女)
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
T
j
=25°C
T
j
=175°C
T
c
=25°C
T
c
=100°C
1700
1300
850
1000
2000
V
CC
=1000V
V
GE
≤ 15V
V
CES
≤ 1700 V
-20...20
T
j
=150°C
10
-40...175
1700
T
c
=25°C
T
c
=100°C
1427
890
2000
t
p
=10ms, sin 180°, T
j
=25°C
6240
-40...175
1000
-40...150
AC sinus 50 Hz, t=1min4000
V
A
A
A
A
V
µs
°C
V
A
A
A
A
°C
A
°C
V
ConditionsValuesUnit
SEMITRANS 10
IGBT4 Modules
SKM1000GB17E4
Features*
•
•
•
•
Symmetrical current sharing
Low-inductive module design
High mechanical robustness
UL recognized, file no. E63532
®
V
GES
t
psc
T
j
V
RRM
I
F
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Inverse diode
T
j
=25°C
T
j
=175°C
Typical Applications
•Motor Drives
•UPS Systems
•Solar Inverters
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
R
th(c-s)
R
th(c-s)
Remarks
Recommended T
jop
= -40 ... +150°C
I
DC
≤ 1000A for T
Terminal
= 100°C
Conditions
I
C
=1000A
V
GE
=15V
chiplevel
chiplevel
V
GE
=15V
chiplevel
T
j
=25°C
T
j
=150°C
T
j
=25°C
T
j
=150°C
T
j
=25°C
T
j
=150°C
.
1.99
2.44
1.10
1.00
0.89
1.44
max.
2.31
2.77
1.20
1.10
1.11
1.67
6.4
5
Unit
V
V
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
V
GE
=V
CE
, I
C
=36mA
V
GE
=0V,V
CE
=1700V, T
j
=25°C
V
CE
=25V
V
GE
=0V
V
GE
=+15V / -15 V
T
j
=25°C
V
CC
=900V
I
C
=1000A
V
GE
=+15/-15V
R
G on
=1.2Ω
R
G off
=1.2Ω
di/dt
on
=8.2kA/µs
di/dt
off
=4.7kA/µs
dv/dt=3800V/µs
L
s
=25nH
per IGBT
T
j
=150°C
T
j
=150°C
T
j
=150°C
T
j
=150°C
T
j
=150°C
T
j
=150°C
f=1MHz
f=1MHz
f=1MHz
5.25.8
70.8
2.58
2.28
7200
1.5
730
115
450
990
175
370
0.034
0.016
0.013
K/W
K/W
K/W
per IGBT (λ
grease
=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
GB
© by SEMIKRONRev. 1.0–26.05.20221
Characteristics
SymbolConditions
T
j
=25°C
T
j
=150°C
T
j
=25°C
T
j
=150°C
T
j
=25°C
T
j
=150°C
T
j
=150°C
T
j
=150°C
T
j
=150°C
.
1.78
1.81
1.32
1.08
0.46
0.73
800
360
200
max.
2.12
2.14
1.56
1.22
0.56
0.92
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
=1000A
V
GE
=0V
chiplevel
V
F0
chiplevel
r
F
chiplevel
I
F
=1000A
di/dt
off
=8.38kA/
µs
V
GE
=-15V
V
CC
=900V
per diode
SEMITRANS
®
10
IGBT4 Modules
SKM1000GB17E4
Features*
•
•
•
•
Symmetrical current sharing
Low-inductive module design
High mechanical robustness
UL recognized, file no. E63532
I
RRM
Q
rr
E
rr
R
th(j-c)
R
th(c-s)
R
th(c-s)
Module
L
CE
R
CC'+EE'
R
th(c-s)1
R
th(c-s)2
R
th(c-s)2
M
s
M
t
w
0.043
0.017
0.014
10
K/W
K/W
K/W
nH
mΩ
K/W
K/W
K/W
per diode (λ
grease
=0.81 W/(m*K))
per diode, pre-applied phase change
material
Typical Applications
•Motor Drives
•UPS Systems
•Solar Inverters
Remarks
Recommended T
jop
= -40 ... +150°C
I
DC
≤ 1000A for T
Terminal
= 100°C
measured per switch, T
C
=25°C
calculated without thermal coupling
(λ
grease
=0.81 W/(m*K))
including thermal coupling,
T
s
underneath module
(λ
grease
=0.81 W/(m*K))
including thermal coupling,
T
s
underneath module, pre-applied
phase change material
to heat sink M5
to terminals M8
to terminals M4
0.2
0.0041
0.007
-
4
8
1.8
6
10
2.1
1250
Nm
Nm
Nm
g
Ω
K
Temperature Sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
493 ± 5%
3550
±2%
GB
2Rev. 1.0–26.05.2022© by SEMIKRON
SKM1000GB17E4
Fig. 1: Output characteristics IGBT (typical); I
C
= f (V
CE
);
V
GE
= 15V; (chiplevel)
Fig. 2: Output characteristics IGBT (typical); I
C
= f (V
CE
);
T
j
= 150 °C; (chiplevel)
Fig. 3: Switching losses IGBT (typical); E=f(I
C
)Fig. 4: Switching losses IGBT (typical); E=f(R
G
)
Fig. 5: Transient thermal impedance IGBTFig. 6: RBSOA IGBT
© by SEMIKRONRev. 1.0–26.05.20223
SKM1000GB17E4
Fig. 7: Forward charact. Diode (typical); I
F
=f(V
F
);
(chiplevel)
Fig. 8: Switching losses Diode (typical); E=f(I
F
)
Fig. 9: Switching losses Diode (typical); E=f(R
G
)Fig. 10: Transient thermal impedance Diode
Fig. 11: RBSOA DiodeFig. 12: NTC characteristics (typical)
4Rev. 1.0–26.05.2022© by SEMIKRON
Fig. 13: Typ. transfer characteristicFig. 14: Typ. gate charge characteristic
© by SEMIKRONRev. 1.0–26.05.20225
SEMITRANS 10
GB
6Rev. 1.0–26.05.2022© by SEMIKRON
This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
7
2024年10月24日发(作者：善女)
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
T
j
=25°C
T
j
=175°C
T
c
=25°C
T
c
=100°C
1700
1300
850
1000
2000
V
CC
=1000V
V
GE
≤ 15V
V
CES
≤ 1700 V
-20...20
T
j
=150°C
10
-40...175
1700
T
c
=25°C
T
c
=100°C
1427
890
2000
t
p
=10ms, sin 180°, T
j
=25°C
6240
-40...175
1000
-40...150
AC sinus 50 Hz, t=1min4000
V
A
A
A
A
V
µs
°C
V
A
A
A
A
°C
A
°C
V
ConditionsValuesUnit
SEMITRANS 10
IGBT4 Modules
SKM1000GB17E4
Features*
•
•
•
•
Symmetrical current sharing
Low-inductive module design
High mechanical robustness
UL recognized, file no. E63532
®
V
GES
t
psc
T
j
V
RRM
I
F
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Inverse diode
T
j
=25°C
T
j
=175°C
Typical Applications
•Motor Drives
•UPS Systems
•Solar Inverters
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
R
th(c-s)
R
th(c-s)
Remarks
Recommended T
jop
= -40 ... +150°C
I
DC
≤ 1000A for T
Terminal
= 100°C
Conditions
I
C
=1000A
V
GE
=15V
chiplevel
chiplevel
V
GE
=15V
chiplevel
T
j
=25°C
T
j
=150°C
T
j
=25°C
T
j
=150°C
T
j
=25°C
T
j
=150°C
.
1.99
2.44
1.10
1.00
0.89
1.44
max.
2.31
2.77
1.20
1.10
1.11
1.67
6.4
5
Unit
V
V
V
V
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
V
GE
=V
CE
, I
C
=36mA
V
GE
=0V,V
CE
=1700V, T
j
=25°C
V
CE
=25V
V
GE
=0V
V
GE
=+15V / -15 V
T
j
=25°C
V
CC
=900V
I
C
=1000A
V
GE
=+15/-15V
R
G on
=1.2Ω
R
G off
=1.2Ω
di/dt
on
=8.2kA/µs
di/dt
off
=4.7kA/µs
dv/dt=3800V/µs
L
s
=25nH
per IGBT
T
j
=150°C
T
j
=150°C
T
j
=150°C
T
j
=150°C
T
j
=150°C
T
j
=150°C
f=1MHz
f=1MHz
f=1MHz
5.25.8
70.8
2.58
2.28
7200
1.5
730
115
450
990
175
370
0.034
0.016
0.013
K/W
K/W
K/W
per IGBT (λ
grease
=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
GB
© by SEMIKRONRev. 1.0–26.05.20221
Characteristics
SymbolConditions
T
j
=25°C
T
j
=150°C
T
j
=25°C
T
j
=150°C
T
j
=25°C
T
j
=150°C
T
j
=150°C
T
j
=150°C
T
j
=150°C
.
1.78
1.81
1.32
1.08
0.46
0.73
800
360
200
max.
2.12
2.14
1.56
1.22
0.56
0.92
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
=1000A
V
GE
=0V
chiplevel
V
F0
chiplevel
r
F
chiplevel
I
F
=1000A
di/dt
off
=8.38kA/
µs
V
GE
=-15V
V
CC
=900V
per diode
SEMITRANS
®
10
IGBT4 Modules
SKM1000GB17E4
Features*
•
•
•
•
Symmetrical current sharing
Low-inductive module design
High mechanical robustness
UL recognized, file no. E63532
I
RRM
Q
rr
E
rr
R
th(j-c)
R
th(c-s)
R
th(c-s)
Module
L
CE
R
CC'+EE'
R
th(c-s)1
R
th(c-s)2
R
th(c-s)2
M
s
M
t
w
0.043
0.017
0.014
10
K/W
K/W
K/W
nH
mΩ
K/W
K/W
K/W
per diode (λ
grease
=0.81 W/(m*K))
per diode, pre-applied phase change
material
Typical Applications
•Motor Drives
•UPS Systems
•Solar Inverters
Remarks
Recommended T
jop
= -40 ... +150°C
I
DC
≤ 1000A for T
Terminal
= 100°C
measured per switch, T
C
=25°C
calculated without thermal coupling
(λ
grease
=0.81 W/(m*K))
including thermal coupling,
T
s
underneath module
(λ
grease
=0.81 W/(m*K))
including thermal coupling,
T
s
underneath module, pre-applied
phase change material
to heat sink M5
to terminals M8
to terminals M4
0.2
0.0041
0.007
-
4
8
1.8
6
10
2.1
1250
Nm
Nm
Nm
g
Ω
K
Temperature Sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
493 ± 5%
3550
±2%
GB
2Rev. 1.0–26.05.2022© by SEMIKRON
SKM1000GB17E4
Fig. 1: Output characteristics IGBT (typical); I
C
= f (V
CE
);
V
GE
= 15V; (chiplevel)
Fig. 2: Output characteristics IGBT (typical); I
C
= f (V
CE
);
T
j
= 150 °C; (chiplevel)
Fig. 3: Switching losses IGBT (typical); E=f(I
C
)Fig. 4: Switching losses IGBT (typical); E=f(R
G
)
Fig. 5: Transient thermal impedance IGBTFig. 6: RBSOA IGBT
© by SEMIKRONRev. 1.0–26.05.20223
SKM1000GB17E4
Fig. 7: Forward charact. Diode (typical); I
F
=f(V
F
);
(chiplevel)
Fig. 8: Switching losses Diode (typical); E=f(I
F
)
Fig. 9: Switching losses Diode (typical); E=f(R
G
)Fig. 10: Transient thermal impedance Diode
Fig. 11: RBSOA DiodeFig. 12: NTC characteristics (typical)
4Rev. 1.0–26.05.2022© by SEMIKRON
Fig. 13: Typ. transfer characteristicFig. 14: Typ. gate charge characteristic
© by SEMIKRONRev. 1.0–26.05.20225
SEMITRANS 10
GB
6Rev. 1.0–26.05.2022© by SEMIKRON
This is an electrostatic discharge sensitive device (ESDS) due to international standard IEC 61340.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
7