2024年2月16日发(作者：第夏柳)

LF411LowOffset,LowDriftJFETInputOperationalAmplifierApril1998LF411LowOffset,LowDriftJFETInputOperationalAmplifierGeneralDescriptionThesedevicesarelowcost,highspeed,JFETinputopera-tionalamplifierswitquirelowsuption,wellmatchedhigh411ispincompatiblewiththestandardLM741allowingdesimplifiersmaybeusedinapplicationssuchashighspeedintegrators,fastD/Aconverters,sampleandholdcir-cuitsandmanyothercircuitsrequiringlowinputoffsetvolt-ageanddrift,lowinputbiascurrent,highinputimpedance,esInternallytrimmedoffsetvoltage:0.5mV(max)Inputoffsetvoltagedrift:10µV/˚C(max)Lowinputbiascurrent:50pALowinputnoisecurrent:Widegainbandwidth:3MHz(min)Highslewrate:10V/µs(min)Lowsupplycurrent:1.8mAHighinputimpedance:1012ΩLowtotalharmonicdistortionAV=10,RL=10k,VO=20Vp-p,BW=20Hz−20kHz:<0.02%nLow1/fnoisecorner:50HznFastsettlingtimeto0.01%:2µsnnnnnnnnnTypicalConnectionConnectionDiagramsMetalCanPackageDS005655-5Note:005655-1TopViewOrderNumberLF411ACHorLF411MH/883(Note1)SeeNSPackageNumberH08ADual-In-LinePackageOrderingInformationLF411XYZXindicateselectricalgradeYindicatestemperaturerange“M”formilitary“C”forcommercialZindicatespackagetype“H”or“N”BI-FETII™isatrademarkofNationalSemiconductorCorporation.©

SimplifiedSchematicDS005655-6Note1:AvailableperJM38510/2

AbsoluteMaximumRatings(Note2)IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheNationalSemiconductorSalesOffice/VoltageDifferentialInputVoltageInputVoltageRange(Note3)OutputShortCircuitDurationPowerDissipation(Notes4,11)LF411A±22V±38VLF411±18V±30VTjmaxθjA±19VContinuousHPackage670mW±15VContinuousNPackage670mW(Note6)θeadTemp.(Soldering,10sec.)ESDToleranceHPackage150˚C162˚C/W(StillAir)65˚C/W(400LF/minAirFlow)20˚C/W(Note5)−65˚C≤TA≤150˚C260˚CNPackage115˚C120˚C/W(Note5)−65˚C≤TA≤150˚C260˚tricalCharacteristicsSymbolVOS∆VOS/∆TIOSParameterInputOffsetVoltageAverageTCofInputOffsetVoltageInputOffsetCurrentVS=±15V(Notes6,8)IBInputBiasCurrentVS=±15V(Notes6,8)RINAVOLInputResistanceLargeSignalVoltageGainVOVCMCMRRPSRRISOutputVoltageSwingInputCommon-ModeVoltageRangeCommon-ModeRejectionRatioSupplyVoltageRejectionRatioSupplyCurrent(Note9)RS≤10kConditionsMinRS=10kΩ,TA=25˚CRS=10kΩ(Note7)Tj=25˚CTj=70˚CTj=125˚CTj=25˚CTj=70˚CTj=125˚CTj=25˚CVS=±15V,VO=±10V,RL=2k,TA=25˚COverTemperatureVS=±15V,RL=10kLF411ATyp0.3725Max0.52LF411MinTyp0.8725Max2.020(Note7)1010251512UnitsmVµV/˚CpAnAnApAnAnAΩV/mVV/mVVVVdBdB3.4mA2±12±168080±13.5+19.5−16.51001001.82.8±12±117070±13.5+14.5−11.51001001.8ACElectricalCharacteristicSymbolSRGBWeninSlewRateGain-BandwidthProductEquivalentInputNoiseVoltageEquivalentInputNoiseCurrentParameter(Note6)ConditionsMinLF411ATyp154250.01MaxMin82.7103LF411Typ154250.01MaxV/µsMHzUnitsVS=±15V,TA=25˚CVS=±15V,TA=25˚CTA=25˚C,RS=100Ω,f=1kHzTA=25˚C,f=1kHzNote2:“AbsoluteMaximumRatings”ingRatingsindicateconditionsforwhichthedeviceisfunctional,3:Unlessotherwisespecifiedtheabsolutema

ACElectricalCharacteristic(Note6)(Continued)Note4:Foroperatingatelevatedtemperature,thesedevicesmustbederatedbasedonathermalresistanceofθ5:Thesedevicesareavailableinboththecommercialtemperaturerange0˚C≤TA≤70˚Candthemilitarytemperaturerange−55˚C≤TA≤125˚peraturerangeisdesignatedbythepositionjustbeforethepackagetypeinthedevicenumber.A“C”indicatesthecommercialtemperaturerangeandan“M”itarytemperaturerangeisavailablein“H”6:Unlessotherwisespecified,thespecificationsapplyoverthefulltemperaturerangeandforVS=±20VfortheLF411AandforVS=±,IB,andIOSaremeasuredatVCM=7:TheLF411Ais100%411issampletestedtoinsureatleast90%8:Theinputbiascurrentsarejunctionleakagecurrentswhichapproximatelydoubleforevery10˚Cincreaseinthejunctiontemperature,imitedpro-ductiontesttime,aloperationthejunctiontemperaturerisesabovetheambienttem-peratureasaresultofinternalpowerdissipation,=TA+θjAPDwhereθ9:Supplyvoltagerejectionratioismeasuredforbothsupplymagnitudesincreasingordecreasingsimultaneouslyinaccordancewithcommonpractice,from±15Vto±5VfortheLF411andfrom±20Vto±10:11:lPerformanceCharacteristicsInputBiasCurrentInputBiasCurrentSupplyCurrentDS005655-11DS005655-12DS005655-13PositiveCommon-ModeInputVoltageLimitNegativeCommon-ModeInputVolta4

TypicalPerformanceCharacteristicsNegativeCurrentLimit(Continued)OutputVoltageSwingOutputVoltageSwingDS005655-17DS005655-18DS005655-19GainBandwidthBodePlotSlewRateDS005655-20DS005655-21DS005655-22DistortionvsFrequencyUndistortedOutputVoltageSwin

TypicalPerformanceCharacteristicsCommon-ModeRejectionRatioPowerSupplyRejectionRatio(Continued)EquivalentInputNoiseVoltageDS005655-26DS005655-27DS005655-28OpenLoopVoltageGainOutputImpedanceInverterSettlingTimeDS005655-29DS005655-30DS005655-31PulseResponseRL=2kΩ,CL10pFSmallS6

PulseResponseRL=2kΩ,CL10pF(Continued)LargeSignalNon-InvertingLargeSignalInvertingDS005655-41DS005655-42CurrentLimit(RL=100Ω)DS005655-43ApplicationHintsTheLF411seriesofinternallytrimmedJFETinputopamps(BI-FETII™)providFETshavelargere-versebreakdownvoltagesfroore,largedifferentialinputvolr,neitheroftheinputvoltagesshouldbeallowedtoexceedthenegativesupplyaingthenegativecommon-modelimitoneitherinputwillforcetheoutputtoahighstate,ingthenegativecommhercasedoesalatchoccursinceraisingtheinputbackwithinthecommon-moderangeingthepositivecommon-modelimitonasingleinputwillnotchangethephaseoftheoutput;however,ifbothin-putsexceedthelimit,lifierwilloperatewithacommon-modeinputvoltageequaltothepositivesupply;however,enegativecommon-modevoltageswingstowithin3Vofthenegativesupply,411isbiasedbyazenerreferencewhichallowsnor-malcircuitoperationon±411willdrivea2kΩloadresistanceto±mplifierisforcedtodriveheavierloadcurrents,however,anincreaseininputoffsetvoltagemayoccuronthenegativevoltageswingandtionsshouldbetakentoensurethatthepowersupplyfortheintegratedcircuitneverbecomesreversedinpolarityorthattheunitisnotinadvertentlyinstalledbackwardsinasocketasanunlimitedcurrentsurgethroughtheresultingforwarddiodewithintheICcmostamplifiers,careshouldbetakenwithleaddress,mple,resistorsfromtheoutputtoaninputshouldbeplacedwiththebodyclosetotheinputtominimize“pick-up”andmaximizethefrequencyoallelresistanceandcapacitancefromtheinputofthedevice(usuallytheinvertinginput)instancesthefrequencyofthispoleismuchgreaterthantheexpected3dBfrequencyoftheclosedr,ifthefeedbackpoleislessthanapproximately6timestheex-pected3dBfrequency,

ApplicationHints(Continued)ueoftheaddedcapacitorshouldbesuchthattheRCtimeconstantofthiscapacitorandtheresistanceitparlApplicationsHighSpeedCurrentBoosterDS005655-9PNP=2N2905NPN=8

TypicalApplications(Continued)10-BitLinearDACwithNoVOSAdjustDS005655-32whereAN=1iftheANdigitalinputishighAN=0iftheANdigitalinpu

10

PhysicalDimensionsinches(millimeters)unlessotherwisenotedMetalCanPackage(H)OrderNumberLF411MH/883orLF411ACHNSPackageNumberH08ACeramicDual-In-LinePackage(J)OrderNumberLF411MJ/

LF411LowOffset,LowDriftJFETInputOperationalAmplifierPhysicalDimensionsinches(millimeters)unlessotherwisenoted(Continued)MoldedDual-In-LinePackage(N)OrderNumberLF411ACNorLF411CNNSPackageNumberN08ELIFESUPPORTPOLICYNATIONAL’SPRODUCTSARENOTAUTHORIZEDFORUSEASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSWITHOUTTHEEXPRESSherein:pportdevicesorsystemsaredevicesorsystemswhich,(a)areintendedforsurgicalimplantintothebody,or(b)supportorsustainlife,andwhosefailuretoperformwhenproperlyusedinaccordancewithinstructionsforuseprovidedinthelabeling,alSemiconductorCorporationAmericasTel:1-800-272-9959Fax:1-800-737-7018Email:support@ionalSemiconductorEuropeFax:+49(0)180-5308586Email:t@tschTel:+49(0)180-5308585EnglishTel:+49(0)180-5327832FrançaisTel:+49(0)180-5329358ItalianoTel:+49(0)calcomponentisanycomponentofalifesupportdeviceorsystemwhosefailuretoperformcanbereasonablyexpectedtocausethefailureofthelifesupportdeviceorsystem,alSemiconductorAsiaPacificCustomerResponseGroupTel:65-2544466Fax:65-2504466Email:t@:81-3-5639-7560Fax:81-3-5639-7507Nationaldoesnotassumeanyresponsibilityforuseofanycircuitrydescribed,nocircuitpatentlicensesareimpliedandNationalreservestherightatanytimewithoutnoticetochangesaidcircuitryandspecifications.

2024年2月16日发(作者：第夏柳)

LF411LowOffset,LowDriftJFETInputOperationalAmplifierApril1998LF411LowOffset,LowDriftJFETInputOperationalAmplifierGeneralDescriptionThesedevicesarelowcost,highspeed,JFETinputopera-tionalamplifierswitquirelowsuption,wellmatchedhigh411ispincompatiblewiththestandardLM741allowingdesimplifiersmaybeusedinapplicationssuchashighspeedintegrators,fastD/Aconverters,sampleandholdcir-cuitsandmanyothercircuitsrequiringlowinputoffsetvolt-ageanddrift,lowinputbiascurrent,highinputimpedance,esInternallytrimmedoffsetvoltage:0.5mV(max)Inputoffsetvoltagedrift:10µV/˚C(max)Lowinputbiascurrent:50pALowinputnoisecurrent:Widegainbandwidth:3MHz(min)Highslewrate:10V/µs(min)Lowsupplycurrent:1.8mAHighinputimpedance:1012ΩLowtotalharmonicdistortionAV=10,RL=10k,VO=20Vp-p,BW=20Hz−20kHz:<0.02%nLow1/fnoisecorner:50HznFastsettlingtimeto0.01%:2µsnnnnnnnnnTypicalConnectionConnectionDiagramsMetalCanPackageDS005655-5Note:005655-1TopViewOrderNumberLF411ACHorLF411MH/883(Note1)SeeNSPackageNumberH08ADual-In-LinePackageOrderingInformationLF411XYZXindicateselectricalgradeYindicatestemperaturerange“M”formilitary“C”forcommercialZindicatespackagetype“H”or“N”BI-FETII™isatrademarkofNationalSemiconductorCorporation.©

SimplifiedSchematicDS005655-6Note1:AvailableperJM38510/2

AbsoluteMaximumRatings(Note2)IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheNationalSemiconductorSalesOffice/VoltageDifferentialInputVoltageInputVoltageRange(Note3)OutputShortCircuitDurationPowerDissipation(Notes4,11)LF411A±22V±38VLF411±18V±30VTjmaxθjA±19VContinuousHPackage670mW±15VContinuousNPackage670mW(Note6)θeadTemp.(Soldering,10sec.)ESDToleranceHPackage150˚C162˚C/W(StillAir)65˚C/W(400LF/minAirFlow)20˚C/W(Note5)−65˚C≤TA≤150˚C260˚CNPackage115˚C120˚C/W(Note5)−65˚C≤TA≤150˚C260˚tricalCharacteristicsSymbolVOS∆VOS/∆TIOSParameterInputOffsetVoltageAverageTCofInputOffsetVoltageInputOffsetCurrentVS=±15V(Notes6,8)IBInputBiasCurrentVS=±15V(Notes6,8)RINAVOLInputResistanceLargeSignalVoltageGainVOVCMCMRRPSRRISOutputVoltageSwingInputCommon-ModeVoltageRangeCommon-ModeRejectionRatioSupplyVoltageRejectionRatioSupplyCurrent(Note9)RS≤10kConditionsMinRS=10kΩ,TA=25˚CRS=10kΩ(Note7)Tj=25˚CTj=70˚CTj=125˚CTj=25˚CTj=70˚CTj=125˚CTj=25˚CVS=±15V,VO=±10V,RL=2k,TA=25˚COverTemperatureVS=±15V,RL=10kLF411ATyp0.3725Max0.52LF411MinTyp0.8725Max2.020(Note7)1010251512UnitsmVµV/˚CpAnAnApAnAnAΩV/mVV/mVVVVdBdB3.4mA2±12±168080±13.5+19.5−16.51001001.82.8±12±117070±13.5+14.5−11.51001001.8ACElectricalCharacteristicSymbolSRGBWeninSlewRateGain-BandwidthProductEquivalentInputNoiseVoltageEquivalentInputNoiseCurrentParameter(Note6)ConditionsMinLF411ATyp154250.01MaxMin82.7103LF411Typ154250.01MaxV/µsMHzUnitsVS=±15V,TA=25˚CVS=±15V,TA=25˚CTA=25˚C,RS=100Ω,f=1kHzTA=25˚C,f=1kHzNote2:“AbsoluteMaximumRatings”ingRatingsindicateconditionsforwhichthedeviceisfunctional,3:Unlessotherwisespecifiedtheabsolutema

ACElectricalCharacteristic(Note6)(Continued)Note4:Foroperatingatelevatedtemperature,thesedevicesmustbederatedbasedonathermalresistanceofθ5:Thesedevicesareavailableinboththecommercialtemperaturerange0˚C≤TA≤70˚Candthemilitarytemperaturerange−55˚C≤TA≤125˚peraturerangeisdesignatedbythepositionjustbeforethepackagetypeinthedevicenumber.A“C”indicatesthecommercialtemperaturerangeandan“M”itarytemperaturerangeisavailablein“H”6:Unlessotherwisespecified,thespecificationsapplyoverthefulltemperaturerangeandforVS=±20VfortheLF411AandforVS=±,IB,andIOSaremeasuredatVCM=7:TheLF411Ais100%411issampletestedtoinsureatleast90%8:Theinputbiascurrentsarejunctionleakagecurrentswhichapproximatelydoubleforevery10˚Cincreaseinthejunctiontemperature,imitedpro-ductiontesttime,aloperationthejunctiontemperaturerisesabovetheambienttem-peratureasaresultofinternalpowerdissipation,=TA+θjAPDwhereθ9:Supplyvoltagerejectionratioismeasuredforbothsupplymagnitudesincreasingordecreasingsimultaneouslyinaccordancewithcommonpractice,from±15Vto±5VfortheLF411andfrom±20Vto±10:11:lPerformanceCharacteristicsInputBiasCurrentInputBiasCurrentSupplyCurrentDS005655-11DS005655-12DS005655-13PositiveCommon-ModeInputVoltageLimitNegativeCommon-ModeInputVolta4

TypicalPerformanceCharacteristicsNegativeCurrentLimit(Continued)OutputVoltageSwingOutputVoltageSwingDS005655-17DS005655-18DS005655-19GainBandwidthBodePlotSlewRateDS005655-20DS005655-21DS005655-22DistortionvsFrequencyUndistortedOutputVoltageSwin

TypicalPerformanceCharacteristicsCommon-ModeRejectionRatioPowerSupplyRejectionRatio(Continued)EquivalentInputNoiseVoltageDS005655-26DS005655-27DS005655-28OpenLoopVoltageGainOutputImpedanceInverterSettlingTimeDS005655-29DS005655-30DS005655-31PulseResponseRL=2kΩ,CL10pFSmallS6

PulseResponseRL=2kΩ,CL10pF(Continued)LargeSignalNon-InvertingLargeSignalInvertingDS005655-41DS005655-42CurrentLimit(RL=100Ω)DS005655-43ApplicationHintsTheLF411seriesofinternallytrimmedJFETinputopamps(BI-FETII™)providFETshavelargere-versebreakdownvoltagesfroore,largedifferentialinputvolr,neitheroftheinputvoltagesshouldbeallowedtoexceedthenegativesupplyaingthenegativecommon-modelimitoneitherinputwillforcetheoutputtoahighstate,ingthenegativecommhercasedoesalatchoccursinceraisingtheinputbackwithinthecommon-moderangeingthepositivecommon-modelimitonasingleinputwillnotchangethephaseoftheoutput;however,ifbothin-putsexceedthelimit,lifierwilloperatewithacommon-modeinputvoltageequaltothepositivesupply;however,enegativecommon-modevoltageswingstowithin3Vofthenegativesupply,411isbiasedbyazenerreferencewhichallowsnor-malcircuitoperationon±411willdrivea2kΩloadresistanceto±mplifierisforcedtodriveheavierloadcurrents,however,anincreaseininputoffsetvoltagemayoccuronthenegativevoltageswingandtionsshouldbetakentoensurethatthepowersupplyfortheintegratedcircuitneverbecomesreversedinpolarityorthattheunitisnotinadvertentlyinstalledbackwardsinasocketasanunlimitedcurrentsurgethroughtheresultingforwarddiodewithintheICcmostamplifiers,careshouldbetakenwithleaddress,mple,resistorsfromtheoutputtoaninputshouldbeplacedwiththebodyclosetotheinputtominimize“pick-up”andmaximizethefrequencyoallelresistanceandcapacitancefromtheinputofthedevice(usuallytheinvertinginput)instancesthefrequencyofthispoleismuchgreaterthantheexpected3dBfrequencyoftheclosedr,ifthefeedbackpoleislessthanapproximately6timestheex-pected3dBfrequency,

ApplicationHints(Continued)ueoftheaddedcapacitorshouldbesuchthattheRCtimeconstantofthiscapacitorandtheresistanceitparlApplicationsHighSpeedCurrentBoosterDS005655-9PNP=2N2905NPN=8

TypicalApplications(Continued)10-BitLinearDACwithNoVOSAdjustDS005655-32whereAN=1iftheANdigitalinputishighAN=0iftheANdigitalinpu

10

PhysicalDimensionsinches(millimeters)unlessotherwisenotedMetalCanPackage(H)OrderNumberLF411MH/883orLF411ACHNSPackageNumberH08ACeramicDual-In-LinePackage(J)OrderNumberLF411MJ/

LF411LowOffset,LowDriftJFETInputOperationalAmplifierPhysicalDimensionsinches(millimeters)unlessotherwisenoted(Continued)MoldedDual-In-LinePackage(N)OrderNumberLF411ACNorLF411CNNSPackageNumberN08ELIFESUPPORTPOLICYNATIONAL’SPRODUCTSARENOTAUTHORIZEDFORUSEASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSWITHOUTTHEEXPRESSherein:pportdevicesorsystemsaredevicesorsystemswhich,(a)areintendedforsurgicalimplantintothebody,or(b)supportorsustainlife,andwhosefailuretoperformwhenproperlyusedinaccordancewithinstructionsforuseprovidedinthelabeling,alSemiconductorCorporationAmericasTel:1-800-272-9959Fax:1-800-737-7018Email:support@ionalSemiconductorEuropeFax:+49(0)180-5308586Email:t@tschTel:+49(0)180-5308585EnglishTel:+49(0)180-5327832FrançaisTel:+49(0)180-5329358ItalianoTel:+49(0)calcomponentisanycomponentofalifesupportdeviceorsystemwhosefailuretoperformcanbereasonablyexpectedtocausethefailureofthelifesupportdeviceorsystem,alSemiconductorAsiaPacificCustomerResponseGroupTel:65-2544466Fax:65-2504466Email:t@:81-3-5639-7560Fax:81-3-5639-7507Nationaldoesnotassumeanyresponsibilityforuseofanycircuitrydescribed,nocircuitpatentlicensesareimpliedandNationalreservestherightatanytimewithoutnoticetochangesaidcircuitryandspecifications.