2024年2月23日发(作者:令又琴)
DATA SHEETPDZ-B seriesVoltage regulator diodesProduct data sheet
Supersedes data of 2002 Feb 18
2004 Mar 22/
NXP SemiconductorsProduct data sheetVoltage regulator diodesFEATURES•Total power dissipation: max. 400 mW•Small plastic package suitable for surface mounted
design•Wide variety of voltage ranges: nominal 2.4 to 36 V
(E24 range)•Tolerance approximately ±2%.APPLICATIONS•General voltage PTIONLow-power general purpose voltage regulator diodes in a
small plastic SMD SOD323 (SC-76) GTYPE
NUMBERPDZ2.4BPDZ2.7BPDZ3.0BPDZ3.3BPDZ3.6BPDZ3.9BPDZ4.3BPDZ4.7BMARKING
CODEZ0Z1Z2Z3Z4Z5Z6Z7TYPE
NUMBERPDZ5.1BPDZ5.6BPDZ6.2BPDZ6.8BPDZ7.5BPDZ8.2BPDZ9.1BPDZ10BMARKING
CODEZ8Z9ZAZBZCZDZEZFTYPE
NUMBERPDZ11BPDZ12BPDZ13BPDZ15BPDZ16BPDZ18BPDZ20BPDZ22BMARKING
CODEZGZHZJZKZLZMZNZPhandbook, halfpagePDZ-B seriesPINNINGPIN12DESCRIPTIONcathodeanode12Top viewThe marking bar indicates the 387Fig.1Simplified outline (SOD323; SC-76) and
NUMBERPDZ24BPDZ27BPDZ30BPDZ33BPDZ36BMARKING
CODEZQZRZSZTZUORDERING INFORMATIONTYPE
NUMBERPDZ2.4B to
PDZ36BPACKAGENAME−DESCRIPTIONplastic surface mounted package; 2 leadsVERSIONSOD3232004 Mar 222
/
NXP SemiconductorsProduct data sheetVoltage regulator diodesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134). mounted on a printed-circuit board measuring 11 × 25 × 1.6 L CHARACTERISTICSSYMBOLRth(j-s)Rth(j-a) mounted on a printed-circuit board measuring 11 × 25 × 1.6 TERthermal resistance from junction to soldering pointthermal resistance from junction to ambientnote 1CONDITIONSPARAMETERcontinuous forward currentnon-repetitive peak reverse currenttotal power dissipationstorage temperaturejunction temperaturetp = 100 μs; square wave;
Tamb = 25 °C prior to surgeTamb = 25 °C; note 1;
see Fig.2−−65−CONDITIONS−-B seriesMAX.200see Table 2400+150150UNITmAmW°C°CVALUE130340UNITK/WK/W2004 Mar 223
/
NXP SemiconductorsProduct data sheetVoltage regulator diodesCHARACTERISTICSTable 1Total seriesTj = 25 °C unless otherwise VFIRPARAMETERforward voltagereverse currentPDZ2.4BPDZ2.7BPDZ3.0BPDZ3.3BPDZ3.6BPDZ3.9BPDZ4.3BPDZ4.7BPDZ5.1BPDZ5.6BPDZ6.2BPDZ6.8BPDZ7.5BPDZ8.2BPDZ9.1BPDZ10BPDZ11BPDZ12BPDZ13BPDZ15BPDZ16BPDZ18BPDZ20BPDZ22BPDZ24BPDZ27BPDZ30BPDZ33BPDZ36BCONDITIONSIF = 10 mA; see Fig.3IF = 100 mA; see Fig.3VR = 1 VVR = 1 VVR = 1 VVR = 1 VVR = 1 VVR = 1 VVR = 1 VVR = 1 VVR = 1.5 VVR = 2.5 VVR = 3 VVR = 3.5 VVR = 4 VVR = 5 VVR = 6 VVR = 7 VVR = 8 VVR = 9 VVR = 10 VVR = 11 VVR = 12 VVR = 13 VVR = 15 VVR = 17 VVR = 19 VVR = 21 VVR = 23 VVR = 25 VVR = 27 VPDZ-B seriesMAX.0.91.50UNITVVμAμAμAμAμAμAμAμAμAμAnAnAnAnAnAnAnAnAnAnAnAnAnAnAnAnAnAnAnA2004 Mar 224
/
2004 Mar 22Table 2Per typeTj = 25 °C unless otherwise G VOLTAGE
TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK
VZ (V)DIFFERENTIAL RESISTANCESZ (mV/K) Cd (pF) at REVERSE CURRENT
TYPE
at IZ = 5 mArdif (Ω)at IZ = 5 mA f = 1 MHz; IZSM (A) at tp = 100 μs;
NUMBER(see Figs 4 and 5)VR = 0Tamb = 25 ° IZ at IZ
(mA)MAX.(mA)2.4B2.432.631 0000.51005−1.64508.0PDZ2.7B2.692.911 0000.51005−2.04408.0PDZ3.0B2.853.071 0000.5955−2.14258.0PDZ3.3B3.323.531 0000.5955−2.44108.0PDZ3.6B3.603.855001.0905−2.43908.0PDZ3.9B3.894.165001.0905−2.53708.0PDZ4.3B4.174.486001.0905−2.53508.0PDZ4.7B4.554.756001.0905−1.43258.0PDZ5.1B4.965.202500.56050.33005.5PDZ5.6B5.485.731000.55051.92755.55PDZ6.2B6.066.33800.55052.72505.5PDZ6.8B6.656.93600.54053.42155.5PDZ7.5B7.287.60600.51054.01703.5PDZ8.2B8.028.36600.51054.61503.5PDZ9.1B8.859.23600.51055.51203.5PDZ10B9.7710.21600.51056.41103.5PDZ11B10.7811.22600.51057.41083.0PDZ12B11.7412.24800.51058.41053.0PDZ13B12.9113.49800.51059.41032.5PDZ15B14.3414.98800.515511.4992.0PDZ16B15.8516.51800.520512.4971.5PDZ18B17.5618.35800.520514.4931.5PDZ20B19.5220.391000.520516.4881.5PDZ22B21.5422.471000.525518.4841.3PDZ24B23.7224.781200.530520.4801.3PDZ27B26.1927.531500.540523.4731.0PDZ30B29.1930.692000.540526.6661.0PDZ33B32.1533.792500.540529.7600.9PDZ36B35.0736.873000.560533.0590.8
Voltage regulator diodesNXP SemiconductorsPDZ-B seriesProduct data sheet/
NXP SemiconductorsProduct data sheetVoltage regulator diodesGRAPHICAL DATAPDZ-B serieshandbook, halfpage500MBK245Ptot(mW)handbook, halfpage300MBG781400IF(mA)2200Tamb (°C)00.60.8VF (V)1Tj
= 25 °.3Fig.2 Power derating d current as a function of forward
voltage; typical ok, halfpage0MGL273handbook, halfpage10MGL27412SZ(mV/K)−14.3SZ(mV/K)511109.18.27.56.83.93.66.25.65.14.7−23.33.02.42.70−302040IZ (mA)60−50481216IZ (mA)20PDZ2.4B to
= 25 °C to 150 °4.7B to
= 25 °C to 150 °.4Temperature coefficient as a function of
working current; typical .5Temperature coefficient as a function of
working current; typical values.2004 Mar 226
/
NXP SemiconductorsProduct data sheetVoltage regulator diodesPACKAGE OUTLINEPlastic surface-mounted package; 2 leadsPDZ-B seriesSOD323DAEXHDvMAQ12bpAA1(1)cLpdetail X01scale2 mmDIMENSIONS (mm are the original dimensions)UNITmmA1.10.8A1max0.05bp0.400.25c0.250.10D1.81.6E1.351.15HD2.72.3Lp0.450.15Q0.250.15v0.2Note1. The marking bar indicates the cathodeOUTLINEVERSIONSOD323REFERENCESIECJEDECJEITASC-76EUROPEANPROJECTIONISSUE DATE03-12-1706-03-162004 Mar 227
/
NXP SemiconductorsProduct data sheetVoltage regulator diodesDATA SHEET STATUSDOCUMENTSTATUS(1)Objective data sheetPreliminary data sheetProduct data consult the most recently issued document before initiating or completing a T
STATUS(2)DevelopmentQualificationProductionDEFINITIONPDZ-B seriesThis document contains data from the objective specification for product
development.
This document contains data from the preliminary specification.
This document contains the product specification.
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL .
DISCLAIMERSGeneral ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication ility for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own ations ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or ng values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Mar 228
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
/
NXP SemiconductorsCustomer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact informationFor additional information please visit:
For sales offices addresses send e-mail to: salesaddresses@
© NXP B.V. 2009All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property d in The Netherlands R76/05/pp9 Date of release: 2004 Mar 22 Document order number: 9397 750 12615/
分销商库存信息:NXPPDZ5.6B,115PDZ10B,115PDZ2.4B,115PDZ4.3B,115PDZ16B,115PDZ15B,115PDZ5.1B,115PDZ3.6B,115PDZ13B,135PDZ22B,135PDZ22B,115PDZ9.1B,115PDZ4.7B,115PDZ18B,115PDZ3.9B,115PDZ4.3B,135PDZ16B,135PDZ12B,115PDZ7.5B,115PDZ8.2B,115PDZ15B,135PDZ13B,115PDZ3.0B,115PDZ11B,115PDZ4.7B,135PDZ6.8B,115PDZ6.2B,115PDZ36B,115PDZ2.7B,115PDZ3.3B,115PDZ24B,115PDZ27B,115PDZ2.7B,135PDZ20B,115PDZ30B,115PDZ33B,115
2024年2月23日发(作者:令又琴)
DATA SHEETPDZ-B seriesVoltage regulator diodesProduct data sheet
Supersedes data of 2002 Feb 18
2004 Mar 22/
NXP SemiconductorsProduct data sheetVoltage regulator diodesFEATURES•Total power dissipation: max. 400 mW•Small plastic package suitable for surface mounted
design•Wide variety of voltage ranges: nominal 2.4 to 36 V
(E24 range)•Tolerance approximately ±2%.APPLICATIONS•General voltage PTIONLow-power general purpose voltage regulator diodes in a
small plastic SMD SOD323 (SC-76) GTYPE
NUMBERPDZ2.4BPDZ2.7BPDZ3.0BPDZ3.3BPDZ3.6BPDZ3.9BPDZ4.3BPDZ4.7BMARKING
CODEZ0Z1Z2Z3Z4Z5Z6Z7TYPE
NUMBERPDZ5.1BPDZ5.6BPDZ6.2BPDZ6.8BPDZ7.5BPDZ8.2BPDZ9.1BPDZ10BMARKING
CODEZ8Z9ZAZBZCZDZEZFTYPE
NUMBERPDZ11BPDZ12BPDZ13BPDZ15BPDZ16BPDZ18BPDZ20BPDZ22BMARKING
CODEZGZHZJZKZLZMZNZPhandbook, halfpagePDZ-B seriesPINNINGPIN12DESCRIPTIONcathodeanode12Top viewThe marking bar indicates the 387Fig.1Simplified outline (SOD323; SC-76) and
NUMBERPDZ24BPDZ27BPDZ30BPDZ33BPDZ36BMARKING
CODEZQZRZSZTZUORDERING INFORMATIONTYPE
NUMBERPDZ2.4B to
PDZ36BPACKAGENAME−DESCRIPTIONplastic surface mounted package; 2 leadsVERSIONSOD3232004 Mar 222
/
NXP SemiconductorsProduct data sheetVoltage regulator diodesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134). mounted on a printed-circuit board measuring 11 × 25 × 1.6 L CHARACTERISTICSSYMBOLRth(j-s)Rth(j-a) mounted on a printed-circuit board measuring 11 × 25 × 1.6 TERthermal resistance from junction to soldering pointthermal resistance from junction to ambientnote 1CONDITIONSPARAMETERcontinuous forward currentnon-repetitive peak reverse currenttotal power dissipationstorage temperaturejunction temperaturetp = 100 μs; square wave;
Tamb = 25 °C prior to surgeTamb = 25 °C; note 1;
see Fig.2−−65−CONDITIONS−-B seriesMAX.200see Table 2400+150150UNITmAmW°C°CVALUE130340UNITK/WK/W2004 Mar 223
/
NXP SemiconductorsProduct data sheetVoltage regulator diodesCHARACTERISTICSTable 1Total seriesTj = 25 °C unless otherwise VFIRPARAMETERforward voltagereverse currentPDZ2.4BPDZ2.7BPDZ3.0BPDZ3.3BPDZ3.6BPDZ3.9BPDZ4.3BPDZ4.7BPDZ5.1BPDZ5.6BPDZ6.2BPDZ6.8BPDZ7.5BPDZ8.2BPDZ9.1BPDZ10BPDZ11BPDZ12BPDZ13BPDZ15BPDZ16BPDZ18BPDZ20BPDZ22BPDZ24BPDZ27BPDZ30BPDZ33BPDZ36BCONDITIONSIF = 10 mA; see Fig.3IF = 100 mA; see Fig.3VR = 1 VVR = 1 VVR = 1 VVR = 1 VVR = 1 VVR = 1 VVR = 1 VVR = 1 VVR = 1.5 VVR = 2.5 VVR = 3 VVR = 3.5 VVR = 4 VVR = 5 VVR = 6 VVR = 7 VVR = 8 VVR = 9 VVR = 10 VVR = 11 VVR = 12 VVR = 13 VVR = 15 VVR = 17 VVR = 19 VVR = 21 VVR = 23 VVR = 25 VVR = 27 VPDZ-B seriesMAX.0.91.50UNITVVμAμAμAμAμAμAμAμAμAμAnAnAnAnAnAnAnAnAnAnAnAnAnAnAnAnAnAnAnA2004 Mar 224
/
2004 Mar 22Table 2Per typeTj = 25 °C unless otherwise G VOLTAGE
TEMP. COEFF. DIODE CAP. NON-REPETITIVE PEAK
VZ (V)DIFFERENTIAL RESISTANCESZ (mV/K) Cd (pF) at REVERSE CURRENT
TYPE
at IZ = 5 mArdif (Ω)at IZ = 5 mA f = 1 MHz; IZSM (A) at tp = 100 μs;
NUMBER(see Figs 4 and 5)VR = 0Tamb = 25 ° IZ at IZ
(mA)MAX.(mA)2.4B2.432.631 0000.51005−1.64508.0PDZ2.7B2.692.911 0000.51005−2.04408.0PDZ3.0B2.853.071 0000.5955−2.14258.0PDZ3.3B3.323.531 0000.5955−2.44108.0PDZ3.6B3.603.855001.0905−2.43908.0PDZ3.9B3.894.165001.0905−2.53708.0PDZ4.3B4.174.486001.0905−2.53508.0PDZ4.7B4.554.756001.0905−1.43258.0PDZ5.1B4.965.202500.56050.33005.5PDZ5.6B5.485.731000.55051.92755.55PDZ6.2B6.066.33800.55052.72505.5PDZ6.8B6.656.93600.54053.42155.5PDZ7.5B7.287.60600.51054.01703.5PDZ8.2B8.028.36600.51054.61503.5PDZ9.1B8.859.23600.51055.51203.5PDZ10B9.7710.21600.51056.41103.5PDZ11B10.7811.22600.51057.41083.0PDZ12B11.7412.24800.51058.41053.0PDZ13B12.9113.49800.51059.41032.5PDZ15B14.3414.98800.515511.4992.0PDZ16B15.8516.51800.520512.4971.5PDZ18B17.5618.35800.520514.4931.5PDZ20B19.5220.391000.520516.4881.5PDZ22B21.5422.471000.525518.4841.3PDZ24B23.7224.781200.530520.4801.3PDZ27B26.1927.531500.540523.4731.0PDZ30B29.1930.692000.540526.6661.0PDZ33B32.1533.792500.540529.7600.9PDZ36B35.0736.873000.560533.0590.8
Voltage regulator diodesNXP SemiconductorsPDZ-B seriesProduct data sheet/
NXP SemiconductorsProduct data sheetVoltage regulator diodesGRAPHICAL DATAPDZ-B serieshandbook, halfpage500MBK245Ptot(mW)handbook, halfpage300MBG781400IF(mA)2200Tamb (°C)00.60.8VF (V)1Tj
= 25 °.3Fig.2 Power derating d current as a function of forward
voltage; typical ok, halfpage0MGL273handbook, halfpage10MGL27412SZ(mV/K)−14.3SZ(mV/K)511109.18.27.56.83.93.66.25.65.14.7−23.33.02.42.70−302040IZ (mA)60−50481216IZ (mA)20PDZ2.4B to
= 25 °C to 150 °4.7B to
= 25 °C to 150 °.4Temperature coefficient as a function of
working current; typical .5Temperature coefficient as a function of
working current; typical values.2004 Mar 226
/
NXP SemiconductorsProduct data sheetVoltage regulator diodesPACKAGE OUTLINEPlastic surface-mounted package; 2 leadsPDZ-B seriesSOD323DAEXHDvMAQ12bpAA1(1)cLpdetail X01scale2 mmDIMENSIONS (mm are the original dimensions)UNITmmA1.10.8A1max0.05bp0.400.25c0.250.10D1.81.6E1.351.15HD2.72.3Lp0.450.15Q0.250.15v0.2Note1. The marking bar indicates the cathodeOUTLINEVERSIONSOD323REFERENCESIECJEDECJEITASC-76EUROPEANPROJECTIONISSUE DATE03-12-1706-03-162004 Mar 227
/
NXP SemiconductorsProduct data sheetVoltage regulator diodesDATA SHEET STATUSDOCUMENTSTATUS(1)Objective data sheetPreliminary data sheetProduct data consult the most recently issued document before initiating or completing a T
STATUS(2)DevelopmentQualificationProductionDEFINITIONPDZ-B seriesThis document contains data from the objective specification for product
development.
This document contains data from the preliminary specification.
This document contains the product specification.
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL .
DISCLAIMERSGeneral ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication ility for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own ations ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or ng values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Mar 228
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
/
NXP SemiconductorsCustomer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact informationFor additional information please visit:
For sales offices addresses send e-mail to: salesaddresses@
© NXP B.V. 2009All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property d in The Netherlands R76/05/pp9 Date of release: 2004 Mar 22 Document order number: 9397 750 12615/
分销商库存信息:NXPPDZ5.6B,115PDZ10B,115PDZ2.4B,115PDZ4.3B,115PDZ16B,115PDZ15B,115PDZ5.1B,115PDZ3.6B,115PDZ13B,135PDZ22B,135PDZ22B,115PDZ9.1B,115PDZ4.7B,115PDZ18B,115PDZ3.9B,115PDZ4.3B,135PDZ16B,135PDZ12B,115PDZ7.5B,115PDZ8.2B,115PDZ15B,135PDZ13B,115PDZ3.0B,115PDZ11B,115PDZ4.7B,135PDZ6.8B,115PDZ6.2B,115PDZ36B,115PDZ2.7B,115PDZ3.3B,115PDZ24B,115PDZ27B,115PDZ2.7B,135PDZ20B,115PDZ30B,115PDZ33B,115